FR3043699B1 - Procede de formation d'oxyde et/ou de nitrure d'aluminium et dispositif pour la mise en oeuvre d'un tel procede - Google Patents

Procede de formation d'oxyde et/ou de nitrure d'aluminium et dispositif pour la mise en oeuvre d'un tel procede Download PDF

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Publication number
FR3043699B1
FR3043699B1 FR1560933A FR1560933A FR3043699B1 FR 3043699 B1 FR3043699 B1 FR 3043699B1 FR 1560933 A FR1560933 A FR 1560933A FR 1560933 A FR1560933 A FR 1560933A FR 3043699 B1 FR3043699 B1 FR 3043699B1
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FR
France
Prior art keywords
aluminum
layer
oxide
chamber
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1560933A
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English (en)
French (fr)
Other versions
FR3043699A1 (fr
Inventor
Julien Vitiello
Jean-Luc Delcarri
Fabien PIALLAT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobus SAS
Original Assignee
Altatech Semiconductor SAS
Kobus SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Altatech Semiconductor SAS, Kobus SAS filed Critical Altatech Semiconductor SAS
Priority to FR1560933A priority Critical patent/FR3043699B1/fr
Priority to JP2018544434A priority patent/JP6956099B2/ja
Priority to PCT/FR2016/052956 priority patent/WO2017085392A1/fr
Priority to CN201680067039.2A priority patent/CN108603288B/zh
Priority to EP16809496.9A priority patent/EP3377672B1/fr
Priority to US15/775,984 priority patent/US20180327907A1/en
Publication of FR3043699A1 publication Critical patent/FR3043699A1/fr
Application granted granted Critical
Publication of FR3043699B1 publication Critical patent/FR3043699B1/fr
Active legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/12—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
FR1560933A 2015-11-16 2015-11-16 Procede de formation d'oxyde et/ou de nitrure d'aluminium et dispositif pour la mise en oeuvre d'un tel procede Active FR3043699B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1560933A FR3043699B1 (fr) 2015-11-16 2015-11-16 Procede de formation d'oxyde et/ou de nitrure d'aluminium et dispositif pour la mise en oeuvre d'un tel procede
JP2018544434A JP6956099B2 (ja) 2015-11-16 2016-11-15 酸化アルミニウム及び／又は窒化アルミニウムの製造方法
PCT/FR2016/052956 WO2017085392A1 (fr) 2015-11-16 2016-11-15 Procede de formation d'oxyde et/ou de nitrure d'aluminium
CN201680067039.2A CN108603288B (zh) 2015-11-16 2016-11-15 生产氧化铝和/或氮化铝的方法
EP16809496.9A EP3377672B1 (fr) 2015-11-16 2016-11-15 Procede de formation d'oxyde et/ou de nitrure d'aluminium
US15/775,984 US20180327907A1 (en) 2015-11-16 2016-11-15 Method for producing aluminuim oxide and/or nitride

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1560933 2015-11-16
FR1560933A FR3043699B1 (fr) 2015-11-16 2015-11-16 Procede de formation d'oxyde et/ou de nitrure d'aluminium et dispositif pour la mise en oeuvre d'un tel procede

Publications (2)

Publication Number Publication Date
FR3043699A1 FR3043699A1 (fr) 2017-05-19
FR3043699B1 true FR3043699B1 (fr) 2019-06-14

Family

ID=55073006

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1560933A Active FR3043699B1 (fr) 2015-11-16 2015-11-16 Procede de formation d'oxyde et/ou de nitrure d'aluminium et dispositif pour la mise en oeuvre d'un tel procede

Country Status (6)

Country Link
US (1) US20180327907A1 (enExample)
EP (1) EP3377672B1 (enExample)
JP (1) JP6956099B2 (enExample)
CN (1) CN108603288B (enExample)
FR (1) FR3043699B1 (enExample)
WO (1) WO2017085392A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110218362A (zh) * 2018-03-04 2019-09-10 盐城增材科技有限公司 一种石墨烯/氧化铝/氮化铝界面导热导电增强橡胶及其制备方法
KR102620219B1 (ko) * 2018-11-02 2024-01-02 삼성전자주식회사 기판 처리 방법 및 기판 처리 장치
CN111455351A (zh) * 2020-04-10 2020-07-28 厦门大学 一种氮化铝-氧化铝薄膜及其制备方法和应用
US20220320417A1 (en) * 2021-04-01 2022-10-06 Applied Materials, Inc. Method of manufacturing aluminum nitride films

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101019A (ja) * 1992-09-18 1994-04-12 Fujitsu Ltd アルミナ膜形成方法
JP3781787B2 (ja) * 1993-10-26 2006-05-31 株式会社半導体エネルギー研究所 多目的基板処理装置およびその動作方法および薄膜集積回路の作製方法
JP4531145B2 (ja) * 1997-05-27 2010-08-25 株式会社アルバック 極薄絶縁膜形成方法
WO2004009861A2 (en) * 2002-07-19 2004-01-29 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
JP3708940B2 (ja) * 2003-10-27 2005-10-19 株式会社東芝 Ｃｖｄ装置の反応室のコーティング方法
US7595967B1 (en) * 2004-09-07 2009-09-29 Western Digital (Fremont), Llp Method for fabricating a spacer layer for a magnetoresistive element
JP2006086468A (ja) * 2004-09-17 2006-03-30 Canon Anelva Corp 磁気抵抗膜の製造方法及び製造装置
US7723205B2 (en) * 2005-09-27 2010-05-25 Semiconductor Energy Laboratory Co., Ltd Semiconductor device, manufacturing method thereof, liquid crystal display device, RFID tag, light emitting device, and electronic device
JP4680140B2 (ja) * 2006-07-14 2011-05-11 日本碍子株式会社 ＡｌＮ単結晶膜の形成方法
US8383439B2 (en) * 2007-10-25 2013-02-26 Showa Denko K.K. Apparatus for manufacturing group-III nitride semiconductor layer, method of manufacturing group-III nitride semiconductor layer, group-III nitride semiconductor light-emitting device, method of manufacturing group-III nitride semiconductor light-emitting device, and lamp
JP5304070B2 (ja) * 2007-10-25 2013-10-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体層の製造装置、ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子の製造方法
CN102400091B (zh) * 2010-09-10 2014-03-26 鸿富锦精密工业（深圳）有限公司 铝合金的表面处理方法及由铝合金制得的壳体
CN102409293A (zh) * 2011-12-04 2012-04-11 中国航天科技集团公司第五研究院第五一〇研究所 一种氧化铝薄膜的制备方法
US20140124788A1 (en) * 2012-11-06 2014-05-08 Intermolecular, Inc. Chemical Vapor Deposition System
US9214334B2 (en) * 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
CN104561928A (zh) * 2014-12-24 2015-04-29 浙江大学 一种在玻璃基底上沉积二氧化硅薄膜的方法

Also Published As

Publication number Publication date
EP3377672A1 (fr) 2018-09-26
CN108603288B (zh) 2020-01-14
WO2017085392A1 (fr) 2017-05-26
EP3377672B1 (fr) 2019-08-07
CN108603288A (zh) 2018-09-28
JP2018535329A (ja) 2018-11-29
JP6956099B2 (ja) 2021-10-27
FR3043699A1 (fr) 2017-05-19
US20180327907A1 (en) 2018-11-15

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