JP2017507371A - 感光性化学増幅レジスト化学物質およびプロセスを使用する方法および技術 - Google Patents
感光性化学増幅レジスト化学物質およびプロセスを使用する方法および技術 Download PDFInfo
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Abstract
Description
本出願は、2014年2月24日に出願された“Methods and Techniques to use with Photosensitized Chemically Amplified Resist Chemicals and Processes”という名称の米国仮特許出願第61/944,041号明細書の利益を主張し、その全体が参照により本明細書に援用される。
206 前記下層上にフォトレジスト層を堆積するステップであって、前記フォトレジスト層が、第1の光波長活性化閾値と第2の光波長活性化閾値とを含む、ステップ
208 パターン化マスクを通して第1の光波長を前記基板上に露光するステップ
210 第2の光波長を前記基板に露光するステップ
212 前記基板上の前記フォトレジスト層を現像するステップ
304 下層とフォトレジスト層とを含む基板を受け取るステップであって、前記フォトレジスト層が第1の光波長活性化閾値と第2の光波長活性化閾値とを含む、ステップ
306 前記フォトレジスト上に第1のトップコート層を堆積するステップ
308 パターン化マスクを通して第1の光波長範囲を前記基板上に露光するステップ(FIG.3Bのブロック310に続く)
310 (FIG.3Aのブロック308からの続き)前記第1のトップコート層を除去するステップ
312 第2の光波長を前記基板上に露光するステップ
Claims (20)
- 基板を処理する方法であって:
前記基板上に下層を含む前記基板を受け取るステップであって、前記下層が下層屈折率および下層厚さを含む、ステップと;
前記下層上にフォトレジスト層を堆積するステップであって、前記フォトレジスト層が:
前記フォトレジスト層中の酸の生成を第1の酸濃度に制御する第1の光波長活性化閾値と;
前記第1の酸濃度を第2の酸濃度まで増加させる第2の光波長活性化閾値であって、第2の光波長が第1の光波長と異なる、第2の光波長活性化閾値と;
を含む、ステップと;
パターン化マスクを通して光の第1の波長を前記基板上に露光するステップと;
光の第2の波長を前記基板に露光するステップであって、前記光の第2の波長が前記光の第1の光波長と異なる波長を含む、ステップと;
を含む、方法。 - 前記下層が、光が前記下層の表面に反射するのを制限する発色団を含む、請求項1に記載の方法。
- 前記発色団が、炭素元素と、以下の元素: C、H、O、N、Bl、Br、S、またはIの少なくとも1種類以上とを含む、請求項2に記載の方法。
- 前記フォトレジスト層が:
フォトレジスト屈折率と;
フォトレジスト厚さと;
前記下層と前記フォトレジスト層との界面に隣接した干渉平面であって、光が前記下層から反射される場合に、前記フォトレジスト層の他の部分よりも比較的強い光強度の干渉を受けるように配置される干渉平面と;
を含む、請求項1に記載の方法。 - 前記フォトレジスト屈折率が0.9〜1.7を含む、請求項4に記載の方法。
- 前記発色団が、前記フォトレジスト層と下層界面との界面において、前記フォトレジスト層の残りの部分よりも高い濃度を含む、請求項2に記載の方法。
- 前記フォトレジスト層が:
フォトレジスト屈折率と;
フォトレジスト厚さと;
フォトレジストと前記下層との界面と反対側の前記フォトレジストの表面における前記フォトレジスト層の干渉表面であって、光が前記下層から反射される場合に、前記フォトレジスト層の他の部分よりも比較的強い光強度の干渉を受けるように配置される干渉表面と;
を含む、請求項1に記載の方法。 - 前記フォトレジスト厚さが30nm〜60nmの値を含む、請求項7に記載の方法。
- 前記発色団が、フォトレジスト層と前記下層との界面と反対側の前記フォトレジスト層の表面の近傍でより高い濃度を含む、請求項2に記載の方法。
- フォトレジストが:
アセトフェノン;
トリフェニレン;
ベンゾフェノン;
フルオレノン(flourenone);
アントラキノン;
フェナントレン;または
それらの誘導体;
を含む、光増感剤発生化合物と;
トリフェニルスルホニウムトリフレート、トリフェニルスルホニウムノナフレート、パーフルオロオクチルスルホン酸トリフェニルスルホニウム、トリアリールスルホニウムトリフレート、トリアリールスルホニウムノナフレート、パーフルオロオクチルスルホン酸トリアリールスルホニウム、トリフェニルスルホニウム塩、トリアリールスルホニウム塩、ヘキサフルオロアンチモン酸トリアリールスルホニウム塩、N−ヒドロキシナフタルイミドトリフレート、1,1−ビス[p−クロロフェニル]−2,2,2−トリクロロエタン(DDT)、1,1−ビス[p−メトキシフェニル]−2,2,2−トリクロロエタン、1,2,5,6,9,10−ヘキサブロモシクロドデカン、1,10−ジブロモデカン、1,1−ビス[p−クロロフェニル]2,2−ジクロロエタン、4,4−ジクロロ−2−(トリクロロメチル)ベンズヒドロール、1,1−ビス(クロロフェニル)2−2,2−トリクロロエタノール、ヘキサクロロジメチルスルホン、2−クロロ−6−(トリクロロメチル)ピリジン、またはそれらの誘導体の少なくとも1つを含む、光酸発生化合物と;
を含む、請求項1に記載の方法。 - 基板を処理する方法であって、
前記基板上に下層を含む前記基板を受け取るステップと;
前記下層上にフォトレジスト層を堆積するステップであって、フォトレジストが:
前記フォトレジスト層中の酸の生成を第1の酸濃度に制御する第1の光波長活性化閾値と;
前記第1の酸濃度を第2の酸濃度まで増加させる第2の光波長活性化閾値であって、第2の光波長が第1の光波長と異なる、第2の光波長活性化閾値と;
を含む、ステップと;
前記フォトレジスト上に第1のトップコート層を堆積するステップと;
パターン化マスクを通して光波長の第1の範囲を前記トップコート層および前記フォトレジスト層上に露光するステップと;
前記フォトレジストを露光するため、前記第1のトップコート層を除去するステップと;
光波長の第2の範囲を前記フォトレジスト層に露光するステップであって、光の露光が、前記フォトレジスト層にわたるブランケット露光である、ステップと;
前記フォトレジスト層を現像するステップと;
を含む、方法。 - 前記第1のトップコート層が、15nmより大きい波長の光が前記フォトレジストに到達するのを防止する、請求項11に記載の方法。
- 前記第1のトップコート層の前記除去の後に、前記フォトレジスト上に第2のトップコート層を堆積するステップをさらに含む、請求項12に記載の方法。
- 前記第2のトップコート層が、300nm未満の波長の光が前記フォトレジストに到達するのを防止する、請求項13に記載の方法。
- 基板を処理する方法であって、
前記基板上に下層を堆積するステップと;
前記下層上にフォトレジスト層を堆積するステップであって、フォトレジストが:
前記フォトレジスト層中の酸の生成を第1の酸濃度に制御する第1の光波長活性化閾値と、
前記第1の酸濃度を第2の酸濃度まで増加させる第2の光波長活性化閾値であって、第2の光波長が第1の光波長と異なる、第2の光波長活性化閾値と、
を含む、ステップと;
前記フォトレジスト上にEUVトップコート層を堆積するステップと;
パターン化マスクを通して光の第1の波長をEUVトップコートおよび前記フォトレジスト層上に露光するステップであって、前記光の第1の波長がEUVスペクトル中の波長を含む、ステップと;
光の第2の波長を前記フォトレジストに対して前記EUVトップコートおよび前記フォトレジスト層上に露光するステップであって、第2の露光が前記基板のブランケット露光であり、前記光の第2の波長が前記第1の光波長と異なる波長を含む、ステップと;
前記フォトレジスト層を現像するステップと;
を含む、方法。 - 前記第1の波長が30nm未満の大きさを含み、かつ前記光の第2の波長が30nm以上の大きさを含む、請求項15に記載の方法。
- 前記光の第1の波長の前記露光の後に、120秒以下にわたり前記基板を30℃〜90℃に加熱するステップをさらに含む、請求項15に記載の方法。
- 前記光の第2の波長の前記露光の後に、120秒以下にわたり前記基板を80℃〜130℃に加熱するステップをさらに含む、請求項17に記載の方法。
- 前記EUVトップコートが:
前記光の第1の波長の前記露光中の前記フォトレジスト層からのガス放出を減少させ、
光の第1の波長範囲の前記露光からの帯域外放射線による意図しない酸光分解の発生を軽減し、かつ
前記光の第2の波長が前記フォトレジストを透過することを可能にする、
ように構成される、請求項15に記載の方法。 - EUVトップコートが0.9〜1.1の屈折率を含む、請求項15に記載の方法。
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