JP2022510370A5 - - Google Patents
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- Publication number
- JP2022510370A5 JP2022510370A5 JP2021531502A JP2021531502A JP2022510370A5 JP 2022510370 A5 JP2022510370 A5 JP 2022510370A5 JP 2021531502 A JP2021531502 A JP 2021531502A JP 2021531502 A JP2021531502 A JP 2021531502A JP 2022510370 A5 JP2022510370 A5 JP 2022510370A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive
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- providing
- multilayer
- along
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862775310P | 2018-12-04 | 2018-12-04 | |
| US62/775,310 | 2018-12-04 | ||
| PCT/US2019/064538 WO2020117978A1 (en) | 2018-12-04 | 2019-12-04 | Methods for forming multilayer horizontal nor-type thin-film memory strings |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022510370A JP2022510370A (ja) | 2022-01-26 |
| JP2022510370A5 true JP2022510370A5 (enExample) | 2022-11-17 |
| JP7526180B2 JP7526180B2 (ja) | 2024-07-31 |
Family
ID=70848763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021531502A Active JP7526180B2 (ja) | 2018-12-04 | 2019-12-04 | 多層水平ｎｏｒ型薄膜メモリストリングの形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US11404431B2 (enExample) |
| EP (1) | EP3891801A4 (enExample) |
| JP (1) | JP7526180B2 (enExample) |
| KR (1) | KR102761835B1 (enExample) |
| CN (1) | CN113169170B (enExample) |
| WO (1) | WO2020117978A1 (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11120884B2 (en) | 2015-09-30 | 2021-09-14 | Sunrise Memory Corporation | Implementing logic function and generating analog signals using NOR memory strings |
| US9842651B2 (en) | 2015-11-25 | 2017-12-12 | Sunrise Memory Corporation | Three-dimensional vertical NOR flash thin film transistor strings |
| US10121553B2 (en) | 2015-09-30 | 2018-11-06 | Sunrise Memory Corporation | Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays |
| US9892800B2 (en) | 2015-09-30 | 2018-02-13 | Sunrise Memory Corporation | Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates |
| US12537057B2 (en) | 2015-09-30 | 2026-01-27 | Sunrise Memory Corporation | Three-dimensional vertical nor flash thin film transistor strings |
| US10692874B2 (en) | 2017-06-20 | 2020-06-23 | Sunrise Memory Corporation | 3-dimensional NOR string arrays in segmented stacks |
| US10608011B2 (en) * | 2017-06-20 | 2020-03-31 | Sunrise Memory Corporation | 3-dimensional NOR memory array architecture and methods for fabrication thereof |
| US10608008B2 (en) | 2017-06-20 | 2020-03-31 | Sunrise Memory Corporation | 3-dimensional nor strings with segmented shared source regions |
| US10896916B2 (en) | 2017-11-17 | 2021-01-19 | Sunrise Memory Corporation | Reverse memory cell |
| CN111742368B (zh) | 2017-12-28 | 2022-09-13 | 日升存储公司 | 具有很细节距的三维nor存储器阵列：装置和方法 |
| US10475812B2 (en) | 2018-02-02 | 2019-11-12 | Sunrise Memory Corporation | Three-dimensional vertical NOR flash thin-film transistor strings |
| US11751391B2 (en) | 2018-07-12 | 2023-09-05 | Sunrise Memory Corporation | Methods for fabricating a 3-dimensional memory structure of nor memory strings |
| US10741581B2 (en) | 2018-07-12 | 2020-08-11 | Sunrise Memory Corporation | Fabrication method for a 3-dimensional NOR memory array |
| TWI713195B (zh) | 2018-09-24 | 2020-12-11 | 美商森恩萊斯記憶體公司 | 三維ｎｏｒ記憶電路製程中之晶圓接合及其形成之積體電路 |
| CN113169041B (zh) | 2018-12-07 | 2024-04-09 | 日升存储公司 | 形成多层垂直nor型存储器串阵列的方法 |
| JP7425069B2 (ja) | 2019-01-30 | 2024-01-30 | サンライズ メモリー コーポレイション | 基板接合を用いた高帯域幅・大容量メモリ組み込み型電子デバイス |
| JP7655853B2 (ja) | 2019-02-11 | 2025-04-02 | サンライズ メモリー コーポレイション | 垂直型薄膜トランジスタ、及び、垂直型薄膜トランジスタの、３次元メモリアレイのためのビット線コネクタとしての応用メモリ回路方法 |
| US11217600B2 (en) | 2019-07-09 | 2022-01-04 | Sunrise Memory Corporation | Process for a 3-dimensional array of horizontal NOR-type memory strings |
| US11917821B2 (en) | 2019-07-09 | 2024-02-27 | Sunrise Memory Corporation | Process for a 3-dimensional array of horizontal nor-type memory strings |
| WO2021127218A1 (en) | 2019-12-19 | 2021-06-24 | Sunrise Memory Corporation | Process for preparing a channel region of a thin-film transistor |
| TWI767512B (zh) | 2020-01-22 | 2022-06-11 | 美商森恩萊斯記憶體公司 | 薄膜儲存電晶體中冷電子抹除 |
| US12550382B2 (en) | 2020-01-22 | 2026-02-10 | Sunrise Memory Corporation | Thin-film storage transistor with ferroelectric storage layer |
| TWI836184B (zh) | 2020-02-07 | 2024-03-21 | 美商森恩萊斯記憶體公司 | 具有低延遲的高容量記憶體電路 |
| CN115362436A (zh) * | 2020-02-07 | 2022-11-18 | 日升存储公司 | 准易失性系统级存储器 |
| US11507301B2 (en) | 2020-02-24 | 2022-11-22 | Sunrise Memory Corporation | Memory module implementing memory centric architecture |
| WO2021173572A1 (en) | 2020-02-24 | 2021-09-02 | Sunrise Memory Corporation | Channel controller for shared memory access |
| WO2021173209A1 (en) | 2020-02-24 | 2021-09-02 | Sunrise Memory Corporation | High capacity memory module including wafer-section memory circuit |
| WO2021207050A1 (en) | 2020-04-08 | 2021-10-14 | Sunrise Memory Corporation | Charge-trapping layer with optimized number of charge-trapping sites for fast program and erase of a memory cell in a 3-dimensional nor memory string array |
| DE102020123746B4 (de) | 2020-05-29 | 2023-02-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dreidimensionale nichtflüchtige Speichervorrichtung und Verfahren zu deren Herstellung |
| US11482411B2 (en) * | 2020-06-30 | 2022-10-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method |
| US11640974B2 (en) | 2020-06-30 | 2023-05-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory array isolation structures |
| US11355516B2 (en) | 2020-07-16 | 2022-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional memory device and method |
| US11647634B2 (en) | 2020-07-16 | 2023-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional memory device and method |
| TW202220191A (zh) | 2020-07-21 | 2022-05-16 | 美商日升存儲公司 | 用於製造nor記憶體串之3維記憶體結構之方法 |
| US11423966B2 (en) | 2020-07-30 | 2022-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory array staircase structure |
| US11937424B2 (en) | 2020-08-31 | 2024-03-19 | Sunrise Memory Corporation | Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same |
| CN112018121B (zh) * | 2020-09-01 | 2023-10-24 | 长江存储科技有限责任公司 | 半导体器件及其制作方法 |
| JP7491815B2 (ja) * | 2020-11-12 | 2024-05-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US11842777B2 (en) | 2020-11-17 | 2023-12-12 | Sunrise Memory Corporation | Methods for reducing disturb errors by refreshing data alongside programming or erase operations |
| US11848056B2 (en) | 2020-12-08 | 2023-12-19 | Sunrise Memory Corporation | Quasi-volatile memory with enhanced sense amplifier operation |
| WO2022140084A1 (en) * | 2020-12-21 | 2022-06-30 | Sunrise Memory Corporation | Bit line and source line connections for a 3-dimensional array of memory circuits |
| CN116547796A (zh) | 2021-01-20 | 2023-08-04 | 日升存储公司 | 垂直nor闪存薄膜晶体管串及其制造 |
| CN112909011B (zh) * | 2021-03-08 | 2023-05-12 | 中国科学院微电子研究所 | Nor型存储器件及其制造方法及包括存储器件的电子设备 |
| US12245414B2 (en) * | 2021-03-18 | 2025-03-04 | Changxin Memory Technologies, Inc. | Method of etching a memory stack by etching a blind hole |
| JP2022146819A (ja) * | 2021-03-22 | 2022-10-05 | キオクシア株式会社 | 半導体記憶装置 |
| US11937514B2 (en) | 2021-05-06 | 2024-03-19 | International Business Machines Corporation | High-density memory devices using oxide gap fill |
| WO2023287908A1 (en) | 2021-07-16 | 2023-01-19 | Sunrise Memory Corporation | 3-dimensional memory string array of thin-film ferroelectric transistors |
| JP7617822B2 (ja) * | 2021-08-24 | 2025-01-20 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US12615769B2 (en) * | 2021-09-03 | 2026-04-28 | Sunrise Memory Corporation | Three-dimensional nor memory string arrays of thin-film ferroelectric transistors |
| US12402319B2 (en) | 2021-09-14 | 2025-08-26 | Sunrise Memory Corporation | Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel |
| US12506071B2 (en) * | 2022-01-18 | 2025-12-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor memory device and method for manufacturing the same |
| US20230262988A1 (en) * | 2022-02-14 | 2023-08-17 | Sunrise Memory Corporation | Memory structure including three-dimensional nor memory strings of junctionless ferroelectric memory transistors and method of fabrication |
| US20240114689A1 (en) * | 2022-09-30 | 2024-04-04 | Sunrise Memory Corporation | Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors formed with an oxide semiconductor channel |
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| US6887785B1 (en) * | 2004-05-13 | 2005-05-03 | International Business Machines Corporation | Etching openings of different depths using a single mask layer method and structure |
| TWI229377B (en) * | 2004-07-30 | 2005-03-11 | Touch Micro System Tech | Method for forming cavities having different aspect ratios |
| US7560388B2 (en) * | 2005-11-30 | 2009-07-14 | Lam Research Corporation | Self-aligned pitch reduction |
| US20080113483A1 (en) * | 2006-11-15 | 2008-05-15 | Micron Technology, Inc. | Methods of etching a pattern layer to form staggered heights therein and intermediate semiconductor device structures |
| US7553770B2 (en) | 2007-06-06 | 2009-06-30 | Micron Technology, Inc. | Reverse masking profile improvements in high aspect ratio etch |
| US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
| US8133659B2 (en) * | 2008-01-29 | 2012-03-13 | Brewer Science Inc. | On-track process for patterning hardmask by multiple dark field exposures |
| US7915171B2 (en) * | 2008-04-29 | 2011-03-29 | Intel Corporation | Double patterning techniques and structures |
| JP2010251572A (ja) * | 2009-04-16 | 2010-11-04 | Toshiba Corp | 不揮発性半導体記憶装置 |
| KR101525130B1 (ko) * | 2009-08-03 | 2015-06-03 | 에스케이하이닉스 주식회사 | 수직채널형 비휘발성 메모리 소자 및 그 제조 방법 |
| KR20110042619A (ko) * | 2009-10-19 | 2011-04-27 | 삼성전자주식회사 | 3차원 반도체 장치 및 그 제조 방법 |
| CN103579004B (zh) * | 2012-08-10 | 2016-05-11 | 中国科学院微电子研究所 | FinFET及其制造方法 |
| CN103730362B (zh) * | 2012-10-11 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法 |
| US9299574B2 (en) * | 2013-01-25 | 2016-03-29 | Applied Materials, Inc. | Silicon dioxide-polysilicon multi-layered stack etching with plasma etch chamber employing non-corrosive etchants |
| US9633907B2 (en) * | 2014-05-28 | 2017-04-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned nanowire formation using double patterning |
| US9449821B2 (en) | 2014-07-17 | 2016-09-20 | Macronix International Co., Ltd. | Composite hard mask etching profile for preventing pattern collapse in high-aspect-ratio trenches |
| US9666799B2 (en) * | 2014-10-31 | 2017-05-30 | Sandisk Technologies Llc | Concave word line and convex interlayer dielectric for protecting a read/write layer |
| CN105990245B (zh) * | 2015-02-04 | 2019-02-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和电子装置 |
| US10121553B2 (en) * | 2015-09-30 | 2018-11-06 | Sunrise Memory Corporation | Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays |
| US9496363B1 (en) * | 2015-10-14 | 2016-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET isolation structure and method for fabricating the same |
| US10381371B2 (en) * | 2015-12-22 | 2019-08-13 | Sandisk Technologies Llc | Through-memory-level via structures for a three-dimensional memory device |
| KR102513489B1 (ko) * | 2016-08-26 | 2023-03-23 | 선라이즈 메모리 코포레이션 | 3차원 어레이에서 용량 결합된 비휘발성 박막 트랜지스터 스트링 |
| US10043703B2 (en) * | 2016-12-15 | 2018-08-07 | Globalfoundries Inc. | Apparatus and method for forming interconnection lines having variable pitch and variable widths |
| CN107731844B (zh) * | 2017-08-30 | 2020-02-14 | 长江存储科技有限责任公司 | 3d存储器的蚀刻方法 |
| US10373969B2 (en) * | 2018-01-09 | 2019-08-06 | Sandisk Technologies Llc | Three-dimensional memory device including partially surrounding select gates and fringe field assisted programming thereof |
| US10903232B2 (en) * | 2018-02-14 | 2021-01-26 | Sandisk Technologies Llc | Three-dimensional memory devices containing memory stack structures with laterally separated charge storage elements and method of making thereof |
| US10256167B1 (en) * | 2018-03-23 | 2019-04-09 | Sandisk Technologies Llc | Hydrogen diffusion barrier structures for CMOS devices and method of making the same |
| US10784278B2 (en) * | 2018-07-30 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory device and manufacturing method thereof |
| US10629608B2 (en) * | 2018-09-26 | 2020-04-21 | Macronix International Co., Ltd. | 3D vertical channel tri-gate NAND memory with tilted hemi-cylindrical structure |
| US10847535B2 (en) * | 2018-12-24 | 2020-11-24 | Macronix International Co., Ltd. | Three dimensional memory device and method for fabricating the same |
| US11456368B2 (en) * | 2019-08-22 | 2022-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure with hard mask layer over fin structure and method for forming the same |
-
2019
- 2019-12-04 KR KR1020217021013A patent/KR102761835B1/ko active Active
- 2019-12-04 WO PCT/US2019/064538 patent/WO2020117978A1/en not_active Ceased
- 2019-12-04 US US16/703,663 patent/US11404431B2/en active Active
- 2019-12-04 CN CN201980080340.0A patent/CN113169170B/zh active Active
- 2019-12-04 JP JP2021531502A patent/JP7526180B2/ja active Active
- 2019-12-04 EP EP19893622.1A patent/EP3891801A4/en active Pending
-
2022
- 2022-06-28 US US17/809,535 patent/US12295143B2/en active Active
-
2025
- 2025-04-02 US US19/098,739 patent/US20250234550A1/en active Pending
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