JP2015053359A5 - - Google Patents
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- Publication number
- JP2015053359A5 JP2015053359A5 JP2013184813A JP2013184813A JP2015053359A5 JP 2015053359 A5 JP2015053359 A5 JP 2015053359A5 JP 2013184813 A JP2013184813 A JP 2013184813A JP 2013184813 A JP2013184813 A JP 2013184813A JP 2015053359 A5 JP2015053359 A5 JP 2015053359A5
- Authority
- JP
- Japan
- Prior art keywords
- side wall
- surface side
- insulating film
- gate insulating
- opening direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013184813A JP6098447B2 (ja) | 2013-09-06 | 2013-09-06 | 炭化珪素半導体装置およびその製造方法 |
| PCT/JP2014/068881 WO2015033674A1 (ja) | 2013-09-06 | 2014-07-16 | 炭化珪素半導体装置およびその製造方法 |
| US14/912,433 US10014376B2 (en) | 2013-09-06 | 2014-07-16 | Silicon carbide semiconductor device having a trench with side walls and method for manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013184813A JP6098447B2 (ja) | 2013-09-06 | 2013-09-06 | 炭化珪素半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015053359A JP2015053359A (ja) | 2015-03-19 |
| JP2015053359A5 true JP2015053359A5 (enExample) | 2016-06-23 |
| JP6098447B2 JP6098447B2 (ja) | 2017-03-22 |
Family
ID=52628161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013184813A Active JP6098447B2 (ja) | 2013-09-06 | 2013-09-06 | 炭化珪素半導体装置およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10014376B2 (enExample) |
| JP (1) | JP6098447B2 (enExample) |
| WO (1) | WO2015033674A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016213419A (ja) | 2015-05-13 | 2016-12-15 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| FR3038127B1 (fr) * | 2015-06-24 | 2017-06-23 | Commissariat Energie Atomique | Procede de fabrication d'une pluralite de dipoles en forme d'ilots ayant des electrodes auto-alignees |
| JP6472776B2 (ja) | 2016-02-01 | 2019-02-20 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| DE102016226237B4 (de) | 2016-02-01 | 2024-07-18 | Fuji Electric Co., Ltd. | Siliziumcarbid-halbleitervorrichtung |
| CN108735795B (zh) * | 2017-04-21 | 2021-09-03 | 苏州能屋电子科技有限公司 | (0001)面外延的六方相SiC晶圆、UMOSFET器件及其制作方法 |
| US20230261042A1 (en) * | 2020-07-10 | 2023-08-17 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device |
| WO2022200338A1 (en) | 2021-03-22 | 2022-09-29 | Hitachi Energy Switzerland Ag | Power semiconductor device |
| CN113078050B (zh) * | 2021-03-30 | 2023-03-10 | 安徽长飞先进半导体有限公司 | 一种C面SiC外延结构及外延沟槽的填充方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5017823B2 (ja) * | 2005-09-12 | 2012-09-05 | 富士電機株式会社 | 半導体素子の製造方法 |
| JP4046140B1 (ja) * | 2006-11-29 | 2008-02-13 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP2008244455A (ja) * | 2007-02-28 | 2008-10-09 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
| JP4450241B2 (ja) * | 2007-03-20 | 2010-04-14 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| JP5157843B2 (ja) | 2007-12-04 | 2013-03-06 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
| EP2418683A4 (en) * | 2009-04-10 | 2013-05-15 | Sumitomo Electric Industries | FIELD EFFECT TRANSISTOR WITH INSULATED GATE |
| JP5721351B2 (ja) * | 2009-07-21 | 2015-05-20 | ローム株式会社 | 半導体装置 |
| KR20130118215A (ko) * | 2010-08-03 | 2013-10-29 | 스미토모덴키고교가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
| JP2012146921A (ja) * | 2011-01-14 | 2012-08-02 | Denso Corp | 炭化珪素半導体装置 |
| JPWO2013031172A1 (ja) * | 2011-08-26 | 2015-03-23 | 国立大学法人 奈良先端科学技術大学院大学 | ＳｉＣ半導体素子およびその製造方法 |
| JP5699878B2 (ja) | 2011-09-14 | 2015-04-15 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| US8872280B2 (en) * | 2012-07-31 | 2014-10-28 | United Microelectronics Corp. | Non-planar FET and manufacturing method thereof |
-
2013
- 2013-09-06 JP JP2013184813A patent/JP6098447B2/ja active Active
-
2014
- 2014-07-16 WO PCT/JP2014/068881 patent/WO2015033674A1/ja not_active Ceased
- 2014-07-16 US US14/912,433 patent/US10014376B2/en active Active