DE112020001926T5 - Dotierte polare Schichten und Halbleitervorrichtung enthaltend dieselben - Google Patents
Dotierte polare Schichten und Halbleitervorrichtung enthaltend dieselben Download PDFInfo
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- DE112020001926T5 DE112020001926T5 DE112020001926.8T DE112020001926T DE112020001926T5 DE 112020001926 T5 DE112020001926 T5 DE 112020001926T5 DE 112020001926 T DE112020001926 T DE 112020001926T DE 112020001926 T5 DE112020001926 T5 DE 112020001926T5
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- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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| US201962831044P | 2019-04-08 | 2019-04-08 | |
| US62/831,044 | 2019-04-08 | ||
| PCT/US2020/027100 WO2020210254A1 (en) | 2019-04-08 | 2020-04-07 | Doped polar layers and semiconductor device incorporating same |
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| DE112020001796.6T Pending DE112020001796T5 (de) | 2019-04-08 | 2020-04-07 | Dotierte polare Schichten und Halbleitervorrichtung enthaltend dieselben |
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| DE112020001796.6T Pending DE112020001796T5 (de) | 2019-04-08 | 2020-04-07 | Dotierte polare Schichten und Halbleitervorrichtung enthaltend dieselben |
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