JP4850174B2 - 半導体装置及びその製造方法 - Google Patents
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Description
12…素子分離膜
14,84,88,136…シリコン酸化膜
16,20,26,30,36,42,52,56,60,64,82,86,90,110,114,118,124,128,132,138,148、152…フォトレジスト膜
18…n型埋め込み不純物層
22,24,28…p型ウェル用不純物層
32,34…n型ウェル用不純物層
38,44,54,58,62,66…閾値電圧制御用不純物層
40…チャネルストップ層
46…トンネル酸化膜
48…フローティングゲート
50…ONO膜
68,72,76…p型ウェル
70,74,78,80…n型ウェル
92,94,96…ゲート絶縁膜
98…ポリシリコン膜
100,136…シリコン窒化膜
102…コントロールゲート電極
104,150,154…ソース/ドレイン領域
106,144…サイドウォールスペーサ
108…ゲート電極
112,116,122,126,130,134…エクステンション
120…バラスト抵抗用の不純物層
146…サリサイドブロック
156…シリサイド膜
158…絶縁膜
160…電極プラグ
162…配線
本発明の第1実施形態による半導体装置及びその製造方法について図1乃至図7を用いて説明する。
本発明の第2実施形態による半導体装置及びその製造方法について図8乃至図21を用いて説明する。なお、図2乃至図7に示す第1実施形態による半導体装置及びその製造方法と同様の構成要素には同一の符号を付し説明を省略し或いは簡潔にする。
本発明の第3実施形態による半導体装置及びその製造方法について図22乃至図40を用いて説明する。なお、図1乃至図21に示す第1及び第2実施形態による半導体装置及びその製造方法と同様の構成要素には同一の符号を付し説明を省略し或いは簡潔にする。
本発明は上記実施形態に限らず種々の変形が可能である。
Claims (8)
- 半導体基板上に形成され、第1のゲート絶縁膜と、前記第1のゲート絶縁膜上に形成された第1のゲート電極と、前記半導体基板内に形成された第1のソース/ドレイン領域とを有する第1のMISトランジスタと、
前記半導体基板上に形成され、前記第1のゲート絶縁膜よりも厚い第2のゲート絶縁膜と、前記第2のゲート絶縁膜上に形成された第2のゲート電極と、前記半導体基板内に形成された第2のソース/ドレイン領域と、前記第2のソース/ドレイン領域に接続して前記半導体基板内に形成されたバラスト抵抗とを有する第2のMISトランジスタと、
前記バラスト抵抗上に、前記第2のゲート絶縁膜より薄い絶縁膜を介して形成されたサリサイドブロック絶縁膜と、
前記第1のソース/ドレイン領域上及び前記第2のソース/ドレイン領域上に形成されたシリサイド膜とを有し、
前記バラスト抵抗の不純物濃度は、前記第2のソース/ドレイン領域のLDD領域又はエクステンション領域の不純物濃度よりも高濃度である
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記絶縁膜の膜厚は、前記第1のゲート絶縁膜の膜厚以下である
ことを特徴とする半導体装置。 - 請求項1又は2記載の半導体装置において、
前記第1のソース/ドレイン領域は、前記第1のゲート電極に整合して形成された第1の不純物層を有し、
前記第2のソース/ドレイン領域は、前記第2のゲート電極に整合して形成された第2の不純物層を有し、
前記バラスト抵抗は、前記第1の不純物層と同時に形成された第3の不純物層と、前記第2の不純物層と同時に形成された第4の不純物層とにより構成されている
ことを特徴とする半導体装置。 - 請求項3記載の半導体装置において、
前記第1の不純物層は、前記第1のソース/ドレイン領域のLDD領域又はエクステンション領域であり、
前記第2の不純物層は、前記第2のソース/ドレイン領域の前記LDD領域又は前記エクステンション領域である
ことを特徴とする半導体装置。 - 請求項1乃至4のいずれか1項に記載の半導体装置において、
前記第1のゲート電極の側壁部分に形成された側壁絶縁膜を更に有し、
前記絶縁膜の膜厚と、前記側壁絶縁膜下における前記第1のゲート絶縁膜の膜厚とが同じである
ことを特徴とする半導体装置。 - 半導体基板の第1の領域に第1のMISトランジスタが形成され、前記半導体基板の第2の領域にバラスト抵抗を有する第2のMISトランジスタが形成された半導体装置の製造方法であって、
前記半導体基板を熱酸化し、前記第1の領域及び前記第2の領域に第1の絶縁膜を形成する工程と、
前記第1の領域及び前記第2の領域の前記バラスト抵抗形成領域の前記第1の絶縁膜を除去する工程と、
前記半導体基板を熱酸化し、前記第1の領域及び前記バラスト抵抗形成領域に第1のゲート絶縁膜を形成し、前記バラスト抵抗形成領域を除く前記第2の領域に前記第1の絶縁膜を追加酸化してなる第2のゲート絶縁膜を形成する工程と、
前記第1のゲート絶縁膜上に第1のゲート電極を形成し、前記第2のゲート絶縁膜上に第2のゲート電極を形成する工程と、
前記第1の領域及び前記バラスト抵抗形成領域の前記半導体基板に、前記第1のゲート電極をマスクとして不純物を導入し、第1の不純物層を形成する工程と、
前記第2の領域の前記半導体基板に、前記第2のゲート電極をマスクとして不純物を導入し、第2の不純物層を形成する工程とを有し、
前記バラスト抵抗形成領域に、前記第1の不純物層及び前記第2の不純物層を有する前記バラスト抵抗を形成する
ことを特徴とする半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
前記第2の不純物層を形成する工程の後に、
第2の絶縁膜を形成する工程と、
前記バラスト抵抗形成領域の前記第2の絶縁膜上にマスク膜を形成する工程と、
前記マスク膜をマスクとして前記第2の絶縁膜をエッチバックし、前記第1のゲート電極及び前記第2のゲート電極の側壁部分に側壁絶縁膜を形成し、前記バラスト抵抗形成領域にサリサイドブロック絶縁膜を形成する工程と、
前記側壁絶縁膜及び前記サリサイドブロック絶縁膜により覆われていない前記半導体基板上に選択的にシリサイド膜を形成する工程と
を有することを特徴とする半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法において、
前記側壁絶縁膜及び前記サリサイドブロック絶縁膜を形成する工程の後に、前記第1のゲート電極、前記第2のゲート電極、前記側壁絶縁膜及び前記サリサイドブロック絶縁膜をマスクとして不純物を導入し、前記第1の領域の前記半導体基板内に第3の不純物層を形成し、前記第2の領域の前記半導体基板内に第4の不純物層を形成する工程を更に有する
ことを特徴とする半導体装置の製造方法。
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US8426267B2 (en) | 2013-04-23 |
US20110108925A1 (en) | 2011-05-12 |
US20110111567A1 (en) | 2011-05-12 |
US20080067599A1 (en) | 2008-03-20 |
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