JP2006510196A - 高エネルギー・クラスタ照射による半導体表面皮膜の再結晶化及び半導体のドーピング方法 - Google Patents

高エネルギー・クラスタ照射による半導体表面皮膜の再結晶化及び半導体のドーピング方法 Download PDF

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JP2006510196A
JP2006510196A JP2004558211A JP2004558211A JP2006510196A JP 2006510196 A JP2006510196 A JP 2006510196A JP 2004558211 A JP2004558211 A JP 2004558211A JP 2004558211 A JP2004558211 A JP 2004558211A JP 2006510196 A JP2006510196 A JP 2006510196A
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gas cluster
cluster ion
dopant
gas
semiconductor
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Japanese (ja)
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カークパトリック，アレン，アール．
ハウタラ，ジョン，ジェイ．
タバツ，マーティン，ディー．
テトレオウルト，トーマス，ジー．
カークパトリック，シーン
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エピオン コーポレーション
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
JP2004558211A 2002-12-12 2003-12-12 高エネルギー・クラスタ照射による半導体表面皮膜の再結晶化及び半導体のドーピング方法 Pending JP2006510196A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43386602P 2002-12-12 2002-12-12
PCT/US2003/039754 WO2004053945A2 (fr) 2002-12-12 2003-12-12 Recristallisation de films superficiels de semi-conducteurs par irradiation energetique d'amas

Publications (1)

Publication Number Publication Date
JP2006510196A true JP2006510196A (ja) 2006-03-23

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JP2004558211A Pending JP2006510196A (ja) 2002-12-12 2003-12-12 高エネルギー・クラスタ照射による半導体表面皮膜の再結晶化及び半導体のドーピング方法

Country Status (4)

Country Link
EP (1) EP1584104A4 (fr)
JP (1) JP2006510196A (fr)
AU (1) AU2003299614A1 (fr)
WO (1) WO2004053945A2 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009524907A (ja) * 2006-01-28 2009-07-02 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入方法およびそれに利用されるイオン源
JP2012199430A (ja) * 2011-03-22 2012-10-18 Toshiba Corp 多層膜の製造方法
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006062536A2 (fr) * 2004-12-03 2006-06-15 Epion Corporation Formation de jonctions ultra-minces par irradiation avec des ions d'agregats gazeux
US7410890B2 (en) 2002-12-12 2008-08-12 Tel Epion Inc. Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
JP2007525838A (ja) 2004-02-14 2007-09-06 エピオン コーポレーション ドープ済みおよび未ドープの歪み半導体の形成方法およびガスクラスタイオン照射による半導体薄膜の形成方法
US7759251B2 (en) 2004-06-03 2010-07-20 Tel Epion Corporation Dual damascene integration structure and method for forming improved dual damascene integration structure
US7514725B2 (en) 2004-11-30 2009-04-07 Spire Corporation Nanophotovoltaic devices
JP5591470B2 (ja) 2005-08-30 2014-09-17 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド 代替フッ化ホウ素前駆体を使用するホウ素イオン注入および注入のための大きな水素化ホウ素の形成
US7566888B2 (en) 2007-05-23 2009-07-28 Tel Epion Inc. Method and system for treating an interior surface of a workpiece using a charged particle beam
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI689467B (zh) 2010-02-26 2020-04-01 美商恩特葛瑞斯股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
CN106237934B (zh) 2010-08-30 2019-08-27 恩特格里斯公司 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
CN108565198A (zh) 2012-02-14 2018-09-21 恩特格里斯公司 用于改善注入束和源寿命性能的碳掺杂剂气体和协流
CN105637616A (zh) 2013-08-16 2016-06-01 恩特格里斯公司 基板中的硅注入及提供其硅前体组合物

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53109475A (en) * 1977-03-07 1978-09-25 Hitachi Ltd Manufacture for semiconductor device
JPS56115527A (en) * 1980-02-15 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS56122127A (en) * 1980-02-01 1981-09-25 Commissariat Energie Atomique Method of doping semiconductor at high speed
JPS58111324A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体装置の製造方法
JPH04354865A (ja) * 1991-05-31 1992-12-09 Res Dev Corp Of Japan 超低速クラスターイオンビームによる表面処理方法
JPH0941138A (ja) * 1995-07-31 1997-02-10 Res Dev Corp Of Japan ガスクラスターイオンビームによるイオン注入法
WO2001043160A1 (fr) * 1999-12-10 2001-06-14 Epion Corporation Ionisateur pour formation de faisceau d'ions a amas gazeux

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251835B1 (en) * 1997-05-08 2001-06-26 Epion Corporation Surface planarization of high temperature superconductors
US6770874B2 (en) * 2000-07-14 2004-08-03 Epion Corporation Gas cluster ion beam size diagnostics and workpiece processing
EP1305452A4 (fr) * 2000-07-14 2007-12-26 Tel Epion Inc Procede et dispositif servant a diagnostiquer les dimensions d'agregats ionises preformes en phase gazeuse et a traiter une piece
WO2002052608A2 (fr) * 2000-12-26 2002-07-04 Epion Corporation Systeme de dosimetrie et de regulation de charge pour faisceau d'ions d'agregats gazeux
KR100445105B1 (ko) * 2001-10-25 2004-08-21 주식회사 다산 씨.앤드.아이 가스 클러스터 이온빔을 이용한 아이.티.오 박막 표면처리시스템 및 그 방법
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53109475A (en) * 1977-03-07 1978-09-25 Hitachi Ltd Manufacture for semiconductor device
JPS56122127A (en) * 1980-02-01 1981-09-25 Commissariat Energie Atomique Method of doping semiconductor at high speed
JPS56115527A (en) * 1980-02-15 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS58111324A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体装置の製造方法
JPH04354865A (ja) * 1991-05-31 1992-12-09 Res Dev Corp Of Japan 超低速クラスターイオンビームによる表面処理方法
JPH0941138A (ja) * 1995-07-31 1997-02-10 Res Dev Corp Of Japan ガスクラスターイオンビームによるイオン注入法
WO2001043160A1 (fr) * 1999-12-10 2001-06-14 Epion Corporation Ionisateur pour formation de faisceau d'ions a amas gazeux

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009524907A (ja) * 2006-01-28 2009-07-02 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入方法およびそれに利用されるイオン源
JP2012199430A (ja) * 2011-03-22 2012-10-18 Toshiba Corp 多層膜の製造方法
US9082961B2 (en) 2011-03-22 2015-07-14 Kabushiki Kaisha Toshiba Method of manufacturing multilayer film
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9406871B2 (en) 2013-09-09 2016-08-02 Kabushiki Kaisha Toshiba Magnetoresistive element and method of manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same

Also Published As

Publication number Publication date
EP1584104A4 (fr) 2010-05-26
EP1584104A2 (fr) 2005-10-12
AU2003299614A8 (en) 2004-06-30
WO2004053945A3 (fr) 2005-03-03
WO2004053945A2 (fr) 2004-06-24
AU2003299614A1 (en) 2004-06-30

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