CN101483178B - 快闪存储单元及造成分离侧壁氧化的方法 - Google Patents

快闪存储单元及造成分离侧壁氧化的方法 Download PDF

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Publication number
CN101483178B
CN101483178B CN2009100054848A CN200910005484A CN101483178B CN 101483178 B CN101483178 B CN 101483178B CN 2009100054848 A CN2009100054848 A CN 2009100054848A CN 200910005484 A CN200910005484 A CN 200910005484A CN 101483178 B CN101483178 B CN 101483178B
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insulating layer
transistors
logic
linear
circuit
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Expired - Fee Related
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CN2009100054848A
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Chinese (zh)
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CN101483178A (zh
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D·沈
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Infineon Technologies AG
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Infineon Technologies AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2009100054848A 2002-09-04 2003-09-03 快闪存储单元及造成分离侧壁氧化的方法 Expired - Fee Related CN101483178B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/234,344 US6841824B2 (en) 2002-09-04 2002-09-04 Flash memory cell and the method of making separate sidewall oxidation
US10/234344 2002-09-04

Related Parent Applications (1)

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CNB038210924A Division CN100530659C (zh) 2002-09-04 2003-09-03 快闪存储单元及造成分离侧壁氧化的方法

Publications (2)

Publication Number Publication Date
CN101483178A CN101483178A (zh) 2009-07-15
CN101483178B true CN101483178B (zh) 2011-08-03

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CN2009100054848A Expired - Fee Related CN101483178B (zh) 2002-09-04 2003-09-03 快闪存储单元及造成分离侧壁氧化的方法
CNB038210924A Expired - Fee Related CN100530659C (zh) 2002-09-04 2003-09-03 快闪存储单元及造成分离侧壁氧化的方法

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US (2) US6841824B2 (https=)
EP (1) EP1535337B1 (https=)
JP (1) JP4621023B2 (https=)
CN (2) CN101483178B (https=)
DE (1) DE60335382D1 (https=)
TW (1) TWI231575B (https=)
WO (1) WO2004023558A2 (https=)

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US8916909B2 (en) 2012-03-06 2014-12-23 Infineon Technologies Austria Ag Semiconductor device and method for fabricating a semiconductor device
CN108630700A (zh) * 2017-03-22 2018-10-09 中芯国际集成电路制造(上海)有限公司 闪存器件及其制造方法
US10297602B2 (en) 2017-05-18 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Implantations for forming source/drain regions of different transistors
KR102212751B1 (ko) * 2019-07-26 2021-02-04 주식회사 키 파운드리 비휘발성 메모리 소자 및 그 제조방법
TW202118280A (zh) * 2019-09-10 2021-05-01 日商索尼半導體解決方案公司 攝像裝置、電子機𠾖及製造方法

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Also Published As

Publication number Publication date
CN100530659C (zh) 2009-08-19
JP2005537671A (ja) 2005-12-08
TW200409302A (en) 2004-06-01
WO2004023558A2 (en) 2004-03-18
DE60335382D1 (de) 2011-01-27
EP1535337A2 (en) 2005-06-01
JP4621023B2 (ja) 2011-01-26
TWI231575B (en) 2005-04-21
WO2004023558A3 (en) 2004-09-02
US20040041205A1 (en) 2004-03-04
US6841824B2 (en) 2005-01-11
US20050040474A1 (en) 2005-02-24
US7081381B2 (en) 2006-07-25
CN101483178A (zh) 2009-07-15
EP1535337B1 (en) 2010-12-15
CN1679166A (zh) 2005-10-05

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