JPWO2006117851A1 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JPWO2006117851A1 JPWO2006117851A1 JP2007514420A JP2007514420A JPWO2006117851A1 JP WO2006117851 A1 JPWO2006117851 A1 JP WO2006117851A1 JP 2007514420 A JP2007514420 A JP 2007514420A JP 2007514420 A JP2007514420 A JP 2007514420A JP WO2006117851 A1 JPWO2006117851 A1 JP WO2006117851A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 238000009792 diffusion process Methods 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000003860 storage Methods 0.000 claims abstract description 18
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 238000002513 implantation Methods 0.000 claims description 25
- 229910021332 silicide Inorganic materials 0.000 claims description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 238000005468 ion implantation Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 88
- 230000015654 memory Effects 0.000 description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 230000002093 peripheral effect Effects 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- -1 Metal Oxide Nitride Chemical class 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
Abstract
Description
Claims (12)
- 半導体基板上に設けられたゲート電極と、
該ゲート電極と前記半導体基板の間に形成され、前記ゲート電極の下に電荷蓄積領域を有するONO膜と、
前記半導体基板に埋め込まれ、低濃度拡散領域と、該低濃度拡散領域の中心部に形成され前記低濃度拡散領域より不純物濃度が高い高濃度拡散領域と、ソース領域およびドレイン領域を含むビットラインと、
を具備する半導体装置。 - 前記ビットラインは、前記低濃度拡散領域の両側に形成されたポケット注入拡散領域を含む請求項1記載の半導体装置
- 前記ONO膜は複数の前記電荷蓄積領域を有する請求項1または2記載の半導体装置。
- 前記ビットラインと交差し、前記ゲート電極上で接するワードラインを具備する請求項1から3のいずれか一項記載の半導体装置。
- 前記ゲート電極の側面に側壁を具備する請求項4記載の半導体装置。
- 前記ビットライン上に、ビットラインの長手方向に連続して形成されたシリサイド金属膜を具備する請求項1から5のいずれか一項記載の半導体装置。
- 半導体基板上にONO膜を形成する工程と、
前記ONO膜上にマスク層を形成する工程と、
前記マスク層をマスクにイオン注入し、前記半導体基板に埋め込まれ、ソース領域およびドレイン領域を含むビットラインを構成する低濃度拡散領域を形成する工程と、
前記マスク層および該マスク層の側面に形成された側壁をマスクにイオン注入し、前記低濃度拡散領域より不純物濃度が高く前記ビットラインを構成する高濃度拡散領域を形成する工程と、を具備する半導体装置の製造方法。 - 前記マスク層をマスクにポケット注入を行い、前記低濃度拡散領域の両側に、ポケット注入拡散領域を形成する請求項7記載の半導体装置の製造方法。
- 前記マスク層は、金属または絶縁膜を含む請求項7または8記載の半導体装置の製造方法。
- 前記マスク層上に金属層を形成する工程と、
前記金属層および前記マスク層をエッチングし、前記金属層を含むワードラインと前記マスク層を含むゲート電極を形成する工程と、を具備する請求項7または8記載の半導体装置の製造方法。 - 前記マスク層および前記側壁をマスクに前記ビットライン上にシリサイド金属膜を形成する工程を具備する請求項7または8記載の半導体装置の製造方法。
- 前記シリサイド金属膜上に選択的に樹脂層を形成する工程と、
前記マスク層を除去する工程と、を具備し、
前記マスク層を除去する工程において、前記樹脂層が前記ONO膜中のトラップ層を覆っている請求項11記載の半導体装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/008056 WO2006117851A1 (ja) | 2005-04-27 | 2005-04-27 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2006117851A1 true JPWO2006117851A1 (ja) | 2008-12-18 |
JP5047786B2 JP5047786B2 (ja) | 2012-10-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007514420A Active JP5047786B2 (ja) | 2005-04-27 | 2005-04-27 | 半導体装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7626227B2 (ja) |
EP (1) | EP1895582A4 (ja) |
JP (1) | JP5047786B2 (ja) |
CN (1) | CN101167180A (ja) |
TW (1) | TW200644258A (ja) |
WO (1) | WO2006117851A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7678654B2 (en) * | 2006-06-30 | 2010-03-16 | Qimonda Ag | Buried bitline with reduced resistance |
JP2009049138A (ja) * | 2007-08-17 | 2009-03-05 | Spansion Llc | 半導体装置の製造方法 |
JP5379366B2 (ja) * | 2007-09-20 | 2013-12-25 | スパンション エルエルシー | 半導体装置およびその製造方法 |
JP5274878B2 (ja) * | 2008-04-15 | 2013-08-28 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US7943983B2 (en) * | 2008-12-22 | 2011-05-17 | Spansion Llc | HTO offset spacers and dip off process to define junction |
US8653581B2 (en) * | 2008-12-22 | 2014-02-18 | Spansion Llc | HTO offset for long Leffective, better device performance |
CN106876401B (zh) * | 2017-03-07 | 2018-10-30 | 长江存储科技有限责任公司 | 存储器件的形成方法 |
JP2020145290A (ja) * | 2019-03-05 | 2020-09-10 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3397804B2 (ja) * | 1992-06-09 | 2003-04-21 | シチズン時計株式会社 | 不揮発性メモリの製造方法 |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6348711B1 (en) * | 1998-05-20 | 2002-02-19 | Saifun Semiconductors Ltd. | NROM cell with self-aligned programming and erasure areas |
JP2000260890A (ja) * | 1999-03-12 | 2000-09-22 | Nec Corp | 不揮発性メモリ及びその製造方法 |
JP2001148434A (ja) * | 1999-10-12 | 2001-05-29 | New Heiro:Kk | 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ |
US6248633B1 (en) * | 1999-10-25 | 2001-06-19 | Halo Lsi Design & Device Technology, Inc. | Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory |
JP4923318B2 (ja) * | 1999-12-17 | 2012-04-25 | ソニー株式会社 | 不揮発性半導体記憶装置およびその動作方法 |
US6417081B1 (en) * | 2000-05-16 | 2002-07-09 | Advanced Micro Devices, Inc. | Process for reduction of capacitance of a bitline for a non-volatile memory cell |
US7125763B1 (en) * | 2000-09-29 | 2006-10-24 | Spansion Llc | Silicided buried bitline process for a non-volatile memory cell |
JP4051175B2 (ja) * | 2000-11-17 | 2008-02-20 | スパンション エルエルシー | 不揮発性半導体メモリ装置および製造方法 |
JP4083975B2 (ja) * | 2000-12-11 | 2008-04-30 | 株式会社ルネサステクノロジ | 半導体装置 |
US6559010B1 (en) * | 2001-12-06 | 2003-05-06 | Macronix International Co., Ltd. | Method for forming embedded non-volatile memory |
JP4340156B2 (ja) * | 2002-02-21 | 2009-10-07 | パナソニック株式会社 | 半導体記憶装置の製造方法 |
JP2004095893A (ja) * | 2002-08-30 | 2004-03-25 | Nec Electronics Corp | 半導体記憶装置及びその制御方法と製造方法 |
JP2004253571A (ja) | 2003-02-19 | 2004-09-09 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
US6754105B1 (en) * | 2003-05-06 | 2004-06-22 | Advanced Micro Devices, Inc. | Trench side wall charge trapping dielectric flash memory device |
JP4818578B2 (ja) * | 2003-08-06 | 2011-11-16 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
US6987048B1 (en) * | 2003-08-06 | 2006-01-17 | Advanced Micro Devices, Inc. | Memory device having silicided bitlines and method of forming the same |
US6939767B2 (en) * | 2003-11-19 | 2005-09-06 | Freescale Semiconductor, Inc. | Multi-bit non-volatile integrated circuit memory and method therefor |
US7151293B1 (en) * | 2004-08-27 | 2006-12-19 | Spansion, Llc | SONOS memory with inversion bit-lines |
-
2005
- 2005-04-27 CN CNA2005800495925A patent/CN101167180A/zh active Pending
- 2005-04-27 JP JP2007514420A patent/JP5047786B2/ja active Active
- 2005-04-27 WO PCT/JP2005/008056 patent/WO2006117851A1/ja not_active Application Discontinuation
- 2005-04-27 EP EP05737365A patent/EP1895582A4/en not_active Withdrawn
-
2006
- 2006-04-27 US US11/414,082 patent/US7626227B2/en active Active
- 2006-04-27 TW TW095115025A patent/TW200644258A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW200644258A (en) | 2006-12-16 |
EP1895582A1 (en) | 2008-03-05 |
EP1895582A4 (en) | 2009-09-23 |
CN101167180A (zh) | 2008-04-23 |
JP5047786B2 (ja) | 2012-10-10 |
WO2006117851A1 (ja) | 2006-11-09 |
US20070045720A1 (en) | 2007-03-01 |
US7626227B2 (en) | 2009-12-01 |
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