JP2022527654A5 - - Google Patents

Info

Publication number
JP2022527654A5
JP2022527654A5 JP2021560519A JP2021560519A JP2022527654A5 JP 2022527654 A5 JP2022527654 A5 JP 2022527654A5 JP 2021560519 A JP2021560519 A JP 2021560519A JP 2021560519 A JP2021560519 A JP 2021560519A JP 2022527654 A5 JP2022527654 A5 JP 2022527654A5
Authority
JP
Japan
Prior art keywords
base
capacitor according
polar
dopant
ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021560519A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022527654A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2020/027100 external-priority patent/WO2020210254A1/en
Publication of JP2022527654A publication Critical patent/JP2022527654A/ja
Publication of JP2022527654A5 publication Critical patent/JP2022527654A5/ja
Pending legal-status Critical Current

Links

JP2021560519A 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス Pending JP2022527654A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962831044P 2019-04-08 2019-04-08
US62/831,044 2019-04-08
PCT/US2020/027100 WO2020210254A1 (en) 2019-04-08 2020-04-07 Doped polar layers and semiconductor device incorporating same

Publications (2)

Publication Number Publication Date
JP2022527654A JP2022527654A (ja) 2022-06-02
JP2022527654A5 true JP2022527654A5 (https=) 2023-04-14

Family

ID=72661937

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2021560519A Pending JP2022527654A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560540A Pending JP2022523266A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560515A Pending JP2022527410A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560514A Pending JP2022523265A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2021560540A Pending JP2022523266A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560515A Pending JP2022527410A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560514A Pending JP2022523265A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス

Country Status (7)

Country Link
US (24) US11469327B2 (https=)
JP (4) JP2022527654A (https=)
KR (4) KR20210149162A (https=)
CN (4) CN113892156A (https=)
DE (4) DE112020001926T5 (https=)
TW (4) TWI859212B (https=)
WO (4) WO2020210263A1 (https=)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11251365B2 (en) 2018-03-30 2022-02-15 Intel Corporation High blocking temperature spin orbit torque electrode
US11257613B2 (en) 2018-03-31 2022-02-22 Intel Corporation Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication
US11575083B2 (en) 2018-04-02 2023-02-07 Intel Corporation Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory
US11502188B2 (en) 2018-06-14 2022-11-15 Intel Corporation Apparatus and method for boosting signal in magnetoelectric spin orbit logic
US11398562B2 (en) 2018-06-14 2022-07-26 Intel Corporation Magnetoelectric spin orbit logic transistor with a spin filter
US11245068B2 (en) 2018-06-14 2022-02-08 Intel Corporation Transition metal dichalcogenide based magnetoelectric memory device
US11393515B2 (en) 2018-06-14 2022-07-19 Intel Corporation Transition metal dichalcogenide based spin orbit torque memory device
US11665975B2 (en) 2018-06-19 2023-05-30 Intel Corporation Spin orbit coupling memory device with top spin orbit coupling electrode and selector
US11374163B2 (en) 2018-06-19 2022-06-28 Intel Corporation Spin orbit memory with multiferroic material
US11476412B2 (en) 2018-06-19 2022-10-18 Intel Corporation Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
US11508903B2 (en) 2018-06-28 2022-11-22 Intel Corporation Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance
US11367749B2 (en) 2018-06-28 2022-06-21 Intel Corporation Spin orbit torque (SOT) memory devices and their methods of fabrication
US11444237B2 (en) 2018-06-29 2022-09-13 Intel Corporation Spin orbit torque (SOT) memory devices and methods of fabrication
US11616192B2 (en) 2018-06-29 2023-03-28 Intel Corporation Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication
US11380838B2 (en) 2018-06-29 2022-07-05 Intel Corporation Magnetic memory devices with layered electrodes and methods of fabrication
US11362263B2 (en) 2018-06-29 2022-06-14 Intel Corporation Spin orbit torque (SOT) memory devices and methods of fabrication
US11411047B2 (en) 2018-09-11 2022-08-09 Intel Corporation Stacked transistor bit-cell for magnetic random access memory
US11411046B2 (en) 2018-09-11 2022-08-09 Intel Corporation Semiconductor device heat extraction by spin thermoelectrics
US11264558B2 (en) 2018-09-11 2022-03-01 Intel Corporation Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy
US11387404B2 (en) 2018-09-13 2022-07-12 Intel Corporation Magnetoelectric spin orbit logic based minority gate
US11411172B2 (en) 2018-09-13 2022-08-09 Intel Corporation Magnetoelectric spin orbit logic based full adder
US11581417B2 (en) 2018-09-13 2023-02-14 Intel Corporation Improper ferroelectric active and passive devices
US11594270B2 (en) 2018-09-25 2023-02-28 Intel Corporation Perpendicular spin injection via spatial modulation of spin orbit coupling
US11476408B2 (en) 2018-09-27 2022-10-18 Intel Corporation Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabrication
US11557717B2 (en) 2018-11-16 2023-01-17 Intel Corporation Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator
US11574666B2 (en) 2019-01-11 2023-02-07 Intel Corporation Spin orbit torque memory devices and methods of fabrication
US11276730B2 (en) 2019-01-11 2022-03-15 Intel Corporation Spin orbit torque memory devices and methods of fabrication
US11594673B2 (en) 2019-03-27 2023-02-28 Intel Corporation Two terminal spin orbit memory devices and methods of fabrication
US11557629B2 (en) 2019-03-27 2023-01-17 Intel Corporation Spin orbit memory devices with reduced magnetic moment and methods of fabrication
KR20210149162A (ko) * 2019-04-08 2021-12-08 케플러 컴퓨팅 인크. 도핑된 극성 층 및 이를 포함하는 반도체 장치
US11063131B2 (en) * 2019-06-13 2021-07-13 Intel Corporation Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering
US11342484B2 (en) 2020-05-11 2022-05-24 Silanna UV Technologies Pte Ltd Metal oxide semiconductor-based light emitting device
US11699765B2 (en) 2020-11-27 2023-07-11 Samsung Electronics Co., Ltd. Semiconductor device
KR102864087B1 (ko) 2021-01-26 2025-09-23 삼성전자주식회사 커패시터 및 이를 포함하는 반도체 장치
US11508755B2 (en) 2021-02-25 2022-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked ferroelectric structure
US12295151B2 (en) * 2021-03-09 2025-05-06 Changxin Memory Technologies, Inc. Semiconductor structure and manufacturing method thereof
DE102021107402B4 (de) * 2021-03-24 2024-10-10 Helmholtz-Zentrum Dresden - Rossendorf E. V. Elektronisches Bauteil, Bauteilanordnung, Funktionsschicht zum Bilden eines elektronischen Bauteils und Verfahren zum Herstellen eines elektronischen Bauteils
CN113421881B (zh) * 2021-05-26 2022-08-19 复旦大学 通过金属扩散调节铁电存储器表面层有效厚度的方法
US12308365B2 (en) 2021-06-21 2025-05-20 Samsung Electronics Co., Ltd. Thin film structure including method of manufacturing
JP7382988B2 (ja) * 2021-06-29 2023-11-17 キヤノンアネルバ株式会社 積層構造体の製造方法
US11832451B1 (en) 2021-08-06 2023-11-28 Kepler Computing Inc. High density ferroelectric random access memory (FeRAM) devices and methods of fabrication
US11825663B2 (en) * 2021-08-17 2023-11-21 Globalfoundries U.S. Inc. Ferroelectric nonvolatile memory device and integration schemes
TWI802971B (zh) * 2021-08-23 2023-05-21 旺宏電子股份有限公司 記憶體晶胞,記憶體裝置之製造方法及其操作方法
US12051474B2 (en) 2021-08-23 2024-07-30 Cornell University Resistive electrodes on ferroelectric devices for linear piezoelectric programming
US12069857B2 (en) 2021-08-23 2024-08-20 Macronix International Co., Ltd. Memory cell, memory device manufacturing method and memory device operation method thereof
US11942133B2 (en) 2021-09-02 2024-03-26 Kepler Computing Inc. Pedestal-based pocket integration process for embedded memory
US12069866B2 (en) 2021-09-02 2024-08-20 Kepler Computing Inc. Pocket integration process for embedded memory
US12525543B1 (en) 2021-10-01 2026-01-13 Kepler Computing Inc. Integration process for fabricating embedded memory
EP4423325A4 (en) 2021-10-27 2025-08-27 Silanna UV Technologies Pte Ltd METHODS AND SYSTEMS FOR HEATING A WIDE BANDGAP SUBSTRATE
KR102883987B1 (ko) 2021-11-09 2025-11-07 삼성전자주식회사 커패시터, 커패시터 제조 방법 및 커패시터를 포함하는 전자 장치
JP7814510B2 (ja) 2021-11-10 2026-02-16 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッド エピタキシャル酸化物材料、構造、及びデバイス
JP7829033B2 (ja) 2021-11-10 2026-03-12 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッド 酸化マグネシウムゲルマニウムを含む超ワイドバンドギャップ半導体デバイス
EP4430674A4 (en) 2021-11-10 2025-10-01 Silanna UV Technologies Pte Ltd EPITAXIAL OXIDE MATERIALS, STRUCTURES AND DEVICES
US12588438B2 (en) 2021-11-25 2026-03-24 Samsung Electronics Co., Ltd. Layer structures including dielectric layer, methods of manufacturing dielectric layer, electronic device including dielectric layer, and electronic apparatus including electronic device
US11961877B1 (en) 2021-12-14 2024-04-16 Kepler Computing Inc. Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures
US11869928B2 (en) 2021-12-14 2024-01-09 Kepler Computing Inc. Dual hydrogen barrier layer for memory devices
JP2023088587A (ja) * 2021-12-15 2023-06-27 キオクシア株式会社 スイッチング素子及び記憶装置
US12094923B2 (en) * 2022-01-31 2024-09-17 Kepler Computing Inc. Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices
CN114988861B (zh) * 2022-06-09 2023-04-07 江西理工大学 六角稀土铁氧化物单相多铁性材料及其制备方法和应用
US12336186B2 (en) * 2022-06-09 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices having ferroelectric tunnel junction structure
US12501631B2 (en) 2022-06-10 2025-12-16 Samsung Electronics Co., Ltd. Capacitor, and device comprising the same, and method of preparing the same
DE102022116981A1 (de) 2022-07-07 2024-01-18 TechIFab GmbH Memristive struktur und memristive vorrichtung
DE102022211354A1 (de) * 2022-10-26 2024-05-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Bauelement mit verbesserter ferroelektrischer Polarisationsumschaltung und Zuverlässigkeit sowie Verfahren zum Herstellen dieses Bauelements
KR20240075486A (ko) 2022-11-22 2024-05-29 삼성전자주식회사 유전체층을 포함하는 전자 소자 및 제조방법

Family Cites Families (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5358927A (en) 1990-05-31 1994-10-25 Bell Communications Research, Inc. Growth of a,b-axis oriented pervoskite thin films
JP3021800B2 (ja) * 1990-07-24 2000-03-15 セイコーエプソン株式会社 半導体装置及びその製造方法
US5168420A (en) 1990-11-20 1992-12-01 Bell Communications Research, Inc. Ferroelectrics epitaxially grown on superconducting substrates
US5169485A (en) 1991-03-07 1992-12-08 Bell Communications Research, Inc. Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element
US5270298A (en) 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5155658A (en) 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
US5955754A (en) 1992-10-23 1999-09-21 Symetrix Corporation Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same
US5248564A (en) 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
JP2651784B2 (ja) * 1993-06-22 1997-09-10 川崎重工業株式会社 超格子構造を有する強誘電体薄膜及び該薄膜を備える赤外線センサ・圧力センサ
JPH07111318A (ja) * 1993-10-12 1995-04-25 Olympus Optical Co Ltd 強誘電体メモリ
US5549977A (en) 1993-11-18 1996-08-27 Lucent Technologies Inc. Article comprising magnetoresistive material
US5479317A (en) 1994-10-05 1995-12-26 Bell Communications Research, Inc. Ferroelectric capacitor heterostructure and method of making same
US5519235A (en) 1994-11-18 1996-05-21 Bell Communications Research, Inc. Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes
US5573979A (en) 1995-02-13 1996-11-12 Texas Instruments Incorporated Sloped storage node for a 3-D dram cell structure
US5625529A (en) * 1995-03-28 1997-04-29 Samsung Electronics Co., Ltd. PZT thin films for ferroelectric capacitor and method for preparing the same
JPH08274195A (ja) * 1995-03-30 1996-10-18 Mitsubishi Chem Corp 強誘電体fet素子
EP0972309A4 (en) 1995-06-28 2000-01-19 Telcordia Tech Inc BARRIER LAYER FOR FERROELECTRIC MEMORY ARRANGEMENT INTEGRATED ON SILICON
US5798903A (en) 1995-12-26 1998-08-25 Bell Communications Research, Inc. Electrode structure for ferroelectric capacitor integrated on silicon
US5777356A (en) * 1996-01-03 1998-07-07 Bell Communications Research, Inc. Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same
JPH09246608A (ja) * 1996-03-11 1997-09-19 Toshiba Corp 電子素子
JPH1027886A (ja) * 1996-07-09 1998-01-27 Hitachi Ltd 高誘電体素子とその製造方法
JPH1093041A (ja) * 1996-09-13 1998-04-10 Toshiba Corp 半導体記憶装置
JP2001504282A (ja) 1997-06-09 2001-03-27 テルコーディア テクノロジーズ インコーポレイテッド 結晶ペロブスカイト強誘電体セルのアニールおよび改良された障壁特性を示すセル
US6115281A (en) 1997-06-09 2000-09-05 Telcordia Technologies, Inc. Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors
JP3305627B2 (ja) 1997-08-06 2002-07-24 富士通株式会社 半導体装置とその製造方法
JPH1154710A (ja) * 1997-08-07 1999-02-26 Sony Corp 誘電体薄膜およびその製造方法ならびにそれを用いたキャパシタ
US20030001189A1 (en) 2000-02-24 2003-01-02 Tetsuo Fujiwara Ferroelectric capacitor and semiconductor device
JP2002525876A (ja) * 1998-09-24 2002-08-13 テルコーディア テクノロジーズ インコーポレイテッド 正方晶度の低い強誘電体薄膜
US6861798B1 (en) 1999-02-26 2005-03-01 Candescent Technologies Corporation Tailored spacer wall coatings for reduced secondary electron emission
US6194754B1 (en) 1999-03-05 2001-02-27 Telcordia Technologies, Inc. Amorphous barrier layer in a ferroelectric memory cell
KR100576355B1 (ko) 1999-08-18 2006-05-03 삼성전자주식회사 2단계 급속 열처리를 이용한 강유전체 메모리 소자의 제조방법
US20020030246A1 (en) 2000-06-28 2002-03-14 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices not lattice matched to the substrate
US6482538B2 (en) 2000-07-24 2002-11-19 Motorola, Inc. Microelectronic piezoelectric structure and method of forming the same
US6518609B1 (en) 2000-08-31 2003-02-11 University Of Maryland Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film
JP2002198324A (ja) 2000-11-22 2002-07-12 Sharp Corp Framおよびdram用途のための高温電極およびバリア構造物
US20020076906A1 (en) 2000-12-18 2002-06-20 Motorola, Inc. Semiconductor structure including a monocrystalline film, device including the structure, and methods of forming the structure and device
US6426536B1 (en) 2001-04-16 2002-07-30 International Business Machines Corporation Double layer perovskite oxide electrodes
JP2002334969A (ja) * 2001-05-07 2002-11-22 Sharp Corp 誘電体記憶素子及びその製造方法
JP4002882B2 (ja) * 2001-06-25 2007-11-07 松下電器産業株式会社 容量素子、半導体記憶装置及びその製造方法
US6730951B2 (en) * 2001-06-25 2004-05-04 Matsushita Electric Industrial Co., Ltd. Capacitor, semiconductor memory device, and method for manufacturing the same
US6844583B2 (en) 2001-06-26 2005-01-18 Samsung Electronics Co., Ltd. Ferroelectric memory devices having expanded plate lines
US6541281B2 (en) 2001-07-16 2003-04-01 Tachyon Semiconductors Corporation Ferroelectric circuit element that can be fabricated at low temperatures and method for making the same
US6664116B2 (en) * 2001-12-12 2003-12-16 Sharp Laboratories Of America, Inc. Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides
US6510073B1 (en) * 2002-01-31 2003-01-21 Sharp Laboratories Of America, Inc. Two transistor ferroelectric non-volatile memory
US20030143853A1 (en) * 2002-01-31 2003-07-31 Celii Francis G. FeRAM capacitor stack etch
US6893912B2 (en) * 2002-10-15 2005-05-17 Macronix International Co., Ltd. Ferroelectric capacitor memory device fabrication method
US7071007B2 (en) * 2002-12-06 2006-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a low voltage drive ferroelectric capacitor
JP3907628B2 (ja) * 2003-02-07 2007-04-18 キヤノン株式会社 圧電アクチュエーターおよびその製造方法ならびに液体吐出ヘッド
US7095067B2 (en) * 2003-05-27 2006-08-22 Lucent Technologies Inc. Oxidation-resistant conducting perovskites
US7250648B2 (en) 2003-09-04 2007-07-31 Intematix Corporation Ferroelectric rare-earth manganese-titanium oxides
KR20060123368A (ko) 2003-12-22 2006-12-01 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 비휘발성 메모리 장치 및 그 제조 방법
US8409879B2 (en) 2004-01-13 2013-04-02 Board Of Regents, University Of Houston Method of using a buffered electric pulse induced resistance device
US7312558B2 (en) 2004-04-02 2007-12-25 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, ink jet head, angular velocity sensor, and ink jet recording apparatus
EP1624479A3 (en) 2004-08-05 2008-07-16 Samsung Electronics Co, Ltd Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same
JP2006176366A (ja) * 2004-12-22 2006-07-06 Fujitsu Ltd 強誘電体材料、その製造方法及び強誘電体メモリ
KR100729231B1 (ko) 2005-08-03 2007-06-15 삼성전자주식회사 강유전체 구조물, 강유전체 구조물의 형성 방법, 강유전체구조물을 구비하는 반도체 장치 및 그 제조 방법
US7696549B2 (en) 2005-08-04 2010-04-13 University Of Maryland Bismuth ferrite films and devices grown on silicon
KR100660550B1 (ko) 2005-09-15 2006-12-22 삼성전자주식회사 강유전체막 및 강유전체 커패시터 형성 방법
US8106375B2 (en) 2005-11-30 2012-01-31 The Trustees Of The University Of Pennsylvania Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator
KR100760632B1 (ko) 2006-03-03 2007-09-20 삼성전자주식회사 커패시터 형성 방법
KR100680144B1 (ko) 2006-04-03 2007-02-08 재단법인서울대학교산학협력재단 다강체 막, 이를 포함하는 구조물, 및 상기 막 및 구조물의제조 방법
US20080107885A1 (en) * 2006-07-12 2008-05-08 Alpay S P High-capacity, low-leakage multilayer dielectric stacks
JP4690985B2 (ja) * 2006-09-25 2011-06-01 株式会社東芝 不揮発性記憶装置およびその製造方法
JP4483849B2 (ja) * 2006-10-04 2010-06-16 Tdk株式会社 強誘電体薄膜
WO2008109564A1 (en) 2007-03-02 2008-09-12 The Regents Of The University Of California Complex oxides useful for thermoelectric energy conversion
JP2008218782A (ja) * 2007-03-06 2008-09-18 Seiko Epson Corp 半導体装置及びその製造方法
KR20090017758A (ko) * 2007-08-16 2009-02-19 삼성전자주식회사 강유전체 커패시터의 형성 방법 및 이를 이용한 반도체장치의 제조 방법
US20090238954A1 (en) * 2008-03-20 2009-09-24 Seigi Suh Large area thin film capacitors on metal foils and methods of manufacturing same
WO2009122497A1 (ja) 2008-03-31 2009-10-08 富士通マイクロエレクトロニクス株式会社 強誘電体メモリとその製造方法、及び強誘電体キャパシタの製造方法
JP5313792B2 (ja) * 2008-07-17 2013-10-09 富士フイルム株式会社 ペロブスカイト型酸化物、酸化物組成物、酸化物体、圧電素子、及び液体吐出装置
US8216858B2 (en) * 2009-02-18 2012-07-10 Canon Kabushiki Kaisha Ferroelectric material, method of producing ferroelectric material, and ferroelectric device
JP2011096818A (ja) 2009-10-29 2011-05-12 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
US9356224B2 (en) 2009-10-30 2016-05-31 The Regents Of The University Of California Thin film bismuth iron oxides useful for piezoelectric devices
US20110308580A1 (en) 2010-01-22 2011-12-22 The Regents Of The University Of California Ferroic materials having domain walls and related devices
JP5616126B2 (ja) 2010-05-27 2014-10-29 富士フイルム株式会社 ペロブスカイト型酸化物、酸化物組成物、酸化物体、圧電素子、及び液体吐出装置
KR102115344B1 (ko) 2010-08-27 2020-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
US8993092B2 (en) 2011-02-18 2015-03-31 Ut-Battelle, Llc Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same
US8753952B2 (en) 2011-09-08 2014-06-17 Texas Instruments Incorporated Integrated circuit with integrated decoupling capacitors
CN104471702B (zh) 2012-06-05 2017-12-29 独立行政法人产业技术综合研究所 半导体铁电存储晶体管及其制造方法
US9064709B2 (en) 2012-09-28 2015-06-23 Intel Corporation High breakdown voltage III-N depletion mode MOS capacitors
WO2014111481A2 (de) 2013-01-16 2014-07-24 Helmholtz-Zentrum Dresden-Rossendorf E.V. Komplementärer widerstandsschalter, kontaktierte polykristalline piezo- oder ferroelektrische dünnschicht, verfahren zum verschlüsseln einer bitfolge
US9231206B2 (en) * 2013-09-13 2016-01-05 Micron Technology, Inc. Methods of forming a ferroelectric memory cell
US9257497B2 (en) * 2013-12-31 2016-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal (MIM) capacitor techniques
US9269785B2 (en) * 2014-01-27 2016-02-23 Globalfoundries Inc. Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device
US10242989B2 (en) * 2014-05-20 2019-03-26 Micron Technology, Inc. Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods
US20160118404A1 (en) 2014-10-09 2016-04-28 Haibing Peng Three-dimensional non-volatile ferroelectric random access memory
DE102014223873B3 (de) * 2014-11-24 2016-02-04 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Verfahren zur Herstellung eines aufgerollten elektrischen oder elektronischen Bauelements
TW201637172A (zh) * 2015-04-14 2016-10-16 國立交通大學 記憶體結構
US9305995B1 (en) 2015-06-01 2016-04-05 Cypress Semiconductor Corporation Methods of fabricating an F-RAM
US9460770B1 (en) 2015-09-01 2016-10-04 Micron Technology, Inc. Methods of operating ferroelectric memory cells, and related ferroelectric memory cells
WO2017081579A1 (en) 2015-11-13 2017-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10396145B2 (en) * 2017-01-12 2019-08-27 Micron Technology, Inc. Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
KR102720238B1 (ko) * 2017-02-23 2024-10-21 에스케이하이닉스 주식회사 강유전성 메모리 장치 및 그 제조 방법
KR20180105530A (ko) 2017-03-15 2018-09-28 에스케이하이닉스 주식회사 강유전성 메모리 소자 및 이를 포함하는 크로스 포인트 어레이 장치
US10319426B2 (en) * 2017-05-09 2019-06-11 Micron Technology, Inc. Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods
US10403631B1 (en) 2018-08-13 2019-09-03 Wuxi Petabyte Technologies Co., Ltd. Three-dimensional ferroelectric memory devices
US10777250B2 (en) * 2018-09-27 2020-09-15 Intel Corporation Save-restore circuitry with metal-ferroelectric-metal devices
US11482529B2 (en) 2019-02-27 2022-10-25 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
KR20210149162A (ko) 2019-04-08 2021-12-08 케플러 컴퓨팅 인크. 도핑된 극성 층 및 이를 포함하는 반도체 장치

Similar Documents

Publication Publication Date Title
JP2022527654A5 (https=)
JP2022527410A5 (https=)
US12369351B2 (en) Doped polar layers and semiconductor device incorporating same
JP2022523265A5 (https=)
JP2022523266A5 (https=)
JPWO2004061881A1 (ja) 薄膜コンデンサおよびその製造方法
EP1035590A2 (en) Nonvolatile ferroelectric capacitor and nonvolatile ferroelectric memory
JPWO2004077562A1 (ja) 電極層および誘電体層を含む積層体ユニット
US20220123102A1 (en) Dielectric material and device and memory device comprising the same
JPWO2004077565A1 (ja) 薄膜容量素子ならびにそれを含んだ電子回路および電子機器
JP2500611B2 (ja) 高誘電率薄膜
JP3625417B2 (ja) キャパシタ及びこれを用いた半導体装置
JP3683250B2 (ja) 強誘電体容量素子
US6734456B2 (en) Ferroelectric film and semiconductor device
JP3480767B2 (ja) 薄膜キャパシタ
JPWO2004077561A1 (ja) 電極層および誘電体層を含む積層体ユニット
US7307304B2 (en) Ferroelectric materials and ferroelectric memory device made therefrom
KR20030068431A (ko) 강유전체 용량소자
JPWO2004077563A1 (ja) 電極層および誘電体層を含む積層体ユニット
Shi et al. Structure and electrical properties of La and Nb co-modified Sr0. 8Bi2. 2Ta2O9 thin films
CN120568772A (zh) 一种氧化铪基薄膜中的超晶格铁电增强结构、制备方法及其应用
JP2006196828A (ja) 酸化物薄膜素子
JP2001284542A (ja) 強誘電体メモリ素子
Adachi Rhombohedral PZT thin films prepared by sputtering