JP2019522896A5 - - Google Patents
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- Publication number
- JP2019522896A5 JP2019522896A5 JP2018560761A JP2018560761A JP2019522896A5 JP 2019522896 A5 JP2019522896 A5 JP 2019522896A5 JP 2018560761 A JP2018560761 A JP 2018560761A JP 2018560761 A JP2018560761 A JP 2018560761A JP 2019522896 A5 JP2019522896 A5 JP 2019522896A5
- Authority
- JP
- Japan
- Prior art keywords
- slurry composition
- aluminum
- weight
- mechanical polishing
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims description 50
- 239000002002 slurry Substances 0.000 claims description 38
- 229910052782 aluminium Inorganic materials 0.000 claims description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 25
- 238000005498 polishing Methods 0.000 claims description 25
- 125000005372 silanol group Chemical group 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000003002 pH adjusting agent Substances 0.000 claims description 9
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 8
- -1 aluminum ions Chemical class 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- 230000003115 biocidal effect Effects 0.000 claims description 3
- 239000003139 biocide Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- GURLNXRFQUUOMW-UHFFFAOYSA-K [Al](Cl)(Cl)Cl.[AlH3] Chemical compound [Al](Cl)(Cl)Cl.[AlH3] GURLNXRFQUUOMW-UHFFFAOYSA-K 0.000 claims description 2
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 2
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 claims description 2
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 4
- 229910000519 Ferrosilicon Inorganic materials 0.000 claims 1
- 239000008119 colloidal silica Substances 0.000 claims 1
- 229910021485 fumed silica Inorganic materials 0.000 claims 1
- 150000002506 iron compounds Chemical class 0.000 claims 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 7
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 6
- GRLPQNLYRHEGIJ-UHFFFAOYSA-J potassium aluminium sulfate Chemical compound [Al+3].[K+].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O GRLPQNLYRHEGIJ-UHFFFAOYSA-J 0.000 description 4
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229940103272 aluminum potassium sulfate Drugs 0.000 description 2
- LCQXXBOSCBRNNT-UHFFFAOYSA-K ammonium aluminium sulfate Chemical compound [NH4+].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O LCQXXBOSCBRNNT-UHFFFAOYSA-K 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- HSEYYGFJBLWFGD-UHFFFAOYSA-N 4-methylsulfanyl-2-[(2-methylsulfanylpyridine-3-carbonyl)amino]butanoic acid Chemical compound CSCCC(C(O)=O)NC(=O)C1=CC=CN=C1SC HSEYYGFJBLWFGD-UHFFFAOYSA-N 0.000 description 1
- 229910018626 Al(OH) Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0061230 | 2016-05-19 | ||
| KR20160061230 | 2016-05-19 | ||
| PCT/KR2017/005118 WO2017200297A1 (ko) | 2016-05-19 | 2017-05-17 | 화학-기계적 연마용 슬러리 조성물 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019522896A JP2019522896A (ja) | 2019-08-15 |
| JP2019522896A5 true JP2019522896A5 (https=) | 2020-06-18 |
| JP7032327B2 JP7032327B2 (ja) | 2022-03-08 |
Family
ID=60325360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018560761A Active JP7032327B2 (ja) | 2016-05-19 | 2017-05-17 | 化学－機械的研磨用スラリー組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20190077993A1 (https=) |
| JP (1) | JP7032327B2 (https=) |
| KR (1) | KR102450333B1 (https=) |
| CN (1) | CN109153889B (https=) |
| TW (1) | TWI736623B (https=) |
| WO (1) | WO2017200297A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102672869B1 (ko) * | 2018-03-30 | 2024-06-05 | 닛키 쇼쿠바이카세이 가부시키가이샤 | 실리카 입자 분산액, 연마 조성물 및 실리카 입자 분산액의 제조 방법 |
| KR102709495B1 (ko) * | 2018-12-31 | 2024-09-25 | 주식회사 동진쎄미켐 | 화학-기계적 연마 입자 및 이를 포함하는 연마 슬러리 조성물 |
| KR102893154B1 (ko) * | 2019-02-21 | 2025-11-28 | 미쯔비시 케미컬 주식회사 | 실리카 입자와 그 제조 방법, 실리카졸, 연마 조성물, 연마 방법, 반도체 웨이퍼의 제조 방법 및 반도체 디바이스의 제조 방법 |
| WO2020196542A1 (ja) * | 2019-03-27 | 2020-10-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法および基板の製造方法 |
| JP7356865B2 (ja) * | 2019-10-30 | 2023-10-05 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物、及び磁気ディスク基板の研磨方法 |
| JP7356864B2 (ja) * | 2019-10-30 | 2023-10-05 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物、及び磁気ディスク基板の研磨方法 |
| JP7716857B2 (ja) * | 2020-03-23 | 2025-08-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP7663369B2 (ja) * | 2020-03-30 | 2025-04-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| TWI907392B (zh) * | 2020-03-30 | 2025-12-11 | 日商福吉米股份有限公司 | 研磨用組合物 |
| US11180679B1 (en) | 2020-05-27 | 2021-11-23 | Skc Solmics Co., Ltd. | Composition for semiconductor processing and method for polishing substrate using the same |
| WO2023007722A1 (ja) * | 2021-07-30 | 2023-02-02 | 昭和電工マテリアルズ株式会社 | 研磨液及び研磨方法 |
| WO2026048733A1 (ja) * | 2024-08-30 | 2026-03-05 | 富士フイルム株式会社 | 接合体の製造方法、感光性樹脂組成物、及び、半導体部材の製造方法 |
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| US3922393A (en) * | 1974-07-02 | 1975-11-25 | Du Pont | Process for polishing silicon and germanium semiconductor materials |
| JPS6086186A (ja) * | 1983-10-17 | 1985-05-15 | Toshiba Ceramics Co Ltd | 半導体ウエ−ハ研摩材 |
| US4959113C1 (en) * | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
| JPH0781132B2 (ja) * | 1990-08-29 | 1995-08-30 | 株式会社フジミインコーポレーテッド | 研磨剤組成物 |
| JPH1121545A (ja) * | 1997-06-30 | 1999-01-26 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
| US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
| US20020039839A1 (en) * | 1999-12-14 | 2002-04-04 | Thomas Terence M. | Polishing compositions for noble metals |
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| JP2003197573A (ja) * | 2001-12-26 | 2003-07-11 | Ekc Technology Kk | メタル膜絶縁膜共存表面研磨用コロイダルシリカ |
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| TW200516122A (en) * | 2003-06-27 | 2005-05-16 | Showa Denko Kk | Polishing composition and method for polishing substrate using the composition |
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| JP2007207908A (ja) * | 2006-01-31 | 2007-08-16 | Fujifilm Corp | バリア層用研磨液 |
| JP2007299942A (ja) * | 2006-04-28 | 2007-11-15 | Fujifilm Corp | 金属研磨用組成物及びそれを用いた化学的機械的研磨方法 |
| US20070298611A1 (en) * | 2006-06-27 | 2007-12-27 | Jinru Bian | Selective barrier slurry for chemical mechanical polishing |
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| KR20090010169A (ko) | 2007-02-20 | 2009-01-29 | 스미토모덴키고교가부시키가이샤 | 연마 슬러리 및 그 제조 방법과, 질화물 결정체 및 그 표면연마 방법 |
| JP2008288537A (ja) * | 2007-05-21 | 2008-11-27 | Fujifilm Corp | 金属用研磨液及び化学的機械的研磨方法 |
| JP2009238930A (ja) * | 2008-03-26 | 2009-10-15 | Fujifilm Corp | 金属用研磨液、及び化学的機械的研磨方法 |
| JP2009289887A (ja) * | 2008-05-28 | 2009-12-10 | Fujifilm Corp | 金属用研磨液、化学的機械的研磨方法、および新規化合物 |
| KR100928456B1 (ko) * | 2009-06-01 | 2009-11-25 | 주식회사 동진쎄미켐 | 이온화되지 않는 열활성 나노촉매를 포함하는 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마방법 |
| US8697576B2 (en) * | 2009-09-16 | 2014-04-15 | Cabot Microelectronics Corporation | Composition and method for polishing polysilicon |
| SG11201405080XA (en) * | 2012-02-29 | 2014-11-27 | Hoya Corp | Method for manufacturing magnetic-disk glass substrate and method for manufacturing magnetic disk |
| JP2013227168A (ja) * | 2012-04-25 | 2013-11-07 | Nippon Chem Ind Co Ltd | 表面に凹凸のあるシリカ粒子を有するコロイダルシリカ、その製造方法及びそれを用いた研磨剤 |
| WO2014150884A1 (en) | 2013-03-15 | 2014-09-25 | Ecolab Usa Inc. | Methods of polishing sapphire surfaces |
| CN105658757B (zh) * | 2013-10-23 | 2019-02-19 | 东进世美肯株式会社 | 金属膜抛光浆料组合物及使用其减少金属膜抛光时产生的划痕的方法 |
| CN104650739A (zh) * | 2013-11-22 | 2015-05-27 | 安集微电子（上海）有限公司 | 一种用于抛光二氧化硅基材的化学机械抛光液 |
| JP6482234B2 (ja) * | 2014-10-22 | 2019-03-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN104588568B (zh) * | 2014-11-21 | 2016-07-27 | 广东惠和硅制品有限公司 | 一种铝改性硅溶胶的制备方法 |
| US9803109B2 (en) * | 2015-02-03 | 2017-10-31 | Cabot Microelectronics Corporation | CMP composition for silicon nitride removal |
-
2017
- 2017-05-17 JP JP2018560761A patent/JP7032327B2/ja active Active
- 2017-05-17 CN CN201780030849.5A patent/CN109153889B/zh active Active
- 2017-05-17 KR KR1020170061076A patent/KR102450333B1/ko active Active
- 2017-05-17 WO PCT/KR2017/005118 patent/WO2017200297A1/ko not_active Ceased
- 2017-05-19 TW TW106116625A patent/TWI736623B/zh active
-
2018
- 2018-11-13 US US16/189,207 patent/US20190077993A1/en not_active Abandoned
- 2018-11-13 US US16/189,236 patent/US11001732B2/en active Active
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