TW200644258A - Semiconductor device and manufacturing method therefor - Google Patents
Semiconductor device and manufacturing method thereforInfo
- Publication number
- TW200644258A TW200644258A TW095115025A TW95115025A TW200644258A TW 200644258 A TW200644258 A TW 200644258A TW 095115025 A TW095115025 A TW 095115025A TW 95115025 A TW95115025 A TW 95115025A TW 200644258 A TW200644258 A TW 200644258A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- semiconductor substrate
- semiconductor device
- gate electrode
- low concentration
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/008056 WO2006117851A1 (ja) | 2005-04-27 | 2005-04-27 | 半導体装置およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200644258A true TW200644258A (en) | 2006-12-16 |
Family
ID=37307658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095115025A TW200644258A (en) | 2005-04-27 | 2006-04-27 | Semiconductor device and manufacturing method therefor |
Country Status (6)
Country | Link |
---|---|
US (1) | US7626227B2 (zh) |
EP (1) | EP1895582A4 (zh) |
JP (1) | JP5047786B2 (zh) |
CN (1) | CN101167180A (zh) |
TW (1) | TW200644258A (zh) |
WO (1) | WO2006117851A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7678654B2 (en) * | 2006-06-30 | 2010-03-16 | Qimonda Ag | Buried bitline with reduced resistance |
JP2009049138A (ja) * | 2007-08-17 | 2009-03-05 | Spansion Llc | 半導体装置の製造方法 |
JP5379366B2 (ja) * | 2007-09-20 | 2013-12-25 | スパンション エルエルシー | 半導体装置およびその製造方法 |
JP5274878B2 (ja) * | 2008-04-15 | 2013-08-28 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US7943983B2 (en) * | 2008-12-22 | 2011-05-17 | Spansion Llc | HTO offset spacers and dip off process to define junction |
US8653581B2 (en) * | 2008-12-22 | 2014-02-18 | Spansion Llc | HTO offset for long Leffective, better device performance |
CN106876401B (zh) * | 2017-03-07 | 2018-10-30 | 长江存储科技有限责任公司 | 存储器件的形成方法 |
JP2020145290A (ja) * | 2019-03-05 | 2020-09-10 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3397804B2 (ja) * | 1992-06-09 | 2003-04-21 | シチズン時計株式会社 | 不揮発性メモリの製造方法 |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6348711B1 (en) * | 1998-05-20 | 2002-02-19 | Saifun Semiconductors Ltd. | NROM cell with self-aligned programming and erasure areas |
JP2000260890A (ja) * | 1999-03-12 | 2000-09-22 | Nec Corp | 不揮発性メモリ及びその製造方法 |
JP2001148434A (ja) * | 1999-10-12 | 2001-05-29 | New Heiro:Kk | 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ |
US6248633B1 (en) * | 1999-10-25 | 2001-06-19 | Halo Lsi Design & Device Technology, Inc. | Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory |
JP4923318B2 (ja) * | 1999-12-17 | 2012-04-25 | ソニー株式会社 | 不揮発性半導体記憶装置およびその動作方法 |
US6417081B1 (en) * | 2000-05-16 | 2002-07-09 | Advanced Micro Devices, Inc. | Process for reduction of capacitance of a bitline for a non-volatile memory cell |
US7125763B1 (en) * | 2000-09-29 | 2006-10-24 | Spansion Llc | Silicided buried bitline process for a non-volatile memory cell |
JP4051175B2 (ja) * | 2000-11-17 | 2008-02-20 | スパンション エルエルシー | 不揮発性半導体メモリ装置および製造方法 |
JP4083975B2 (ja) * | 2000-12-11 | 2008-04-30 | 株式会社ルネサステクノロジ | 半導体装置 |
US6559010B1 (en) * | 2001-12-06 | 2003-05-06 | Macronix International Co., Ltd. | Method for forming embedded non-volatile memory |
CN100367517C (zh) * | 2002-02-21 | 2008-02-06 | 松下电器产业株式会社 | 半导体存储装置及其制造方法 |
JP2004095893A (ja) * | 2002-08-30 | 2004-03-25 | Nec Electronics Corp | 半導体記憶装置及びその制御方法と製造方法 |
JP2004253571A (ja) | 2003-02-19 | 2004-09-09 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
US6754105B1 (en) * | 2003-05-06 | 2004-06-22 | Advanced Micro Devices, Inc. | Trench side wall charge trapping dielectric flash memory device |
JP4818578B2 (ja) * | 2003-08-06 | 2011-11-16 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
US6987048B1 (en) * | 2003-08-06 | 2006-01-17 | Advanced Micro Devices, Inc. | Memory device having silicided bitlines and method of forming the same |
US6939767B2 (en) * | 2003-11-19 | 2005-09-06 | Freescale Semiconductor, Inc. | Multi-bit non-volatile integrated circuit memory and method therefor |
US7151293B1 (en) * | 2004-08-27 | 2006-12-19 | Spansion, Llc | SONOS memory with inversion bit-lines |
-
2005
- 2005-04-27 JP JP2007514420A patent/JP5047786B2/ja active Active
- 2005-04-27 WO PCT/JP2005/008056 patent/WO2006117851A1/ja not_active Application Discontinuation
- 2005-04-27 CN CNA2005800495925A patent/CN101167180A/zh active Pending
- 2005-04-27 EP EP05737365A patent/EP1895582A4/en not_active Withdrawn
-
2006
- 2006-04-27 US US11/414,082 patent/US7626227B2/en active Active
- 2006-04-27 TW TW095115025A patent/TW200644258A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP5047786B2 (ja) | 2012-10-10 |
EP1895582A4 (en) | 2009-09-23 |
CN101167180A (zh) | 2008-04-23 |
US7626227B2 (en) | 2009-12-01 |
US20070045720A1 (en) | 2007-03-01 |
JPWO2006117851A1 (ja) | 2008-12-18 |
WO2006117851A1 (ja) | 2006-11-09 |
EP1895582A1 (en) | 2008-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200644258A (en) | Semiconductor device and manufacturing method therefor | |
EP1487023A3 (en) | Semiconductor device comprising a MIS transistor and method for manufacturing the same | |
TW200616095A (en) | Ultra-thin body super-steep retrograde well (SSRW) fet devices | |
TW200605350A (en) | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate | |
TW200503115A (en) | An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same | |
TW200707738A (en) | Substrate backgate for trigate FET | |
TW200505016A (en) | Semiconductor device, its fabrication method, and electronic device | |
TW200638470A (en) | Transistor structure of memory device and method for fabricating the same | |
EP2450955A3 (en) | Termination and contact structures for a high voltage GaN-based heterojunction transistor | |
EP1641046A3 (en) | MOSFET and method for fabricating the same | |
TW200620561A (en) | Integrated circuit and method of fabricating the same | |
TW200717777A (en) | Semiconductor memory device and manufacturing method thereof | |
US20140239371A1 (en) | Field effect transistor with self-adjusting threshold voltage | |
EP1401024A3 (en) | Semiconductor device and method for fabricating the same | |
TW200505030A (en) | MOS type semi conductor device | |
US20080142910A1 (en) | Semiconductor device | |
JP5670605B2 (ja) | 半導体装置 | |
EP1191604A3 (en) | Semiconductor memory device | |
TW200642087A (en) | Semiconductor device and method of manufacturing the same | |
JP5676807B1 (ja) | 半導体装置 | |
US6429082B1 (en) | Method of manufacturing a high voltage using a latid process for forming a LDD | |
TWI256673B (en) | High voltage metal oxide semiconductor and fabricating method thereof | |
JP2007088488A (ja) | 電界効果トランジスタ及びその製造方法 | |
JP6250210B2 (ja) | 半導体装置 | |
EP1422760A3 (en) | Thin film transistors and organic electroluminescent device using the same |