JP7382988B2 - 積層構造体の製造方法 - Google Patents
積層構造体の製造方法 Download PDFInfo
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- JP7382988B2 JP7382988B2 JP2021107796A JP2021107796A JP7382988B2 JP 7382988 B2 JP7382988 B2 JP 7382988B2 JP 2021107796 A JP2021107796 A JP 2021107796A JP 2021107796 A JP2021107796 A JP 2021107796A JP 7382988 B2 JP7382988 B2 JP 7382988B2
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- electrode
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- tunnel barrier
- barrier layer
- ferroelectric
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 230000004888 barrier function Effects 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 19
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 14
- 239000000395 magnesium oxide Substances 0.000 claims description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 12
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical group [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 239000010408 film Substances 0.000 description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 230000015654 memory Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052706 scandium Inorganic materials 0.000 description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000005621 ferroelectricity Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Non-Volatile Memory (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
Claims (5)
- 積層構造体の製造方法であって、
強誘電体層とトンネルバリア層との接合を形成する工程を含み、
前記強誘電体層の主成分は窒化アルミニウムであり、
前記トンネルバリア層の主成分は酸化マグネシウムである、
ことを特徴とする積層構造体の製造方法。 - 前記工程は、前記強誘電体層の上に前記トンネルバリア層を形成する工程を含む、
ことを特徴とする請求項1に記載の積層構造体の製造方法。 - 前記工程は、前記トンネルバリア層の上に前記強誘電体層を形成する工程を含む、
ことを特徴とする請求項2に記載の積層構造体の製造方法。 - 前記強誘電体層は、ウルツ鉱構造を有し、前記ウルツ鉱構造の(001)面は、前記強誘電体層と前記トンネルバリア層との接合面に沿っている、
ことを特徴とする請求項1乃至3のいずれか1項に記載の積層構造体の製造方法。 - 前記トンネルバリア層は、NaCl構造を有し、前記NaCl構造の(111)面は、前記強誘電体層と前記トンネルバリア層との接合面に沿っている、
ことを特徴とする請求項1乃至4のいずれか1項に記載の積層構造体の製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021107796A JP7382988B2 (ja) | 2021-06-29 | 2021-06-29 | 積層構造体の製造方法 |
TW112138662A TWI840309B (zh) | 2021-06-29 | 2022-06-16 | 堆疊結構 |
TW111122363A TW202316635A (zh) | 2021-06-29 | 2022-06-16 | 堆疊結構、記憶體裝置和製造堆疊結構的方法 |
KR1020220076596A KR20230002071A (ko) | 2021-06-29 | 2022-06-23 | 적층 구조체, 메모리 디바이스 및 적층 구조체의 제조 방법 |
US17/851,178 US20220415912A1 (en) | 2021-06-29 | 2022-06-28 | Stacked structure, memory device and method of manufacturing stacked structure |
CN202210746286.2A CN115633506A (zh) | 2021-06-29 | 2022-06-28 | 堆叠结构、存储器装置和制造堆叠结构的方法 |
JP2023121897A JP2023129635A (ja) | 2021-06-29 | 2023-07-26 | 積層構造体およびメモリデバイス |
KR1020230146516A KR20230156002A (ko) | 2021-06-29 | 2023-10-30 | 적층 구조체, 메모리 디바이스 및 적층 구조체의 제조 방법 |
Applications Claiming Priority (1)
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JP2021107796A JP7382988B2 (ja) | 2021-06-29 | 2021-06-29 | 積層構造体の製造方法 |
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JP2023121897A Division JP2023129635A (ja) | 2021-06-29 | 2023-07-26 | 積層構造体およびメモリデバイス |
Publications (2)
Publication Number | Publication Date |
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JP2023005700A JP2023005700A (ja) | 2023-01-18 |
JP7382988B2 true JP7382988B2 (ja) | 2023-11-17 |
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JP2021107796A Active JP7382988B2 (ja) | 2021-06-29 | 2021-06-29 | 積層構造体の製造方法 |
JP2023121897A Pending JP2023129635A (ja) | 2021-06-29 | 2023-07-26 | 積層構造体およびメモリデバイス |
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JP2023121897A Pending JP2023129635A (ja) | 2021-06-29 | 2023-07-26 | 積層構造体およびメモリデバイス |
Country Status (5)
Country | Link |
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US (1) | US20220415912A1 (ja) |
JP (2) | JP7382988B2 (ja) |
KR (2) | KR20230002071A (ja) |
CN (1) | CN115633506A (ja) |
TW (1) | TW202316635A (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001077112A (ja) | 1999-07-07 | 2001-03-23 | Matsushita Electric Ind Co Ltd | 積層体,積層体の製造方法及び半導体素子 |
JP2003158309A (ja) | 2001-11-22 | 2003-05-30 | Toshiba Corp | 圧電振動素子、容量素子、及び記憶装置 |
JP2007150265A (ja) | 2005-10-28 | 2007-06-14 | Toshiba Corp | 磁気抵抗効果素子および磁気記憶装置 |
WO2015141625A1 (ja) | 2014-03-17 | 2015-09-24 | 株式会社 東芝 | 不揮発性記憶装置 |
JP2019057621A (ja) | 2017-09-21 | 2019-04-11 | 東芝メモリ株式会社 | 記憶装置 |
JP2019145677A (ja) | 2018-02-21 | 2019-08-29 | 株式会社デンソー | 圧電膜、その製造方法、圧電膜積層体、その製造方法 |
JP2021009893A (ja) | 2019-06-28 | 2021-01-28 | 国立大学法人東京工業大学 | トランジスタおよび不揮発性メモリ、トランジスタの製造方法 |
-
2021
- 2021-06-29 JP JP2021107796A patent/JP7382988B2/ja active Active
-
2022
- 2022-06-16 TW TW111122363A patent/TW202316635A/zh unknown
- 2022-06-23 KR KR1020220076596A patent/KR20230002071A/ko not_active Application Discontinuation
- 2022-06-28 US US17/851,178 patent/US20220415912A1/en active Pending
- 2022-06-28 CN CN202210746286.2A patent/CN115633506A/zh active Pending
-
2023
- 2023-07-26 JP JP2023121897A patent/JP2023129635A/ja active Pending
- 2023-10-30 KR KR1020230146516A patent/KR20230156002A/ko not_active Application Discontinuation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001077112A (ja) | 1999-07-07 | 2001-03-23 | Matsushita Electric Ind Co Ltd | 積層体,積層体の製造方法及び半導体素子 |
JP2003158309A (ja) | 2001-11-22 | 2003-05-30 | Toshiba Corp | 圧電振動素子、容量素子、及び記憶装置 |
JP2007150265A (ja) | 2005-10-28 | 2007-06-14 | Toshiba Corp | 磁気抵抗効果素子および磁気記憶装置 |
WO2015141625A1 (ja) | 2014-03-17 | 2015-09-24 | 株式会社 東芝 | 不揮発性記憶装置 |
JP2019057621A (ja) | 2017-09-21 | 2019-04-11 | 東芝メモリ株式会社 | 記憶装置 |
JP2019145677A (ja) | 2018-02-21 | 2019-08-29 | 株式会社デンソー | 圧電膜、その製造方法、圧電膜積層体、その製造方法 |
JP2021009893A (ja) | 2019-06-28 | 2021-01-28 | 国立大学法人東京工業大学 | トランジスタおよび不揮発性メモリ、トランジスタの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202316635A (zh) | 2023-04-16 |
KR20230156002A (ko) | 2023-11-13 |
CN115633506A (zh) | 2023-01-20 |
JP2023005700A (ja) | 2023-01-18 |
KR20230002071A (ko) | 2023-01-05 |
TW202406110A (zh) | 2024-02-01 |
JP2023129635A (ja) | 2023-09-14 |
US20220415912A1 (en) | 2022-12-29 |
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