JP2023033351A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2023033351A JP2023033351A JP2022211272A JP2022211272A JP2023033351A JP 2023033351 A JP2023033351 A JP 2023033351A JP 2022211272 A JP2022211272 A JP 2022211272A JP 2022211272 A JP2022211272 A JP 2022211272A JP 2023033351 A JP2023033351 A JP 2023033351A
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Abstract
Description
<第1実施形態>
図1は、本発明の第1実施形態に係る半導体装置1を下面側から見た斜視図である。図2は、図1に示されるII-II線に沿う縦断面図である。図3は、図1に示されるIII-III線に沿う横断面図である。図4は、図2に示される破線IVにより囲まれた領域の拡大断面図である。図5は、図2に示される破線Vにより囲まれた領域の拡大断面図である。
図8は、本発明の第2実施形態に係る半導体装置61を下面側から見た斜視図である。図9は、図8に示されるIX-IX線に沿う縦断面図である。図8および図9において、前述の第1実施形態において述べた構成と同様の構成については、同一の参照符号を付して説明を省略する。
図10は、本発明の第3実施形態に係る半導体装置71を下面側から見た斜視図である。図11は、図10に示されるXI-XI線に沿う縦断面図である。図12は、図11に示される破線XIIにより囲まれた領域の拡大断面図である。
図14は、本発明の第4実施形態に係る半導体装置101を上面側から見た斜視図である。図15は、図14に示される半導体装置101の電気的構造を示す模式的な回路図である。
図16は、本発明の第5実施形態に係る半導体装置111を上面側から見た斜視図である。図17は、図16に示される半導体装置111の電気的構造を示す模式的な回路図である。
Claims (8)
- 複数のリードと、複数のリード上に載置された半導体チップと、これらを封止する封止樹脂とを含み、封止樹脂によって、扁平な直方体形状の半導体パッケージ本体が形成されている半導体装置であって、
前記複数のリードは、水平方向に一定の間隔を空けて並列に配置されており、
前記複数のリードは、それぞれ、リード本体部と、リード本体部の一端部の下面から下方に突出する基部と、基部の下面全域に形成されためっき層とを有し、
前記封止樹脂は、前記複数のリードの下方側および並列に配置された各リード間に位置する側方側を封止する第1封止樹脂と、前記複数のリードの上方側および前記半導体チップを封止する第2封止樹脂とを含み、前記第1封止樹脂の側面および前記第2封止樹脂の側面は面一に形成されており、
前記第1封止樹脂の上面および前記第2封止樹脂の下面の境界部は、前記半導体チップの下方に臨む第1主面と前記リード本体部の下面との間の厚さの範囲内に形成されており、
前記第1封止樹脂は、各前記リード本体部の下面並びに各前記基部およびめっき層によって区画される空間を封止しており、
各前記基部およびめっき層の前記第1封止樹脂によって封止された側と反対側に位置する側面は、前記第1封止樹脂の前記側面と面一に形成され、外部接続される外部端子として露出しており、
前記基部の下面全域に形成されためっき層の下面は、前記第1封止樹脂の下面と面一に形成され、外部接続される外部端子として露出している、半導体装置。 - 前記境界部は、前記複数のリードの各前記リード本体部の上面と同一平面上に位置している、請求項1に記載の半導体装置。
- 前記複数のリードは、各前記リード本体部の他端側が前記半導体装置の内側へ延びており、上面に前記半導体チップが載置されるマウント部を有している、請求項1または2に記載の半導体装置。
- 前記複数のリードは、前記マウント部の他端同士が所定の間隔を空けて対向配置された複数のリード対を含む、請求項3に記載の半導体装置。
- 前記第2封止樹脂は、前記第1封止樹脂と同一の樹脂材料により形成されている、請求項1~4のいずれか一項に記載の半導体装置。
- 前記複数のリードは、Cu系の金属薄板からなる、請求項1~5のいずれか一項に記載の半導体装置。
- 前記めっき層は、複数の導電層が積層された積層構造を有する、請求項1~6のいずれか一項に記載の半導体装置。
- 前記めっき層は、前記基部側から順にNi層、Pd層およびAu層を含む、請求項7に記載の半導体装置。
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