JP7526180B2 - 多層水平ｎｏｒ型薄膜メモリストリングの形成方法 - Google Patents

多層水平ｎｏｒ型薄膜メモリストリングの形成方法 Download PDF

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JP7526180B2
JP7526180B2 JP2021531502A JP2021531502A JP7526180B2 JP 7526180 B2 JP7526180 B2 JP 7526180B2 JP 2021531502 A JP2021531502 A JP 2021531502A JP 2021531502 A JP2021531502 A JP 2021531502A JP 7526180 B2 JP7526180 B2 JP 7526180B2
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JP2022510370A (ja
JP2022510370A5 (enExample
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ブラッド ヘルナー、スコット
チエン、ウー－イー・ヘンリー
シュウ、ジエ
ハラリ、エリ
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Sunrise Memory Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Drying Of Semiconductors (AREA)
JP2021531502A 2018-12-04 2019-12-04 多層水平ｎｏｒ型薄膜メモリストリングの形成方法 Active JP7526180B2 (ja)

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Application Number Priority Date Filing Date Title
US201862775310P 2018-12-04 2018-12-04
US62/775,310 2018-12-04
PCT/US2019/064538 WO2020117978A1 (en) 2018-12-04 2019-12-04 Methods for forming multilayer horizontal nor-type thin-film memory strings

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JP2022510370A JP2022510370A (ja) 2022-01-26
JP2022510370A5 JP2022510370A5 (enExample) 2022-11-17
JP7526180B2 true JP7526180B2 (ja) 2024-07-31

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US (3) US11404431B2 (enExample)
EP (1) EP3891801A4 (enExample)
JP (1) JP7526180B2 (enExample)
KR (1) KR102761835B1 (enExample)
CN (1) CN113169170B (enExample)
WO (1) WO2020117978A1 (enExample)

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JP7425069B2 (ja) 2019-01-30 2024-01-30 サンライズ メモリー コーポレイション 基板接合を用いた高帯域幅・大容量メモリ組み込み型電子デバイス
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KR102761835B1 (ko) 2025-02-05
CN113169170B (zh) 2024-08-13
US12295143B2 (en) 2025-05-06
US20220328518A1 (en) 2022-10-13
JP2022510370A (ja) 2022-01-26
CN113169170A (zh) 2021-07-23
US11404431B2 (en) 2022-08-02
EP3891801A4 (en) 2022-08-24
EP3891801A1 (en) 2021-10-13
US20250234550A1 (en) 2025-07-17
US20200176468A1 (en) 2020-06-04
KR20210091822A (ko) 2021-07-22
WO2020117978A1 (en) 2020-06-11

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