JP2016009715A - 静電吸着用トレイ、基板固定装置 - Google Patents
静電吸着用トレイ、基板固定装置 Download PDFInfo
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- JP2016009715A JP2016009715A JP2014128275A JP2014128275A JP2016009715A JP 2016009715 A JP2016009715 A JP 2016009715A JP 2014128275 A JP2014128275 A JP 2014128275A JP 2014128275 A JP2014128275 A JP 2014128275A JP 2016009715 A JP2016009715 A JP 2016009715A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
Description
図1は、第1の実施の形態に係る基板固定装置を簡略化して例示する図であり、図1(b)が平面図、図1(a)は図1(b)のA−A線に沿う断面図である。図1を参照するに、基板固定装置1は、大略すると、静電チャック10と、ベースプレート20と、静電吸着用トレイ30とを有する。
第1の実施の形態の変形例1では、上層電極を複数個有し、載置面の上層電極に対応する位置に複数の吸着対象物を載置可能な基板固定装置の例を示す。なお、第1の実施の形態の変形例1において、既に説明した実施の形態と同一構成部品についての説明は省略する場合がある。
第1の実施の形態の変形例2では、冷却効率を向上可能な静電吸着用トレイを搭載した基板固定装置の例を示す。なお、第1の実施の形態の変形例2において、既に説明した実施の形態と同一構成部品についての説明は省略する場合がある。
10 静電チャック
11、31 基体
11a、31a 上面
12 静電電極
20 ベースプレート
21 冷却水路
30、30A、30B 静電吸着用トレイ
31b 背面
31c 載置面
31d 堰部
31e 突起部
31f 貫通孔
31x、31y 凹部
32、35 上層電極
33 下層電極
34 配線
100、110 吸着対象物
Claims (10)
- 吸着対象物が載置される載置面、及び前記載置面の反対面となる背面を備えた基体と、
前記基体の前記載置面側に内蔵された上層電極と、
前記基体の前記上層電極よりも前記背面側に内蔵された下層電極と、
前記上層電極と前記下層電極とを電気的に接続する配線と、を有し、
前記背面側から与えられる静電位により、前記載置面に載置される前記吸着対象物を保持する静電吸着用トレイ。 - 前記基体は低抵抗誘電体から構成されている請求項1記載の静電吸着用トレイ。
- 前記載置面及び前記背面は何れも研磨された面である請求項1又は2記載の静電吸着用トレイ。
- 前記上層電極を複数個有し、
前記載置面の前記上層電極に対応する位置に複数の吸着対象物を載置可能な請求項1乃至3の何れか一項記載の静電吸着用トレイ。 - 前記背面側に不活性ガスを充填させる空間を備えた請求項1乃至4の何れか一項記載の静電吸着用トレイ。
- 請求項1乃至5の何れか一項記載の静電吸着用トレイと、
静電電極が内蔵された基体を備えた静電チャックと、を有し、
前記静電電極と前記下層電極とは対向するように配され、
前記静電吸着用トレイは、前記静電チャックの基体の上面に着脱可能な状態で載置されている基板固定装置。 - 前記載置面に吸着対象物が載置され、前記静電電極に電圧が印加されると、前記下層電極が前記静電電極に吸着されて前記静電吸着用トレイが前記静電チャックの基体の上面に保持され、前記吸着対象物が前記上層電極に吸着されて前記吸着対象物が前記載置面に保持される請求項6記載の基板固定装置。
- 前記静電チャックの基体は低抵抗誘電体から構成されている請求項6又は7記載の基板固定装置。
- 前記静電チャックの基体の上面は研磨された面である請求項6乃至8の何れか一項記載の基板固定装置。
- 前記静電チャックは、前記静電吸着用トレイに不活性ガスを供給するガス路を備えている請求項6乃至9の何れか一項記載の基板固定装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014128275A JP6377975B2 (ja) | 2014-06-23 | 2014-06-23 | 基板固定装置 |
US14/732,868 US9837297B2 (en) | 2014-06-23 | 2015-06-08 | Tray and wafer holding apparatus |
TW104118706A TWI640054B (zh) | 2014-06-23 | 2015-06-10 | 托盤及晶圓固持裝置 |
KR1020150084935A KR102266688B1 (ko) | 2014-06-23 | 2015-06-16 | 트레이 및 웨이퍼 고정 장치 |
Applications Claiming Priority (1)
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JP2014128275A JP6377975B2 (ja) | 2014-06-23 | 2014-06-23 | 基板固定装置 |
Publications (3)
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JP2016009715A true JP2016009715A (ja) | 2016-01-18 |
JP2016009715A5 JP2016009715A5 (ja) | 2017-02-23 |
JP6377975B2 JP6377975B2 (ja) | 2018-08-22 |
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JP2014128275A Active JP6377975B2 (ja) | 2014-06-23 | 2014-06-23 | 基板固定装置 |
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US (1) | US9837297B2 (ja) |
JP (1) | JP6377975B2 (ja) |
KR (1) | KR102266688B1 (ja) |
TW (1) | TWI640054B (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018110216A (ja) * | 2017-01-05 | 2018-07-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR20180099494A (ko) | 2017-02-27 | 2018-09-05 | 신꼬오덴기 고교 가부시키가이샤 | 기판 고정구 및 기판 고정 디바이스 |
JP2019501515A (ja) * | 2016-11-07 | 2019-01-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板を保持するためのキャリア、処理システムでのキャリアの使用、キャリアを用いる処理システム、及び基板の温度を制御するための方法 |
JP2019114685A (ja) * | 2017-12-25 | 2019-07-11 | 日本特殊陶業株式会社 | 静電チャック |
JP2019522889A (ja) * | 2016-06-07 | 2019-08-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高周波結合による高電力静電チャック設計 |
CN111148371A (zh) * | 2018-11-06 | 2020-05-12 | 先进装配系统有限责任两合公司 | 电子板的静电夹持 |
WO2020189287A1 (ja) * | 2019-03-18 | 2020-09-24 | 日本碍子株式会社 | 静電チャック |
KR20210034115A (ko) * | 2016-06-07 | 2021-03-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 가스 홀에 애퍼쳐-감소 플러그가 있는 고 전력 정전 척 |
WO2022004211A1 (ja) * | 2020-06-29 | 2022-01-06 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP7386086B2 (ja) | 2020-01-07 | 2023-11-24 | 日本特殊陶業株式会社 | 保持装置 |
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JP6010720B1 (ja) * | 2015-01-20 | 2016-10-19 | 日本碍子株式会社 | ウエハ支持構造体 |
US20180096867A1 (en) * | 2016-09-30 | 2018-04-05 | Momentive Performance Materials Inc. | Heating apparatus with controlled thermal contact |
JP6969182B2 (ja) * | 2017-07-06 | 2021-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20190105748A1 (en) * | 2017-10-11 | 2019-04-11 | Samsung Electronics Co., Ltd. | Seal-less airlock wafer stage |
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2015
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- 2015-06-10 TW TW104118706A patent/TWI640054B/zh active
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Cited By (19)
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JP2019522889A (ja) * | 2016-06-07 | 2019-08-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高周波結合による高電力静電チャック設計 |
JP7101482B2 (ja) | 2016-06-07 | 2022-07-15 | アプライド マテリアルズ インコーポレイテッド | 高周波結合による高電力静電チャック設計 |
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KR102487566B1 (ko) | 2016-06-07 | 2023-01-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 가스 홀에 애퍼쳐-감소 플러그가 있는 고 전력 정전 척 |
KR20210034115A (ko) * | 2016-06-07 | 2021-03-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 가스 홀에 애퍼쳐-감소 플러그가 있는 고 전력 정전 척 |
JP2019501515A (ja) * | 2016-11-07 | 2019-01-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板を保持するためのキャリア、処理システムでのキャリアの使用、キャリアを用いる処理システム、及び基板の温度を制御するための方法 |
JP2018110216A (ja) * | 2017-01-05 | 2018-07-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US10600669B2 (en) | 2017-02-27 | 2020-03-24 | Shinko Electric Industries Co., Ltd. | Substrate fixture and substrate fixing device |
JP2018142589A (ja) * | 2017-02-27 | 2018-09-13 | 新光電気工業株式会社 | 基板固定具及び基板固定装置 |
KR20180099494A (ko) | 2017-02-27 | 2018-09-05 | 신꼬오덴기 고교 가부시키가이샤 | 기판 고정구 및 기판 고정 디바이스 |
JP2019114685A (ja) * | 2017-12-25 | 2019-07-11 | 日本特殊陶業株式会社 | 静電チャック |
JP7049108B2 (ja) | 2017-12-25 | 2022-04-06 | 日本特殊陶業株式会社 | 静電チャック |
CN111148371A (zh) * | 2018-11-06 | 2020-05-12 | 先进装配系统有限责任两合公司 | 电子板的静电夹持 |
WO2020189287A1 (ja) * | 2019-03-18 | 2020-09-24 | 日本碍子株式会社 | 静電チャック |
JPWO2020189287A1 (ja) * | 2019-03-18 | 2021-11-04 | 日本碍子株式会社 | 静電チャック |
KR20210089779A (ko) * | 2019-03-18 | 2021-07-16 | 엔지케이 인슐레이터 엘티디 | 정전 척 |
KR102497965B1 (ko) | 2019-03-18 | 2023-02-08 | 엔지케이 인슐레이터 엘티디 | 정전 척 |
JP7386086B2 (ja) | 2020-01-07 | 2023-11-24 | 日本特殊陶業株式会社 | 保持装置 |
WO2022004211A1 (ja) * | 2020-06-29 | 2022-01-06 | 住友大阪セメント株式会社 | 静電チャック装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI640054B (zh) | 2018-11-01 |
JP6377975B2 (ja) | 2018-08-22 |
KR102266688B1 (ko) | 2021-06-21 |
TW201613019A (en) | 2016-04-01 |
US20150371885A1 (en) | 2015-12-24 |
KR20150146408A (ko) | 2015-12-31 |
US9837297B2 (en) | 2017-12-05 |
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