JP4642909B2 - エレクトロウェッティング方式の技術を用いて小滴を操作するための方法および装置 - Google Patents
エレクトロウェッティング方式の技術を用いて小滴を操作するための方法および装置 Download PDFInfo
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Description
本発明は、2002年9月24日付けで出願された米国特許出願第10/253,368号の優先権を主張し、その開示内容はここに一体のものとして統合される。
本発明は、米国国防総省高等研究事業局により承認された承認番号F30602−98−2−0140号に基づき、米国政府からの支援を受けてなされたものである。米国政府は、本発明に関する所定の権利を有する。
本発明は、一般に、マイクロ流体スケールの小滴サンプルを作成、混合、希釈するなど、小滴の液体を操作および処理する技術分野に関する。とりわけ本発明は、エレクトロウェッティング方式の技術を用いた小滴の操作に関する。
1.小滴の位置に関する改善された制御
2.高密度電極アレイを用いた高い並行処理機能
3.再構築性
4.プログラム動作を用いた混合比制御、混合比のより良好な制御性、混合比の精度改善
5.高い生産性、改善された並行性
6.非同期制御性および精度のさらなる改善を可能にする光学的検出部品との集積
ここで図1を参照すると、エレクトロウェッティング・マイクロアクチュエータ機構が、ポンプ、バルブ、または固定されたチャンネルを必要とすることなく、小滴Dに対してエレクトロウェッティング方式に操作する好適な実施形態として、一般に符号10で図示されている。小滴Dは、電解質か、分極可能か、あるいは電流を流すか、帯電させることができる。小滴Dは、一般に符号12で示す上側プレーンと、一般に符号14で示す下側プレーンとの間で挟持されている。本明細書においては、これら2つのプレーン12,14を区別するために、「上側(upper)」および「下側(lower)」なる用語が用いられるが、水平方向におけるプレーン12,14の向きを限定するものではない。下側プレーン12は、独立してアドレス可能な一連の制御電極を有する。一例として、3つからなる直線的な一連の制御電極または駆動電極E(特にE1,E2,E3)が図1に図示されている。ただし、制御電極E1,E2,E3は、円などの直線的でない経路に沿って配置することもできると理解される。さらに、本発明の利点を享受するデバイス構成(例えば、マイクロ流体チップ)において、制御電極E1,E2,E3は、全体として2次元電極アレイまたはグリッドを構成するより多数の制御電極の一部である。図1は、一般にC(特にC1,C2,C3)と称するユニットセルを概念化するために、隣接する制御電極E1,E2,E3の間に破線を有する。好適には、各ユニットセルC1,C2,C3は、単一の制御電極E1,E2,E3を含む。通常、各ユニットセルCまたは制御電極Eの大きさは、約0.05mm〜約2mmの間である。
1.5mmピッチで7つの相互嵌合した制御電極Eの単一の直線的アレイからなるプロトタイプデバイスを製造し、テストを行った。標準的なマイクロ製造技術を用いて、2000オングストローム厚のクロム層をガラス製の下側プレート21上にパターン形成することにより、制御電極Eを形成した。チップは、7000オングストローム厚のパリレンCをコーティングした後、テフロン(登録商標)AF1600からなる約2000オングストローム厚の層をコーティングした。接地電極Gは、透明インジウムスズ酸化物(ITO)からなる導電層(Rζ<20Ω/平方)でコーティングされたガラス製の上側プレート25を有する。同様に、テフロン(登録商標)AF1600からなる薄膜27(〜500オングストローム)を接地電極Gに付設した。接地電極G上の薄いTEFLON(登録商標)コーティングは、表面を疎水化させるが、絶縁性ではなかった。テフロン(登録商標)でコーティングした後、両方の表面は水に対して104°の接触角を有する。
本発明に基づき小滴を混合させるためのいくつかの手法の具体例を以下説明する。図8A−8Bを参照すると、図1を参照して上記説明したエレクトロウェッティング・マイクロアクチュエータ10などの構成を採用して、2つまたはそれ以上の小滴、すなわち小滴D1,D2に関する併合動作および混合動作を行うことができる。図8A−8Bにおいて、小滴D1,D2は、当初、それぞれ制御電極E2,E5の中央に配置される。図5A−5Cを参照して先に説明したように、小滴D1,D2は、エレクトロウェッティングを用いて駆動し、互いに向かって移動し、最終的な電極上において一体に併合する。最終的な電極は、電極E3,E4などの中間に配置された電極であってもよい。択一的には、1つの小滴が1つまたはそれ以上の制御電極を超えて移動し、別の静止した小滴と併合してもよい。すなわち、図8A−8Bに示すように、小滴D1を駆動して、矢印に示すように、中間電極E3,E4を超えて移動させ、電極上にある小滴D2と電極E5上で併合する。合体小滴は、1次元の直線的な混合、2次元の直線的な混合、または2次元のループ状の混合の手法により能動的に混合される。
図15A−15Bを参照すると、連続フロー入力源61からサンプリングし、小滴を処理するための本発明の方法が概略的に図示されている。とりわけ、この方法は、後続の小滴方式のチップ上および/またはチップ外の処理(例えば、混合、反応、培養、分析、検定、モニタなど)のための準備として、上述のようなエレクトロウェッティング技術を用いて、連続フロー入力源61から均一の大きさを有するサンプル小滴Sを個別化することができる。この文脈において、「連続的(continuous)」なる用語は、より少量の小滴に個別化されていない所定量の液体を意味するのとする。連続フロー入力源の非限定的な具体例として、適当なソース(源)または供給デバイスから基板表面または他の表面に導入されるキャピラリィスケールのストリーム、フィンガ、スラグ、アリクォート、および計量された用量が挙げられる。サンプル小滴Sは、通常、件の被分析物質(例えば、質量分析装置などを用いて特定される薬理効果を有する分子、または分光装置などを用いて特定すべき濃度を有する既知の分子)を含む。図15A−15Bに示すいくつかのサンプル小滴Sは、連続フロー源61から個別化された独立した複数のサンプル小滴Sであるか、あるいは電極のシーケンス処理に応じて形成されるさまざまな分析フロー経路に沿って、長時間電極アレイ上の異なる位置に移動可能な単一のサンプル小滴Sである。
図17を参照すると、一般に符号100で示す本発明のバイナリ混合装置が図示されている。バイナリ混合装置100は、所望の混合比を得るために、1つ、2つまたはそれ以上の混合段階における多様な小滴方式の希釈バイナリ混合技術を実現する上で有用である。得られる混合比の正確な度合いは、使用される離散的バイナリ混合ユニットの数に依存する。1つの具体例として、図17は、第1のバイナリ混合ユニット110と、第2のバイナリ混合ユニット210とを概略的に図示している。1つ以上の混合ユニットがある場合、好適には、これらの混合ユニットと流体連通するバッファ310が設けられ、必要に応じ、中間生成物を貯蔵し、混合ユニット間で搬送する。コンピュータプログラムの指令を実行することができるマイクロプロセッサなどの適当な電気コントローラECが、適当な通信ライン111,211,311を介して、それぞれ第1のバイナリ混合ユニット110、第2のバイナリ混合ユニット210、およびバッファ310と通信する。
1.化学的処理および/または物理的処理において、十分な時間をかけると、完全に混合させることができる。
2.物理的容量および化学的成分において、同等の小滴が分離される。
3.小滴が搬送される間、残渣は無視できるほど少ない。
4.大きい希釈比で混合する時間はボトルネックである。
5.混合比に対して公差がある。
6.混合時間に対して搬送時間は無視できるほど短い。
1.検出可能性を保証する混合物アウトプットの最小容量
2.独立した制御電極の最大数
3.最大混合領域
4.電極あたりの最大駆動数
5.異なる混合比に対する再構築可能性
1.正確な混合比
2.少ない混合サイクル回数
数多くの混合プロセスは1つ以上の混合段階を含むので、2つのバイナリ混合ユニット110および210は、第1段階において、互いに並行し、かつ独立して処理される。しかし、第2段階は、第1段階が完了した後にのみ開始することができる。すなわち、2段階の混合の全体的な混合時間は、第1段階における第1および第2のバイナリ混合ユニット110,210の最大混合時間に、第1バイナリ混合ユニット110または第2バイナリ混合ユニット210のいずれかで第2段階での混合時間を加えたものである。したがって、混合サイクルは、1つの混合処理を完了させるために要する全体的な混合時間として定義される。混合処理において標準化され、例えば、小滴搬送と比較して、最も時間の要する処理であると推定される。
3.少ない全体的混合動作回数
混合、分割、および/または搬送からなる単一のバイナリ混合動作は、誤差の源である。より回数の多い混合動作は、より多くの電極を使用することを意味し、電極上に帯電した電荷に起因して別の誤差を招き得る。
4.動作の単純性
5.寸法拡張性
多くの収量が要求される場合に、異なる混合比を処理するためのバイナリ混合装置100の機能および複数の混合ユニットに対する拡張性
6.並行性
1.S(1,1)を充填し、R(2,1)を充填し、1,2列を混合する。
2.((1,1)を廃棄し、R(3,1)を充填し、)2,3列を混合する。
3.R(1,1)を充填し、R(3,1)を充填する。
(1,2列および3,4列を混合する)。
4.2行を充填し、1,2行を混合する。
5.2行を3行へ、1行を2行へ移し、1行を充填し、4行を充填する。
(1,2行および3,4行を混合する)。
6.終了。
これまで、図1に示すマイクロアクチュエータ10などの両面電極構造を有する小滴駆動装置を用いて、本発明の態様について説明してきた。すなわち、下側プレーン12が制御または駆動電極E1−E3を含み、上側プレーン14が接地電極Gを含む。マイクロアクチュエータ機構10に関して、上側プレーン14の機能は、小滴Dを接地電位またはいくつかの他の基準電位にバイアスすることである。下側プレーン12の駆動電極E1−E3を選択的にバイアスして、上側プレーン14を接地すると、電位差が形成され、段階的なエレクトロウェッティング技術により小滴Dを移動させることができる。しかし、本発明の別の実施形態によれば、接地された上側プレーン14の必要性を排除することにより、2次元エレクトロウェッティング方式の小滴操作のために採用された装置のデザインを簡略化し、よりフレキシブルに構成することができる。
Claims (20)
- 電圧誘起されたエレクトロウェッティング効果による小滴内の表面張力勾配に依拠して、連続液体フローをサンプリングする方法であって、
(a)基板表面を含む基板と、基板表面上に互いに離間して配置された複数の駆動電極と、隣接する駆動電極の間に、これらと実質的に同一平面上に配設された、基準電位に設定された複数の導通ラインと、駆動電極をカバーし、導通ラインを露出させるように形成された誘電層とを有する装置を提供するステップと、
(b)入力フロー経路に沿って基板表面に液体フローを供給するステップと、
(c)選択された駆動電極に順次、駆動電圧をバイアスするように、複数の駆動電極の中から選択された1つまたはそれ以上の駆動電極を順次活性化し、不活性化することにより、
(c−1)連続液体フローの一部から第1および第2のサンプル小滴を形成し、
(c−2)第1のサンプル小滴を第1の搬送フロー経路に沿って表面の第1の目的地領域まで移動させ、
(c−3)第2のサンプル小滴を第2の搬送フロー経路に沿って表面の第2の目的地領域まで移動させるステップとを有することを特徴とする方法。 - 請求項1に記載の方法であって、
第1のサンプル小滴を第1の移動速度で移動させ、
第2のサンプル小滴を第1の移動速度と実質的に同等の第2の移動速度で移動させることを特徴とする方法。 - 請求項1に記載の方法であって、
第1のサンプル小滴を第1の移動速度で移動させ、
第2のサンプル小滴を第1の移動速度とは異なる第2の移動速度で移動させることを特徴とする方法。 - 請求項1に記載の方法であって、
第1のサンプル小滴を第1の目的地領域で処理するステップと、
第2のサンプル小滴を第2の目的地領域で処理するステップとを有することを特徴とする方法。 - 請求項4に記載の方法であって、
第1のサンプル小滴を処理するステップは、第1のサンプル小滴に第1の追加的小滴を併合するステップを有することを特徴とする方法。 - 請求項5に記載の方法であって、
第2のサンプル小滴を処理するステップは、第2のサンプル小滴に第2の追加的小滴を併合するステップを有することを特徴とする方法。 - 請求項6に記載の方法であって、
第1のおよび第2の追加的小滴は異なる成分を有することを特徴とする方法。 - 請求項4に記載の方法であって、
第1のおよび第2のサンプル小滴は実質的に同時に処理されることを特徴とする方法。 - 請求項4に記載の方法であって、
第1のおよび第2のサンプル小滴は異なる速度で処理されることを特徴とする方法。 - 請求項1に記載の方法であって、
第1の目的地領域は、第1の処理を実施するためのものであり、
第2の目的地領域は、第1の処理とは異なる第2の処理を実施するためのものであることを特徴とする方法。 - 請求項1に記載の方法であって、
第1および第2の目的地領域は、同一の領域であることを特徴とする方法。 - 請求項1に記載の方法であって、
第1および第2のサンプル小滴は、入力フロー経路に沿った異なる位置で形成されることを特徴とする方法。 - 電圧誘起されたエレクトロウェッティング効果による小滴内の表面張力勾配に依拠して、マイクロ流体サンプリングを実施する方法であって、
(a)第1、第2および第3の電極を有し、第2の電極が第1および第3の電極の間に配置された基板を提供するステップと、
(b)流体入力フローストリームを第1の電極に流すステップと、
(c)流体入力フローストリームの一部が第2および第3の電極にわたって拡張するように第1、第2および第3の電極を活性化するステップと、
(d)流体入力フローストリームとは分離された小滴を第3の電極上に形成するために、第2の電極を不活性化するステップとを有することを特徴とする方法。 - 請求項13に記載の方法であって、
流体入力フローストリームは、基板上を入力方向に沿って流れ、
第2および第3の電極は、入力方向に沿って配置されることを特徴とする方法。 - 請求項13に記載の方法であって、
流体入力フローストリームは、基板上を入力方向に沿って流れ、
第2および第3の電極は、入力方向とは異なる搬送方向に沿って配置されることを特徴とする方法。 - 請求項13に記載の方法であって、
選択された一連の追加的電極を順次活性化し、不活性化することにより、小滴を基板の処理領域に移動させるステップを有することを特徴とする方法。 - 請求項13に記載の方法であって、
上記ステップ(c)および(d)を所望する回数だけ反復することにより、複数の小滴を形成するステップを有することを特徴とする方法。 - 請求項13に記載の方法であって、
流体出力フローストリームを形成するために、2つまたはそれ以上の小滴を基板上で再併合するステップを有することを特徴とする方法。 - 電圧誘起されたエレクトロウェッティング効果による小滴内の表面張力勾配に依拠して、連続液体フローをサンプリングする方法であって、
(a)第1フロー経路に沿って表面に液体フローを供給するステップと、
(b)サンプル小滴を表面上に形成するためにエレクトロウェッティング処理を実行することにより流体フローをサンプリングするステップとを有し、
エレクトロウェッティング処理は、
表面上に一連の電極を設けるステップと、
流体フローの少なくとも一部を導電部材および第1の電極に接触するように配置するステップと、
一連の電極を選択的に活性化し、不活性化するステップとを有し、
第2の電極が第1の電極に隣接して配置され、第3の電極が第2の電極に隣接して配置され、
エレクトロウェッティング処理は、
流体フローの一部が第2および第3の電極にわたって拡張するように、第1、第2および第3の電極を活性化するステップと、
サンプル小滴を第3の電極上で形成するために、第2の電極を不活性化するステップとを有することを特徴とする方法。 - 請求項19に記載の方法であって、
エレクトロウェッティング処理を実行することにより、サンプル小滴を第2フロー経路に沿って移動させるステップを有することを特徴とする方法。
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