JP2022527410A5 - - Google Patents

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Publication number
JP2022527410A5
JP2022527410A5 JP2021560515A JP2021560515A JP2022527410A5 JP 2022527410 A5 JP2022527410 A5 JP 2022527410A5 JP 2021560515 A JP2021560515 A JP 2021560515A JP 2021560515 A JP2021560515 A JP 2021560515A JP 2022527410 A5 JP2022527410 A5 JP 2022527410A5
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semiconductor device
polar
dopant
base
layer
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JP2021560515A
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JP2022527410A (ja
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Priority claimed from PCT/US2020/027103 external-priority patent/WO2020210257A1/en
Publication of JP2022527410A publication Critical patent/JP2022527410A/ja
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JP2021560515A 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス Pending JP2022527410A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962831044P 2019-04-08 2019-04-08
US62/831,044 2019-04-08
PCT/US2020/027103 WO2020210257A1 (en) 2019-04-08 2020-04-07 Doped polar layers and semiconductor device incorporating same

Publications (2)

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JP2022527410A JP2022527410A (ja) 2022-06-01
JP2022527410A5 true JP2022527410A5 (cg-RX-API-DMAC10.html) 2023-04-14

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JP2021560540A Pending JP2022523266A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560519A Pending JP2022527654A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560514A Pending JP2022523265A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560515A Pending JP2022527410A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス

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JP2021560540A Pending JP2022523266A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560519A Pending JP2022527654A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560514A Pending JP2022523265A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス

Country Status (7)

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US (24) US11469327B2 (cg-RX-API-DMAC10.html)
JP (4) JP2022523266A (cg-RX-API-DMAC10.html)
KR (4) KR20210151146A (cg-RX-API-DMAC10.html)
CN (4) CN113892155A (cg-RX-API-DMAC10.html)
DE (4) DE112020001816T5 (cg-RX-API-DMAC10.html)
TW (5) TWI878282B (cg-RX-API-DMAC10.html)
WO (4) WO2020210257A1 (cg-RX-API-DMAC10.html)

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