EP1584104A4 - Recristallisation de films superficiels de semi-conducteurs par irradiation energetique d'amas - Google Patents
Recristallisation de films superficiels de semi-conducteurs par irradiation energetique d'amasInfo
- Publication number
- EP1584104A4 EP1584104A4 EP03799903A EP03799903A EP1584104A4 EP 1584104 A4 EP1584104 A4 EP 1584104A4 EP 03799903 A EP03799903 A EP 03799903A EP 03799903 A EP03799903 A EP 03799903A EP 1584104 A4 EP1584104 A4 EP 1584104A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor
- doping
- crystallization
- surface film
- cluster irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000001953 recrystallisation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0812—Ionized cluster beam [ICB] sources
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43386602P | 2002-12-12 | 2002-12-12 | |
US433866P | 2002-12-12 | ||
PCT/US2003/039754 WO2004053945A2 (fr) | 2002-12-12 | 2003-12-12 | Recristallisation de films superficiels de semi-conducteurs par irradiation energetique d'amas |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1584104A2 EP1584104A2 (fr) | 2005-10-12 |
EP1584104A4 true EP1584104A4 (fr) | 2010-05-26 |
Family
ID=32508036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03799903A Withdrawn EP1584104A4 (fr) | 2002-12-12 | 2003-12-12 | Recristallisation de films superficiels de semi-conducteurs par irradiation energetique d'amas |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1584104A4 (fr) |
JP (1) | JP2006510196A (fr) |
AU (1) | AU2003299614A1 (fr) |
WO (1) | WO2004053945A2 (fr) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006062536A2 (fr) * | 2004-12-03 | 2006-06-15 | Epion Corporation | Formation de jonctions ultra-minces par irradiation avec des ions d'agregats gazeux |
US7410890B2 (en) | 2002-12-12 | 2008-08-12 | Tel Epion Inc. | Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation |
JP2007525838A (ja) | 2004-02-14 | 2007-09-06 | エピオン コーポレーション | ドープ済みおよび未ドープの歪み半導体の形成方法およびガスクラスタイオン照射による半導体薄膜の形成方法 |
US7759251B2 (en) | 2004-06-03 | 2010-07-20 | Tel Epion Corporation | Dual damascene integration structure and method for forming improved dual damascene integration structure |
US7514725B2 (en) | 2004-11-30 | 2009-04-07 | Spire Corporation | Nanophotovoltaic devices |
JP5591470B2 (ja) | 2005-08-30 | 2014-09-17 | アドバンスト テクノロジー マテリアルズ,インコーポレイテッド | 代替フッ化ホウ素前駆体を使用するホウ素イオン注入および注入のための大きな水素化ホウ素の形成 |
US20070178678A1 (en) * | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
US7566888B2 (en) | 2007-05-23 | 2009-07-28 | Tel Epion Inc. | Method and system for treating an interior surface of a workpiece using a charged particle beam |
US20110021011A1 (en) | 2009-07-23 | 2011-01-27 | Advanced Technology Materials, Inc. | Carbon materials for carbon implantation |
US8138071B2 (en) | 2009-10-27 | 2012-03-20 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US8062965B2 (en) | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US8779383B2 (en) | 2010-02-26 | 2014-07-15 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
TWI689467B (zh) | 2010-02-26 | 2020-04-01 | 美商恩特葛瑞斯股份有限公司 | 用以增進離子植入系統中之離子源的壽命及性能之方法與設備 |
CN106237934B (zh) | 2010-08-30 | 2019-08-27 | 恩特格里斯公司 | 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法 |
JP5318137B2 (ja) * | 2011-03-22 | 2013-10-16 | 株式会社東芝 | 多層膜の製造方法 |
TWI583442B (zh) | 2011-10-10 | 2017-05-21 | 恩特葛瑞斯股份有限公司 | B2f4之製造程序 |
CN108565198A (zh) | 2012-02-14 | 2018-09-21 | 恩特格里斯公司 | 用于改善注入束和源寿命性能的碳掺杂剂气体和协流 |
CN105637616A (zh) | 2013-08-16 | 2016-06-01 | 恩特格里斯公司 | 基板中的硅注入及提供其硅前体组合物 |
US9123879B2 (en) | 2013-09-09 | 2015-09-01 | Masahiko Nakayama | Magnetoresistive element and method of manufacturing the same |
US9368717B2 (en) | 2013-09-10 | 2016-06-14 | Kabushiki Kaisha Toshiba | Magnetoresistive element and method for manufacturing the same |
US9231196B2 (en) | 2013-09-10 | 2016-01-05 | Kuniaki SUGIURA | Magnetoresistive element and method of manufacturing the same |
US9385304B2 (en) | 2013-09-10 | 2016-07-05 | Kabushiki Kaisha Toshiba | Magnetic memory and method of manufacturing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56115527A (en) * | 1980-02-15 | 1981-09-10 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
US4370176A (en) * | 1980-02-01 | 1983-01-25 | Commissariat A L'energie Atomique | Process for fast droping of semiconductors |
WO2002052608A2 (fr) * | 2000-12-26 | 2002-07-04 | Epion Corporation | Systeme de dosimetrie et de regulation de charge pour faisceau d'ions d'agregats gazeux |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53109475A (en) * | 1977-03-07 | 1978-09-25 | Hitachi Ltd | Manufacture for semiconductor device |
JPS58111324A (ja) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | 半導体装置の製造方法 |
JP2662321B2 (ja) * | 1991-05-31 | 1997-10-08 | 科学技術振興事業団 | 超低速クラスターイオンビームによる表面処理方法 |
JPH0941138A (ja) * | 1995-07-31 | 1997-02-10 | Res Dev Corp Of Japan | ガスクラスターイオンビームによるイオン注入法 |
US6251835B1 (en) * | 1997-05-08 | 2001-06-26 | Epion Corporation | Surface planarization of high temperature superconductors |
US6629508B2 (en) * | 1999-12-10 | 2003-10-07 | Epion Corporation | Ionizer for gas cluster ion beam formation |
US6770874B2 (en) * | 2000-07-14 | 2004-08-03 | Epion Corporation | Gas cluster ion beam size diagnostics and workpiece processing |
EP1305452A4 (fr) * | 2000-07-14 | 2007-12-26 | Tel Epion Inc | Procede et dispositif servant a diagnostiquer les dimensions d'agregats ionises preformes en phase gazeuse et a traiter une piece |
KR100445105B1 (ko) * | 2001-10-25 | 2004-08-21 | 주식회사 다산 씨.앤드.아이 | 가스 클러스터 이온빔을 이용한 아이.티.오 박막 표면처리시스템 및 그 방법 |
US20040002202A1 (en) * | 2002-06-26 | 2004-01-01 | Horsky Thomas Neil | Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions |
-
2003
- 2003-12-12 AU AU2003299614A patent/AU2003299614A1/en not_active Abandoned
- 2003-12-12 EP EP03799903A patent/EP1584104A4/fr not_active Withdrawn
- 2003-12-12 WO PCT/US2003/039754 patent/WO2004053945A2/fr active Application Filing
- 2003-12-12 JP JP2004558211A patent/JP2006510196A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4370176A (en) * | 1980-02-01 | 1983-01-25 | Commissariat A L'energie Atomique | Process for fast droping of semiconductors |
JPS56115527A (en) * | 1980-02-15 | 1981-09-10 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
WO2002052608A2 (fr) * | 2000-12-26 | 2002-07-04 | Epion Corporation | Systeme de dosimetrie et de regulation de charge pour faisceau d'ions d'agregats gazeux |
Non-Patent Citations (3)
Title |
---|
ALLEM L P ET AL: "Gas-cluster ion-beam smoothing of chemo-mechanical-polish processed GaSb(100) substrates", THIRD INTERNATIONAL CONFERENCE ON ALTERNATIVE SUBSTRATE TECHNOLOGY, September 2002 (2002-09-01), Cancun, Mexico * |
JOURNAL OF ELECTRONIC MATERIALS, WARRENDALE, PA, US, vol. 32, no. 8, 1 August 2003 (2003-08-01), pages 842 - 848, XP009132285, ISSN: 0361-5235 * |
YAMADA I ET AL: "Materials processing by gas cluster ion beams", MATERIALS SCIENCE AND ENGINEERING R: REPORTS, ELSEVIER SEQUOIA S.A., LAUSANNE, CH LNKD- DOI:10.1016/S0927-796X(01)00034-1, vol. 34, no. 6, 30 October 2001 (2001-10-30), pages 231 - 295, XP004308527, ISSN: 0927-796X * |
Also Published As
Publication number | Publication date |
---|---|
JP2006510196A (ja) | 2006-03-23 |
EP1584104A2 (fr) | 2005-10-12 |
AU2003299614A8 (en) | 2004-06-30 |
WO2004053945A3 (fr) | 2005-03-03 |
WO2004053945A2 (fr) | 2004-06-24 |
AU2003299614A1 (en) | 2004-06-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK |
|
17P | Request for examination filed |
Effective date: 20050905 |
|
RBV | Designated contracting states (corrected) |
Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR |
|
DAX | Request for extension of the european patent (deleted) | ||
RBV | Designated contracting states (corrected) |
Designated state(s): DE FR GB |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: TEL EPION INC. |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20100427 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/265 20060101ALI20100421BHEP Ipc: H01L 21/324 20060101ALI20100421BHEP Ipc: H01L 21/302 20060101ALI20100421BHEP Ipc: H01L 21/44 20060101ALI20100421BHEP Ipc: H01L 21/26 20060101ALI20100421BHEP Ipc: H01L 21/425 20060101AFI20050804BHEP |
|
17Q | First examination report despatched |
Effective date: 20100823 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20110104 |