EP1584104A4 - RECRYSTALLIZATION OF SEMICONDUCTOR SUPERFICIAL FILMS BY AMAS ENERGETIC IRRADIATION - Google Patents

RECRYSTALLIZATION OF SEMICONDUCTOR SUPERFICIAL FILMS BY AMAS ENERGETIC IRRADIATION

Info

Publication number
EP1584104A4
EP1584104A4 EP03799903A EP03799903A EP1584104A4 EP 1584104 A4 EP1584104 A4 EP 1584104A4 EP 03799903 A EP03799903 A EP 03799903A EP 03799903 A EP03799903 A EP 03799903A EP 1584104 A4 EP1584104 A4 EP 1584104A4
Authority
EP
European Patent Office
Prior art keywords
amas
recrystallization
energetic irradiation
semiconductor
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03799903A
Other languages
German (de)
French (fr)
Other versions
EP1584104A2 (en
Inventor
Allen R Kirkpatrick
John J Hautala
Martin D Tabat
Thomas G Tetreault
Sean Kirkpatrick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TEL Epion Inc
Original Assignee
TEL Epion Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TEL Epion Inc filed Critical TEL Epion Inc
Publication of EP1584104A2 publication Critical patent/EP1584104A2/en
Publication of EP1584104A4 publication Critical patent/EP1584104A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
EP03799903A 2002-12-12 2003-12-12 RECRYSTALLIZATION OF SEMICONDUCTOR SUPERFICIAL FILMS BY AMAS ENERGETIC IRRADIATION Withdrawn EP1584104A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US43386602P 2002-12-12 2002-12-12
US433866P 2002-12-12
PCT/US2003/039754 WO2004053945A2 (en) 2002-12-12 2003-12-12 Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation

Publications (2)

Publication Number Publication Date
EP1584104A2 EP1584104A2 (en) 2005-10-12
EP1584104A4 true EP1584104A4 (en) 2010-05-26

Family

ID=32508036

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03799903A Withdrawn EP1584104A4 (en) 2002-12-12 2003-12-12 RECRYSTALLIZATION OF SEMICONDUCTOR SUPERFICIAL FILMS BY AMAS ENERGETIC IRRADIATION

Country Status (4)

Country Link
EP (1) EP1584104A4 (en)
JP (1) JP2006510196A (en)
AU (1) AU2003299614A1 (en)
WO (1) WO2004053945A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7410890B2 (en) 2002-12-12 2008-08-12 Tel Epion Inc. Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
WO2005079318A2 (en) 2004-02-14 2005-09-01 Epion Corporation Methods of forming doped and un-doped strained semiconductor and semiconductor films by gas-cluster ion irradiation
JP2008502150A (en) 2004-06-03 2008-01-24 エピオン コーポレーション Improved dual damascene integrated structure and method of manufacturing the same
US7514725B2 (en) 2004-11-30 2009-04-07 Spire Corporation Nanophotovoltaic devices
EP1787321A4 (en) * 2004-12-03 2008-12-03 Tel Epion Inc FORMATION OF ULTRA-THIN JUNCTIONS BY IRRADIATION WITH IONS OF GASEOUS AGGREGATES
TWI476292B (en) 2005-08-30 2015-03-11 尖端科技材料股份有限公司 Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US20070178678A1 (en) * 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US7566888B2 (en) 2007-05-23 2009-07-28 Tel Epion Inc. Method and system for treating an interior surface of a workpiece using a charged particle beam
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI386983B (en) 2010-02-26 2013-02-21 尖端科技材料股份有限公司 Method and apparatus for enhancing the lifetime and performance of an ion source in an ion implantation system
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
CN103201824B (en) 2010-08-30 2016-09-07 恩特格里斯公司 Preparation of compounds or intermediates thereof from solid materials and devices and methods for using the compounds and intermediates
JP5318137B2 (en) * 2011-03-22 2013-10-16 株式会社東芝 Method for producing multilayer film
TWI583442B (en) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 B2f4 manufacturing process
KR20200098716A (en) 2012-02-14 2020-08-20 엔테그리스, 아이엔씨. Carbon dopant gas and co-flow for implant beam and source life performance improvement
SG11201601015RA (en) 2013-08-16 2016-03-30 Entegris Inc Silicon implantation in substrates and provision of silicon precursor compositions therefor
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115527A (en) * 1980-02-15 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4370176A (en) * 1980-02-01 1983-01-25 Commissariat A L'energie Atomique Process for fast droping of semiconductors
WO2002052608A2 (en) * 2000-12-26 2002-07-04 Epion Corporation Charging control and dosimetry system for gas cluster ion beam

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53109475A (en) * 1977-03-07 1978-09-25 Hitachi Ltd Manufacture for semiconductor device
JPS58111324A (en) * 1981-12-25 1983-07-02 Hitachi Ltd Preparation of semiconductor device
JP2662321B2 (en) * 1991-05-31 1997-10-08 科学技術振興事業団 Surface treatment method using ultra-slow cluster ion beam
JPH0941138A (en) * 1995-07-31 1997-02-10 Res Dev Corp Of Japan Ion implantation method using gas cluster ion beam
US6251835B1 (en) * 1997-05-08 2001-06-26 Epion Corporation Surface planarization of high temperature superconductors
JP2003520393A (en) * 1999-12-10 2003-07-02 エピオン コーポレイション Ionizer for gas cluster ion beam formation
WO2002006557A1 (en) * 2000-07-14 2002-01-24 Epion Corporation Gcib size diagnostics and workpiece processing
US6831272B2 (en) * 2000-07-14 2004-12-14 Epion Corporation Gas cluster ion beam size diagnostics and workpiece processing
KR100445105B1 (en) * 2001-10-25 2004-08-21 주식회사 다산 씨.앤드.아이 Ultra surface smoothing device of ito thin film and method thereof using gas cluster ion beam
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4370176A (en) * 1980-02-01 1983-01-25 Commissariat A L'energie Atomique Process for fast droping of semiconductors
JPS56115527A (en) * 1980-02-15 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
WO2002052608A2 (en) * 2000-12-26 2002-07-04 Epion Corporation Charging control and dosimetry system for gas cluster ion beam

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ALLEM L P ET AL: "Gas-cluster ion-beam smoothing of chemo-mechanical-polish processed GaSb(100) substrates", THIRD INTERNATIONAL CONFERENCE ON ALTERNATIVE SUBSTRATE TECHNOLOGY, September 2002 (2002-09-01), Cancun, Mexico *
JOURNAL OF ELECTRONIC MATERIALS, WARRENDALE, PA, US, vol. 32, no. 8, 1 August 2003 (2003-08-01), pages 842 - 848, XP009132285, ISSN: 0361-5235 *
YAMADA I ET AL: "Materials processing by gas cluster ion beams", MATERIALS SCIENCE AND ENGINEERING R: REPORTS, ELSEVIER SEQUOIA S.A., LAUSANNE, CH LNKD- DOI:10.1016/S0927-796X(01)00034-1, vol. 34, no. 6, 30 October 2001 (2001-10-30), pages 231 - 295, XP004308527, ISSN: 0927-796X *

Also Published As

Publication number Publication date
AU2003299614A1 (en) 2004-06-30
EP1584104A2 (en) 2005-10-12
JP2006510196A (en) 2006-03-23
WO2004053945A3 (en) 2005-03-03
WO2004053945A2 (en) 2004-06-24
AU2003299614A8 (en) 2004-06-30

Similar Documents

Publication Publication Date Title
EP1584104A4 (en) RECRYSTALLIZATION OF SEMICONDUCTOR SUPERFICIAL FILMS BY AMAS ENERGETIC IRRADIATION
FR18C1024I2 (en) HETEROCYCLOCARBOXAMIDE DERIVATIVES
LU92517I2 (en) Delamanide and its pharmaceutically acceptable derivatives
PL374831A1 (en) Modified 2 'and 3'-nucleoside prodrugs for the treatment of Flaviviridae infections
UY27918A1 (en) BENZODIOXOL DERIVATIVES
NO20014960L (en) New methods of treatment
LU92513I2 (en) SOFOSBUVIR AND ITS PHARMACEUTICALLY ACCEPTABLE DERIVATIVES (SOLVALDI)
ITVR20020006A1 (en) ORTHOSIS FOR OSTOARTHRITIC KNEE
DE60310415D1 (en) THERAPEUTIC AEROSOL DEVICE
DK1562932T3 (en) 4 tetrazolyl-4-phenylpiperidine derivatives for the treatment of pain
DE50308694D1 (en) IRRADIATOR T
EP1551292A4 (en) METHOD FOR ENHANCED CONVECTION DISTRIBUTION OF THERAPEUTIC AGENTS
ITVR20020062A1 (en) ESTEMPORANEOUS PREPARATION OF ORGANIC PERIOXYACIDS STABLE OVER TIME
AU2003275330A8 (en) Flexible device for topical application of pdt
ATE369136T1 (en) THERAPEUTIC TREATMENT
NO20062599L (en) Process for the synthesis of perindopril and pharmaceutically acceptable salts thereof
EA200501900A1 (en) NEW METHOD OF SYNTHESIS PERINDOPRIL AND ITS PHARMACEUTICALLY ACCEPTABLE SALTS
EA200501925A1 (en) NEW METHOD OF SYNTHESIS PERINDOPRIL AND ITS PHARMACEUTICALLY ACCEPTABLE SALTS
ITMI20020986A1 (en) COMPOSITION BASED ON DICLOFENAC FOR THE TOPICAL TREATMENT OF AFFECTIONS OF THE OROPHARINGOUS CABLE
NO20040497L (en) Amidine derivatives for the treatment of amyloidosis
ITMI20020933A0 (en) PROCEDURE FOR THE SYNTHESIS OF CLOPIDOGREL
ZA200601426B (en) Novel method for the synthesis of perindopril and the pharmaceutically-acceptable salts thereof
NO20040662L (en) Use of GE 2270 factor A3 amide derivative for the treatment of acne.
PL379628A1 (en) Novel method for the synthesis of perindopril and the pharmaceutically-acceptable salts thereof
PL380410A1 (en) Method for the synthesis of perindopril and the pharmaceutically-acceptable salts thereof

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

17P Request for examination filed

Effective date: 20050905

RBV Designated contracting states (corrected)

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE FR GB

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: TEL EPION INC.

A4 Supplementary search report drawn up and despatched

Effective date: 20100427

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/265 20060101ALI20100421BHEP

Ipc: H01L 21/324 20060101ALI20100421BHEP

Ipc: H01L 21/302 20060101ALI20100421BHEP

Ipc: H01L 21/44 20060101ALI20100421BHEP

Ipc: H01L 21/26 20060101ALI20100421BHEP

Ipc: H01L 21/425 20060101AFI20050804BHEP

17Q First examination report despatched

Effective date: 20100823

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20110104