EP1584104A2 - Recristallisation de films superficiels de semi-conducteurs par irradiation energetique d'amas - Google Patents

Recristallisation de films superficiels de semi-conducteurs par irradiation energetique d'amas

Info

Publication number
EP1584104A2
EP1584104A2 EP03799903A EP03799903A EP1584104A2 EP 1584104 A2 EP1584104 A2 EP 1584104A2 EP 03799903 A EP03799903 A EP 03799903A EP 03799903 A EP03799903 A EP 03799903A EP 1584104 A2 EP1584104 A2 EP 1584104A2
Authority
EP
European Patent Office
Prior art keywords
gas
cluster ion
dopant
semiconductor
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03799903A
Other languages
German (de)
English (en)
Other versions
EP1584104A4 (fr
Inventor
Allen R. Kirkpatrick
John J. Hautala
Martin D. Tabat
Thomas G. Tetreault
Sean Kirkpatrick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TEL Epion Inc
Original Assignee
TEL Epion Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TEL Epion Inc filed Critical TEL Epion Inc
Publication of EP1584104A2 publication Critical patent/EP1584104A2/fr
Publication of EP1584104A4 publication Critical patent/EP1584104A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources

Definitions

  • This invention relates generally to the doping and/or re- crystallization of semiconductor surfaces and, more particularly to the re-crystallization of a semiconductor surface by energetic gas-cluster ion irradiation and to the impurity doping of semiconductor surface with self-annealing or self-activation by energetic gas-cluster ion irradiation.
  • semiconductor materials such as silicon, germanium and gallium arsenide and other semiconductors are contingent upon the purity and crystal structure of the semiconductor material.
  • Dopant atoms incorporated into semiconductor materials for the purpose of altering electrical properties, forming electronic junctions, etc., are often introduced into a semiconductor surface by conventional ion implantation.
  • ionized dopant atoms are physically deposited into a crystalline semiconductor material, but it is well known that, in doing so, the crystal lattice of the semiconductor becomes damaged by the implantation process.
  • the semiconductor crystal lattice structure In order for the implanted dopant atoms to become electrically active within the semiconductor and to restore the desirable crystallinity of the semiconductor, the semiconductor crystal lattice structure must be restored and the implanted dopant atoms must occupy lattice sites within the restored crystal lattice by substitution.
  • Processes typically employed to produce crystal lattice restoration and electrical activation of implanted dopant atoms include elevated temperature thermal annealing, pulsed laser beam annealing and pulsed electron beam annealing.
  • an important requirement for the introduction of dopants into the semiconductor surface is that the maximum depth to which the dopant has penetrated after completion of the lattice re-crystallization and dopant activation processes must be kept very shallow, often only a few hundred Angstroms or less.
  • very low energy conventional ion implantation such shallow introduction of dopant is feasible by using very low implantation energies on the order of less than 1000 eN or in some cases even less than 200 eN.
  • diffusion of the shallow dopant atoms results in deeper redistribution of the dopant atoms and thus in formation of deeper junctions than desirable.
  • gas-cluster ion beam for etching, cleaning, and smoothing surfaces
  • GCIB gas-cluster ion beam
  • gas- clusters are nano-sized aggregates of materials that are gaseous under conditions of standard temperature and pressure. Such clusters may consist of loosely bound or more tightly bound aggregate s of molecules numbering from a few to several thousand molecules. The clusters can be ionized by electron bombardment or other means, permitting them to be formed into directed beams of controllable energy.
  • Such ions each typically carry positive charges of q-e (where e is the magnitude of the electronic charge and q is an integer of from one to several representing the charge state of the cluster ion).
  • the larger sized clusters are often the most useful because of their ability to carry substantial energy per cluster ion, while yet having only modest energy per molecule.
  • the clusters disintegrate on impact, with each individual molecule carrying only a small fraction of the total cluster energy. Consequently the impact effects of large clusters are substantial, but are limited to a very shallow surface region. This makes ion clusters effective for a variety of surface modification processes, without the tendency to produce deeper subsurface damage characteristic of conventional ion beam processing.
  • a still further object of this invention is to provide for the production of an ultra-shallow junction by the introduction of dopant atoms in the ultra-shallow sub-surface regions of a semiconductor material and for the activation of the dopant and for the re- crystallization of the semiconductor surface by irradiation of energetic gas-cluster ions comprising dopant atoms or comprising dopant and inert atoms.
  • the dimensions of a target impact zone are dependent on the energy of the cluster but are of the order of the cross- sectional dimensions of the impacting cluster and are small, for example roughly 30 Angstroms in diameter for an ionic cluster comprised of 1000 atoms.
  • an intense thermal transient occurs within the target material at the impact site.
  • the thermal transient dissipates as energy is lost from the impact zone by conduction deeper into the target. Duration of the thermal transient is determined by the conductivity of the target material but will typically be less than 10 "6 second.
  • a volume of the target surface can momentarily reach temperatures of many hundreds to several thousands of degrees Kelvin.
  • impact of a cluster carrying 10 keN total energy is estimated to be capable of producing a momentary temperature increase of about 2000 degrees Kelvin throughout a hemispherical zone extending to almost 100 Angstroms below a silicon surface.
  • the affected zone cools from below the surface back to the surface.
  • a damaged crystal lattice condition such as that caused by ion implantation of dopant atoms
  • the transient temperature conditions produced by energetic cluster impact can be employed to cause recovery of the damaged lattice.
  • a sufficient thermal transient must be created in a volume extending through the damaged region to the undamaged silicon crystal below.
  • cooling must proceed from the undamaged crystal lattice below the damaged layer back through the damage layer to the surface.
  • dopant atoms Upon restoration of the crystal lattice within the damaged region, dopant atoms will become incorporated into lattice sites and electrical activation will occur.
  • a gas containing an appropriate semiconductor dopant atom such as boron
  • an important requirement for the introduction of dopants into the semiconductor surface is that the maximum depth to which the dopant has penetrated after completion of the lattice re-crystallization and dopant activation processes must be kept very shallow, often only a few hundred Angstroms or less.
  • the depth to which the effects produced by energetic gas-cluster impact can be controlled by controlling the energy of the impinging gas-cluster ion beam. Consequently the energetic gas- cluster methods which have been described for semiconductor annealing and dopant activation, or for dopant introduction and self- annealing, can facilitate very shallow resulting depth of the introduced and activated dopants.
  • Figure 1 is a schematic showing the basic elements of a prior art GCIB processing apparatus that uses an electrostatically scanned beam;
  • Figure 2 is a schematic showing the basic elements of a prior art GCIB processing apparatus that uses a stationary beam with mechanical scanning of the workpiece;
  • Figure 3 is a schematic of a portion of a semiconductor wafer with a damaged and/or doped surface film;
  • Figure 4 is a schematic of a portion of a semiconductor wafer with a damaged and doped surface film during gas-cluster ion beam irradiation according to an embodiment of the invention
  • Figure 5 is a schematic enlarging a portion of the semiconductor wafer from Figure 4, showing additional detail;
  • Figure 6 is a schematic of a portion of a semiconductor wafer, showing re-crystallization and electrical activation of a region-impacted by a gas-cluster ion beam, according to the invention
  • Figure 7 is a schematic of a portion of a semiconductor wafer, showing re-crystallization and electrical activation of surface regions impacted by many gas-cluster ions;
  • Figure 8 is a schematic of a portion of a semiconductor wafer, showing re-crystallization and electrical activation of surface film after completion of gas-cluster ion beam processing according to the invention
  • Figure 9 is a schematic of a portion of a semiconductor wafer being impacted by a gas-cluster ion comprising a mixture of dopant gas and electrically inert gas molecules, according to an embodiment of the invention.
  • Figure 10 is a schematic enlarging a portion of the semiconductor wafer from Figure 9, showing additional detail
  • Figure 11 is a schematic of a portion of a semiconductor wafer, showing doping with re-crystallization and electrical activation of a region-impacted by a gas-cluster ion beam, according to an embodiment of the invention.
  • Figure 12 is a schematic of a portion of a semiconductor wafer, showing doping with re-crystallization and electrical activation of surface film after completion of gas-cluster ion beam processing according to an embodiment of the invention.
  • FIG. 1 shows schematically of the basic elements of a typical configuration for a GCIB processing apparatus 100 of a form known in prior art but adapted for practice of the present invention, and which may be described as follows: a vacuum vessel 102 is divided into three communicating chambers, a source chamber 104, an ionization/acceleration chamber 106, and a processing chamber 108. The three chambers are evacuated to suitable operating pressures by vacuum pumping systems 146a, 146b, and 146c, respectively.
  • a condensable source gas 112 (for example, argon or N 2 ) stored in a gas storage cylinder 111 is admitted under pressure through gas metering valve 113 and gas feed tube 114 into stagnation chamber 116 and is ejected into the substantially lower pressure vacuum through a properly shaped nozzle 110.
  • a supersonic gas jet 118 results. Cooling, which results from the expansion in the jet, causes a portion of the gas jet 118 to condense into clusters, each consisting of from several to several thousand weakly bound atoms or molecules.
  • a gas skimmer aperture 120 partially separates the gas molecules that have not condensed into a cluster jet from the cluster jet so as to minimize pressure in the downstream regions where such higher pressures would be detrimental (e.g., ionizer 122, high voltage electrodes 126, and processing chamber 108).
  • Suitable condensable source gases 112 include, but are not necessarily limited to argon, nitrogen, carbon dioxide, oxygen, and other gases.
  • the ionizer 122 is typically an electron impact ionizer that produces thermoelectrons from one or more incandescent filaments 124 and accelerates and directs the electrons causing them to collide with the gas-clusters in the gas jet 118, where the jet passes through the ionizer 122.
  • the electron impact ejects electrons from the clusters, causing a portion the clusters to become positively ionized.
  • a set of suitably biased high voltage electrodes 126 extracts the cluster ions from the ionizer, forming a gas cluster ion beam (GCIB), then accelerates them to a desired energy (typically from 1 keN to several tens of keN) and focuses them to form a GCIB 128.
  • Filament power supply 136 provides filament voltage N to heat the ionizer filament 124.
  • Anode power supply 134 provides anode voltage N A to accelerate thermoelectrons emitted from filament 124 to cause them to irradiate the cluster containing gas jet 118 to produce ions.
  • Extraction power supply 138 provides extraction voltage N E to bias a high voltage electrode to extract ions from the ionizing region of ionizer 122 and to form a GCIB 128.
  • Accelerator power supply 140 provides acceleration voltage VA CC to bias a high voltage electrode with respect to the ionizer 122 so as to result in a total GCIB acceleration energy equal to N Acc electron volts (eN).
  • One or more lens power supplies (142 and 144 shown for example) may be provided to bias high voltage electrodes with focusing voltages (V and N L2 for example) to focus the GCIB 128.
  • a workpiece 152 which may be a semiconductor wafer or other workpiece to be processed by GCIB processing, is held on a workpiece holder 150, disposed in the path of the GCIB 128. Since most applications contemplate the processing of large workpieces with spatially uniform results, a scanning system is desirable to uniformly scan the GCIB 128 across large areas to produce spatially homogeneous results. Two pairs of orthogonally oriented electrostatic scan plates 130 and 132 can be utilized to produce a raster or other scanning pattern across the desired processing area. When beam scanning is performed, the GCIB 128 is converted into a scanned GCIB 148, which scans the entire surface of workpiece 152.
  • FIG. 2 shows a schematic of the basic elements of a prior art mechanically scanning GCIB processing apparatus 200 adapted for use in the present invention having a stationary beam with a mechanically scanned workpiece 152, and having a conventional faraday cup for beam measurement and a conventional thermionic neutralizer.
  • GCIB formation is similar to as shown in Figure 1, except there is additional provision for an optional second source gas 222 (typically different from the source gas 112) stored in a gas storage cylinder 221 with a gas metering valve 223 and connecting through gas feed tube 114 into stagnation chamber 116.
  • This arrangement allows for controllably selecting between two differing source gasses 112 and 222 or for controllably forming a mixture of two source gasses for use in forming gas-clusters.
  • the GCIB 128 is stationary (not electrostatically scanned as in the GCIB processing apparatus 100) and the workpiece 152 is mechanically scanned through the GCIB 128 to distribute the effects of the GCIB 128 over a surface of the workpiece 152.
  • An X-scan actuator 202 provides linear motion of the workpiece holder 150 in the direction of X-scan motion 208 (into and out of the plane of the paper).
  • a Y-scan actuator 204 provides linear motion of the workpiece holder 150 in the direction of Y-scan motion 210, which is typically orthogonal to the X-scan motion 208.
  • the combination of X-scanning and Y-scanning motions moves the workpiece 152, held by the workpiece holder 150 in a raster-like scanning motion through GCIB 128 to cause a uniform irradiation of a surface of the workpiece 152 by the GCIB 128 for uniform processing of the workpiece 152.
  • the workpiece holder 150 disposes the workpiece 152 at an angle with respect to the axis of the GCIB 128 so that the GCIB 128 has an angle of beam incidence 206 with respect to the workpiece 152 surface.
  • the angle of beam incidence 206 may be 90 degrees or some other angle, but is typically 90 degrees or very near 90 degrees.
  • the workpiece 152 held by workpiece holder 150 moves from the position shown to the alternate position "A", indicated by the designators 152A and 150A respectively. Notice that in moving between the two positions, the workpiece 152 is scanned through the GCIB 128 and in both extreme positions, is moved completely out of the path of the GCIB 128 (over-scanned). Though not shown explicitly in Figure 2, similar scamiing and over- scan is performed in the (typically) orthogonal X-scan motion 208 direction (in and out of the plane of the paper).
  • a beam current sensor 218 is disposed beyond the workpiece holder 150 in the path of the GCIB 128 so as to intercept a sample of the GCIB 128 when the workpiece holder 150 is scanned out of the path of the GCIB 128.
  • the beam current sensor 218 is typically a faraday cup or the like, closed except for a beam-entry opening, and is affixed to the wall of the vacuum vessel 102 with an electrically insulating mount 212.
  • a controller 220 which may be a microcomputer based controller connects to the X-scan actuator 202 and the Y-scan actuator 204 through electrical cable 216 and controls the X-scan actuator 202 and the Y-scan actuator 204 so as to place the workpiece 152 into or out of the GCIB 128 and to scan the workpiece 152 uniformly relative to the GCIB 128 to achieve uniform processing of the workpiece 152 by the GCIB 128.
  • Controller 220 receives the sampled beam current collected by the beam current sensor 218 by way of lead 214 and thereby monitors the GCIB and controls the GCIB dose received by the workpiece 152 by removing the workpiece 152 from the GCIB 128 when a predetermined desired dose has been delivered.
  • Figure 3 is a schematic cross-section view 300 of a semiconductor wafer portion with a thickness 302 with a damaged and/or doped surface film 308.
  • the figure is not drawn to scale.
  • the bulk semiconductor 304 is typically a single crystal material with a high degree of crystallinity and has a surface 306 with the damaged and/or doped film having a thickness 310.
  • the damaged and/or doped film 308 is common feature of semiconductor wafers during various stages of typical integrated circuit or semiconductor device fabrication.
  • a damaged and/or doped film 308 having a thickness 310 which may be on the order of a few tens to several tens of Angstroms, exists adjacent the surface 306 of the semiconductor wafer 302.
  • the damage in the damaged and/or doped film 308 arises from radiation damage during an ion implantation step and typically comprises crystalline lattice damage, which may be of any degree from modest to extreme, even including complete amorphization of the previously crystalline material.
  • the film contains dopant atoms of a donor or acceptor species deposited by the ion implantation process (for example if the bulk semiconductor is silicon, boron, phosphorous, arsenic, and antimony are some typical dopant species). It is usually desired that after ion implantation of dopants, any damage to crystallinity should be repaired and the implanted dopant atoms should be placed into substitutional sites in the restored crystalline lattice in order to effect their electrical activity (activation) in the semiconductor.
  • a donor or acceptor species for example if the bulk semiconductor is silicon, boron, phosphorous, arsenic, and antimony are some typical dopant species.
  • annealing In the prior art, such re-crystallization and activation is sometimes referred to as annealing and has been typically been performed by means of a process such as heating in a furnace, treating with a rapid optical or thermal pulse, irradiation with a laser or electron beam, etc. Such process typically result in a period of heating of the implanted film with subsequent re-crystallization of the damaged semiconductor and with most of the dopant atoms achieving substitutional lattice sites and electrical activation. All these annealing processes have a drawback, in that they result in diffusion of many of the dopant atoms to depths considerably deeper than the as-implanted film thickness 310.
  • a first embodiment of this invention provides a method of re-crystallizing and electrically activating (annealing) such a damaged and doped film with dramatically improved control of depth redistribution of the dopant atoms as compared to prior art methods.
  • Figure 4 is a schematic cross-section view 350 of a semiconductor wafer portion with a thickness 302 with a damaged and/or doped film 308 similar to the prior art type illustrated in Figure 3, but, shown at an early stage of processing by gas-cluster ion beam irradiation according to the first embodiment of the invention.
  • a gas-cluster ion beam processing system which may be, for example, of the type shown in Figure 1 or in Figure 2 is employed to direct a gas-cluster ion beam onto the surface of a semiconductor wafer 302.
  • Gas-cluster ion 352 comprised of a gas or gasses that is/are not a dopant for the bulk semiconductor 304 is utilized in formation of the gas-cluster ion beam.
  • Gas-cluster ions such as the gas-cluster ion 352, for example, follow trajectories such as trajectory 354, for example, impacting the surface 306 of the semiconductor wafer.
  • Such a gas-cluster ion 352 has an energy preselected and controlled by the gas-cluster ion beam processing system and its operational and control parameters.
  • the gas-cluster ion 352 Upon impact with the surface 306 of the semiconductor wafer 302, the gas-cluster ion 352 forms a gas-cluster ion-impact region 360.
  • the pre-selected and controlled energy of the gas-cluster ion 352 is such as to provide a gas-cluster ion- impact region 360 that extends through the damaged and/or doped film 308 into the bulk semiconductor 304.
  • the gas-cluster ion-impact region 360 comprises two portions, a gas-cluster ion-impact region portion 356 within the damaged and/or doped film 308 and a gas- cluster ion-impact region portion 358 within the bulk semiconductor 304.
  • FIG 5 is a schematic 400 enlarging a portion ofthe semiconductor wafer 302 shown in Figure 4, showing additional detail.
  • Gas-cluster ion 352 is comprised of multiple molecules (one molecule 408 is indicated for example) comprising a gas or gasses that is/are not a dopant for the bulk semiconductor 304. Such molecule(s) 408 may be, for example - not for limitation, molecules of argon or other inert gas.
  • the gas-cluster ion-impact region 360 has a boundary 402. The volume ofthe gas-cluster ion-impact region 360 and hence it's depth of penetration ofthe surface 306 of the semiconductor is dependent on the preselected and controlled energy ofthe gas-cluster ion 352.
  • the gas-cluster ion Upon impact of an energetic gas-cluster ion 352 on the surface 306, the gas-cluster ion dissociates and the individual gas molecule(s) 408 then become free to recoil and escape from the surface ofthe target. Other than a small energy carried away by the escaping individual gas atoms, the total energy ofthe energetic gas-cluster ion becomes deposited into the gas-cluster ion-impact region 360.
  • the dimensions ofthe gas-cluster ion-impact region 360 are dependent on the energy of the cluster but are of the order of the cross-sectional dimensions ofthe impacting gas-cluster ion and are small, for example roughly 30 - 100 Angstroms in diameter, depending on the preselected gas-cluster ion energy.
  • gas-cluster ion-impact region 360 material can momentarily reach temperatures of many hundreds to several thousands of degrees Kelvin.
  • impact of a gas-cluster ion 352 when carrying 10 keN total energy is estimated to be capable of producing a momentary temperature increase of about 2000 degrees Kelvin throughout an gas-cluster ion-impact region 360 extending to almost 100 Angstroms below the surface 306.
  • thermal agitation is high enough to possibly melt the material in the gas-cluster ion-impact region 360.
  • Figure 6 is a schematic 450 of a portion of a semiconductor wafer 302, showing re-crystallization and electrical activation of a region 452 impacted by a gas-cluster ion, according to the first embodiment ofthe invention.
  • the portions 356 and 358 ofthe gas- cluster ion-impact region 360 of Figure 5 become all or at least partially re-crystallized and dopant is activated to form the region 452.
  • Figure 7 is a schematic 500 of a portion of a semiconductor wafer 302, being processed by gas-cluster ion beam according to the method ofthe first embodiment ofthe invention showing re- crystallization and electrical activation of surface regions impacted by many gas-cluster ions.
  • larger and larger regions 502 ofthe original damaged and/or doped film 308 experience re-crystallization and electrical activation of dopant.
  • Islands 504 ofthe original damaged and/or doped film 308 shrink and are gradually replaced by the re-crystallized and activated material.
  • the re- crystallized and activated regions 502 extend to a depth 506 below the surface 306 and depth 506 is somewhat greater than the original thickness 310 ofthe original damaged and/or doped film 308.
  • the depth 506 is determined by the energy ofthe gas-cluster in beam used for processing and may be predetermined and pre-selected either by conventional modeling or by experimentally processing a matrix of gas- cluster ion beam energies and selecting the gas-cluster ion beam energy that provides acceptable re-crystallization and activation without resulting in depth 506 exceeding the semiconductor integrated circuit or semiconductor device process requirements.
  • Figure 8 is a schematic 550 of a portion of a semiconductor wafer 302, showing re-crystallization and electrical activation of surface film after completion of gas-cluster ion beam processing according to the first embodiment ofthe invention.
  • a uniformly re- crystallized and electrically activated film 552, having a depth 506 replaces the original damaged and/or doped film 308.
  • Figure 9 is a schematic 600 of a portion of a semiconductor wafer 602 being impacted by a gas-cluster ion 606 comprising a mixture of dopant gas and electrically inert gas molecules, according to a second embodiment ofthe invention.
  • the semiconductor wafer 602 has a surface 604 and is typically a single crystal material with a high degree of crystallinity and may be at any of several stages of processing for fabricating an integrated circuit or semiconductor device.
  • a semiconductor wafer 602 is at a stage of fabrication where it is desired to dope a thin surface film with an acceptor or donor impurity and to electrically activate the dopant for formation of a shallow junction or shallow doped region.
  • a gas-cluster ion 606 having a trajectory 608 is shown impacting surface 604 of semiconductor wafer 602, where it forms a gas-cluster ion-impact region 610.
  • gas-cluster ion 606 has been formed so that it is a gas that includes an acceptor or donor species for the semiconductor wafer 602.
  • the gas might include boron trifluoride, diborane, arsine, arsenic pentafluoride, phosphorous pentafluoride, phosphine, stibine, etc.
  • FIG 10 is a schematic 650 enlarging a portion o the semiconductor wafer 602 from Figure 9, showing additional detail.
  • Gas-cluster ion 606 comprises multiple molecules of at least one gas that includes a dopant atom for the semiconductor wafer 602.
  • the gas- cluster ion 606 may consist entirely of a gas that comprises a dopant for the semiconductor wafer 602, or the gas-cluster ion 606 may consist of a mixture of gases such that at least one of the two or more gasses in the mixture comprises a dopant atom for the semiconductor wafer 602.
  • Such a gas-cluster ion 606 may be formed in a GCIB processing apparatus 100 or 200 as shown in or similar to those shown in Figure 1 or in Figure 2, for examples.
  • a premixed gas mixture with the desired mix can be provided in a single gas storage cylinder 111 ( Figure 1 or Figure 2) or alternatively separate differing source gases 112 and 222 can be provided in gas storage cylinders 111 and 221 ( Figure 2) and then mixed in desired proportions as they flow to the stagnation chamber 116 ( Figure 2) by suitable adjustment of gas metering valves 113 and 223 ( Figure 2).
  • gas-cluster ion beams consisting entirely of a single gas including a dopant atom in its molecules, or to generate gas-cluster ion-beams with a mix of two or more gasses, wherein at least one is a gas including the dopant atom in its molecules and wherein at least one gas is a gas that is not a dopant.
  • the gas-cluster ion 606 is shown (for example and not for limitation) to comprise non-dopant molecules (non-dopant molecule 652 indicated as a representative example) and dopant molecules comprising a dopant atom (dopant molecule 654 indicated as a representative example).
  • the clusters used for the process ofthe invention can be formed entirely from dopant gas molecules, or at the other extreme, the ratio of dopant gas molecules to non-dopant gas molecules may be so low that some or many gas- cluster ions do not contain even a single dopant gas molecule, but wherein at least a portion ofthe gas-cluster ions in a gas-cluster ion beam comprise one or more molecules of dopant gas.
  • the gas-cluster ion 606 is formed from a mix of gases with a majority of non-dopant molecules 652 and a minority of dopant molecules 654.
  • the dopant gas might be for example diborane, comprising the dopant atom boron.
  • the non-dopant gas might be for example argon, which is an inert gas.
  • the gas-cluster ion-impact region 610 has a boundary 656. The volume ofthe gas-cluster ion-impact region 610 and hence it's depth of penetration ofthe surface ofthe semiconductor is dependent on the preselected and controlled energy ofthe gas-cluster ion 606.
  • the gas-cluster ion 606 Upon impact of an energetic gas-cluster ion 606 on the surface 604, the gas-cluster ion 606 dissociates and the individual non-dopant molecules 652 and dopant molecules 654 then become free.
  • Inert gas molecules typically recoil and escape from the surface 604 ofthe semiconductor wafer 602. Some molecules including some ofthe dopant molecules 654 become imbedded in the surface. Other than a small energy carried away by the escaping individual gas atoms, the total energy ofthe energetic gas-cluster ion 606 becomes deposited into the gas-cluster ion-impact region 610.
  • the dimensions o the gas-cluster ion-impact region 610 are dependent on the energy of the cluster but are ofthe order ofthe cross-sectional dimensions ofthe impacting gas-cluster ion and are small, for example roughly 30 - 100 Angstroms in diameter, depending on the preselected gas-cluster ion energy.
  • gas-cluster ion-impact region 610 material can momentarily reach temperatures of many hundreds to several thousands of degrees Kelvin.
  • impact of a gas-cluster ion 606 when carrying 10 keN total energy is estimated to be capable of producing a momentary temperature increase of about 2000 degrees Kelvin throughout an gas-cluster ion-impact region 610 extending to almost 100 Angstroms below the surface 604.
  • thermal agitation is high enough to possibly melt the material in the gas-cluster ion-impact region 610.
  • the gas-cluster ion-impact region 610 cools by thermal conduction in the directions 658, re-growth of crystalline material proceeds in the directions 660 from the highly crystalline semiconductor wafer 602 through the gas-cluster ion-impact region 610.
  • crystallinity is restored within the gas-cluster ion-impact region 610 following the cluster ion thermal transient and some dopant atoms originating in the gas dopant molecules 654 remain in the semiconductor and occupy substitutional lattice sites in the semiconductor material in the gas-cluster ion-impact region 610.
  • the dopant atoms present in the of the gas-cluster ion-impact region 610 thus become electrically activated.
  • the semiconductor wafer 602 thus becomes doped, electrically activated, and re-crystallized in the gas- cluster ion-impact region 610.
  • the doping concentration is controlled by pre-selecting and controlling the ratio of dopant to non-dopant molecules in the gas mixture used for forming the gas-cluster ion beam.
  • Figure 11 is a schematic 700 of a portion of a semiconductor wafer 602, showmg doping with re-crystallization and electrical activation of a region impacted by a gas-cluster ion, according to the second embodiment ofthe present invention.
  • a doped, electrically activated, and re-crystallized region 702 replaces the gas-cluster ion-impact region 610 of Figure 10.
  • Doped, electrically activated, and re-crystallized region 702 extends to a depth 704 below the surface 604 of semiconductor wafer 602.
  • Figure 12 is a schematic 750 of a portion of a semiconductor wafer 602, showmg a doped, electrically activated, and re-crystallized film 752 formed by completion of gas-cluster ion beam processing according to the second embodiment ofthe present invention.
  • additional doped, electrically activated, and re-crystallized region regions similar to the doped, electrically activated, and re- crystallized region 702 ( Figure 11) form, overlap, and eventually develop the doped, electrically activated, and re-crystallized film 752, extending to a depth 704 below the surface 604 ofthe semiconductor wafer 602.
  • a doped, electrically activated, and re-crystallized film 752 is formed on semiconductor wafer 602 in a single processing step.
  • the film depth 704 is controlled by selection of the gas-cluster ion beam energy. Shallow doped semiconductor surface films of a few hundred Angstroms down to a few tens of Angstroms are formed and hence similarly shallow junctions may be formed.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention porte sur une méthode de traitement à l'aide de faisceaux (128) d'ions à amas gazeux de films semi-conducteurs (308) à des fins de recristallisation et/ou d'activation du dopant de films semi-conducteurs (308) à diffusion réduite du dopant, et sur des dispositifs semi-conducteurs ainsi obtenus. La méthode peut par exemple servir à restaurer la cristallinité et/ou à activer électriquement une substance dopante, après implantation d'une couche peu profonde formant des jonctions peu profondes. Dans une exécution les atomes de dopant incorporés aux amas gazeux produisent un dopage mince du semi-conducteur (302) et simultanément l'activation électrique des atomes de dopant et la recristallisation du semi-conducteur.
EP03799903A 2002-12-12 2003-12-12 Recristallisation de films superficiels de semi-conducteurs par irradiation energetique d'amas Withdrawn EP1584104A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US43386602P 2002-12-12 2002-12-12
US433866P 2002-12-12
PCT/US2003/039754 WO2004053945A2 (fr) 2002-12-12 2003-12-12 Recristallisation de films superficiels de semi-conducteurs par irradiation energetique d'amas

Publications (2)

Publication Number Publication Date
EP1584104A2 true EP1584104A2 (fr) 2005-10-12
EP1584104A4 EP1584104A4 (fr) 2010-05-26

Family

ID=32508036

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03799903A Withdrawn EP1584104A4 (fr) 2002-12-12 2003-12-12 Recristallisation de films superficiels de semi-conducteurs par irradiation energetique d'amas

Country Status (4)

Country Link
EP (1) EP1584104A4 (fr)
JP (1) JP2006510196A (fr)
AU (1) AU2003299614A1 (fr)
WO (1) WO2004053945A2 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006062536A2 (fr) * 2004-12-03 2006-06-15 Epion Corporation Formation de jonctions ultra-minces par irradiation avec des ions d'agregats gazeux
US7410890B2 (en) 2002-12-12 2008-08-12 Tel Epion Inc. Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
JP2007525838A (ja) 2004-02-14 2007-09-06 エピオン コーポレーション ドープ済みおよび未ドープの歪み半導体の形成方法およびガスクラスタイオン照射による半導体薄膜の形成方法
US7759251B2 (en) 2004-06-03 2010-07-20 Tel Epion Corporation Dual damascene integration structure and method for forming improved dual damascene integration structure
US7514725B2 (en) 2004-11-30 2009-04-07 Spire Corporation Nanophotovoltaic devices
JP5591470B2 (ja) 2005-08-30 2014-09-17 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド 代替フッ化ホウ素前駆体を使用するホウ素イオン注入および注入のための大きな水素化ホウ素の形成
US20070178678A1 (en) * 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US7566888B2 (en) 2007-05-23 2009-07-28 Tel Epion Inc. Method and system for treating an interior surface of a workpiece using a charged particle beam
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI689467B (zh) 2010-02-26 2020-04-01 美商恩特葛瑞斯股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
CN106237934B (zh) 2010-08-30 2019-08-27 恩特格里斯公司 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法
JP5318137B2 (ja) * 2011-03-22 2013-10-16 株式会社東芝 多層膜の製造方法
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
CN108565198A (zh) 2012-02-14 2018-09-21 恩特格里斯公司 用于改善注入束和源寿命性能的碳掺杂剂气体和协流
CN105637616A (zh) 2013-08-16 2016-06-01 恩特格里斯公司 基板中的硅注入及提供其硅前体组合物
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115527A (en) * 1980-02-15 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4370176A (en) * 1980-02-01 1983-01-25 Commissariat A L'energie Atomique Process for fast droping of semiconductors
WO2002052608A2 (fr) * 2000-12-26 2002-07-04 Epion Corporation Systeme de dosimetrie et de regulation de charge pour faisceau d'ions d'agregats gazeux

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53109475A (en) * 1977-03-07 1978-09-25 Hitachi Ltd Manufacture for semiconductor device
JPS58111324A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体装置の製造方法
JP2662321B2 (ja) * 1991-05-31 1997-10-08 科学技術振興事業団 超低速クラスターイオンビームによる表面処理方法
JPH0941138A (ja) * 1995-07-31 1997-02-10 Res Dev Corp Of Japan ガスクラスターイオンビームによるイオン注入法
US6251835B1 (en) * 1997-05-08 2001-06-26 Epion Corporation Surface planarization of high temperature superconductors
US6629508B2 (en) * 1999-12-10 2003-10-07 Epion Corporation Ionizer for gas cluster ion beam formation
US6770874B2 (en) * 2000-07-14 2004-08-03 Epion Corporation Gas cluster ion beam size diagnostics and workpiece processing
EP1305452A4 (fr) * 2000-07-14 2007-12-26 Tel Epion Inc Procede et dispositif servant a diagnostiquer les dimensions d'agregats ionises preformes en phase gazeuse et a traiter une piece
KR100445105B1 (ko) * 2001-10-25 2004-08-21 주식회사 다산 씨.앤드.아이 가스 클러스터 이온빔을 이용한 아이.티.오 박막 표면처리시스템 및 그 방법
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4370176A (en) * 1980-02-01 1983-01-25 Commissariat A L'energie Atomique Process for fast droping of semiconductors
JPS56115527A (en) * 1980-02-15 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
WO2002052608A2 (fr) * 2000-12-26 2002-07-04 Epion Corporation Systeme de dosimetrie et de regulation de charge pour faisceau d'ions d'agregats gazeux

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ALLEM L P ET AL: "Gas-cluster ion-beam smoothing of chemo-mechanical-polish processed GaSb(100) substrates" THIRD INTERNATIONAL CONFERENCE ON ALTERNATIVE SUBSTRATE TECHNOLOGY, September 2002 (2002-09), Cancun, Mexico & JOURNAL OF ELECTRONIC MATERIALS, WARRENDALE, PA, US, vol. 32, no. 8, 1 August 2003 (2003-08-01) , pages 842-848, XP009132285 ISSN: 0361-5235 *
See also references of WO2004053945A2 *
YAMADA I ET AL: "Materials processing by gas cluster ion beams" MATERIALS SCIENCE AND ENGINEERING R: REPORTS, ELSEVIER SEQUOIA S.A., LAUSANNE, CH LNKD- DOI:10.1016/S0927-796X(01)00034-1, vol. 34, no. 6, 30 October 2001 (2001-10-30), pages 231-295, XP004308527 ISSN: 0927-796X *

Also Published As

Publication number Publication date
EP1584104A4 (fr) 2010-05-26
JP2006510196A (ja) 2006-03-23
AU2003299614A8 (en) 2004-06-30
WO2004053945A3 (fr) 2005-03-03
WO2004053945A2 (fr) 2004-06-24
AU2003299614A1 (en) 2004-06-30

Similar Documents

Publication Publication Date Title
US7410890B2 (en) Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
US7396745B2 (en) Formation of ultra-shallow junctions by gas-cluster ion irradiation
US7259036B2 (en) Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products
WO2004053945A2 (fr) Recristallisation de films superficiels de semi-conducteurs par irradiation energetique d'amas
US6111260A (en) Method and apparatus for in situ anneal during ion implant
US20060292762A1 (en) Replacement gate field effect transistor with germanium or SiGe channel and manufacturing method for same using gas-cluster ion irradiation
US7060989B2 (en) Method and apparatus for improved processing with a gas-cluster ion beam
US7994031B2 (en) Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
US7642150B2 (en) Techniques for forming shallow junctions
US7547900B2 (en) Techniques for providing a ribbon-shaped gas cluster ion beam
US20130230984A1 (en) Method to alter silicide properties using gcib treatment
US8440578B2 (en) GCIB process for reducing interfacial roughness following pre-amorphization
US20090032725A1 (en) Apparatus and methods for treating a workpiece using a gas cluster ion beam
TW201007821A (en) Control of particles on semiconductor wafers when implanting boron hydrides
KR101528383B1 (ko) 반도체 장치에서 누전 성능을 개선시키고 전자이동을 최소화시키는 방법
CN112176306A (zh) 一种气体团簇离子束在衬底中形成非晶层的方法
US8481340B2 (en) Method for preparing a light-emitting device using gas cluster ion beam processing
Yamada et al. Range and damage distribution in cluster ion implantation
US8815719B2 (en) Defect-free junction formation using octadecaborane self-amorphizing implants
Grob Ion implantation

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

17P Request for examination filed

Effective date: 20050905

RBV Designated contracting states (corrected)

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE FR GB

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: TEL EPION INC.

A4 Supplementary search report drawn up and despatched

Effective date: 20100427

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/265 20060101ALI20100421BHEP

Ipc: H01L 21/324 20060101ALI20100421BHEP

Ipc: H01L 21/302 20060101ALI20100421BHEP

Ipc: H01L 21/44 20060101ALI20100421BHEP

Ipc: H01L 21/26 20060101ALI20100421BHEP

Ipc: H01L 21/425 20060101AFI20050804BHEP

17Q First examination report despatched

Effective date: 20100823

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20110104