JP2018535329A5 - - Google Patents
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- Publication number
- JP2018535329A5 JP2018535329A5 JP2018544434A JP2018544434A JP2018535329A5 JP 2018535329 A5 JP2018535329 A5 JP 2018535329A5 JP 2018544434 A JP2018544434 A JP 2018544434A JP 2018544434 A JP2018544434 A JP 2018544434A JP 2018535329 A5 JP2018535329 A5 JP 2018535329A5
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- chamber
- single layer
- processing chamber
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 7
- 230000008021 deposition Effects 0.000 claims 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 6
- 239000002356 single layer Substances 0.000 claims 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 5
- 229910052782 aluminium Inorganic materials 0.000 claims 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 239000010410 layer Substances 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000005240 physical vapour deposition Methods 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1560933 | 2015-11-16 | ||
| FR1560933A FR3043699B1 (fr) | 2015-11-16 | 2015-11-16 | Procede de formation d'oxyde et/ou de nitrure d'aluminium et dispositif pour la mise en oeuvre d'un tel procede |
| PCT/FR2016/052956 WO2017085392A1 (fr) | 2015-11-16 | 2016-11-15 | Procede de formation d'oxyde et/ou de nitrure d'aluminium |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018535329A JP2018535329A (ja) | 2018-11-29 |
| JP2018535329A5 true JP2018535329A5 (enExample) | 2019-12-12 |
| JP6956099B2 JP6956099B2 (ja) | 2021-10-27 |
Family
ID=55073006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018544434A Active JP6956099B2 (ja) | 2015-11-16 | 2016-11-15 | 酸化アルミニウム及び／又は窒化アルミニウムの製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20180327907A1 (enExample) |
| EP (1) | EP3377672B1 (enExample) |
| JP (1) | JP6956099B2 (enExample) |
| CN (1) | CN108603288B (enExample) |
| FR (1) | FR3043699B1 (enExample) |
| WO (1) | WO2017085392A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110218362A (zh) * | 2018-03-04 | 2019-09-10 | 盐城增材科技有限公司 | 一种石墨烯/氧化铝/氮化铝界面导热导电增强橡胶及其制备方法 |
| KR102620219B1 (ko) * | 2018-11-02 | 2024-01-02 | 삼성전자주식회사 | 기판 처리 방법 및 기판 처리 장치 |
| CN111455351A (zh) * | 2020-04-10 | 2020-07-28 | 厦门大学 | 一种氮化铝-氧化铝薄膜及其制备方法和应用 |
| US20220320417A1 (en) * | 2021-04-01 | 2022-10-06 | Applied Materials, Inc. | Method of manufacturing aluminum nitride films |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06101019A (ja) * | 1992-09-18 | 1994-04-12 | Fujitsu Ltd | アルミナ膜形成方法 |
| JP3781787B2 (ja) * | 1993-10-26 | 2006-05-31 | 株式会社半導体エネルギー研究所 | 多目的基板処理装置およびその動作方法および薄膜集積回路の作製方法 |
| JP4531145B2 (ja) * | 1997-05-27 | 2010-08-25 | 株式会社アルバック | 極薄絶縁膜形成方法 |
| WO2004009861A2 (en) * | 2002-07-19 | 2004-01-29 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
| JP3708940B2 (ja) * | 2003-10-27 | 2005-10-19 | 株式会社東芝 | Ｃｖｄ装置の反応室のコーティング方法 |
| US7595967B1 (en) * | 2004-09-07 | 2009-09-29 | Western Digital (Fremont), Llp | Method for fabricating a spacer layer for a magnetoresistive element |
| JP2006086468A (ja) * | 2004-09-17 | 2006-03-30 | Canon Anelva Corp | 磁気抵抗膜の製造方法及び製造装置 |
| US7723205B2 (en) * | 2005-09-27 | 2010-05-25 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device, manufacturing method thereof, liquid crystal display device, RFID tag, light emitting device, and electronic device |
| JP4680140B2 (ja) * | 2006-07-14 | 2011-05-11 | 日本碍子株式会社 | ＡｌＮ単結晶膜の形成方法 |
| US8383439B2 (en) * | 2007-10-25 | 2013-02-26 | Showa Denko K.K. | Apparatus for manufacturing group-III nitride semiconductor layer, method of manufacturing group-III nitride semiconductor layer, group-III nitride semiconductor light-emitting device, method of manufacturing group-III nitride semiconductor light-emitting device, and lamp |
| JP5304070B2 (ja) * | 2007-10-25 | 2013-10-02 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体層の製造装置、ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子の製造方法 |
| CN102400091B (zh) * | 2010-09-10 | 2014-03-26 | 鸿富锦精密工业（深圳）有限公司 | 铝合金的表面处理方法及由铝合金制得的壳体 |
| CN102409293A (zh) * | 2011-12-04 | 2012-04-11 | 中国航天科技集团公司第五研究院第五一〇研究所 | 一种氧化铝薄膜的制备方法 |
| US20140124788A1 (en) * | 2012-11-06 | 2014-05-08 | Intermolecular, Inc. | Chemical Vapor Deposition System |
| US9214334B2 (en) * | 2014-02-18 | 2015-12-15 | Lam Research Corporation | High growth rate process for conformal aluminum nitride |
| CN104561928A (zh) * | 2014-12-24 | 2015-04-29 | 浙江大学 | 一种在玻璃基底上沉积二氧化硅薄膜的方法 |
-
2015
- 2015-11-16 FR FR1560933A patent/FR3043699B1/fr active Active
-
2016
- 2016-11-15 EP EP16809496.9A patent/EP3377672B1/fr active Active
- 2016-11-15 US US15/775,984 patent/US20180327907A1/en active Pending
- 2016-11-15 JP JP2018544434A patent/JP6956099B2/ja active Active
- 2016-11-15 WO PCT/FR2016/052956 patent/WO2017085392A1/fr not_active Ceased
- 2016-11-15 CN CN201680067039.2A patent/CN108603288B/zh active Active
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