JP2019501515A - 基板を保持するためのキャリア、処理システムでのキャリアの使用、キャリアを用いる処理システム、及び基板の温度を制御するための方法 - Google Patents
基板を保持するためのキャリア、処理システムでのキャリアの使用、キャリアを用いる処理システム、及び基板の温度を制御するための方法 Download PDFInfo
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- 238000000151 deposition Methods 0.000 claims description 35
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- 229910052719 titanium Inorganic materials 0.000 description 2
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- 241001465754 Metazoa Species 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67248—Temperature monitoring
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
Description
Claims (15)
- 基板(101)を保持するためのキャリア(100)であって、
第1の面(111)を有するキャリア本体(110)と、
前記第1の面(111)に設けられた接着体(120)と
を含み、前記キャリア本体(110)が、ガスを前記接着体(120)内に供給するように構成された一又は複数の導管(115)を含む、キャリア(100)。 - 前記接着体(120)が、ガスに対して透過性があるように構成されている、請求項1に記載のキャリア(100)。
- 前記接着体(120)が、複数のフィラメント(121)を含む、請求項1又は2に記載のキャリア(100)。
- 前記接着体(120)が、前記基板(101)を前記キャリア本体(110)に取り付けるように構成された乾燥接着材料を含む、請求項1から3の何れか一項に記載のキャリア(100)。
- 前記乾燥接着材料が、合成繊毛材料、特にヤモリ接着剤である、請求項4に記載のキャリア(100)。
- 前記一又は複数の導管(115)が、前記キャリア本体(110)の第2の面(112)から前記キャリア本体(110)の前記第1の面(111)まで延びるように構成され、前記第2の面(112)が、前記第1の面(111)とは反対を向いており、又は前記一又は複数の導管(115)が、前記キャリア本体(110)を通って前記一又は複数の導管(115)まで前記ガスを案内するように構成されたガス供給導管(116)に連結されている、請求項1から5の何れか一項に記載のキャリア(100)。
- 前記接着体(120)が、前記基板(101)の裏側面(101A)の少なくとも75%に相当する取付面積を有するように構成されている、請求項1から6の何れか一項に記載のキャリア(100)。
- 前記一又は複数の導管(115)が、特に規則的に、前記キャリア本体に分散された複数の導管を含む、請求項1から7の何れか一項に記載のキャリア(100)。
- 前記接着体(120)が、2以上の取付ゾーン(122)を有するように構成されている、請求項1から8の何れか一項に記載のキャリア(100)。
- 前記一又は複数の導管(115)は、前記2以上の取付ゾーン(122)の各々にガスを供給することができるように構成されている、請求項9に記載のキャリア(100)。
- 処理システム、特に材料を基板の上に堆積させるための真空堆積システムにおける、請求項1から10の何れか一項に記載のキャリア(100)の使用。
- 処理チャンバ(210)と、
処理デバイス(220)と、
請求項1から10の何れか一項に記載のキャリア(100)と
を含む処理システム(200)。 - 基板の温度を制御するための方法(300)であって、
請求項1から10の何れか一項に記載のキャリアを提供すること(310)と、
前記一又は複数の導管を通して前記接着体内にガスを供給すること(320)と、
前記接着体に取り付けられた前記基板の裏側に前記ガスを供給すること(330)と
を含む方法(300)。 - 前記一又は複数の導管を通して前記接着体内にガスを供給すること(320)が、特に実質的に均一に、前記接着体の中に前記ガスを分配することを含む、請求項13に記載の方法(300)。
- 前記接着体に取り付けられた前記基板の裏側に前記ガスを供給すること(330)が、前記基板から前記ガスに熱伝達させるために、前記基板の前記裏側に沿ってガス流を供給することを含む、請求項13又は14に記載の方法(300)。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2016/076830 WO2018082792A1 (en) | 2016-11-07 | 2016-11-07 | Carrier for holding a substrate, use of the carrier in a processing system, processing system employing the carrier, and method for controlling a temperature of a substrate |
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JP2019501515A true JP2019501515A (ja) | 2019-01-17 |
JP6620234B2 JP6620234B2 (ja) | 2019-12-11 |
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US (1) | US20190249294A1 (ja) |
JP (1) | JP6620234B2 (ja) |
KR (2) | KR20180064505A (ja) |
CN (1) | CN108292619B (ja) |
TW (1) | TWI686495B (ja) |
WO (1) | WO2018082792A1 (ja) |
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DE102018111105A1 (de) * | 2018-05-09 | 2019-11-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zum Beschichten eines bandförmigen Substrates |
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DE202016100186U1 (de) * | 2015-01-15 | 2016-02-01 | Fhr Anlagenbau Gmbh | Substrathalterung |
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JP2005101505A (ja) * | 2003-03-13 | 2005-04-14 | Ventec-Ges Fuer Venturekapital & Unternehmensberatung Mbh | 可動可搬型静電式基板保持器 |
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JP2014060242A (ja) * | 2012-09-18 | 2014-04-03 | Ulvac Japan Ltd | 搬送トレー |
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WO2018082792A1 (en) | 2018-05-11 |
US20190249294A1 (en) | 2019-08-15 |
TW201829818A (zh) | 2018-08-16 |
KR20180064505A (ko) | 2018-06-14 |
CN108292619A (zh) | 2018-07-17 |
TWI686495B (zh) | 2020-03-01 |
CN108292619B (zh) | 2023-02-24 |
KR20200133031A (ko) | 2020-11-25 |
JP6620234B2 (ja) | 2019-12-11 |
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