JP2016534560A - 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供 - Google Patents

基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供 Download PDF

Info

Publication number
JP2016534560A
JP2016534560A JP2016534851A JP2016534851A JP2016534560A JP 2016534560 A JP2016534560 A JP 2016534560A JP 2016534851 A JP2016534851 A JP 2016534851A JP 2016534851 A JP2016534851 A JP 2016534851A JP 2016534560 A JP2016534560 A JP 2016534560A
Authority
JP
Japan
Prior art keywords
silicon
gas
sih
silicon precursor
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016534851A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016534560A5 (enExample
Inventor
タン，イン
スウィーニー，ジョセフ・ディー
チェン，ティエンニウ
メイヤー，ジェームズ・ジェイ
レイ，リチャード・エス
ビル，オレグ
イェデイブ，シャラド・エヌ
カイム，ロバート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Entegris Inc
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of JP2016534560A publication Critical patent/JP2016534560A/ja
Publication of JP2016534560A5 publication Critical patent/JP2016534560A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
JP2016534851A 2013-08-16 2014-08-14 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供 Pending JP2016534560A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361866918P 2013-08-16 2013-08-16
US61/866,918 2013-08-16
PCT/US2014/051162 WO2015023903A1 (en) 2013-08-16 2014-08-14 Silicon implantation in substrates and provision of silicon precursor compositions therefor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019044461A Division JP6783338B2 (ja) 2013-08-16 2019-03-12 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供

Publications (2)

Publication Number Publication Date
JP2016534560A true JP2016534560A (ja) 2016-11-04
JP2016534560A5 JP2016534560A5 (enExample) 2017-09-21

Family

ID=52468713

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016534851A Pending JP2016534560A (ja) 2013-08-16 2014-08-14 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供
JP2019044461A Active JP6783338B2 (ja) 2013-08-16 2019-03-12 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019044461A Active JP6783338B2 (ja) 2013-08-16 2019-03-12 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供

Country Status (8)

Country Link
US (1) US11062906B2 (enExample)
EP (1) EP3033765A4 (enExample)
JP (2) JP2016534560A (enExample)
KR (1) KR102306410B1 (enExample)
CN (1) CN105637616A (enExample)
SG (2) SG11201601015RA (enExample)
TW (2) TWI636011B (enExample)
WO (1) WO2015023903A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022514242A (ja) * 2018-12-15 2022-02-10 インテグリス・インコーポレーテッド 非タングステン材料を有するフッ素イオン注入システムおよび使用方法
JP2023544172A (ja) * 2020-10-02 2023-10-20 インテグリス・インコーポレーテッド アルミニウムイオンを生成するために有用な方法およびシステム
TWI922508B (zh) 2020-10-02 2026-04-21 美商恩特葛瑞斯股份有限公司 用於產生鋁離子之方法及系統

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9887067B2 (en) * 2014-12-03 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
US9620376B2 (en) * 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
TWI707378B (zh) * 2016-04-08 2020-10-11 美商瓦里安半導體設備公司 將加工物質植入工件中與將摻雜劑植入工件中的方法及用於加工工件的設備
US20170294289A1 (en) * 2016-04-11 2017-10-12 Aaron Reinicker Boron compositions suitable for ion implantation to produce a boron-containing ion beam current
CN109196617B (zh) * 2016-05-13 2021-02-12 恩特格里斯公司 于氮离子植入中改善离子源效能的氟化组合物
US20170330725A1 (en) 2016-05-13 2017-11-16 Axcelis Technologies, Inc. Lanthanated tungsten ion source and beamline components
US10361081B2 (en) * 2016-11-24 2019-07-23 Axcelis Technologies, Inc. Phosphine co-gas for carbon implants
US10256069B2 (en) * 2016-11-24 2019-04-09 Axcelis Technologies, Inc. Phosphorous trifluoride co-gas for carbon implants
US10177026B2 (en) 2016-11-29 2019-01-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and fabrication method therefor
WO2022044562A1 (ja) * 2020-08-26 2022-03-03 株式会社Sumco エピタキシャルシリコンウェーハ及びその製造方法、並びに半導体デバイスの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128984A (ja) * 1991-10-31 1993-05-25 Nissin Electric Co Ltd イオン源
JP2008091426A (ja) * 2006-09-29 2008-04-17 Fujitsu Ltd 半導体装置及びその製造方法
JP2010522966A (ja) * 2007-03-29 2010-07-08 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド ガスを混合させることによってイオン源の性能を向上させると共にイオン源を長寿命化する技術
WO2012037007A2 (en) * 2010-09-15 2012-03-22 Praxair Technology, Inc. Method for extending lifetime of an ion source
JP2013509004A (ja) * 2009-10-27 2013-03-07 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド イオン注入システムおよび方法
JP2013521596A (ja) * 2010-02-26 2013-06-10 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド イオン注入システム中のイオン源の寿命および性能を向上させる方法および装置

Family Cites Families (124)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482262B1 (en) 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
US4331647A (en) 1980-03-03 1982-05-25 Goldenberg Milton David Tumor localization and therapy with labeled antibody fragments specific to tumor-associated markers
US4348376A (en) 1980-03-03 1982-09-07 Goldenberg Milton David Tumor localization and therapy with labeled anti-CEA antibody
JPS588071A (ja) 1981-07-08 1983-01-18 Nippon Iyakuhin Kogyo Kk ２−ベンゾチアゾリノン−３−酢酸アミド誘導体またはその薬学的に活性な塩類の製造法
US4459427A (en) 1981-10-31 1984-07-10 The British Petroleum Company P.L.C. Process for the conversion of an alkane to a mixture of an alcohol and a ketone
US4847504A (en) 1983-08-15 1989-07-11 Applied Materials, Inc. Apparatus and methods for ion implantation
DE3584105D1 (de) 1984-03-16 1991-10-24 Hitachi Ltd Ionenquelle.
JPS60221566A (ja) 1984-04-18 1985-11-06 Agency Of Ind Science & Technol 薄膜形成装置
US4722978A (en) 1985-08-30 1988-02-02 The B. F. Goodrich Company Allyl terminated macromolecular monomers of polyethers
JPS6295820A (ja) 1985-10-23 1987-05-02 Hitachi Ltd イオン打込み方法
US4680358A (en) 1985-11-08 1987-07-14 The B F Goodrich Company Styryl terminated macromolecular monomers of polyethers
JPS6315228A (ja) 1986-07-08 1988-01-22 Asahi Glass Co Ltd エレクトロクロミツク素子
JPH0772167B2 (ja) 1986-09-04 1995-08-02 サントリー株式会社 ４―アミノ―３―ヒドロキシ酪酸誘導体の製法
US4851255A (en) 1986-12-29 1989-07-25 Air Products And Chemicals, Inc. Ion implant using tetrafluoroborate
JPS6483147A (en) 1987-09-25 1989-03-28 Olympus Optical Co Manufacture of chemical sensitivity field effect transistor
JPH01225117A (ja) 1988-03-04 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法及びその製造装置
JP2699549B2 (ja) 1988-06-03 1998-01-19 日産化学工業株式会社 ４―ベンゾイル―５―ヒドロキシピラゾール類の製法
JP2533639B2 (ja) 1988-10-07 1996-09-11 株式会社富士電機総合研究所 Ｐ形炭素添加非晶質シリコンの生成方法
JPH03165443A (ja) 1989-11-24 1991-07-17 Shimadzu Corp イオン注入方法
JPH05254808A (ja) 1992-03-10 1993-10-05 Semiconductor Energy Lab Co Ltd 窒化ほう素の作製方法
JPH0680681A (ja) 1992-07-15 1994-03-22 Nippon Kayaku Co Ltd ホスホニウム化合物及びそれを用いた電子写真用トナー
WO1995000977A1 (fr) 1993-06-23 1995-01-05 Toray Industries, Inc. Electrode d'element, element secondaire utilisant cette electrode d'element et son procede de production
JPH0765761A (ja) 1993-08-30 1995-03-10 Hitachi Ltd 薄膜形成方法およびイオン注入方法
JPH0790201A (ja) 1993-09-22 1995-04-04 Hokko Chem Ind Co Ltd 水中防汚塗料
JP3502185B2 (ja) 1995-04-12 2004-03-02 松下電器産業株式会社 イオン注入方法
DE19537759C1 (de) 1995-10-10 1996-11-28 Siemens Ag Verfahren und Vorrichtung zur Implantation von Dotierstoff
US5977552A (en) 1995-11-24 1999-11-02 Applied Materials, Inc. Boron ion sources for ion implantation apparatus
US5993766A (en) 1996-05-20 1999-11-30 Advanced Technology Materials, Inc. Gas source and dispensing system
GB2317265A (en) 1996-09-13 1998-03-18 Aea Technology Plc Radio frequency plasma generator
JPH10251592A (ja) 1997-03-07 1998-09-22 Kansai Paint Co Ltd 塗料組成物およびその塗装法
US6086837A (en) 1997-04-24 2000-07-11 Bechtel Bwxt Idaho, Llc Method of synthesizing enriched decaborane for use in generating boron neutron capture therapy pharmaceuticals
US5943594A (en) 1997-04-30 1999-08-24 International Business Machines Corporation Method for extended ion implanter source lifetime with control mechanism
US5940724A (en) 1997-04-30 1999-08-17 International Business Machines Corporation Method for extended ion implanter source lifetime
US5962858A (en) 1997-07-10 1999-10-05 Eaton Corporation Method of implanting low doses of ions into a substrate
US6096467A (en) 1997-11-19 2000-08-01 Mita Industrial Co., Ltd. Positive charging color toner
US6135128A (en) 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
US6215125B1 (en) 1998-09-16 2001-04-10 International Business Machines Corporation Method to operate GEF4 gas in hot cathode discharge ion sources
US6614082B1 (en) 1999-01-29 2003-09-02 Micron Technology, Inc. Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
US6146601A (en) 1999-10-28 2000-11-14 Eagle-Picher Industries, Inc. Enrichment of silicon or germanium isotopes
US6756600B2 (en) 1999-02-19 2004-06-29 Advanced Micro Devices, Inc. Ion implantation with improved ion source life expectancy
US6376664B1 (en) 1999-03-17 2002-04-23 The Ohio State University Cyclic bis-benzimidazole ligands and metal complexes thereof
US6420304B1 (en) 2000-04-20 2002-07-16 China Petrochemical Development Corporation Polymer-supported carbonylation catalyst and its use
JP4634569B2 (ja) 2000-05-25 2011-02-16 東芝モバイルディスプレイ株式会社 イオン注入装置及び薄膜半導体装置
US6486227B2 (en) 2000-06-19 2002-11-26 Kimberly-Clark Worldwide, Inc. Zinc-complex photoinitiators and applications therefor
EP1303866B1 (en) 2000-07-10 2009-12-09 TEL Epion Inc. System and method for improving thin films by gas cluster ion be am processing
KR20000072651A (ko) 2000-08-08 2000-12-05 이관호 식물 신품종 쌈추 및 그 육종방법
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US20020058385A1 (en) 2000-10-26 2002-05-16 Taiji Noda Semiconductor device and method for manufacturing the same
US6559462B1 (en) 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
US6855436B2 (en) 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
JP3824058B2 (ja) 2001-05-23 2006-09-20 独立行政法人産業技術総合研究所 カルボランスーパークラスターおよびその製造方法
GB0128913D0 (en) 2001-12-03 2002-01-23 Applied Materials Inc Improvements in ion sources for ion implantation apparatus
AU2002364611A1 (en) 2001-12-31 2003-07-24 The Ohio State University Research Foundation Strapped and modified bis (benzimidazole) diamides for asymmetric catalysts and other applications
GB2387022B (en) 2002-03-28 2005-12-21 Applied Materials Inc Monatomic boron ion source and method
US7138768B2 (en) 2002-05-23 2006-11-21 Varian Semiconductor Equipment Associates, Inc. Indirectly heated cathode ion source
US20040002202A1 (en) 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
US7960709B2 (en) 2002-06-26 2011-06-14 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
KR100464935B1 (ko) 2002-09-17 2005-01-05 주식회사 하이닉스반도체 불화붕소화합물 도핑에 의한 초박형 에피채널을 갖는반도체소자의 제조 방법
US20040110351A1 (en) 2002-12-05 2004-06-10 International Business Machines Corporation Method and structure for reduction of junction capacitance in a semiconductor device and formation of a uniformly lowered threshold voltage device
US7410890B2 (en) 2002-12-12 2008-08-12 Tel Epion Inc. Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
US7396745B2 (en) 2004-12-03 2008-07-08 Tel Epion Inc. Formation of ultra-shallow junctions by gas-cluster ion irradiation
EP1584104A4 (en) 2002-12-12 2010-05-26 Tel Epion Inc RE-CRYSTALLIZATION OF A SEMICONDUCTIVE SURFACE FILM AND SEMICONDUCTOR DOTING BY MEANS OF ENERGETIC CLUSTER RADIATION
US6780896B2 (en) 2002-12-20 2004-08-24 Kimberly-Clark Worldwide, Inc. Stabilized photoinitiators and applications thereof
US6936505B2 (en) 2003-05-20 2005-08-30 Intel Corporation Method of forming a shallow junction
JP4619951B2 (ja) 2003-08-25 2011-01-26 パナソニック株式会社 不純物導入層の形成方法
JP2005093518A (ja) 2003-09-12 2005-04-07 Matsushita Electric Ind Co Ltd 不純物導入の制御方法および不純物導入装置
KR101160642B1 (ko) 2003-12-12 2012-06-28 세미이큅, 인코포레이티드 고체로부터 승화된 증기의 유동제어
TWI375660B (en) 2004-01-22 2012-11-01 Semequip Inc Isotopically-enriched boranes and methods of preparing them
TWI372725B (en) 2004-01-30 2012-09-21 Semequip Inc Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes
US7015108B2 (en) 2004-02-26 2006-03-21 Intel Corporation Implanting carbon to form P-type drain extensions
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
US7494888B2 (en) 2004-06-23 2009-02-24 Agere Systems Inc. Device and method using isotopically enriched silicon
US7397048B2 (en) 2004-09-17 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Technique for boron implantation
US7563308B2 (en) 2004-09-23 2009-07-21 Air Products And Chemicals, Inc. Ionic liquid based mixtures for gas storage and delivery
US7404845B2 (en) 2004-09-23 2008-07-29 Air Products And Chemicals, Inc. Ionic liquid based mixtures for gas storage and delivery
WO2006047061A2 (en) 2004-10-22 2006-05-04 Semequip Inc. Use of defined compounds for the manufacture of a medicament for preventing/ treating diseases resulting from somatic mutation
US7955797B2 (en) 2004-10-25 2011-06-07 Advanced Technology Materials, Inc. Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel
US20060104851A1 (en) 2004-11-12 2006-05-18 Tillotson Brian J Isotopic densification of propellant
US7687025B2 (en) 2004-11-12 2010-03-30 The Boeing Company Isotopic lightening
KR20060077942A (ko) 2004-12-30 2006-07-05 매그나칩 반도체 유한회사 이온주입기의 사용방법
WO2006095086A2 (fr) 2005-03-07 2006-09-14 Laurence Faure Traçabilite des anomalies du cycle cellulaire ciblant l'oncologie et la neurodegenerescence.
EP1899040A2 (en) 2005-06-22 2008-03-19 Advanced Technology Materials, Inc. Apparatus and process for integrated gas blending
US7491947B2 (en) 2005-08-17 2009-02-17 Varian Semiconductor Equipment Associates, Inc. Technique for improving performance and extending lifetime of indirectly heated cathode ion source
JP5591470B2 (ja) 2005-08-30 2014-09-17 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド 代替フッ化ホウ素前駆体を使用するホウ素イオン注入および注入のための大きな水素化ホウ素の形成
US20100112795A1 (en) 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
DE102005054218B4 (de) 2005-11-14 2011-06-09 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiterelements und Halbleiterelement
JP5583344B2 (ja) 2005-12-09 2014-09-03 セムイクウィップ・インコーポレーテッド 炭素クラスターの注入により半導体デバイスを製造するためのシステムおよび方法
US20070178679A1 (en) 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US7473606B2 (en) 2006-02-22 2009-01-06 United Microelectronics Corp. Method for fabricating metal-oxide semiconductor transistors
US7737010B2 (en) * 2006-04-14 2010-06-15 Micron Technology, Inc. Method of photoresist strip for plasma doping process of semiconductor manufacturing
WO2007134183A2 (en) 2006-05-13 2007-11-22 Advanced Technology Materials, Inc. Chemical reagent delivery system utilizing ionic liquid storage medium
WO2008023821A1 (fr) 2006-08-25 2008-02-28 National Institute For Materials Science Semi-conducteur et son procédé de production
US8013312B2 (en) 2006-11-22 2011-09-06 Semequip, Inc. Vapor delivery system useful with ion sources and vaporizer for use in such system
US7919402B2 (en) 2006-12-06 2011-04-05 Semequip, Inc. Cluster ion implantation for defect engineering
US7887634B2 (en) 2006-12-22 2011-02-15 Infineon Technologies Ag Method of producing a semiconductor element and semiconductor element
US7586109B2 (en) * 2007-01-25 2009-09-08 Varian Semiconductor Equipment Associates, Inc. Technique for improving the performance and extending the lifetime of an ion source with gas dilution
US7833886B2 (en) 2007-05-14 2010-11-16 Infineon Technologies Ag Method of producing a semiconductor element in a substrate
US20080305598A1 (en) 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
JP2009065136A (ja) 2007-08-16 2009-03-26 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法
EP2212251B1 (en) 2007-11-02 2016-12-21 Semequip, Inc. Methods of preparing clusterboron
US8252115B2 (en) 2008-04-02 2012-08-28 Raytheon Company System and method for growing nanotubes with a specified isotope composition via ion implantation using a catalytic transmembrane
WO2009145908A1 (en) 2008-05-30 2009-12-03 Axcelis Technologies, Inc. Control of particles on semiconductor wafers when implanting boron hydrides
US7759657B2 (en) 2008-06-19 2010-07-20 Axcelis Technologies, Inc. Methods for implanting B22Hx and its ionized lower mass byproducts
US8809800B2 (en) 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
WO2010077568A1 (en) * 2008-12-17 2010-07-08 Exxonmobil Upstream Research Company System and method for performing time-lapse monitor surveying using sparse monitor data
US7973293B2 (en) 2009-01-09 2011-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Implantation quality improvement by xenon/hydrogen dilution gas
US7858503B2 (en) * 2009-02-06 2010-12-28 Applied Materials, Inc. Ion implanted substrate having capping layer and method
US7947582B2 (en) 2009-02-27 2011-05-24 Tel Epion Inc. Material infusion in a trap layer structure using gas cluster ion beam processing
US9627180B2 (en) 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning
US8237136B2 (en) 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8187971B2 (en) 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
FR2953112B1 (fr) 2009-12-02 2011-11-11 Seb Sa Appareil de preparation de boissons infusees avec reserve amovible
US20110143527A1 (en) 2009-12-14 2011-06-16 Varian Semiconductor Equipment Associates, Inc. Techniques for generating uniform ion beam
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
JP5714831B2 (ja) 2010-03-18 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9984855B2 (en) 2010-11-17 2018-05-29 Axcelis Technologies, Inc. Implementation of co-gases for germanium and boron ion implants
US9269582B2 (en) 2011-03-24 2016-02-23 Entegris, Inc. Cluster ion implantation of arsenic and phosphorus
US20130217240A1 (en) * 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-carbon-nitrogen layers for semiconductor processing
US8803112B2 (en) * 2012-08-28 2014-08-12 Praxair Technology, Inc. Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
US8883620B1 (en) 2013-04-24 2014-11-11 Praxair Technology, Inc. Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128984A (ja) * 1991-10-31 1993-05-25 Nissin Electric Co Ltd イオン源
JP2008091426A (ja) * 2006-09-29 2008-04-17 Fujitsu Ltd 半導体装置及びその製造方法
JP2010522966A (ja) * 2007-03-29 2010-07-08 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド ガスを混合させることによってイオン源の性能を向上させると共にイオン源を長寿命化する技術
JP2013509004A (ja) * 2009-10-27 2013-03-07 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド イオン注入システムおよび方法
JP2013521596A (ja) * 2010-02-26 2013-06-10 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド イオン注入システム中のイオン源の寿命および性能を向上させる方法および装置
WO2012037007A2 (en) * 2010-09-15 2012-03-22 Praxair Technology, Inc. Method for extending lifetime of an ion source
JP2013545217A (ja) * 2010-09-15 2013-12-19 プラクスエア・テクノロジー・インコーポレイテッド イオン源の寿命を延長するための方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022514242A (ja) * 2018-12-15 2022-02-10 インテグリス・インコーポレーテッド 非タングステン材料を有するフッ素イオン注入システムおよび使用方法
JP2023544172A (ja) * 2020-10-02 2023-10-20 インテグリス・インコーポレーテッド アルミニウムイオンを生成するために有用な方法およびシステム
TWI922508B (zh) 2020-10-02 2026-04-21 美商恩特葛瑞斯股份有限公司 用於產生鋁離子之方法及系統

Also Published As

Publication number Publication date
TWI654136B (zh) 2019-03-21
US20160211137A1 (en) 2016-07-21
KR102306410B1 (ko) 2021-09-28
WO2015023903A1 (en) 2015-02-19
TW201514095A (zh) 2015-04-16
TWI636011B (zh) 2018-09-21
US11062906B2 (en) 2021-07-13
EP3033765A1 (en) 2016-06-22
KR20160043066A (ko) 2016-04-20
SG11201601015RA (en) 2016-03-30
JP6783338B2 (ja) 2020-11-11
TW201808803A (zh) 2018-03-16
SG10201801299YA (en) 2018-03-28
JP2019134171A (ja) 2019-08-08
EP3033765A4 (en) 2017-08-16
CN105637616A (zh) 2016-06-01

Similar Documents

Publication Publication Date Title
JP6783338B2 (ja) 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供
CN102668016B (zh) 离子注入系统及方法
US9455147B2 (en) Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US9831063B2 (en) Ion implantation compositions, systems, and methods
KR102538780B1 (ko) Ａｌｄ에 의해 형성된 실리콘 나이트라이드 막의 피처-내 습식 에칭 레이트의 균일한 감소를 위한 방법들 및 장치들
EP2606004B1 (en) Isotopically-enriched boron-containing compounds, and methods of making and using same
US9685304B2 (en) Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI508142B (zh) 低能量、高劑量砷、磷與硼植入晶圓的安全處理
US8138071B2 (en) Isotopically-enriched boron-containing compounds, and methods of making and using same
KR20130102595A (ko) 이온 소스의 수명 연장 방법
CN107078009A (zh) 利用增强源技术进行磷或砷离子植入
US20200194264A1 (en) Fluorine ion implantation method and system
US20210040617A1 (en) Remote capacitively coupled plasma deposition of amorphous silicon
CN105849869A (zh) 植入产率强化方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160418

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170808

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170808

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20171124

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20171225

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180531

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180605

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180903

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180911

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180912

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20181113

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190312

C60 Trial request (containing other claim documents, opposition documents)

Free format text: JAPANESE INTERMEDIATE CODE: C60

Effective date: 20190312

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20190319

C21 Notice of transfer of a case for reconsideration by examiners before appeal proceedings

Free format text: JAPANESE INTERMEDIATE CODE: C21

Effective date: 20190326

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20190517

C211 Notice of termination of reconsideration by examiners before appeal proceedings

Free format text: JAPANESE INTERMEDIATE CODE: C211

Effective date: 20190521

C22 Notice of designation (change) of administrative judge

Free format text: JAPANESE INTERMEDIATE CODE: C22

Effective date: 20190827

C22 Notice of designation (change) of administrative judge

Free format text: JAPANESE INTERMEDIATE CODE: C22

Effective date: 20200324

C22 Notice of designation (change) of administrative judge

Free format text: JAPANESE INTERMEDIATE CODE: C22

Effective date: 20200414

C13 Notice of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: C13

Effective date: 20200609

C22 Notice of designation (change) of administrative judge

Free format text: JAPANESE INTERMEDIATE CODE: C22

Effective date: 20201027

C23 Notice of termination of proceedings

Free format text: JAPANESE INTERMEDIATE CODE: C23

Effective date: 20201104

C03 Trial/appeal decision taken

Free format text: JAPANESE INTERMEDIATE CODE: C03

Effective date: 20201208

C30A Notification sent

Free format text: JAPANESE INTERMEDIATE CODE: C3012

Effective date: 20201208