JP4651848B2 - 半導体装置およびその製造方法並びにｃｍｏｓトランジスタ - Google Patents

半導体装置およびその製造方法並びにｃｍｏｓトランジスタ Download PDF

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Publication number
JP4651848B2
JP4651848B2 JP2001122998A JP2001122998A JP4651848B2 JP 4651848 B2 JP4651848 B2 JP 4651848B2 JP 2001122998 A JP2001122998 A JP 2001122998A JP 2001122998 A JP2001122998 A JP 2001122998A JP 4651848 B2 JP4651848 B2 JP 4651848B2
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Prior art keywords
film
semiconductor device
metal
conductive silicon
silicide
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Expired - Fee Related
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JP2001122998A
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English (en)
Japanese (ja)
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JP2002100760A (ja
JP2002100760A5 (enExample
Inventor
清志 林
靖朗 井上
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2001122998A priority Critical patent/JP4651848B2/ja
Priority to TW090117416A priority patent/TWI237851B/zh
Priority to US09/908,618 priority patent/US6774442B2/en
Priority to KR10-2001-0043683A priority patent/KR100433437B1/ko
Priority to DE10135557A priority patent/DE10135557A1/de
Publication of JP2002100760A publication Critical patent/JP2002100760A/ja
Publication of JP2002100760A5 publication Critical patent/JP2002100760A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/664—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0174—Manufacturing their gate conductors the gate conductors being silicided
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001122998A 2000-07-21 2001-04-20 半導体装置およびその製造方法並びにｃｍｏｓトランジスタ Expired - Fee Related JP4651848B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001122998A JP4651848B2 (ja) 2000-07-21 2001-04-20 半導体装置およびその製造方法並びにｃｍｏｓトランジスタ
TW090117416A TWI237851B (en) 2000-07-21 2001-07-17 Semiconductor device, manufacturing method thereof, and CMOS transistor
US09/908,618 US6774442B2 (en) 2000-07-21 2001-07-20 Semiconductor device and CMOS transistor
KR10-2001-0043683A KR100433437B1 (ko) 2000-07-21 2001-07-20 반도체 장치 및 그 제조 방법 및 ｃｍｏｓ 트랜지스터
DE10135557A DE10135557A1 (de) 2000-07-21 2001-07-20 Halbleiter-Vorrichtung, Verfahren zur Herstellung derselben und CMOS-Transistor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000220770 2000-07-21
JP2000-220770 2000-07-21
JP2001122998A JP4651848B2 (ja) 2000-07-21 2001-04-20 半導体装置およびその製造方法並びにｃｍｏｓトランジスタ

Publications (3)

Publication Number Publication Date
JP2002100760A JP2002100760A (ja) 2002-04-05
JP2002100760A5 JP2002100760A5 (enExample) 2008-05-22
JP4651848B2 true JP4651848B2 (ja) 2011-03-16

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JP (1) JP4651848B2 (enExample)
KR (1) KR100433437B1 (enExample)
DE (1) DE10135557A1 (enExample)
TW (1) TWI237851B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9530782B2 (en) 2014-03-12 2016-12-27 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device comprising memory gate and peripheral gate having different thicknesses

Families Citing this family (18)

* Cited by examiner, † Cited by third party
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JP3781666B2 (ja) 2001-11-29 2006-05-31 エルピーダメモリ株式会社 ゲート電極の形成方法及びゲート電極構造
KR100806138B1 (ko) * 2002-06-29 2008-02-22 주식회사 하이닉스반도체 금속 게이트전극을 구비한 반도체소자의 제조 방법
US7112485B2 (en) * 2002-08-28 2006-09-26 Micron Technology, Inc. Systems and methods for forming zirconium and/or hafnium-containing layers
US7534709B2 (en) 2003-05-29 2009-05-19 Samsung Electronics Co., Ltd. Semiconductor device and method of manufacturing the same
KR100693878B1 (ko) * 2004-12-08 2007-03-12 삼성전자주식회사 낮은 저항을 갖는 반도체 장치 및 그 제조 방법
DE102004004864B4 (de) * 2004-01-30 2008-09-11 Qimonda Ag Verfahren zur Herstellung einer Gate-Struktur und Gate-Struktur für einen Transistor
KR100618895B1 (ko) * 2005-04-27 2006-09-01 삼성전자주식회사 폴리메탈 게이트 전극을 가지는 반도체 소자 및 그 제조방법
JP4690120B2 (ja) * 2005-06-21 2011-06-01 エルピーダメモリ株式会社 半導体装置及びその製造方法
KR100683488B1 (ko) 2005-06-30 2007-02-15 주식회사 하이닉스반도체 폴리메탈 게이트전극 및 그의 제조 방법
KR100673902B1 (ko) * 2005-06-30 2007-01-25 주식회사 하이닉스반도체 텅스텐폴리메탈게이트 및 그의 제조 방법
KR100654358B1 (ko) 2005-08-10 2006-12-08 삼성전자주식회사 반도체 집적 회로 장치와 그 제조 방법
US7781333B2 (en) * 2006-12-27 2010-08-24 Hynix Semiconductor Inc. Semiconductor device with gate structure and method for fabricating the semiconductor device
DE102007045074B4 (de) 2006-12-27 2009-06-18 Hynix Semiconductor Inc., Ichon Halbleiterbauelement mit Gatestapelstruktur
KR100844940B1 (ko) * 2006-12-27 2008-07-09 주식회사 하이닉스반도체 다중 확산방지막을 구비한 반도체소자 및 그의 제조 방법
KR100914283B1 (ko) 2006-12-28 2009-08-27 주식회사 하이닉스반도체 반도체소자의 폴리메탈게이트 형성방법
KR100843230B1 (ko) 2007-01-17 2008-07-02 삼성전자주식회사 금속층을 가지는 게이트 전극을 구비한 반도체 소자 및 그제조 방법
KR100824132B1 (ko) 2007-04-24 2008-04-21 주식회사 하이닉스반도체 반도체 소자의 제조 방법
KR100972220B1 (ko) * 2008-01-23 2010-07-23 이동훈 전기자극치료기용 도자컵 패드

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JPH0687501B2 (ja) * 1988-09-29 1994-11-02 シャープ株式会社 半導体装置のゲート電極の製造方法
JP3183793B2 (ja) * 1994-01-18 2001-07-09 松下電器産業株式会社 半導体装置及びその製造方法
JPH0964200A (ja) * 1995-08-26 1997-03-07 Ricoh Co Ltd 半導体装置およびその製造方法
KR100240880B1 (ko) * 1997-08-16 2000-01-15 윤종용 반도체 장치의 게이트 전극 형성 방법
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JP2000036593A (ja) * 1998-07-17 2000-02-02 Fujitsu Ltd 半導体装置
WO2000011722A1 (en) * 1998-08-21 2000-03-02 Micron Technology, Inc. Field effect transistors, integrated circuitry, methods of forming field effect transistor gates, and methods of forming integrated circuitry
JP3264324B2 (ja) * 1998-08-26 2002-03-11 日本電気株式会社 半導体装置の製造方法および半導体装置
JP2001298186A (ja) * 2000-04-14 2001-10-26 Hitachi Ltd 半導体装置およびその製造方法
KR100351907B1 (ko) * 2000-11-17 2002-09-12 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9530782B2 (en) 2014-03-12 2016-12-27 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device comprising memory gate and peripheral gate having different thicknesses

Also Published As

Publication number Publication date
DE10135557A1 (de) 2002-02-07
JP2002100760A (ja) 2002-04-05
TWI237851B (en) 2005-08-11
KR100433437B1 (ko) 2004-05-31
KR20020008771A (ko) 2002-01-31

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