TWI231575B - Flash memory cell and the method of making separate sidewall oxidation - Google Patents
Flash memory cell and the method of making separate sidewall oxidation Download PDFInfo
- Publication number
- TWI231575B TWI231575B TW092123836A TW92123836A TWI231575B TW I231575 B TWI231575 B TW I231575B TW 092123836 A TW092123836 A TW 092123836A TW 92123836 A TW92123836 A TW 92123836A TW I231575 B TWI231575 B TW I231575B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- linear
- logic
- patent application
- eeprom
- Prior art date
Links
- 238000007254 oxidation reaction Methods 0.000 title claims description 6
- 230000003647 oxidation Effects 0.000 title claims description 5
- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 21
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 3
- 230000002411 adverse Effects 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 abstract 1
- 230000009977 dual effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/234,344 US6841824B2 (en) | 2002-09-04 | 2002-09-04 | Flash memory cell and the method of making separate sidewall oxidation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200409302A TW200409302A (en) | 2004-06-01 |
| TWI231575B true TWI231575B (en) | 2005-04-21 |
Family
ID=31977402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092123836A TWI231575B (en) | 2002-09-04 | 2003-08-28 | Flash memory cell and the method of making separate sidewall oxidation |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6841824B2 (https=) |
| EP (1) | EP1535337B1 (https=) |
| JP (1) | JP4621023B2 (https=) |
| CN (2) | CN100530659C (https=) |
| DE (1) | DE60335382D1 (https=) |
| TW (1) | TWI231575B (https=) |
| WO (1) | WO2004023558A2 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6909139B2 (en) * | 2003-06-27 | 2005-06-21 | Infineon Technologies Ag | One transistor flash memory cell |
| US7160771B2 (en) * | 2003-11-28 | 2007-01-09 | International Business Machines Corporation | Forming gate oxides having multiple thicknesses |
| US6972457B1 (en) * | 2004-04-09 | 2005-12-06 | Eastman Kodak Company | Imaging cell that has a long integration period and method of operating the imaging cell |
| KR100624290B1 (ko) * | 2004-06-14 | 2006-09-19 | 에스티마이크로일렉트로닉스 엔.브이. | 플래쉬 메모리 소자의 제조 방법 |
| ITMI20042532A1 (it) * | 2004-12-28 | 2005-03-28 | St Microelectronics Srl | Metodo per fabbricare dispositivi elettronici di memoria non volatile integrati su un substrato semiconduttore comprendente una fase di deposizione di dielettrico premetal migliorata |
| US7679130B2 (en) | 2005-05-10 | 2010-03-16 | Infineon Technologies Ag | Deep trench isolation structures and methods of formation thereof |
| US7495279B2 (en) * | 2005-09-09 | 2009-02-24 | Infineon Technologies Ag | Embedded flash memory devices on SOI substrates and methods of manufacture thereof |
| US20070133289A1 (en) * | 2005-12-01 | 2007-06-14 | Aplus Flash Technology, Inc. | NAND-type flash memory device with high voltage PMOS and embedded poly and methods of fabricating the same |
| US20080112231A1 (en) * | 2006-11-09 | 2008-05-15 | Danny Pak-Chum Shum | Semiconductor devices and methods of manufacture thereof |
| CN102544004A (zh) * | 2010-12-09 | 2012-07-04 | 和舰科技(苏州)有限公司 | 一种嵌入式闪存及其制造方法 |
| US8916909B2 (en) * | 2012-03-06 | 2014-12-23 | Infineon Technologies Austria Ag | Semiconductor device and method for fabricating a semiconductor device |
| CN108630700A (zh) * | 2017-03-22 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | 闪存器件及其制造方法 |
| US10297602B2 (en) | 2017-05-18 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Implantations for forming source/drain regions of different transistors |
| KR102212751B1 (ko) | 2019-07-26 | 2021-02-04 | 주식회사 키 파운드리 | 비휘발성 메모리 소자 및 그 제조방법 |
| TW202118280A (zh) * | 2019-09-10 | 2021-05-01 | 日商索尼半導體解決方案公司 | 攝像裝置、電子機𠾖及製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US41000A (en) * | 1863-12-22 | Improvement in grain-separators | ||
| US25635A (en) | 1859-10-04 | Accountant label foe peeiodicals | ||
| JPH02260564A (ja) | 1989-03-31 | 1990-10-23 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US5190887A (en) * | 1991-12-30 | 1993-03-02 | Intel Corporation | Method of making electrically erasable and electrically programmable memory cell with extended cycling endurance |
| US5412238A (en) * | 1992-09-08 | 1995-05-02 | National Semiconductor Corporation | Source-coupling, split-gate, virtual ground flash EEPROM array |
| US5313419A (en) | 1993-02-01 | 1994-05-17 | National Semiconductor Corporation | Self-aligned trench isolation scheme for select transistors in an alternate metal virtual ground (AMG) EPROM array |
| JP3532625B2 (ja) * | 1994-10-06 | 2004-05-31 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US5717634A (en) | 1995-07-19 | 1998-02-10 | Texas Instruments Incorporated | Programmable and convertible non-volatile memory array |
| JP3383140B2 (ja) * | 1995-10-02 | 2003-03-04 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
| US5702988A (en) * | 1996-05-02 | 1997-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Blending integrated circuit technology |
| JP3549364B2 (ja) * | 1996-05-30 | 2004-08-04 | ヒュンダイ エレクトロニクス アメリカ | 三重ウェルを有するフラッシュ・メモリ・セルの製造方法 |
| US6043123A (en) * | 1996-05-30 | 2000-03-28 | Hyundai Electronics America, Inc. | Triple well flash memory fabrication process |
| JPH10154802A (ja) * | 1996-11-22 | 1998-06-09 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法 |
| US6096597A (en) | 1997-01-31 | 2000-08-01 | Texas Instruments Incorporated | Method for fabricating an integrated circuit structure |
| US5880991A (en) | 1997-04-14 | 1999-03-09 | International Business Machines Corporation | Structure for low cost mixed memory integration, new NVRAM structure, and process for forming the mixed memory and NVRAM structure |
| TW420874B (en) * | 1998-05-04 | 2001-02-01 | Koninkl Philips Electronics Nv | Method of manufacturing a semiconductor device |
| US6037222A (en) | 1998-05-22 | 2000-03-14 | Taiwan Semiconductor Manufacturing Company | Method for fabricating a dual-gate dielectric module for memory embedded logic using salicide technology and polycide technology |
| US6146970A (en) | 1998-05-26 | 2000-11-14 | Motorola Inc. | Capped shallow trench isolation and method of formation |
| US6074914A (en) | 1998-10-30 | 2000-06-13 | Halo Lsi Design & Device Technology, Inc. | Integration method for sidewall split gate flash transistor |
| JP2000150678A (ja) * | 1998-11-10 | 2000-05-30 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
| TW402793B (en) | 1998-12-15 | 2000-08-21 | United Microelectronics Corp | Flash memory manufacture method |
| TW402743B (en) * | 1999-02-10 | 2000-08-21 | Promos Techvologies Inc | Method for producing metallic polycide gate with amorphous silicon cap layer |
| US6180456B1 (en) | 1999-02-17 | 2001-01-30 | International Business Machines Corporation | Triple polysilicon embedded NVRAM cell and method thereof |
| JP2000243958A (ja) * | 1999-02-24 | 2000-09-08 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2000311992A (ja) * | 1999-04-26 | 2000-11-07 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
| TW415045B (en) | 1999-08-10 | 2000-12-11 | United Microelectronics Corp | Manufacture of embedded flash memory |
| US6284602B1 (en) * | 1999-09-20 | 2001-09-04 | Advanced Micro Devices, Inc. | Process to reduce post cycling program VT dispersion for NAND flash memory devices |
| JP2001094093A (ja) * | 1999-09-20 | 2001-04-06 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6406960B1 (en) | 1999-10-25 | 2002-06-18 | Advanced Micro Devices, Inc. | Process for fabricating an ONO structure having a silicon-rich silicon nitride layer |
| JP2001135804A (ja) * | 1999-11-01 | 2001-05-18 | Denso Corp | 半導体装置 |
| JP3450770B2 (ja) * | 1999-11-29 | 2003-09-29 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US6188045B1 (en) * | 2000-04-03 | 2001-02-13 | Alto-Shaam, Inc. | Combination oven with three-stage water atomizer |
| JP3773425B2 (ja) * | 2000-08-10 | 2006-05-10 | 松下電器産業株式会社 | 半導体記憶装置の製造方法 |
| KR100347145B1 (ko) | 2000-08-29 | 2002-08-03 | 주식회사 하이닉스반도체 | 플래시 셀 배열에서 세그먼트 트랜지스터와 셀 영역의연결방법 |
| JP2002118177A (ja) | 2000-10-11 | 2002-04-19 | Toshiba Corp | 半導体装置及びその製造方法 |
-
2002
- 2002-09-04 US US10/234,344 patent/US6841824B2/en not_active Expired - Lifetime
-
2003
- 2003-08-28 TW TW092123836A patent/TWI231575B/zh not_active IP Right Cessation
- 2003-09-03 WO PCT/EP2003/009779 patent/WO2004023558A2/en not_active Ceased
- 2003-09-03 EP EP03793794A patent/EP1535337B1/en not_active Expired - Lifetime
- 2003-09-03 DE DE60335382T patent/DE60335382D1/de not_active Expired - Lifetime
- 2003-09-03 JP JP2004533457A patent/JP4621023B2/ja not_active Expired - Fee Related
- 2003-09-03 CN CNB038210924A patent/CN100530659C/zh not_active Expired - Fee Related
- 2003-09-03 CN CN2009100054848A patent/CN101483178B/zh not_active Expired - Fee Related
-
2004
- 2004-09-29 US US10/953,949 patent/US7081381B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005537671A (ja) | 2005-12-08 |
| US7081381B2 (en) | 2006-07-25 |
| CN101483178B (zh) | 2011-08-03 |
| US6841824B2 (en) | 2005-01-11 |
| CN1679166A (zh) | 2005-10-05 |
| WO2004023558A2 (en) | 2004-03-18 |
| WO2004023558A3 (en) | 2004-09-02 |
| CN100530659C (zh) | 2009-08-19 |
| TW200409302A (en) | 2004-06-01 |
| EP1535337B1 (en) | 2010-12-15 |
| JP4621023B2 (ja) | 2011-01-26 |
| US20040041205A1 (en) | 2004-03-04 |
| EP1535337A2 (en) | 2005-06-01 |
| CN101483178A (zh) | 2009-07-15 |
| US20050040474A1 (en) | 2005-02-24 |
| DE60335382D1 (de) | 2011-01-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |