WO2020189287A1 - 静電チャック - Google Patents
静電チャック Download PDFInfo
- Publication number
- WO2020189287A1 WO2020189287A1 PCT/JP2020/009189 JP2020009189W WO2020189287A1 WO 2020189287 A1 WO2020189287 A1 WO 2020189287A1 JP 2020009189 W JP2020009189 W JP 2020009189W WO 2020189287 A1 WO2020189287 A1 WO 2020189287A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plate
- positive
- electrode
- negative
- electrostatic chuck
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Definitions
- the present invention relates to an electrostatic chuck.
- Patent Document 1 discloses such an electrostatic chuck in which a pair of positive and negative thin film electrodes are patterned on a circular plate made of ceramic.
- the pattern shape of each electrode is a comb shape whose outer peripheral edge is arcuate, and the band-shaped comb teeth of both electrodes are alternately intertwined.
- the present invention has been made to solve such a problem, and an object of the present invention is to reduce variations in adsorption force in a wafer mounting surface.
- the electrostatic chuck of the present invention A ceramic plate with a wafer mounting surface and A plurality of through holes penetrating the plate in the thickness direction, A pair of positive and negative electrodes provided on the plate for generating electrostatic force, It is an electrostatic chuck equipped with The plate has a division area that is virtually divided into the number of through holes.
- the positive / negative pair of electrodes has a pair of positive / negative spiral electrode portions provided in parallel for each of the divided regions so as to spread from each of the positive electrode starting point and the negative electrode starting point adjacent to the through hole to the entire divided region.
- the positive electrode of the pair of positive and negative electrodes is formed by connecting the positive spiral electrode portions of each divided region to either the central portion or the outer peripheral portion of the plate.
- the negative electrode of the pair of positive and negative electrodes is formed by connecting the negative spiral electrode portions of each divided region to either the central portion or the outer peripheral portion of the plate.
- the ceramic plate is virtually divided into the same number of division areas as the number of through holes.
- the pair of positive and negative electrodes has a pair of positive and negative spiral electrode portions provided in parallel for each divided region so as to spread from each of the positive electrode starting point and the negative electrode starting point adjacent to the through hole to the entire divided region.
- the spiral electrode portion of the positive electrode and the spiral electrode portion of the negative electrode are in a staggered and intricate form.
- the positive electrode is formed by connecting the positive spiral electrode portion of each divided region to either the central portion or the outer peripheral portion of the plate
- the negative electrode is formed by connecting the negative spiral electrode portion of each divided region to the plate. It is connected to either the central portion or the outer peripheral portion. Therefore, it is not necessary for the positive electrode and the negative electrode to avoid the through hole in an arc shape, and the regularity of the electrode pattern can be maintained well. Therefore, it is possible to reduce the variation in the suction force in the wafer mounting surface.
- the diameter of the through hole may be the same as or larger than the distance between the electrodes of the adjacent positive electrode and the negative electrode.
- the diameter of the through hole may be the same as or larger than the distance between the electrodes of the adjacent positive electrode and the negative electrode.
- the line width of the positive electrode is the same as the line width of the negative electrode, and the diameter of the through hole may be the same as or larger than the sum of the distance between the electrodes and the line width.
- the plate is circular, the plurality of through holes are provided at equal intervals on concentric circles of the plate, and the divided regions are formed by line segments in the radial direction of the plate.
- the plate may be a region equally divided by the number of through holes. Examples of such through holes include holes through which lift pins for raising and lowering wafers are inserted.
- the “equal interval” does not necessarily have to be exactly the same interval, and may include an error (for example, ⁇ 2 to 3%). The same applies to "equal division”.
- FIG. 5 is a cross-sectional view when the plate 4 is cut on a surface including a positive electrode 6 and a negative electrode 8. Explanatory drawing which shows the state of the comb teeth 106, 108 around a lift pin hole 110.
- FIG. 1 is a perspective view of the electrostatic chuck 2
- FIG. 2 is a cross-sectional view when the plate 4 is cut on a surface including a positive electrode 6 and a negative electrode 8.
- FIG. 2 hatching of the cross section of the plate 4 is omitted for convenience.
- the electrostatic chuck 2 includes a plate 4, lift pin holes 10, 20 and 30, divided regions A1 to A3, and a pair of positive and negative electrodes (positive electrode 6 and negative electrode 8) for electrostatic adsorption.
- the plate 4 is a circular plate made of ceramics (for example, made of alumina or aluminum nitride).
- a wafer mounting surface 4a on which the wafer W is mounted is provided on the surface of the plate 4.
- the lift pin holes 10, 20, and 30 are holes that penetrate the plate 4 in the thickness direction, and are provided on concentric circles with the plate 4 at equal intervals.
- the division areas A1, A2, and A3 are areas in which the plate 4 is virtually divided into the number of lift pin holes 10, 20, and 30 (the area surrounded by the dotted line in FIG. 2).
- the divided regions A1, A2, and A3 are fan-shaped regions having a central angle of about 120 °, which is obtained by dividing the circular plate 4 into three by a line segment in the radial direction of the plate 4.
- the positive electrode 6 is formed by connecting the positive spiral electrode portions 16, 26, 36 of the divided regions A1, A2, A3 with the connecting portions 41, 42, 43, and the negative electrode 8 is formed by connecting the positive spiral electrode portions 16, 26, 36 of the divided regions A1, A2, A3.
- the negative spiral electrode portions 18, 28, 38 of A3 are connected by the connecting portion 45.
- a pair of positive and negative spiral electrodes are formed from each of the positive electrode starting point 16a and the negative electrode starting point 18a close to the lift pin hole 10 to each of the positive electrode end point 16b and the negative electrode end point 18b so as to cover the entire divided region A1.
- Parts 16 and 18 are provided in parallel. Therefore, the positive spiral electrode portion 16 and the negative spiral electrode portion 18 in the divided region A1 are alternately intertwined.
- the shape of the vortex of the spiral electrode portions 16 and 18 is substantially similar to the fan shape of the divided region A1.
- a pair of positive and negative spiral electrodes are formed from each of the positive electrode starting point 26a and the negative electrode starting point 28a close to the lift pin hole 20 to each of the positive electrode end point 26b and the negative electrode end point 28b so as to cover the entire divided region A2.
- Parts 26 and 28 are provided in parallel. Therefore, the positive spiral electrode portion 26 and the negative spiral electrode portion 28 in the divided region A2 are alternately intertwined.
- the shape of the vortex of the spiral electrode portions 26 and 28 is substantially similar to the fan shape of the divided region A2.
- a pair of positive and negative spiral electrodes are formed from each of the positive electrode starting point 36a and the negative electrode starting point 38a close to the lift pin hole 30 to each of the positive electrode end point 36b and the negative electrode end point 38b so as to cover the entire divided region A3.
- the portions 36 and 38 are provided in parallel. Therefore, the positive spiral electrode portion 36 and the negative spiral electrode portion 38 in the divided region A3 are alternately intertwined.
- the shape of the vortex of the spiral electrode portions 36 and 38 is substantially similar to the fan shape of the divided region A3.
- the positive spiral electrode portion 16 of the divided region A1 and the positive spiral electrode portion 26 of the divided region A2 are connected by a connecting portion 41 provided on the outer peripheral portion of the plate 4, and the positive spiral electrode portion of the divided region A2 is connected.
- the portion 26 and the positive spiral electrode portion 36 of the divided region A3 are connected by a connecting portion 42 provided on the outer peripheral portion of the plate 4, and the positive spiral electrode portion 36 of the divided region A3 and the positive spiral electrode portion 36 of the divided region A1 are connected.
- the spiral electrode portion 16 is connected to the spiral electrode portion 16 by a connecting portion 43 provided on the outer peripheral portion of the plate 4.
- the positive spiral electrodes 16, 26, 36 of the divided regions A1, A2, and A3 are connected by the connecting portions 41, 42, 43 on the outer peripheral portion of the plate 4 in this way.
- the negative spiral electrode portion 18 of the divided region A1, the negative spiral electrode portion 28 of the divided region A2, and the negative spiral electrode portion 38 of the divided region A3 are connected in a triangular shape provided in the central portion of the plate 4. It is connected by a part 45.
- the negative spiral electrodes 18, 28, 38 of the divided regions A1, A2, and A3 are connected by the connecting portion 45 at the center of the plate 4 in this way.
- the diameter ⁇ of the lift pin holes 10, 20, and 30 is equal to or larger than the distance d between the electrodes of the adjacent positive electrode 6 and the negative electrode 8 ( ⁇ ⁇ d). Further, the line width w of the positive electrode 6 is the same as the line width w of the negative electrode 8. The sum (w + d) of the line width w and the distance d between the electrodes is preferably 1 mm or more and 4 mm or less. The distance d between the electrodes is preferably 2 mm or less. The diameter ⁇ of each lift pin hole 10, 20, 30 is preferably 1 mm or more.
- the electrostatic chuck 2 is arranged and used in a chamber (not shown).
- a disk-shaped wafer W is placed on the wafer mounting surface 4a of the electrostatic chuck 2.
- the wafer W is attracted to the wafer mounting surface 4a by electrostatic force when a voltage is applied between the positive electrode 6 and the negative electrode 8.
- Examples of the electrostatic force include Coulomb force, gradient force, and Johnson-Labeck force.
- the wafer W is an insulator, the wafer W is attracted to the wafer mounting surface 4a mainly by the gradient force. .. In order to obtain the gradient force, it is preferable to make the line width w and the distance d between the electrodes as small as possible.
- the inside of the chamber is set to have a predetermined vacuum atmosphere (or decompression atmosphere), and process gas is supplied from a shower head (not shown) provided on the ceiling surface of the chamber. While supplying, high-frequency power is supplied between the RF electrode (not shown) embedded in the plate 4 and the shower head to generate plasma. Then, the plasma is used to perform CVD film formation or etching on the wafer.
- the positive electrode 6 and the negative electrode 8 do not need to avoid the lift pin holes 10, 20, and 30 in an arc shape, and maintain good regularity of the electrode pattern. It is possible to reduce the density difference of the electrode arrangement. Therefore, it is possible to reduce the variation in the suction force in the wafer mounting surface 4a.
- the diameter ⁇ of the lift pin holes 10, 20, and 30 is the same as or larger than the distance d between the electrodes. In this case, if a lift pin hole is to be provided between the adjacent positive electrode 6 and the negative electrode 8, at least one of the positive electrode 6 and the negative electrode 8 interferes with the lift pin hole, so that it is necessary to bypass the lift pin hole. Therefore, it is highly significant to apply the present invention.
- a plurality of gas supply holes penetrating the plate 4 in the thickness direction may be provided.
- the gas supply hole is for supplying a gas for heat conduction (for example, He gas) to the back surface of the wafer W, and its diameter is smaller than the distance d between the electrodes.
- a gas for heat conduction for example, He gas
- the gas supply hole can be provided between the adjacent positive electrode 6 and the negative electrode 8.
- the temperature of the wafer W may be controlled by embedding a heater electrode (resistive heating element) in the plate 4 and controlling the electric power supplied to the heater electrode.
- the plate 4 may be divided into a plurality of zones, and independent heater electrodes may be provided for each zone. In this way, the temperature can be controlled for each zone.
- the diameter ⁇ of the lift pin holes 10, 20, and 30 is the same as or larger than the inter-electrode distance d, but may be smaller than the inter-electrode distance d. It is meaningful to apply the present invention when it is difficult to provide a lift pin hole between the adjacent positive electrode 6 and the negative electrode 8 even if the diameter ⁇ is smaller than the distance d between the electrodes.
- lift pin holes 10, 20, and 30 are exemplified as through holes of the present invention, but the holes are not particularly limited to lift pin holes.
- the gas supply hole described above may be the through hole of the present invention.
- the gas supply hole may not be provided between the adjacent positive electrode 6 and the negative electrode 8. It is meaningful to adopt it as a through hole of the invention.
- the positive electrode 6 may be the negative electrode and the negative electrode 8 may be the positive electrode.
- the negative spiral electrode portion is connected at the outer peripheral portion of the plate 4, and the positive spiral electrode portion is connected at the central portion of the plate 4.
- a metal cooling plate may be attached to the back surface of the plate 4 of the electrostatic chuck 2 (the surface opposite to the wafer mounting surface 4a).
- a refrigerant flow path may be provided inside the cooling plate.
- the shape of the plate 4 is circular, but the shape is not particularly limited to a circular shape, and may be, for example, a rectangle or a square.
- the plate 4 is provided with three lift pin holes 10, 20, and 30 is illustrated, but four or more lift pin holes may be provided.
- the divided regions are four, and the shape is a fan shape with a central angle of about 90 °.
- the three lift pin holes 10, 20, and 30 are provided on the concentric circles of the plate 4 at equal intervals, but the present invention is not particularly limited to this.
- the three lift pin holes may be provided at positions deviating from the concentric circles of the plate 4 or may be provided on the concentric circles of the plate 4 at different intervals.
- the present invention can be used, for example, to attract and hold a wafer by utilizing electrostatic force during a semiconductor manufacturing process.
- Electrostatic chuck 4 Plate, 4a Wafer mounting surface, 6 Positive electrode, 8 Negative electrode, 10, 20, 30 Lift pin hole, 16, 26, 36 Positive spiral electrode part, 16a, 26a, 36a Positive electrode starting point, 16b, 26b, 36b positive electrode end point, 18, 28, 38 negative spiral electrode part, 18a, 28a, 38a negative electrode starting point, 18b, 28b, 38b negative electrode end point, 41, 42, 43, 45 connecting part, 106 positive electrode comb tooth, 108 Negative electrode comb teeth, 110 lift pin holes, A1, A2, A3 division areas, W wafer.
Abstract
Description
ウエハ載置面を有するセラミックス製のプレートと、
前記プレートを厚さ方向に貫通する複数の貫通穴と、
前記プレートに設けられ、静電力を発生させるための正負一対の電極と、
を備えた静電チャックであって、
前記プレートは、前記貫通穴の数に仮想的に分割された分割領域を有し、
前記正負一対の電極は、前記分割領域ごとに、前記貫通穴に近接する正極起点及び負極起点のそれぞれから前記分割領域の全体に行き渡るように並行に設けられた正負一対の渦巻き状電極部を有し、
前記正負一対の電極のうちの正極は、各分割領域の正の渦巻き状電極部を前記プレートの中央部及び外周部のいずれか一方で連結したものであり、
前記正負一対の電極のうちの前記負極は、各分割領域の負の渦巻き状電極部を前記プレートの中央部及び外周部のいずれか他方で連結したものである。
Claims (4)
- ウエハ載置面を有するセラミックス製のプレートと、
前記プレートを厚さ方向に貫通する複数の貫通穴と、
前記プレートに設けられ、静電力を発生させるための正負一対の電極と、
を備えた静電チャックであって、
前記プレートは、前記貫通穴の数に仮想的に分割された分割領域を有し、
前記正負一対の電極は、前記分割領域ごとに、前記貫通穴に近接する正極起点及び負極起点のそれぞれから前記分割領域の全体に行き渡るように並行に設けられた正負一対の渦巻き状電極部を有し、
前記正負一対の電極のうちの正極は、各分割領域の正の渦巻き状電極部を前記プレートの中央部及び外周部のいずれか一方で連結したものであり、
前記正負一対の電極のうちの前記負極は、各分割領域の負の渦巻き状電極部を前記プレートの中央部及び外周部のいずれか他方で連結したものである、
静電チャック。 - 前記貫通穴の直径は、隣合う前記正極と前記負極との電極間距離よりも大きい、
請求項1に記載の静電チャック。 - 前記正極の線幅は、前記負極の線幅と同じである、
請求項2に記載の静電チャック。 - 前記プレートは、円形であり、
前記複数の貫通穴は、前記プレートの同心円上に等間隔に設けられ、
前記分割領域は、前記プレートの半径方向の線分によって前記プレートを前記貫通穴の数に等分した領域である、
請求項1~3のいずれか1項に記載の静電チャック。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020217019535A KR102497965B1 (ko) | 2019-03-18 | 2020-03-04 | 정전 척 |
CN202080021416.5A CN113574652B (zh) | 2019-03-18 | 2020-03-04 | 静电卡盘 |
JP2021507176A JP7110482B2 (ja) | 2019-03-18 | 2020-03-04 | 静電チャック |
US17/304,749 US20210320025A1 (en) | 2019-03-18 | 2021-06-25 | Electrostatic chuck |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019050246 | 2019-03-18 | ||
JP2019-050246 | 2019-03-18 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/304,749 Continuation US20210320025A1 (en) | 2019-03-18 | 2021-06-25 | Electrostatic chuck |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2020189287A1 true WO2020189287A1 (ja) | 2020-09-24 |
Family
ID=72520685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2020/009189 WO2020189287A1 (ja) | 2019-03-18 | 2020-03-04 | 静電チャック |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210320025A1 (ja) |
JP (1) | JP7110482B2 (ja) |
KR (1) | KR102497965B1 (ja) |
CN (1) | CN113574652B (ja) |
TW (1) | TWI736168B (ja) |
WO (1) | WO2020189287A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210175054A1 (en) * | 2019-12-10 | 2021-06-10 | Shinko Electric Industries Co., Ltd. | Electrostatic chuck and substrate fixing device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003007810A (ja) * | 2001-06-26 | 2003-01-10 | Mitsubishi Heavy Ind Ltd | 静電チャック |
JP2016009715A (ja) * | 2014-06-23 | 2016-01-18 | 新光電気工業株式会社 | 静電吸着用トレイ、基板固定装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3095790B2 (ja) | 1991-01-22 | 2000-10-10 | 富士電機株式会社 | 静電チャック |
TW334609B (en) * | 1996-09-19 | 1998-06-21 | Hitachi Ltd | Electrostatic chuck, method and device for processing sanyle use the same |
JP3921746B2 (ja) * | 1997-07-31 | 2007-05-30 | ソニー株式会社 | 静電チャック |
JP3323135B2 (ja) * | 1998-08-31 | 2002-09-09 | 京セラ株式会社 | 静電チャック |
JP2001144168A (ja) * | 1999-11-16 | 2001-05-25 | Nikon Corp | 静電チャック、それを有する荷電粒子線露光装置、ウエハ保持方法及びそれを用いたデバイス製造方法 |
JP2002026113A (ja) * | 2000-07-10 | 2002-01-25 | Toshiba Corp | ホットプレート及び半導体装置の製造方法 |
US6483690B1 (en) * | 2001-06-28 | 2002-11-19 | Lam Research Corporation | Ceramic electrostatic chuck assembly and method of making |
JP4119211B2 (ja) * | 2002-09-13 | 2008-07-16 | 日本碍子株式会社 | 加熱装置 |
JP2004179364A (ja) * | 2002-11-27 | 2004-06-24 | Kyocera Corp | 静電チャック |
DE60237173D1 (de) * | 2002-12-26 | 2010-09-09 | Mitsubishi Heavy Ind Ltd | Elektrostatisches futter |
JP2008042140A (ja) * | 2006-08-10 | 2008-02-21 | Tokyo Electron Ltd | 静電チャック装置 |
JP4852434B2 (ja) * | 2007-01-16 | 2012-01-11 | 株式会社日本Aeパワーシステムズ | ガス絶縁開閉器 |
DE102012212465B3 (de) * | 2012-07-17 | 2013-11-07 | Trumpf Werkzeugmaschinen Gmbh + Co. Kg | Elektroadhäsionsgreifer zum Halten von Werkstücken |
JP2014057013A (ja) * | 2012-09-14 | 2014-03-27 | Covalent Materials Corp | 静電チャック |
JP2017195276A (ja) * | 2016-04-20 | 2017-10-26 | 日本特殊陶業株式会社 | 保持装置の製造方法 |
WO2018016384A1 (ja) * | 2016-07-19 | 2018-01-25 | 日本碍子株式会社 | 静電チャックヒータ |
JP2018060905A (ja) * | 2016-10-05 | 2018-04-12 | 株式会社ディスコ | 静電チャックプレート及び静電チャックプレートの製造方法 |
JP6758175B2 (ja) * | 2016-12-21 | 2020-09-23 | 日本特殊陶業株式会社 | 静電チャック |
US11024529B2 (en) * | 2018-04-04 | 2021-06-01 | Applied Materials, Inc. | System and method for residual voltage control of electrostatic chucking assemblies |
-
2020
- 2020-03-04 CN CN202080021416.5A patent/CN113574652B/zh active Active
- 2020-03-04 WO PCT/JP2020/009189 patent/WO2020189287A1/ja active Application Filing
- 2020-03-04 KR KR1020217019535A patent/KR102497965B1/ko active IP Right Grant
- 2020-03-04 JP JP2021507176A patent/JP7110482B2/ja active Active
- 2020-03-09 TW TW109107654A patent/TWI736168B/zh active
-
2021
- 2021-06-25 US US17/304,749 patent/US20210320025A1/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003007810A (ja) * | 2001-06-26 | 2003-01-10 | Mitsubishi Heavy Ind Ltd | 静電チャック |
JP2016009715A (ja) * | 2014-06-23 | 2016-01-18 | 新光電気工業株式会社 | 静電吸着用トレイ、基板固定装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210175054A1 (en) * | 2019-12-10 | 2021-06-10 | Shinko Electric Industries Co., Ltd. | Electrostatic chuck and substrate fixing device |
JP7296869B2 (ja) | 2019-12-10 | 2023-06-23 | 新光電気工業株式会社 | 静電チャック、基板固定装置 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2020189287A1 (ja) | 2021-11-04 |
KR102497965B1 (ko) | 2023-02-08 |
US20210320025A1 (en) | 2021-10-14 |
KR20210089779A (ko) | 2021-07-16 |
CN113574652A (zh) | 2021-10-29 |
CN113574652B (zh) | 2023-09-01 |
JP7110482B2 (ja) | 2022-08-01 |
TWI736168B (zh) | 2021-08-11 |
TW202040745A (zh) | 2020-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8636872B2 (en) | Upper electrode and plasma processing apparatus | |
TWI673823B (zh) | 陶瓷加熱器和具有增強的晶片邊緣效能的esc | |
JP4828585B2 (ja) | プラズマ処理装置 | |
TWI710000B (zh) | 陶瓷加熱器 | |
JP4312394B2 (ja) | 静電チャックおよび基板処理装置 | |
TWI643289B (zh) | 靜電夾盤及使用在靜電夾盤中之基座構件 | |
JP6878616B2 (ja) | ボトムおよびミドルエッジリング | |
WO2013047647A1 (ja) | 交流駆動静電チャック | |
TW200524075A (en) | Electrostatic sucker | |
TW202040744A (zh) | 局部加熱之多區域基材支撐座 | |
JP2007081404A (ja) | マスクを備えたプラズマcvd成膜装置 | |
JP2014509783A (ja) | ハイブリッドセラミックシャワーヘッド | |
TW201626453A (zh) | 用於使均勻的射頻功率流過之具有電性導通密合墊片的靜電夾持組件 | |
TW201946203A (zh) | 靜電夾頭加熱器 | |
WO2020153079A1 (ja) | セラミックヒータ | |
WO2020189287A1 (ja) | 静電チャック | |
JP3145664B2 (ja) | ウエハ加熱装置 | |
KR101814554B1 (ko) | 에지전극이 내장된 정전척 및 그 제조방법 | |
WO2020153086A1 (ja) | セラミックヒータ | |
JP2017212332A (ja) | 電極内蔵型載置台構造 | |
US20220108909A1 (en) | Member for semicondutor manufacturing apparatus | |
JP4495687B2 (ja) | 静電チャック | |
TW201324673A (zh) | 控制所負載基板溫度的靜電卡盤及等離子體處理裝置 | |
TWI677938B (zh) | 加熱的基板支撐件 | |
KR20240008937A (ko) | 에지 불균일성 튜닝을 위한 낮은 임피던스 전류 경로 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20773574 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2021507176 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20217019535 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20773574 Country of ref document: EP Kind code of ref document: A1 |