WO2004053945A3 - Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation - Google Patents

Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation Download PDF

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Publication number
WO2004053945A3
WO2004053945A3 PCT/US2003/039754 US0339754W WO2004053945A3 WO 2004053945 A3 WO2004053945 A3 WO 2004053945A3 US 0339754 W US0339754 W US 0339754W WO 2004053945 A3 WO2004053945 A3 WO 2004053945A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
dopant
crystallization
doping
surface film
Prior art date
Application number
PCT/US2003/039754
Other languages
French (fr)
Other versions
WO2004053945A2 (en
Inventor
Allen R Kirkpatrick
John J Hautala
Martin D Tabat
Thomas G Tetreault
Sean Kirkpatrick
Original Assignee
Epion Corp
Allen R Kirkpatrick
John J Hautala
Martin D Tabat
Thomas G Tetreault
Sean Kirkpatrick
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epion Corp, Allen R Kirkpatrick, John J Hautala, Martin D Tabat, Thomas G Tetreault, Sean Kirkpatrick filed Critical Epion Corp
Priority to EP03799903A priority Critical patent/EP1584104A4/en
Priority to AU2003299614A priority patent/AU2003299614A1/en
Priority to JP2004558211A priority patent/JP2006510196A/en
Publication of WO2004053945A2 publication Critical patent/WO2004053945A2/en
Publication of WO2004053945A3 publication Critical patent/WO2004053945A3/en
Priority to US11/150,698 priority patent/US7410890B2/en
Priority to US12/142,453 priority patent/US20080245974A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Method of gas-cluster ion beam 128 processing of damaged semiconductor films 308 for re-crystallization and/or for activating a dopant in a semiconductor film 308 with reduced dopant diffusion, and semiconductor devices formed using the method. The method is useful, for example, for restoring crystallinity and/or for electrically activating a dopant species after shallow dopant ion implantation for forming shallow junctions. In one embodiment of the method, dopant atoms incorporated into the gas-clusters produces shallow doping of a semiconductor 302 with simultaneous electrical activation of the dopant atoms and re-crystallization of the semiconductor.
PCT/US2003/039754 2002-12-12 2003-12-12 Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation WO2004053945A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP03799903A EP1584104A4 (en) 2002-12-12 2003-12-12 Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation
AU2003299614A AU2003299614A1 (en) 2002-12-12 2003-12-12 Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation
JP2004558211A JP2006510196A (en) 2002-12-12 2003-12-12 Recrystallization of semiconductor surface film by high energy cluster irradiation and semiconductor doping method
US11/150,698 US7410890B2 (en) 2002-12-12 2005-06-11 Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
US12/142,453 US20080245974A1 (en) 2002-12-12 2008-06-19 Method of introducing material into a substrate by gas-cluster ion beam irradiation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43386602P 2002-12-12 2002-12-12
US60/433,866 2002-12-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/080,800 Continuation-In-Part US7396745B2 (en) 2002-12-12 2005-03-11 Formation of ultra-shallow junctions by gas-cluster ion irradiation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/150,698 Continuation-In-Part US7410890B2 (en) 2002-12-12 2005-06-11 Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation

Publications (2)

Publication Number Publication Date
WO2004053945A2 WO2004053945A2 (en) 2004-06-24
WO2004053945A3 true WO2004053945A3 (en) 2005-03-03

Family

ID=32508036

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/039754 WO2004053945A2 (en) 2002-12-12 2003-12-12 Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation

Country Status (4)

Country Link
EP (1) EP1584104A4 (en)
JP (1) JP2006510196A (en)
AU (1) AU2003299614A1 (en)
WO (1) WO2004053945A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7410890B2 (en) 2002-12-12 2008-08-12 Tel Epion Inc. Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
US7396745B2 (en) 2004-12-03 2008-07-08 Tel Epion Inc. Formation of ultra-shallow junctions by gas-cluster ion irradiation
US7259036B2 (en) 2004-02-14 2007-08-21 Tel Epion Inc. Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products
JP2008502150A (en) 2004-06-03 2008-01-24 エピオン コーポレーション Improved dual damascene integrated structure and method of manufacturing the same
US7514725B2 (en) 2004-11-30 2009-04-07 Spire Corporation Nanophotovoltaic devices
TWI520905B (en) 2005-08-30 2016-02-11 安特格利斯公司 Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US20070178678A1 (en) * 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US7566888B2 (en) 2007-05-23 2009-07-28 Tel Epion Inc. Method and system for treating an interior surface of a workpiece using a charged particle beam
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI689467B (en) 2010-02-26 2020-04-01 美商恩特葛瑞斯股份有限公司 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
EP2612349A4 (en) 2010-08-30 2016-09-14 Entegris Inc Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
JP5318137B2 (en) 2011-03-22 2013-10-16 株式会社東芝 Method for producing multilayer film
TWI583442B (en) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 B2f4 manufacturing process
EP3267470A3 (en) 2012-02-14 2018-04-18 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
CN105637616A (en) 2013-08-16 2016-06-01 恩特格里斯公司 Silicon implantation in substrates and provision of silicon precursor compositions therefor
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251835B1 (en) * 1997-05-08 2001-06-26 Epion Corporation Surface planarization of high temperature superconductors
US20020036261A1 (en) * 2000-07-14 2002-03-28 Epion Corporation Gas cluster ion beam size diagnostics and workpiece processing
US20020070361A1 (en) * 2000-07-14 2002-06-13 Epion Corporation Gas cluster ion beam size diagnostics and workpiece processing
US20030109092A1 (en) * 2001-10-25 2003-06-12 Won-Kook Choi Surface smoothing device and method thereof
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53109475A (en) * 1977-03-07 1978-09-25 Hitachi Ltd Manufacture for semiconductor device
FR2475069A1 (en) * 1980-02-01 1981-08-07 Commissariat Energie Atomique METHOD FOR RAPID DOPING OF SEMICONDUCTORS
JPS56115527A (en) * 1980-02-15 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS58111324A (en) * 1981-12-25 1983-07-02 Hitachi Ltd Preparation of semiconductor device
JP2662321B2 (en) * 1991-05-31 1997-10-08 科学技術振興事業団 Surface treatment method using ultra-slow cluster ion beam
JPH0941138A (en) * 1995-07-31 1997-02-10 Res Dev Corp Of Japan Method for ion implantation with gas cluster ion beam
US6629508B2 (en) * 1999-12-10 2003-10-07 Epion Corporation Ionizer for gas cluster ion beam formation
US6646277B2 (en) * 2000-12-26 2003-11-11 Epion Corporation Charging control and dosimetry system for gas cluster ion beam

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251835B1 (en) * 1997-05-08 2001-06-26 Epion Corporation Surface planarization of high temperature superconductors
US20020036261A1 (en) * 2000-07-14 2002-03-28 Epion Corporation Gas cluster ion beam size diagnostics and workpiece processing
US20020070361A1 (en) * 2000-07-14 2002-06-13 Epion Corporation Gas cluster ion beam size diagnostics and workpiece processing
US20030109092A1 (en) * 2001-10-25 2003-06-12 Won-Kook Choi Surface smoothing device and method thereof
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1584104A4 *

Also Published As

Publication number Publication date
AU2003299614A1 (en) 2004-06-30
WO2004053945A2 (en) 2004-06-24
JP2006510196A (en) 2006-03-23
AU2003299614A8 (en) 2004-06-30
EP1584104A4 (en) 2010-05-26
EP1584104A2 (en) 2005-10-12

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