JP6010720B1 - ウエハ支持構造体 - Google Patents
ウエハ支持構造体 Download PDFInfo
- Publication number
- JP6010720B1 JP6010720B1 JP2016520171A JP2016520171A JP6010720B1 JP 6010720 B1 JP6010720 B1 JP 6010720B1 JP 2016520171 A JP2016520171 A JP 2016520171A JP 2016520171 A JP2016520171 A JP 2016520171A JP 6010720 B1 JP6010720 B1 JP 6010720B1
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- tray
- plate
- support structure
- side electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
ウエハを載置するウエハ載置部を複数備えたセラミック製のトレイプレートがセラミック製のベースプレートの上面に配置されたウエハ支持構造体であって、
前記ベースプレートは、ベース側電極を内蔵し、
前記トレイプレートは、トレイ側電極を内蔵し、
前記ウエハ載置部に前記ウエハを載置した状態で前記ベース側電極及び前記トレイ側電極に印加する電圧を調整することにより、前記ベースプレートと前記トレイプレートとを互いに引き寄せる静電気的な力を発生させると共に前記トレイプレートと前記ウエハとを互いに引き寄せる静電気的な力を発生させる、
ものである。
本発明のウエハ支持構造体の一例を図1及び図2を用いて以下に説明する。図1は、第1実施形態のウエハ支持構造体10の縦断面図、図2は、ウエハ支持構造体10の平面図である。
第2実施形態のウエハ支持構造体30は、図3に示すように、トレイプレート12のトレイ側電極の構成を変更したこと以外は、ウエハ支持構造体10と同様である。具体的には、ウエハ支持構造体30は、トレイプレート12に内蔵したトレイ側電極をジグザグ形状の負極18aと正極18bとで構成し、これらを互いに非接触状態を保ちつつ交互に入り込むように配置した。また、負極18aに給電ピン17を接続し、正極18bに給電ピン19を接続した。給電ピン19はベースプレート20を貫通する絶縁スリーブ27を挿通するようにした。更に、給電ピン17,19には、それぞれ直流電源DC3,DC4の電圧を印加するようにした。ここで、トレイプレート12を上方から見たときの透視図を図4〜図6に示す。図4は2インチのウエハWをトレイプレート12に21個載置した例、図5及び図6は4インチのウエハWをトレイプレート12に7個載置した例である。各図において、負極18aを細かいメッシュ、正極18bを粗いメッシュで示した。負極18aと正極18bとの間隔は、特に限定するものではないが、例えば2〜6mmにすればよい。また、トレイ側電極18の電極端(外周端)とトレイプレート12との距離も、特に限定するものではないが、例えば1〜4mmとするのが好ましい。図4〜図6のいずれも、1つのウエハWをみたときに負極18aと正極18bの面積比が0.7〜1:0.7〜1(図4〜図6では1:1)となるように設定した。このウエハ支持構造体30を使用するにあたっては、まず、各ウエハ載置部14にウエハWを載置する。そして、給電ピン24a,24bにそれぞれ直流電源DC1,DC2の電圧を印加し、給電ピン17,19に直流電源DC3,DC4の電圧を印加する。また、図示しない平行平板に高周波電圧を印加してウエハWの上方にプラズマを発生させる。これにより、ベース側電極22とトレイプレート12のめっき層16との間でJR力が発生し、トレイ側電極(負極18aと正極18b)と各ウエハWとの間でクーロン力が発生する。したがって、ウエハ支持構造体10と同様の効果が得られる。また、1つのウエハWをみたときに負極18aと正極18bの面積比が0.7〜1:0.7〜1となるようにしたため、各ウエハWは吸着力の強いところと弱いところが生じにくくなり、ウエハWの温度分布を小さくすることができる。
第3実施形態のウエハ支持構造体40は、図7に示すように、トレイプレート12のめっき層16を形成しなかったこと、ベースプレート20のベース側電極の構成を変更したこと以外は、ウエハ支持構造体10と同様である。具体的には、ウエハ支持構造体40は、トレイプレート12の下面にめっき層16を形成せず直接ベースプレート20に載置した。また、ベースプレート20のベース側電極42は1枚の円盤状の電極とし、これをアースピン42aで接地した。ベース側電極42は、上面から0.5±3mmに配置した。また、トレイ側電極18は、ウエハ載置面14の表面及びトレイプレート12の下面から0.35±0.05mmに配置した。このウエハ支持構造体40を使用するにあたっては、まず、各ウエハ載置部14にウエハWを載置する。そして、給電ピン17にそれぞれ直流電源DC1の電圧を印加する。また、図示しない平行平板に高周波電圧を印加してウエハWの上方にプラズマを発生させる。プラズマは、ウエハWのグランド電極の役割を果たす。これにより、ベース側電極42とトレイ側電極18との間でクーロン力が発生し、トレイ側電極18と各ウエハWとの間でクーロン力が発生する。したがって、ウエハ支持構造体10と同様の効果が得られる。なお、トレイプレート12の使用温度における体積抵抗率は、1×1015Ωcm以上とするのが好ましい。
Claims (5)
- ウエハを載置するウエハ載置部を複数備えたセラミック製のトレイプレートがセラミック製のベースプレートの上面に配置されたウエハ支持構造体であって、
前記ベースプレートは、ベース側電極を内蔵し、
前記トレイプレートは、トレイ側電極を内蔵し、
前記ウエハ載置部に前記ウエハを載置した状態で前記ベース側電極及び前記トレイ側電極に印加する電圧を調整することにより、前記ベースプレートと前記トレイプレートとを互いに引き寄せる静電気的な力を発生させると共に前記トレイプレートと前記ウエハとを互いに引き寄せる静電気的な力を発生させる、
ウエハ支持構造体。 - 前記トレイプレートは、前記ベースプレートと対向する面に金属層を有し、
前記ウエハ載置部に前記ウエハを載置した状態で前記ベース側電極及び前記トレイ側電極の両方に電圧を印加することにより、前記ベースプレートと前記トレイプレートの前記金属層とを互いに引き寄せる静電気的な力を発生させると共に、前記トレイプレートと前記ウエハとを互いに引き寄せる静電気的な力を発生させる、
請求項1に記載のウエハ支持構造体。 - 前記トレイプレートは、前記ベースプレートと対向する面に金属層を有さず、
前記ウエハ載置部に前記ウエハを載置した状態で前記トレイ側電極に電圧を印加することにより、前記ベースプレートと前記トレイプレートとを互いに引き寄せる静電気的な力を発生させると共に、前記トレイプレートと前記ウエハとを互いに引き寄せる静電気的な力を発生させる、
請求項1に記載のウエハ支持構造体。 - 前記トレイプレートは、Al2O3製であり、
前記ベースプレートは、AlN製である、
請求項1〜3のいずれか1項に記載のウエハ支持構造体。 - 前記トレイ側電極は、負極と正極とを有する双極構造であり、各ウエハ載置部における前記負極と前記正極との面積比は0.7〜1:0.7〜1である、
請求項1〜4のいずれか1項に記載のウエハ支持構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562105371P | 2015-01-20 | 2015-01-20 | |
US62/105371 | 2015-01-20 | ||
PCT/JP2016/050817 WO2016117427A1 (ja) | 2015-01-20 | 2016-01-13 | ウエハ支持構造体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6010720B1 true JP6010720B1 (ja) | 2016-10-19 |
JPWO2016117427A1 JPWO2016117427A1 (ja) | 2017-04-27 |
Family
ID=56416974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016520171A Active JP6010720B1 (ja) | 2015-01-20 | 2016-01-13 | ウエハ支持構造体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10332774B2 (ja) |
JP (1) | JP6010720B1 (ja) |
KR (1) | KR101910727B1 (ja) |
CN (1) | CN106233450B (ja) |
TW (1) | TWI584407B (ja) |
WO (1) | WO2016117427A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6714562B2 (ja) * | 2017-09-20 | 2020-06-24 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004095665A (ja) * | 2002-08-29 | 2004-03-25 | Tokyo Electron Ltd | 静電吸着装置および処理装置 |
WO2011151996A1 (ja) * | 2010-06-01 | 2011-12-08 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2014534620A (ja) * | 2011-10-06 | 2014-12-18 | エーエスエムエル ネザーランズ ビー.ブイ. | チャック、リソグラフィ装置及びチャックを使用する方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4256503B2 (ja) | 1997-10-30 | 2009-04-22 | 東京エレクトロン株式会社 | 真空処理装置 |
EP1132956A4 (en) | 1998-10-29 | 2005-04-27 | Tokyo Electron Ltd | VACUUM GENERATOR UNIT |
JP2003124298A (ja) * | 2001-10-17 | 2003-04-25 | Anelva Corp | プラズマ支援ウェハー処理反応容器の二重静電チャックウェハーステージ |
JP4482472B2 (ja) * | 2005-03-24 | 2010-06-16 | 日本碍子株式会社 | 静電チャック及びその製造方法 |
KR100663749B1 (ko) | 2005-04-28 | 2007-01-03 | 에피밸리 주식회사 | 발광소자 기판용 서셉터 |
US8961691B2 (en) | 2008-09-04 | 2015-02-24 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, computer readable storage medium for storing a program causing the apparatus to perform the method |
JP5173684B2 (ja) | 2008-09-04 | 2013-04-03 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、並びにこの成膜方法を成膜装置に実施させるプログラム及びこれを記憶するコンピュータ可読記憶媒体 |
KR101331372B1 (ko) * | 2009-02-18 | 2013-11-20 | 가부시키가이샤 알박 | 웨이퍼 반송용 트레이 및 이 트레이 상에 웨이퍼를 고정시키는 방법 |
WO2010109848A1 (ja) * | 2009-03-26 | 2010-09-30 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2011114178A (ja) * | 2009-11-27 | 2011-06-09 | Samco Inc | プラズマ処理装置及びプラズマ処理方法 |
JP6109832B2 (ja) * | 2011-09-30 | 2017-04-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 静電チャック |
US8988848B2 (en) | 2011-12-15 | 2015-03-24 | Applied Materials, Inc. | Extended and independent RF powered cathode substrate for extreme edge tunability |
JP6377975B2 (ja) * | 2014-06-23 | 2018-08-22 | 新光電気工業株式会社 | 基板固定装置 |
-
2016
- 2016-01-13 KR KR1020167030451A patent/KR101910727B1/ko active IP Right Grant
- 2016-01-13 WO PCT/JP2016/050817 patent/WO2016117427A1/ja active Application Filing
- 2016-01-13 CN CN201680001162.4A patent/CN106233450B/zh active Active
- 2016-01-13 JP JP2016520171A patent/JP6010720B1/ja active Active
- 2016-01-18 TW TW105101347A patent/TWI584407B/zh active
- 2016-10-27 US US15/335,839 patent/US10332774B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004095665A (ja) * | 2002-08-29 | 2004-03-25 | Tokyo Electron Ltd | 静電吸着装置および処理装置 |
WO2011151996A1 (ja) * | 2010-06-01 | 2011-12-08 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2014534620A (ja) * | 2011-10-06 | 2014-12-18 | エーエスエムエル ネザーランズ ビー.ブイ. | チャック、リソグラフィ装置及びチャックを使用する方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2016117427A1 (ja) | 2016-07-28 |
JPWO2016117427A1 (ja) | 2017-04-27 |
KR101910727B1 (ko) | 2018-10-22 |
CN106233450A (zh) | 2016-12-14 |
US10332774B2 (en) | 2019-06-25 |
US20170047239A1 (en) | 2017-02-16 |
TWI584407B (zh) | 2017-05-21 |
KR20160138285A (ko) | 2016-12-02 |
CN106233450B (zh) | 2018-12-28 |
TW201639071A (zh) | 2016-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6441927B2 (ja) | 局部的に加熱されるマルチゾーン式の基板支持体 | |
US10373853B2 (en) | Electrostatic chuck and wafer processing apparatus | |
TW577861B (en) | Electrostatic chuck | |
TW527264B (en) | Ceramic electrostatic chuck assembly and method of making | |
JP2001035907A (ja) | 吸着装置 | |
US20150371885A1 (en) | Tray and wafer holding apparatus | |
JP2004538633A (ja) | 半導体処理反応室用シャワーヘッド電極構造 | |
JP6251461B1 (ja) | 静電チャックヒータ | |
TW200810010A (en) | Electrostatic chuck | |
US20090041980A1 (en) | Electrostatic Chuck and Electrode Sheet for Electrostatic Chuck | |
JP2002222851A (ja) | 静電チャックおよび基板処理装置 | |
TW201838089A (zh) | 靜電吸盤 | |
JP2000323558A (ja) | 静電吸着装置 | |
JP6010720B1 (ja) | ウエハ支持構造体 | |
TW201923952A (zh) | 晶圓載置台及其製法 | |
JP6693808B2 (ja) | 電極内蔵型載置台構造 | |
US10943809B2 (en) | Electrostatic chuck including ceramic dielectric substrate | |
US20180096868A1 (en) | Ceramic heater | |
JPH10189697A (ja) | 静電チャック装置 | |
US11302560B2 (en) | Electrostatic chuck | |
JP6704791B2 (ja) | 加熱装置 | |
KR20110064665A (ko) | 전기장 구배를 이용한 쌍극형 정전척 | |
JP2006054445A (ja) | 吸着装置 | |
JPH10233435A (ja) | 静電チャック | |
JP2017195214A (ja) | 保持装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160405 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20160405 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20160818 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160906 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160916 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6010720 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |