JP2023547379A5 - - Google Patents

Info

Publication number
JP2023547379A5
JP2023547379A5 JP2023524594A JP2023524594A JP2023547379A5 JP 2023547379 A5 JP2023547379 A5 JP 2023547379A5 JP 2023524594 A JP2023524594 A JP 2023524594A JP 2023524594 A JP2023524594 A JP 2023524594A JP 2023547379 A5 JP2023547379 A5 JP 2023547379A5
Authority
JP
Japan
Prior art keywords
seasoning
seasoning film
precursor gas
depositing
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023524594A
Other languages
English (en)
Japanese (ja)
Other versions
JP7611375B2 (ja
JP2023547379A (ja
Filing date
Publication date
Priority claimed from US17/075,801 external-priority patent/US11996273B2/en
Application filed filed Critical
Publication of JP2023547379A publication Critical patent/JP2023547379A/ja
Publication of JP2023547379A5 publication Critical patent/JP2023547379A5/ja
Application granted granted Critical
Publication of JP7611375B2 publication Critical patent/JP7611375B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2023524594A 2020-10-21 2021-10-14 処理チャンバをシーズニングする方法 Active JP7611375B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/075,801 US11996273B2 (en) 2020-10-21 2020-10-21 Methods of seasoning process chambers
US17/075,801 2020-10-21
PCT/US2021/055029 WO2022086788A1 (en) 2020-10-21 2021-10-14 Methods of seasoning process chambers

Publications (3)

Publication Number Publication Date
JP2023547379A JP2023547379A (ja) 2023-11-10
JP2023547379A5 true JP2023547379A5 (enExample) 2024-10-22
JP7611375B2 JP7611375B2 (ja) 2025-01-09

Family

ID=81185224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023524594A Active JP7611375B2 (ja) 2020-10-21 2021-10-14 処理チャンバをシーズニングする方法

Country Status (5)

Country Link
US (1) US11996273B2 (enExample)
JP (1) JP7611375B2 (enExample)
KR (1) KR102889597B1 (enExample)
CN (1) CN116568862A (enExample)
WO (1) WO2022086788A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023119615A (ja) * 2022-02-17 2023-08-29 東京エレクトロン株式会社 基板処理方法および基板処理装置
DE102022126073A1 (de) * 2022-10-10 2024-04-11 Stephan Wege Prozessstabilität durch Abscheidung
CN116288275B (zh) * 2023-03-20 2024-09-10 上海华力集成电路制造有限公司 钛铝沉积机台的工艺腔室暖机方法
US20250022688A1 (en) * 2023-07-11 2025-01-16 Tokyo Electron Limited Plasma processing method and apparatus

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3561611B2 (ja) * 1997-09-25 2004-09-02 三洋電機株式会社 硬質炭素系被膜
JP2002184754A (ja) 2000-12-13 2002-06-28 Seiko Epson Corp ドライエッチング装置のシーズニング方法
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US7288284B2 (en) 2004-03-26 2007-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Post-cleaning chamber seasoning method
US20050221020A1 (en) 2004-03-30 2005-10-06 Tokyo Electron Limited Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film
US7094442B2 (en) * 2004-07-13 2006-08-22 Applied Materials, Inc. Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
US20080118663A1 (en) 2006-10-12 2008-05-22 Applied Materials, Inc. Contamination reducing liner for inductively coupled chamber
US20080254233A1 (en) * 2007-04-10 2008-10-16 Kwangduk Douglas Lee Plasma-induced charge damage control for plasma enhanced chemical vapor deposition processes
JP4536090B2 (ja) * 2007-07-26 2010-09-01 トヨタ自動車株式会社 炭素薄膜の製造方法
KR20090025053A (ko) * 2007-09-05 2009-03-10 주식회사 아이피에스 화학기상증착 챔버의 시즈닝 방법
US7659184B2 (en) * 2008-02-25 2010-02-09 Applied Materials, Inc. Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking
JP2010205854A (ja) * 2009-03-02 2010-09-16 Fujitsu Semiconductor Ltd 半導体装置の製造方法
CN102903613B (zh) * 2011-07-25 2016-05-18 中国科学院微电子研究所 消除接触孔工艺中桥接的方法
US20160329206A1 (en) * 2015-05-08 2016-11-10 Lam Research Corporation Methods of modulating residual stress in thin films
CN107636197B (zh) * 2015-06-05 2020-01-07 应用材料公司 赋予掺杂硼的碳膜静电夹持及极佳颗粒性能的渐变原位电荷捕捉层
US20200146496A1 (en) * 2016-03-28 2020-05-14 Bhagirath Ghanshyambhai PATADIA Portable fully automatic cooking system
US10002745B2 (en) 2016-05-03 2018-06-19 Applied Materials, Inc. Plasma treatment process for in-situ chamber cleaning efficiency enhancement in plasma processing chamber
US10186400B2 (en) * 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
KR102733023B1 (ko) * 2017-12-07 2024-11-20 램 리써치 코포레이션 챔버 내 산화 내성 보호 층 컨디셔닝
JP7162799B2 (ja) * 2018-03-08 2022-10-31 日本アイ・ティ・エフ株式会社 複合被膜および複合被膜の形成方法
US11180847B2 (en) * 2018-12-06 2021-11-23 Applied Materials, Inc. Atomic layer deposition coatings for high temperature ceramic components

Similar Documents

Publication Publication Date Title
JP2023547379A5 (enExample)
JP4299863B2 (ja) 半導体装置の製造方法
JP6472203B2 (ja) TDMAT又はTDEATを用いてPEALDによりTi含有膜を形成する方法
KR102454243B1 (ko) 기판 에지들에서 이면 증착을 감소시키고 두께 변화들을 완화하기 위한 시스템들 및 방법들
JP6995856B2 (ja) SiC蒸着層を含む半導体製造用部品及びその製造方法
CN114174554A (zh) 半导体处理腔室及清洁半导体处理腔室的方法
WO2018212882A3 (en) METHOD FOR CONTROLLING THE CONSTRAINTS OF THIN FILMS LAID DOWN BY CVD FOR DISPLAY TYPE APPLICATION
JP2008053683A (ja) 絶縁膜形成方法、半導体装置、および基板処理装置
JP2024504187A5 (enExample)
JP2017019094A5 (ja) 表面被覆切削工具の製造方法
CN103147067A (zh) 低压化学气相淀积装置及其薄膜淀积方法
TW201819667A (zh) 碳化鉭多塗層材料及其製備方法
JP2018535329A5 (enExample)
JP2009130288A (ja) 薄膜形成方法
CN103811293A (zh) 晶圆背面金属化的方法
CN110528003A (zh) 一种涂层的复合制备方法
TW201945568A (zh) 濺鍍方法
TW202016015A (zh) SiC構件及其製造方法
KR102438664B1 (ko) 그래핀 증착장치
US8980742B2 (en) Method of manufacturing multi-level metal thin film and apparatus for manufacturing the same
US8722180B2 (en) Coated article and method for making said article
US20230092185A1 (en) Method for processing a substrate
KR20030050945A (ko) TiN 박막 형성방법
CN114360998A (zh) 铝合金部件制造方法及半导体反应腔
KR20240072524A (ko) 몰리브덴 원자층 박막 형성 방법