JP4094780B2 - 結晶成長方法および結晶成長装置並びにｉｉｉ族窒化物結晶の製造方法および結晶製造装置 - Google Patents

結晶成長方法および結晶成長装置並びにｉｉｉ族窒化物結晶の製造方法および結晶製造装置 Download PDF

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JP4094780B2
JP4094780B2 JP23719599A JP23719599A JP4094780B2 JP 4094780 B2 JP4094780 B2 JP 4094780B2 JP 23719599 A JP23719599 A JP 23719599A JP 23719599 A JP23719599 A JP 23719599A JP 4094780 B2 JP4094780 B2 JP 4094780B2
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crystal
group iii
iii nitride
melt
flux
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JP2001064098A (ja
JP2001064098A5 (enExample
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正二 皿山
浩和 岩田
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Ricoh Co Ltd
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Ricoh Co Ltd
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Priority to US10/601,301 priority patent/US7250640B2/en
Priority to US11/408,656 priority patent/US7508003B2/en
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Priority to US12/367,013 priority patent/US8591647B2/en
Priority to US14/057,690 priority patent/US20140044970A1/en
Priority to US14/619,237 priority patent/US9869033B2/en
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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP23719599A 1999-06-09 1999-08-24 結晶成長方法および結晶成長装置並びにｉｉｉ族窒化物結晶の製造方法および結晶製造装置 Expired - Lifetime JP4094780B2 (ja)

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JP23719599A JP4094780B2 (ja) 1999-08-24 1999-08-24 結晶成長方法および結晶成長装置並びにｉｉｉ族窒化物結晶の製造方法および結晶製造装置
US09/590,063 US6592663B1 (en) 1999-06-09 2000-06-08 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
US10/601,301 US7250640B2 (en) 1999-06-09 2003-06-13 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
US11/408,656 US7508003B2 (en) 1999-06-09 2006-04-20 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
US12/367,013 US8591647B2 (en) 1999-06-09 2009-02-06 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
US14/057,690 US20140044970A1 (en) 1999-06-09 2013-10-18 PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE
US14/619,237 US9869033B2 (en) 1999-06-09 2015-02-11 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate

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JP23719599A JP4094780B2 (ja) 1999-08-24 1999-08-24 結晶成長方法および結晶成長装置並びにｉｉｉ族窒化物結晶の製造方法および結晶製造装置

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JP2007022916A Division JP2007191390A (ja) 2007-02-01 2007-02-01 Ｉｉｉ族窒化物結晶およびｉｉｉ族窒化物結晶基板

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JP2001064098A5 JP2001064098A5 (enExample) 2006-06-22
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013129598A (ja) * 2013-03-22 2013-07-04 Ricoh Co Ltd Ｉｉｉ族窒化物結晶の製造方法

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US7001457B2 (en) 2001-05-01 2006-02-21 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US7220311B2 (en) 2002-11-08 2007-05-22 Ricoh Company, Ltd. Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
JP4508613B2 (ja) * 2002-11-26 2010-07-21 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
US7261775B2 (en) 2003-01-29 2007-08-28 Ricoh Company, Ltd. Methods of growing a group III nitride crystal
JP4534631B2 (ja) 2003-10-31 2010-09-01 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
JP5299213B2 (ja) * 2003-10-31 2013-09-25 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
JP2005194146A (ja) * 2004-01-08 2005-07-21 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法
JP4562398B2 (ja) * 2004-01-26 2010-10-13 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4661069B2 (ja) * 2004-03-26 2011-03-30 三菱化学株式会社 周期表第１３族金属窒化物結晶の製造方法
US7794539B2 (en) * 2004-03-31 2010-09-14 Panasonic Corporation Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
KR101077323B1 (ko) 2004-07-07 2011-10-26 스미토모덴키고교가부시키가이샤 질화물단결정 및 그 제조방법
JP4722471B2 (ja) * 2004-12-15 2011-07-13 株式会社リコー Ｉｉｉ族窒化物結晶製造方法およびｉｉｉ族窒化物結晶成長装置
JP4615327B2 (ja) * 2005-02-03 2011-01-19 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4603498B2 (ja) 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
JP5046490B2 (ja) * 2005-03-25 2012-10-10 日本碍子株式会社 単結晶育成用の反応容器および単結晶の育成方法
JP4640943B2 (ja) * 2005-03-28 2011-03-02 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
TW200706710A (en) 2005-05-12 2007-02-16 Ricoh Co Ltd Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal
JP4732146B2 (ja) * 2005-11-21 2011-07-27 株式会社リコー 結晶成長装置および製造方法
EP1775356A3 (en) 2005-10-14 2009-12-16 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
JP4690849B2 (ja) * 2005-10-14 2011-06-01 株式会社リコー 結晶成長装置および製造方法
JP4856934B2 (ja) 2005-11-21 2012-01-18 株式会社リコー ＧａＮ結晶
US20070215034A1 (en) 2006-03-14 2007-09-20 Hirokazu Iwata Crystal preparing device, crystal preparing method, and crystal
JP5053555B2 (ja) * 2006-03-22 2012-10-17 株式会社リコー 結晶製造装置および製造方法
WO2007122867A1 (ja) 2006-03-24 2007-11-01 Ngk Insulators, Ltd. 窒化物単結晶の製造方法および装置
JP4921855B2 (ja) * 2006-06-02 2012-04-25 株式会社リコー 製造方法
JP4848243B2 (ja) * 2006-10-13 2011-12-28 株式会社リコー 結晶製造装置
JP4880499B2 (ja) * 2007-03-08 2012-02-22 株式会社リコー 結晶製造装置
US7708833B2 (en) 2007-03-13 2010-05-04 Toyoda Gosei Co., Ltd. Crystal growing apparatus
JP4926996B2 (ja) * 2007-03-13 2012-05-09 豊田合成株式会社 結晶成長装置
EP2261401A4 (en) 2008-03-03 2012-11-28 Mitsubishi Chem Corp NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING THE SAME
JP5115413B2 (ja) * 2008-09-09 2013-01-09 トヨタ自動車株式会社 炭化珪素単結晶の製造装置および製造方法
JP4956515B2 (ja) * 2008-09-26 2012-06-20 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法
JP5093924B2 (ja) * 2009-01-09 2012-12-12 住友電気工業株式会社 種結晶表面のエッチング方法
CN102906315B (zh) 2010-05-31 2015-06-24 国际商业机器公司 制造单晶片
US20130015560A1 (en) * 2011-07-13 2013-01-17 The Regents Of The University Of California Growth of bulk group-iii nitride crystals after coating them with a group-iii metal and an alkali metal
JP5589997B2 (ja) * 2011-09-12 2014-09-17 株式会社リコー 結晶製造装置
CN115819791A (zh) * 2022-12-16 2023-03-21 烟台大学 一种通过控制保护气压力调控mof形貌的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013129598A (ja) * 2013-03-22 2013-07-04 Ricoh Co Ltd Ｉｉｉ族窒化物結晶の製造方法

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