JP4621023B2 - 線形または論理回路を有する基板に対するフラッシュｅｅｐｒｏｍの形成方法 - Google Patents

線形または論理回路を有する基板に対するフラッシュｅｅｐｒｏｍの形成方法 Download PDF

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JP4621023B2
JP4621023B2 JP2004533457A JP2004533457A JP4621023B2 JP 4621023 B2 JP4621023 B2 JP 4621023B2 JP 2004533457 A JP2004533457 A JP 2004533457A JP 2004533457 A JP2004533457 A JP 2004533457A JP 4621023 B2 JP4621023 B2 JP 4621023B2
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eeprom
layer
linear
forming
region
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JP2005537671A (ja
JP2005537671A5 (https=
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シュム，ダニー
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Infineon Technologies AG
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Infineon Technologies AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2004533457A 2002-09-04 2003-09-03 線形または論理回路を有する基板に対するフラッシュｅｅｐｒｏｍの形成方法 Expired - Fee Related JP4621023B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/234,344 US6841824B2 (en) 2002-09-04 2002-09-04 Flash memory cell and the method of making separate sidewall oxidation
PCT/EP2003/009779 WO2004023558A2 (en) 2002-09-04 2003-09-03 Flash memory cell and the method of making separate sidewall oxidation

Publications (3)

Publication Number Publication Date
JP2005537671A JP2005537671A (ja) 2005-12-08
JP2005537671A5 JP2005537671A5 (https=) 2009-06-18
JP4621023B2 true JP4621023B2 (ja) 2011-01-26

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JP2004533457A Expired - Fee Related JP4621023B2 (ja) 2002-09-04 2003-09-03 線形または論理回路を有する基板に対するフラッシュｅｅｐｒｏｍの形成方法

Country Status (7)

Country Link
US (2) US6841824B2 (https=)
EP (1) EP1535337B1 (https=)
JP (1) JP4621023B2 (https=)
CN (2) CN100530659C (https=)
DE (1) DE60335382D1 (https=)
TW (1) TWI231575B (https=)
WO (1) WO2004023558A2 (https=)

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US6972457B1 (en) * 2004-04-09 2005-12-06 Eastman Kodak Company Imaging cell that has a long integration period and method of operating the imaging cell
KR100624290B1 (ko) * 2004-06-14 2006-09-19 에스티마이크로일렉트로닉스 엔.브이. 플래쉬 메모리 소자의 제조 방법
ITMI20042532A1 (it) * 2004-12-28 2005-03-28 St Microelectronics Srl Metodo per fabbricare dispositivi elettronici di memoria non volatile integrati su un substrato semiconduttore comprendente una fase di deposizione di dielettrico premetal migliorata
US7679130B2 (en) 2005-05-10 2010-03-16 Infineon Technologies Ag Deep trench isolation structures and methods of formation thereof
US7495279B2 (en) * 2005-09-09 2009-02-24 Infineon Technologies Ag Embedded flash memory devices on SOI substrates and methods of manufacture thereof
US20070133289A1 (en) * 2005-12-01 2007-06-14 Aplus Flash Technology, Inc. NAND-type flash memory device with high voltage PMOS and embedded poly and methods of fabricating the same
US20080112231A1 (en) * 2006-11-09 2008-05-15 Danny Pak-Chum Shum Semiconductor devices and methods of manufacture thereof
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US8916909B2 (en) * 2012-03-06 2014-12-23 Infineon Technologies Austria Ag Semiconductor device and method for fabricating a semiconductor device
CN108630700A (zh) * 2017-03-22 2018-10-09 中芯国际集成电路制造(上海)有限公司 闪存器件及其制造方法
US10297602B2 (en) 2017-05-18 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Implantations for forming source/drain regions of different transistors
KR102212751B1 (ko) 2019-07-26 2021-02-04 주식회사 키 파운드리 비휘발성 메모리 소자 및 그 제조방법
TW202118280A (zh) * 2019-09-10 2021-05-01 日商索尼半導體解決方案公司 攝像裝置、電子機𠾖及製造方法

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JP2002118177A (ja) 2000-10-11 2002-04-19 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2005537671A (ja) 2005-12-08
US7081381B2 (en) 2006-07-25
CN101483178B (zh) 2011-08-03
US6841824B2 (en) 2005-01-11
CN1679166A (zh) 2005-10-05
WO2004023558A2 (en) 2004-03-18
WO2004023558A3 (en) 2004-09-02
CN100530659C (zh) 2009-08-19
TW200409302A (en) 2004-06-01
EP1535337B1 (en) 2010-12-15
US20040041205A1 (en) 2004-03-04
EP1535337A2 (en) 2005-06-01
TWI231575B (en) 2005-04-21
CN101483178A (zh) 2009-07-15
US20050040474A1 (en) 2005-02-24
DE60335382D1 (de) 2011-01-27

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