JP2016529740A5 - - Google Patents
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- Publication number
- JP2016529740A5 JP2016529740A5 JP2016540923A JP2016540923A JP2016529740A5 JP 2016529740 A5 JP2016529740 A5 JP 2016529740A5 JP 2016540923 A JP2016540923 A JP 2016540923A JP 2016540923 A JP2016540923 A JP 2016540923A JP 2016529740 A5 JP2016529740 A5 JP 2016529740A5
- Authority
- JP
- Japan
- Prior art keywords
- cas
- cfh
- chf
- group
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 13
- 150000001875 compounds Chemical class 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000007800 oxidant agent Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- LMSLTAIWOIYSGZ-XIXRPRMCSA-N (3s,4r)-1,1,2,2,3,4-hexafluorocyclobutane Chemical compound F[C@H]1[C@@H](F)C(F)(F)C1(F)F LMSLTAIWOIYSGZ-XIXRPRMCSA-N 0.000 claims 1
- LMSLTAIWOIYSGZ-LWMBPPNESA-N (3s,4s)-1,1,2,2,3,4-hexafluorocyclobutane Chemical compound F[C@H]1[C@H](F)C(F)(F)C1(F)F LMSLTAIWOIYSGZ-LWMBPPNESA-N 0.000 claims 1
- NLOLSXYRJFEOTA-OWOJBTEDSA-N (e)-1,1,1,4,4,4-hexafluorobut-2-ene Chemical compound FC(F)(F)\C=C\C(F)(F)F NLOLSXYRJFEOTA-OWOJBTEDSA-N 0.000 claims 1
- NLOLSXYRJFEOTA-UPHRSURJSA-N (z)-1,1,1,4,4,4-hexafluorobut-2-ene Chemical compound FC(F)(F)\C=C/C(F)(F)F NLOLSXYRJFEOTA-UPHRSURJSA-N 0.000 claims 1
- CCVRBOAAPJPHKL-UHFFFAOYSA-N 1,1,2,2,3-pentafluorocyclobutane Chemical compound FC1CC(F)(F)C1(F)F CCVRBOAAPJPHKL-UHFFFAOYSA-N 0.000 claims 1
- AKQMZZOTFNLAQJ-UHFFFAOYSA-N 1,1,2,2-tetrafluorocyclobutane Chemical compound FC1(F)CCC1(F)F AKQMZZOTFNLAQJ-UHFFFAOYSA-N 0.000 claims 1
- QMIWYOZFFSLIAK-UHFFFAOYSA-N 3,3,3-trifluoro-2-(trifluoromethyl)prop-1-ene Chemical compound FC(F)(F)C(=C)C(F)(F)F QMIWYOZFFSLIAK-UHFFFAOYSA-N 0.000 claims 1
- 101710178035 Chorismate synthase 2 Proteins 0.000 claims 1
- 101710152694 Cysteine synthase 2 Proteins 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000006227 byproduct Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361875321P | 2013-09-09 | 2013-09-09 | |
| US61/875,321 | 2013-09-09 | ||
| PCT/US2014/054780 WO2015035381A1 (en) | 2013-09-09 | 2014-09-09 | Method of etching semiconductor structures with etch gases |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018197415A Division JP6676724B2 (ja) | 2013-09-09 | 2018-10-19 | 基板上にエッチング耐性ポリマー層又はｓ含有パッシベーション層を堆積させる方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016529740A JP2016529740A (ja) | 2016-09-23 |
| JP2016529740A5 true JP2016529740A5 (enExample) | 2017-10-12 |
| JP6423885B2 JP6423885B2 (ja) | 2018-11-14 |
Family
ID=52629027
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016540923A Active JP6423885B2 (ja) | 2013-09-09 | 2014-09-09 | エッチングガスを用いて半導体構造をエッチングする方法 |
| JP2018197415A Active JP6676724B2 (ja) | 2013-09-09 | 2018-10-19 | 基板上にエッチング耐性ポリマー層又はｓ含有パッシベーション層を堆積させる方法 |
| JP2020042926A Active JP6997237B2 (ja) | 2013-09-09 | 2020-03-12 | ３ｄ ｎａｎｄフラッシュメモリを製造する方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018197415A Active JP6676724B2 (ja) | 2013-09-09 | 2018-10-19 | 基板上にエッチング耐性ポリマー層又はｓ含有パッシベーション層を堆積させる方法 |
| JP2020042926A Active JP6997237B2 (ja) | 2013-09-09 | 2020-03-12 | ３ｄ ｎａｎｄフラッシュメモリを製造する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9773679B2 (enExample) |
| JP (3) | JP6423885B2 (enExample) |
| KR (3) | KR102480249B1 (enExample) |
| CN (2) | CN111261512B (enExample) |
| SG (2) | SG10201807360YA (enExample) |
| TW (2) | TWI642809B (enExample) |
| WO (1) | WO2015035381A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI733431B (zh) | 2014-06-18 | 2021-07-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用於tsv/mems/功率元件蝕刻的化學物質 |
| US10246772B2 (en) * | 2015-04-01 | 2019-04-02 | Applied Materials, Inc. | Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices |
| US9659788B2 (en) * | 2015-08-31 | 2017-05-23 | American Air Liquide, Inc. | Nitrogen-containing compounds for etching semiconductor structures |
| CN110050331B (zh) | 2016-12-09 | 2023-07-25 | Asm Ip 控股有限公司 | 热原子层蚀刻工艺 |
| US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| US10607850B2 (en) | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
| US20170110336A1 (en) * | 2016-12-31 | 2017-04-20 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges CLuadeq | Methods for minimizing sidewall damage during low k etch processes |
| US9941123B1 (en) * | 2017-04-10 | 2018-04-10 | Lam Research Corporation | Post etch treatment to prevent pattern collapse |
| US11075084B2 (en) * | 2017-08-31 | 2021-07-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Chemistries for etching multi-stacked layers |
| US10410878B2 (en) * | 2017-10-31 | 2019-09-10 | American Air Liquide, Inc. | Hydrofluorocarbons containing —NH2 functional group for 3D NAND and DRAM applications |
| KR102504833B1 (ko) * | 2017-11-16 | 2023-03-02 | 삼성전자 주식회사 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법 |
| KR102845765B1 (ko) * | 2018-01-15 | 2025-08-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 원격 플라즈마 산화에 대한 아르곤 추가 |
| JP7366918B2 (ja) | 2018-03-16 | 2023-10-23 | ラム リサーチ コーポレーション | 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質 |
| TWI804638B (zh) * | 2018-06-22 | 2023-06-11 | 日商關東電化工業股份有限公司 | 使用含硫原子之氣體分子之電漿蝕刻方法 |
| TWI808274B (zh) * | 2018-10-26 | 2023-07-11 | 日商關東電化工業股份有限公司 | 含有具有不飽和鍵之含硫氟碳化合物的乾式蝕刻氣體組成物及使用其之乾式蝕刻方法 |
| TWI886105B (zh) * | 2018-10-26 | 2025-06-11 | 日商關東電化工業股份有限公司 | 含有含硫氟碳化合物之乾蝕刻氣體組成物及使用其之乾蝕刻方法 |
| WO2020131608A1 (en) * | 2018-12-18 | 2020-06-25 | Mattson Technology, Inc. | Carbon containing hardmask removal process using sulfur containing process gas |
| WO2020008703A1 (ja) * | 2019-04-19 | 2020-01-09 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| KR20220030249A (ko) | 2019-06-24 | 2022-03-10 | 램 리써치 코포레이션 | 선택적 탄소 증착 |
| JP7737789B2 (ja) | 2019-07-18 | 2025-09-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 半導体処理システム用シャワーヘッドデバイス |
| US11384428B2 (en) * | 2019-07-19 | 2022-07-12 | Applied Materials, Inc. | Carbon layer covered mask in 3D applications |
| US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
| JP2021106212A (ja) * | 2019-12-26 | 2021-07-26 | 東京エレクトロン株式会社 | エッチング方法、基板処理装置、及び基板処理システム |
| US11798811B2 (en) * | 2020-06-26 | 2023-10-24 | American Air Liquide, Inc. | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures |
| US12106971B2 (en) * | 2020-12-28 | 2024-10-01 | American Air Liquide, Inc. | High conductive passivation layers and method of forming the same during high aspect ratio plasma etching |
| KR20220122260A (ko) * | 2021-02-26 | 2022-09-02 | 에스케이스페셜티 주식회사 | 실리콘 함유막의 다중 적층체의 식각 방법 및 이를 포함하는 반도체 디바이스의 제조방법 |
| KR20220126045A (ko) * | 2021-03-08 | 2022-09-15 | 에스케이스페셜티 주식회사 | 실리콘 함유막의 다중 적층체의 식각 방법 및 이를 포함하는 반도체 디바이스의 제조방법 |
| KR20220133019A (ko) | 2021-03-24 | 2022-10-04 | 삼성전자주식회사 | 식각 가스 조성물, 이를 이용한 미세 패턴 형성 방법 및 수직형 반도체 장치의 제조 방법 |
| US20250361440A1 (en) * | 2022-05-31 | 2025-11-27 | Resonac Corporation | Etching method |
| JPWO2023234305A1 (enExample) * | 2022-05-31 | 2023-12-07 | ||
| JP2025128420A (ja) * | 2022-07-22 | 2025-09-03 | 住友精化株式会社 | 炭素原子含有膜のドライエッチング方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3109253B2 (ja) * | 1992-06-29 | 2000-11-13 | ソニー株式会社 | ドライエッチング方法 |
| JP3230284B2 (ja) | 1992-07-21 | 2001-11-19 | ソニー株式会社 | 位相シフト・マスクの製造方法 |
| US5431777A (en) * | 1992-09-17 | 1995-07-11 | International Business Machines Corporation | Methods and compositions for the selective etching of silicon |
| JP3282243B2 (ja) | 1992-10-31 | 2002-05-13 | ソニー株式会社 | ドライエッチング方法 |
| JP3297939B2 (ja) * | 1992-11-17 | 2002-07-02 | ソニー株式会社 | ドライエッチング方法 |
| JPH07211694A (ja) | 1994-01-13 | 1995-08-11 | Sony Corp | ドライエッチング方法 |
| JPH11111680A (ja) * | 1997-09-30 | 1999-04-23 | Yasuhiro Horiike | エッチング方法 |
| US6635185B2 (en) | 1997-12-31 | 2003-10-21 | Alliedsignal Inc. | Method of etching and cleaning using fluorinated carbonyl compounds |
| US6387287B1 (en) | 1998-03-27 | 2002-05-14 | Applied Materials, Inc. | Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window |
| JP3611723B2 (ja) | 1998-07-22 | 2005-01-19 | セントラル硝子株式会社 | エッチングガス |
| JP3555737B2 (ja) | 1998-07-22 | 2004-08-18 | セントラル硝子株式会社 | クリーニングガス |
| KR100574923B1 (ko) * | 1999-07-21 | 2006-05-02 | 삼성전자주식회사 | 황 함유 탄화불소 가스를 사용하는 산화막의 건식 에칭 방법 |
| US6540930B2 (en) * | 2001-04-24 | 2003-04-01 | 3M Innovative Properties Company | Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases |
| US6746961B2 (en) * | 2001-06-19 | 2004-06-08 | Lam Research Corporation | Plasma etching of dielectric layer with etch profile control |
| JP3672900B2 (ja) | 2002-09-11 | 2005-07-20 | 松下電器産業株式会社 | パターン形成方法 |
| US7049247B2 (en) * | 2004-05-03 | 2006-05-23 | International Business Machines Corporation | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
| CN100517596C (zh) * | 2004-06-29 | 2009-07-22 | 优利讯美国有限公司 | 减少时分复用蚀刻工艺中蚀刻纵横比相关度的方法和装置 |
| WO2006049595A1 (en) * | 2004-10-27 | 2006-05-11 | International Business Machines Corporation | Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics |
| US7645707B2 (en) * | 2005-03-30 | 2010-01-12 | Lam Research Corporation | Etch profile control |
| JPWO2007116515A1 (ja) * | 2006-04-07 | 2009-08-20 | 株式会社フィルテック | 半導体装置及びその製造方法、ドライエッチング方法、配線材料の作製方法、並びにエッチング装置 |
| KR101442308B1 (ko) * | 2007-09-28 | 2014-09-22 | 제온 코포레이션 | 플라즈마 에칭 방법 |
| US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
| US8133819B2 (en) * | 2008-02-21 | 2012-03-13 | Applied Materials, Inc. | Plasma etching carbonaceous layers with sulfur-based etchants |
| CN101625966A (zh) * | 2008-07-11 | 2010-01-13 | 东京毅力科创株式会社 | 基板处理方法 |
| KR101660488B1 (ko) | 2010-01-22 | 2016-09-28 | 삼성전자주식회사 | 3차원 반도체 장치 및 그 제조 방법 |
| JP5862012B2 (ja) * | 2010-02-01 | 2016-02-16 | セントラル硝子株式会社 | ドライエッチング剤及びドライエッチング方法 |
| CN101800175B (zh) * | 2010-02-11 | 2011-07-20 | 中微半导体设备(上海)有限公司 | 一种含硅绝缘层的等离子刻蚀方法 |
| KR102034556B1 (ko) * | 2012-02-09 | 2019-10-21 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 |
-
2014
- 2014-09-05 TW TW106143385A patent/TWI642809B/zh active
- 2014-09-05 TW TW103130752A patent/TWI612182B/zh active
- 2014-09-09 WO PCT/US2014/054780 patent/WO2015035381A1/en not_active Ceased
- 2014-09-09 US US14/917,424 patent/US9773679B2/en active Active
- 2014-09-09 CN CN202010060259.0A patent/CN111261512B/zh active Active
- 2014-09-09 KR KR1020227015749A patent/KR102480249B1/ko active Active
- 2014-09-09 KR KR1020217029700A patent/KR102400414B1/ko active Active
- 2014-09-09 CN CN201480049399.0A patent/CN105580116B/zh active Active
- 2014-09-09 SG SG10201807360YA patent/SG10201807360YA/en unknown
- 2014-09-09 JP JP2016540923A patent/JP6423885B2/ja active Active
- 2014-09-09 SG SG11201601839RA patent/SG11201601839RA/en unknown
- 2014-09-09 KR KR1020167009222A patent/KR102305297B1/ko active Active
-
2017
- 2017-08-24 US US15/685,575 patent/US10115600B2/en active Active
-
2018
- 2018-10-19 JP JP2018197415A patent/JP6676724B2/ja active Active
-
2020
- 2020-03-12 JP JP2020042926A patent/JP6997237B2/ja active Active
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