JP2016197719A5 - - Google Patents

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JP2016197719A5
JP2016197719A5 JP2016063410A JP2016063410A JP2016197719A5 JP 2016197719 A5 JP2016197719 A5 JP 2016197719A5 JP 2016063410 A JP2016063410 A JP 2016063410A JP 2016063410 A JP2016063410 A JP 2016063410A JP 2016197719 A5 JP2016197719 A5 JP 2016197719A5
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film layer
layer
silicon
silicon oxide
silicon nitride
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JP2016197719A (ja
JP6820153B2 (ja
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JP2016063410A 2015-04-01 2016-03-28 3d nandメモリデバイスにおける垂直エッチング性能の改善のための、膜のプラズマ化学気相堆積 Active JP6820153B2 (ja)

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US201562141606P 2015-04-01 2015-04-01
US62/141,606 2015-04-01

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JP2021000067A Division JP7244552B2 (ja) 2015-04-01 2021-01-04 3d nandメモリデバイスにおける垂直エッチング性能の改善のための、膜のプラズマ化学気相堆積

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JP2016197719A JP2016197719A (ja) 2016-11-24
JP2016197719A5 true JP2016197719A5 (enExample) 2019-05-09
JP6820153B2 JP6820153B2 (ja) 2021-01-27

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JP2021000067A Active JP7244552B2 (ja) 2015-04-01 2021-01-04 3d nandメモリデバイスにおける垂直エッチング性能の改善のための、膜のプラズマ化学気相堆積

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US (2) US10246772B2 (enExample)
JP (2) JP6820153B2 (enExample)
KR (1) KR102456460B1 (enExample)
CN (1) CN106057636A (enExample)
TW (2) TWI719015B (enExample)

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