JP4346602B2 - リソグラフィ装置及びデバイス製造方法 - Google Patents
リソグラフィ装置及びデバイス製造方法 Download PDFInfo
- Publication number
- JP4346602B2 JP4346602B2 JP2005326781A JP2005326781A JP4346602B2 JP 4346602 B2 JP4346602 B2 JP 4346602B2 JP 2005326781 A JP2005326781 A JP 2005326781A JP 2005326781 A JP2005326781 A JP 2005326781A JP 4346602 B2 JP4346602 B2 JP 4346602B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- space
- plan
- shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 143
- 239000007788 liquid Substances 0.000 claims description 133
- 230000005855 radiation Effects 0.000 claims description 58
- 238000000059 patterning Methods 0.000 claims description 26
- 230000007704 transition Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 238000006073 displacement reaction Methods 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 4
- 238000007654 immersion Methods 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000000671 immersion lithography Methods 0.000 description 3
- 238000004590 computer program Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/986,185 US7423720B2 (en) | 2004-11-12 | 2004-11-12 | Lithographic apparatus and device manufacturing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009048424A Division JP4959737B2 (ja) | 2004-11-12 | 2009-03-02 | リソグラフィ装置及びデバイス製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006140494A JP2006140494A (ja) | 2006-06-01 |
| JP4346602B2 true JP4346602B2 (ja) | 2009-10-21 |
Family
ID=36385903
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005326781A Expired - Fee Related JP4346602B2 (ja) | 2004-11-12 | 2005-11-11 | リソグラフィ装置及びデバイス製造方法 |
| JP2009048424A Expired - Lifetime JP4959737B2 (ja) | 2004-11-12 | 2009-03-02 | リソグラフィ装置及びデバイス製造方法 |
| JP2011220594A Expired - Fee Related JP5193350B2 (ja) | 2004-11-12 | 2011-10-05 | リソグラフィ投影装置及びデバイス製造方法 |
| JP2011220593A Expired - Fee Related JP5193349B2 (ja) | 2004-11-12 | 2011-10-05 | リソグラフィ投影装置及びデバイス製造方法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009048424A Expired - Lifetime JP4959737B2 (ja) | 2004-11-12 | 2009-03-02 | リソグラフィ装置及びデバイス製造方法 |
| JP2011220594A Expired - Fee Related JP5193350B2 (ja) | 2004-11-12 | 2011-10-05 | リソグラフィ投影装置及びデバイス製造方法 |
| JP2011220593A Expired - Fee Related JP5193349B2 (ja) | 2004-11-12 | 2011-10-05 | リソグラフィ投影装置及びデバイス製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (9) | US7423720B2 (enExample) |
| JP (4) | JP4346602B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009117879A (ja) * | 2004-11-12 | 2009-05-28 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2006118258A1 (ja) * | 2005-04-28 | 2006-11-09 | Nikon Corporation | 露光方法及び露光装置、並びにデバイス製造方法 |
| US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101762083B1 (ko) * | 2005-05-12 | 2017-07-26 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
| US8634053B2 (en) * | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| NL1036253A1 (nl) * | 2007-12-10 | 2009-06-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| JP2009188241A (ja) * | 2008-02-07 | 2009-08-20 | Toshiba Corp | 液浸露光装置及び液浸露光方法 |
| US8421993B2 (en) * | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
| ATE548679T1 (de) * | 2008-05-08 | 2012-03-15 | Asml Netherlands Bv | Lithografische immersionsvorrichtung, trocknungsvorrichtung, immersionsmetrologievorrichtung und verfahren zur herstellung einer vorrichtung |
| EP2131241B1 (en) * | 2008-05-08 | 2019-07-31 | ASML Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
| NL2004102A (en) * | 2009-02-25 | 2010-08-26 | Asml Holding Nv | A fluid handling device, an immersion lithographic apparatus and a device manufacturing method. |
| EP2256553B1 (en) * | 2009-05-26 | 2016-05-25 | ASML Netherlands B.V. | Fluid handling structure and lithographic apparatus |
| US20120162619A1 (en) * | 2010-12-27 | 2012-06-28 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, exposing method, device fabricating method, program, and storage medium |
| US9323160B2 (en) | 2012-04-10 | 2016-04-26 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
| US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
Family Cites Families (112)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE221563C (enExample) | ||||
| DE206607C (enExample) | ||||
| DE224448C (enExample) | ||||
| DE242880C (enExample) | ||||
| GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
| US3573975A (en) | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
| DE2963537D1 (en) | 1979-07-27 | 1982-10-07 | Tabarelli Werner W | Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer |
| FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
| JPS5754317A (en) | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
| US4390273A (en) | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
| DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
| DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
| DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
| DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
| JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
| JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
| JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
| US5040020A (en) | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
| JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
| JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
| JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
| JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| US6104687A (en) | 1996-08-26 | 2000-08-15 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
| US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
| JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
| JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| EP1039511A4 (en) | 1997-12-12 | 2005-03-02 | Nikon Corp | PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS |
| AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| TWI242111B (en) | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
| JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
| JP2001272604A (ja) | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
| WO2001099168A1 (fr) * | 2000-06-23 | 2001-12-27 | Fujitsu Limited | Dispositif a semi-conducteur et procede de fabrication associe |
| TW591653B (en) | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
| KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
| WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
| US6600547B2 (en) | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
| WO2003040830A2 (en) | 2001-11-07 | 2003-05-15 | Applied Materials, Inc. | Optical spot grid array printer |
| DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
| DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| TWI249082B (en) | 2002-08-23 | 2006-02-11 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
| US7367345B1 (en) * | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
| US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR100588124B1 (ko) | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
| SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE60319658T2 (de) | 2002-11-29 | 2009-04-02 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
| DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| WO2004053951A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光方法及び露光装置並びにデバイス製造方法 |
| DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
| EP1571697A4 (en) | 2002-12-10 | 2007-07-04 | Nikon Corp | EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD |
| KR20050085026A (ko) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 광학 소자 및 그 광학 소자를 사용한 투영 노광 장치 |
| EP1571701A4 (en) | 2002-12-10 | 2008-04-09 | Nikon Corp | EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS |
| SG158745A1 (en) | 2002-12-10 | 2010-02-26 | Nikon Corp | Exposure apparatus and method for producing device |
| CN100429748C (zh) | 2002-12-10 | 2008-10-29 | 株式会社尼康 | 曝光装置和器件制造方法 |
| WO2004053952A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
| WO2004053957A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 面位置検出装置、露光方法、及びデバイス製造方法 |
| EP1429190B1 (en) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
| KR101036114B1 (ko) | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
| DE60326384D1 (de) * | 2002-12-13 | 2009-04-09 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
| ATE335272T1 (de) * | 2002-12-19 | 2006-08-15 | Koninkl Philips Electronics Nv | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
| AU2003295177A1 (en) * | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
| US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
| JP4352930B2 (ja) | 2003-02-26 | 2009-10-28 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| JP4604452B2 (ja) | 2003-02-26 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| JP4488004B2 (ja) | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
| CN1771463A (zh) * | 2003-04-10 | 2006-05-10 | 株式会社尼康 | 用于沉浸光刻装置收集液体的溢出通道 |
| CN101061429B (zh) | 2003-04-10 | 2015-02-04 | 株式会社尼康 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| KR101323993B1 (ko) | 2003-04-10 | 2013-10-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| WO2004092830A2 (en) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| JP2004356205A (ja) * | 2003-05-27 | 2004-12-16 | Tadahiro Omi | スキャン型露光装置および露光方法 |
| JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| KR101209540B1 (ko) * | 2003-07-09 | 2012-12-07 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| KR20170070264A (ko) * | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2005183744A (ja) | 2003-12-22 | 2005-07-07 | Nikon Corp | 露光装置及びデバイス製造方法 |
| US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
| ATE467902T1 (de) * | 2004-01-05 | 2010-05-15 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
| US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
| EP1706793B1 (en) * | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Exposure apparatus and measuring device for a projection lens |
| JP4622340B2 (ja) * | 2004-03-04 | 2011-02-02 | 株式会社ニコン | 露光装置、デバイス製造方法 |
| JP4655763B2 (ja) * | 2004-06-04 | 2011-03-23 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| JP4517341B2 (ja) * | 2004-06-04 | 2010-08-04 | 株式会社ニコン | 露光装置、ノズル部材、及びデバイス製造方法 |
| US8373843B2 (en) * | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US8717533B2 (en) * | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| JP4543767B2 (ja) * | 2004-06-10 | 2010-09-15 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US20070139628A1 (en) * | 2004-06-10 | 2007-06-21 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| JP4515335B2 (ja) | 2004-06-10 | 2010-07-28 | 株式会社ニコン | 露光装置、ノズル部材、及びデバイス製造方法 |
| US7124036B2 (en) * | 2004-06-25 | 2006-10-17 | Underground Utility Services, Inc. | Method and system for determining demand in a water distribution system |
| JP2006060016A (ja) * | 2004-08-20 | 2006-03-02 | Canon Inc | 流体給排装置及びそれを有する露光装置 |
| US7423720B2 (en) * | 2004-11-12 | 2008-09-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4164508B2 (ja) | 2005-10-04 | 2008-10-15 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
-
2004
- 2004-11-12 US US10/986,185 patent/US7423720B2/en active Active
-
2005
- 2005-11-11 JP JP2005326781A patent/JP4346602B2/ja not_active Expired - Fee Related
-
2008
- 2008-06-19 US US12/213,426 patent/US7710537B2/en not_active Expired - Lifetime
-
2009
- 2009-03-02 JP JP2009048424A patent/JP4959737B2/ja not_active Expired - Lifetime
-
2010
- 2010-03-17 US US12/725,883 patent/US8817231B2/en not_active Expired - Fee Related
-
2011
- 2011-10-05 JP JP2011220594A patent/JP5193350B2/ja not_active Expired - Fee Related
- 2011-10-05 JP JP2011220593A patent/JP5193349B2/ja not_active Expired - Fee Related
-
2014
- 2014-07-28 US US14/444,833 patent/US9261797B2/en not_active Expired - Fee Related
-
2016
- 2016-01-12 US US14/993,810 patent/US9645507B2/en not_active Expired - Fee Related
-
2017
- 2017-04-14 US US15/488,191 patent/US9798247B2/en not_active Expired - Lifetime
- 2017-10-23 US US15/791,317 patent/US9964861B2/en not_active Expired - Fee Related
-
2018
- 2018-05-04 US US15/971,065 patent/US10274832B2/en not_active Expired - Fee Related
-
2019
- 2019-04-30 US US16/398,767 patent/US10620546B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009117879A (ja) * | 2004-11-12 | 2009-05-28 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9798247B2 (en) | 2017-10-24 |
| US9261797B2 (en) | 2016-02-16 |
| US20160124321A1 (en) | 2016-05-05 |
| JP5193350B2 (ja) | 2013-05-08 |
| US10274832B2 (en) | 2019-04-30 |
| US20080259294A1 (en) | 2008-10-23 |
| JP4959737B2 (ja) | 2012-06-27 |
| US20180046090A1 (en) | 2018-02-15 |
| US7423720B2 (en) | 2008-09-09 |
| JP2012015549A (ja) | 2012-01-19 |
| US20060103821A1 (en) | 2006-05-18 |
| US8817231B2 (en) | 2014-08-26 |
| US7710537B2 (en) | 2010-05-04 |
| US20140335457A1 (en) | 2014-11-13 |
| US20100177292A1 (en) | 2010-07-15 |
| US20170219938A1 (en) | 2017-08-03 |
| US9964861B2 (en) | 2018-05-08 |
| US9645507B2 (en) | 2017-05-09 |
| JP2012039137A (ja) | 2012-02-23 |
| JP2006140494A (ja) | 2006-06-01 |
| US10620546B2 (en) | 2020-04-14 |
| JP2009117879A (ja) | 2009-05-28 |
| JP5193349B2 (ja) | 2013-05-08 |
| US20190258174A1 (en) | 2019-08-22 |
| US20180356735A1 (en) | 2018-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5193349B2 (ja) | リソグラフィ投影装置及びデバイス製造方法 | |
| JP5344691B2 (ja) | リソグラフィ投影装置およびデバイス製造方法 | |
| JP4342412B2 (ja) | リソグラフィック装置及びデバイス製造方法 | |
| JP5194050B2 (ja) | リソグラフィ装置 | |
| JP4820809B2 (ja) | リソグラフィ装置およびデバイス製造方法 | |
| JP4728382B2 (ja) | リソグラフィ装置及びデバイス製造方法 | |
| JP2009094529A (ja) | リソグラフィ装置およびデバイス製造方法 | |
| JP4777933B2 (ja) | リソグラフィ装置およびデバイス製造方法 | |
| CN1971429B (zh) | 光刻设备 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20060904 |
|
| RD05 | Notification of revocation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7425 Effective date: 20070529 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081128 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081202 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090302 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090324 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090617 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090707 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090714 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4346602 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120724 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130724 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |