JP2013045989A - 静電チャック及び半導体・液晶製造装置 - Google Patents
静電チャック及び半導体・液晶製造装置 Download PDFInfo
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- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract
【解決手段】ウェハ2が載置される複数のチャック領域Rと、チャック領域Rの外側領域に設けられた凹面部Cとを備えたチャック機能部10と、チャック領域Rに対応するチャック機能部10の内部と、凹面部Cに対応するチャック機能部10の内部とにそれぞれ配置された電極40,40aとを含む。
【選択図】図3
Description
そして、静電チャック100の電極300に電圧を印加すると静電引力によってウェハ200が静電チャック100に吸着する。
図3は第1実施形態の静電チャックを示す断面図、図4は第1実施形態の静電チャックを示す平面図である。
図6は第2実施形態の静電チャックを示す断面図である。
図7は第3実施形態の静電チャックを示す断面図である。図7では、第1実施形態と同一要素については同一符号を付してその詳しい説明を省略する。
前述した第1〜第3実施形態では、ウェハを冷却するタイプの静電チャックについて説明しており、その場合は伝熱用ガスが冷却用ガスとして機能する。図8に示すように、ベースプレート20の内部に、冷却水路22の代わりに加熱機構としてヒータ電極24を設けることにより、ウェハを加熱するタイプの静電チャック1cとしてもよい。
次に、実施形態の静電チャックを備えた半導体・液晶製造装置について説明する。本実施形態の静電チャック1,1a,1b,1cは、半導体装置や液晶表示装置の製造プロセスで使用される各種の半導体・液晶製造装置に適用することができる。
Claims (6)
- 被吸着物が載置される複数のチャック領域と、前記チャック領域の外側領域に設けられた凹面部とを備えたチャック機能部と、
前記チャック領域に対応する前記チャック機能部の内部と、凹面部に対応する前記チャック機能部の内部とにそれぞれ配置された電極とを有することを特徴とする静電チャック。 - 前記チャック機能部の下に配置されて、冷却機構を備えたベースプレートをさらに有することを特徴とする請求項1に記載の静電チャック。
- 前記チャック領域及び前記凹面部の各表面に、伝熱用ガスが供給されるガス孔とそれに連通する凹部がそれぞれ設けられていることを特徴とする請求項1又は2に記載の静電チャック。
- 前記チャック領域の表面に設けられたガス孔を含むガス経路と、前記凹面部の表面に設けられたガス孔を含むガス経路とは、独立した別の経路になっていることを特徴とする請求項3に記載の静電チャック。
- チャンバと、
前記チャンバに取り付けられた静電チャックと、
被吸着物を搬送するためのトレイとを有し、
前記静電チャックは、
前記被吸着物が載置される複数のチャック領域と、前記チャック領域の外側領域に設けられた凹面部とを備えたチャック機能部と、
前記チャック領域に対応する前記チャック機能部の内部と、凹面部に対応する前記チャック機能部の内部とにそれぞれ配置された電極とを有し、
前記トレイは、
前記チャック領域に対応する部分に開口部を備え、前記静電チャックの凹面部に配置されていることを特徴とする半導体・液晶製造装置。 - 前記静電チャックは、前記チャック機能部の下に配置されて、冷却機構を備えたベースプレートをさらに有し、
前記半導体・液晶製造装置は、ドライエッチング装置であることを特徴とする請求項5に記載の半導体・液晶製造装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011184285A JP6285620B2 (ja) | 2011-08-26 | 2011-08-26 | 静電チャック及び半導体・液晶製造装置 |
TW101124751A TWI563583B (en) | 2011-08-26 | 2012-07-10 | Electrostatic chuck and semiconductor/liquid crystal manufacturing equipment |
US13/547,316 US11037811B2 (en) | 2011-08-26 | 2012-07-12 | Electrostatic chuck and semiconductor/liquid crystal manufacturing equipment |
KR1020120075809A KR102056723B1 (ko) | 2011-08-26 | 2012-07-12 | 정전 척 및 반도체·액정 제조 장치 |
CN201210273478.2A CN102956533B (zh) | 2011-08-26 | 2012-08-02 | 静电卡盘以及半导体装置或液晶显示装置的制造装置 |
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JP2011184285A JP6285620B2 (ja) | 2011-08-26 | 2011-08-26 | 静電チャック及び半導体・液晶製造装置 |
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JP2013045989A true JP2013045989A (ja) | 2013-03-04 |
JP2013045989A5 JP2013045989A5 (ja) | 2014-07-31 |
JP6285620B2 JP6285620B2 (ja) | 2018-02-28 |
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JP (1) | JP6285620B2 (ja) |
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TW (1) | TWI563583B (ja) |
Cited By (8)
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JP2016009715A (ja) * | 2014-06-23 | 2016-01-18 | 新光電気工業株式会社 | 静電吸着用トレイ、基板固定装置 |
JP2016520255A (ja) * | 2013-05-02 | 2016-07-11 | 北京北方▲微▼▲電▼子基地▲設▼▲備▼工▲芸▼研究中心有限▲責▼任公司Beijing Nmc Co.,Ltd. | 基板載置装置及びプラズマ加工装置 |
JP2017504195A (ja) * | 2013-12-31 | 2017-02-02 | 北京北方▲微▼▲電▼子基地▲設▼▲備▼工▲芸▼研究中心有限▲責▼任公司Beijing Nmc Co.,Ltd. | 静電チャック、チャンバ及び静電チャックの製造方法 |
WO2017195672A1 (ja) * | 2016-05-09 | 2017-11-16 | 株式会社 アルバック | 静電チャック、および、プラズマ処理装置 |
KR20180099494A (ko) | 2017-02-27 | 2018-09-05 | 신꼬오덴기 고교 가부시키가이샤 | 기판 고정구 및 기판 고정 디바이스 |
WO2020185395A1 (en) * | 2019-03-08 | 2020-09-17 | Applied Materials, Inc. | Electrostatic chuck for high bias radio frequency (rf) power application in a plasma processing chamber |
KR20210111364A (ko) * | 2019-02-05 | 2021-09-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 증착 프로세스들을 위한 마스크의 척킹을 위한 기판 지지부 |
US11610798B2 (en) | 2017-11-06 | 2023-03-21 | Ngk Insulators, Ltd. | Electrostatic chuck assembly, electrostatic chuck, and focus ring |
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US9668373B2 (en) * | 2013-03-15 | 2017-05-30 | Applied Materials, Inc. | Substrate support chuck cooling for deposition chamber |
JP6348321B2 (ja) * | 2013-05-17 | 2018-06-27 | キヤノンアネルバ株式会社 | エッチング装置 |
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US10030303B2 (en) * | 2014-12-19 | 2018-07-24 | Sunpower Corporation | Sputter tool |
US9633886B2 (en) * | 2015-04-16 | 2017-04-25 | Varian Semiconductor Equipment Associates, Inc. | Hybrid thermal electrostatic clamp |
WO2017029876A1 (ja) * | 2015-08-20 | 2017-02-23 | 日本碍子株式会社 | 静電チャックヒータ |
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WO2019087977A1 (ja) * | 2017-10-30 | 2019-05-09 | 日本碍子株式会社 | 静電チャック及びその製法 |
JP6965776B2 (ja) * | 2018-02-08 | 2021-11-10 | トヨタ自動車株式会社 | 静電吸着搬送装置およびその方法 |
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JP6918042B2 (ja) * | 2019-03-26 | 2021-08-11 | 日本碍子株式会社 | ウエハ載置装置 |
TW202137326A (zh) * | 2020-03-03 | 2021-10-01 | 日商東京威力科創股份有限公司 | 基板支持台、電漿處理系統及環狀構件之安裝方法 |
CN111900118B (zh) * | 2020-06-19 | 2023-04-07 | 中国科学院微电子研究所 | 晶圆转移机构、半导体制造设备以及晶圆转移方法 |
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- 2011-08-26 JP JP2011184285A patent/JP6285620B2/ja active Active
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- 2012-07-10 TW TW101124751A patent/TWI563583B/zh active
- 2012-07-12 US US13/547,316 patent/US11037811B2/en active Active
- 2012-07-12 KR KR1020120075809A patent/KR102056723B1/ko active IP Right Grant
- 2012-08-02 CN CN201210273478.2A patent/CN102956533B/zh active Active
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Also Published As
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CN102956533A (zh) | 2013-03-06 |
TW201310564A (zh) | 2013-03-01 |
KR102056723B1 (ko) | 2019-12-17 |
JP6285620B2 (ja) | 2018-02-28 |
US20130048217A1 (en) | 2013-02-28 |
US11037811B2 (en) | 2021-06-15 |
TWI563583B (en) | 2016-12-21 |
KR20130023062A (ko) | 2013-03-07 |
CN102956533B (zh) | 2018-04-06 |
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