JP2806326B2 - 不揮発性半導体記憶装置の書込み・消去方法 - Google Patents

不揮発性半導体記憶装置の書込み・消去方法

Info

Publication number
JP2806326B2
JP2806326B2 JP27488695A JP27488695A JP2806326B2 JP 2806326 B2 JP2806326 B2 JP 2806326B2 JP 27488695 A JP27488695 A JP 27488695A JP 27488695 A JP27488695 A JP 27488695A JP 2806326 B2 JP2806326 B2 JP 2806326B2
Authority
JP
Japan
Prior art keywords
writing
semiconductor memory
time
memory device
nonvolatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP27488695A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0991979A (ja
Inventor
敏哉 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP27488695A priority Critical patent/JP2806326B2/ja
Priority to US08/719,980 priority patent/US5708605A/en
Priority to TW085111729A priority patent/TW307012B/zh
Priority to KR1019960042329A priority patent/KR100215351B1/ko
Publication of JPH0991979A publication Critical patent/JPH0991979A/ja
Application granted granted Critical
Publication of JP2806326B2 publication Critical patent/JP2806326B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP27488695A 1995-09-27 1995-09-27 不揮発性半導体記憶装置の書込み・消去方法 Expired - Lifetime JP2806326B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP27488695A JP2806326B2 (ja) 1995-09-27 1995-09-27 不揮発性半導体記憶装置の書込み・消去方法
US08/719,980 US5708605A (en) 1995-09-27 1996-09-24 Nonvolatile semiconductor memory device having variable writing and erasing time periods
TW085111729A TW307012B (enExample) 1995-09-27 1996-09-25
KR1019960042329A KR100215351B1 (ko) 1995-09-27 1996-09-25 가변 기록 및 소거 시간 주기를 갖는 비휘발성 반도체 메모리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27488695A JP2806326B2 (ja) 1995-09-27 1995-09-27 不揮発性半導体記憶装置の書込み・消去方法

Publications (2)

Publication Number Publication Date
JPH0991979A JPH0991979A (ja) 1997-04-04
JP2806326B2 true JP2806326B2 (ja) 1998-09-30

Family

ID=17547914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27488695A Expired - Lifetime JP2806326B2 (ja) 1995-09-27 1995-09-27 不揮発性半導体記憶装置の書込み・消去方法

Country Status (4)

Country Link
US (1) US5708605A (enExample)
JP (1) JP2806326B2 (enExample)
KR (1) KR100215351B1 (enExample)
TW (1) TW307012B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3093649B2 (ja) * 1996-09-05 2000-10-03 九州日本電気株式会社 不揮発性半導体メモリ装置
US6081453A (en) * 1997-04-15 2000-06-27 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP3098486B2 (ja) * 1998-03-31 2000-10-16 山形日本電気株式会社 不揮発性半導体記憶装置
US6005810A (en) * 1998-08-10 1999-12-21 Integrated Silicon Solution, Inc. Byte-programmable flash memory having counters and secondary storage for disturb control during program and erase operations
US6141260A (en) * 1998-08-27 2000-10-31 Micron Technology, Inc. Single electron resistor memory device and method for use thereof
TW439029B (en) * 1998-11-27 2001-06-07 Acer Peripherals Inc Method for preventing flash memory data from being lost or miswritten
KR100311042B1 (ko) * 1999-06-26 2001-11-02 윤종용 기입 주기의 프로그래밍이 가능한 동기식 메모리 장치 및 이를 이용한 데이터 기입 방법
TWI220031B (en) * 2003-07-01 2004-08-01 Delta Electronics Inc Method and apparatus for time-relevant accessing a non-volatile memory in an electrical equipment
US7120220B2 (en) 2004-12-23 2006-10-10 Ramtron International Corporation Non-volatile counter
US7142627B2 (en) 2004-12-23 2006-11-28 Ramtron International Corporation Counting scheme with automatic point-of-reference generation
US7257046B2 (en) * 2005-06-13 2007-08-14 Atmel Corporation Memory data access scheme
US9594679B2 (en) * 2008-05-01 2017-03-14 Sandisk Il Ltd. Flash cache flushing method and system
KR101075504B1 (ko) * 2009-01-29 2011-10-21 주식회사 하이닉스반도체 불휘발성 메모리 소자의 소거 동작 방법
US8004884B2 (en) * 2009-07-31 2011-08-23 International Business Machines Corporation Iterative write pausing techniques to improve read latency of memory systems
US9293194B2 (en) 2011-01-27 2016-03-22 Apple Inc. Programming and erasure schemes for analog memory cells
US9009547B2 (en) 2011-01-27 2015-04-14 Apple Inc. Advanced programming verification schemes for analog memory cells
JP5404670B2 (ja) 2011-02-10 2014-02-05 株式会社東芝 不揮発性半導体記憶装置
US8374040B2 (en) 2011-02-25 2013-02-12 International Business Machines Corporation Write bandwidth in a memory characterized by a variable write time

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03250496A (ja) * 1990-02-27 1991-11-08 Nec Corp 電気的書込み消去可能な不揮発性半導体記憶装置
JP3248928B2 (ja) * 1991-08-23 2002-01-21 富士通株式会社 不揮発性半導体記憶装置およびデータ消去方法
JPH0581881A (ja) * 1991-09-20 1993-04-02 Mitsubishi Electric Corp 半導体記憶装置
JP3348466B2 (ja) * 1992-06-09 2002-11-20 セイコーエプソン株式会社 不揮発性半導体装置
JPH06251593A (ja) * 1993-02-24 1994-09-09 Matsushita Electron Corp フラッシュメモリの消去あるいは書き込み制御方法
US5463586A (en) * 1993-05-28 1995-10-31 Macronix International Co., Ltd. Erase and program verification circuit for non-volatile memory
JPH0737395A (ja) * 1993-07-19 1995-02-07 Sony Corp 不揮発性半導体記憶装置
JP3448365B2 (ja) * 1994-09-20 2003-09-22 三菱電機株式会社 不揮発性半導体記憶装置
US5621687A (en) * 1995-05-31 1997-04-15 Intel Corporation Programmable erasure and programming time for a flash memory

Also Published As

Publication number Publication date
US5708605A (en) 1998-01-13
JPH0991979A (ja) 1997-04-04
KR970017665A (ko) 1997-04-30
KR100215351B1 (ko) 1999-08-16
TW307012B (enExample) 1997-06-01

Similar Documents

Publication Publication Date Title
JP2806326B2 (ja) 不揮発性半導体記憶装置の書込み・消去方法
KR100489421B1 (ko) 플래시 ｅｅｐｒｏｍ의 프로그래밍 및 과다-소거 보정모드에서 비트라인 누설 전류를 억제하기위한 회로 적용
US6304486B1 (en) Sensing time control device and method
JP3943526B2 (ja) 不揮発性半導体記憶装置
KR100976696B1 (ko) 불휘발성 메모리 장치의 프로그램 방법
US5978273A (en) Non-volatile semiconductor memory device
US20020057599A1 (en) Nonvolatile semiconductor memory device having reduced erase time and method of erasing data of the same
JP3080744B2 (ja) 電気的に書き込み一括消去可能な不揮発性半導体記憶装置
JP2982676B2 (ja) 不揮発性半導体記憶装置の過消去救済方法
KR100291807B1 (ko) 비휘발성 기억소자 및 그 제어방법
JPH0464996A (ja) 不揮発性半導体記憶装置
US5930173A (en) Non-volatile semiconductor memory device having trapped charges pulled out
US8339866B2 (en) Semiconductor memory device
JP3143161B2 (ja) 不揮発性半導体メモリ
JP3796851B2 (ja) 不揮発性半導体記憶装置
JPH043395A (ja) 不揮発性半導体記憶装置
JP4052857B2 (ja) 不揮発性半導体メモリアレイ及び該メモリアレイリード方法
JPH1145588A (ja) 不揮発性半導体記憶装置
JPH08203286A (ja) 不揮発性半導体記憶装置
JP2007102923A (ja) 不揮発性半導体記憶装置およびそのデータ消去方法
JP2693912B2 (ja) 不揮発性メモリ及びその消去方法
JP2002197880A (ja) 不揮発性半導体記憶装置
JP4170261B2 (ja) 不揮発性半導体記憶装置及びそのデータ書込み若しくは消去方法
JPH0142080B2 (enExample)
JP3181708B2 (ja) 不揮発性半導体記憶装置の動作方法

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 19980623