JP2019522889A - 高周波結合による高電力静電チャック設計 - Google Patents
高周波結合による高電力静電チャック設計 Download PDFInfo
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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Abstract
Description
Claims (15)
- ベースプレートと、
トッププレートと、
ワークピースを静電的に把持するためにトッププレートの上面に近接したトッププレート内の第1の電極と、
第1の電極から間隔をあけて配置されたトッププレート内の第2の電極とを含み、第1の電極及び第2の電極は、第1の電極を静電的に帯電させるための電源に結合されている静電チャック。 - 電源は、第1の電極及び第2の電極の両方に直流電力を供給する、請求項1記載のチャック。
- 電源は、第1の電極に交流を更に供給して、ワークピースにバイアス電圧を誘導する、請求項2記載のチャック。
- ベースプレートは、誘電体接着剤でトッププレートに取り付けられている、上記請求項のいずれか1項以上に記載のチャック。
- 第1の電極を第2の電極に電気的に接続するための複数の導電性ペグを含む、上記請求項のいずれか1項以上に記載のチャック。
- 第1及び第2の電極は、導電性メッシュで形成される、請求項5記載のチャック。
- トッププレートはセラミックスであり、電極及びペグは、前記セラミックス内に埋め込まれている、請求項5記載のチャック。
- ベースプレートに結合され、第1及び第2の電極に印加される直流電圧と同じ極性でベースプレートに直流電圧を印加する電源を含む、上記請求項のいずれか1項以上に記載のチャック。
- ベースプレートに印加される直流電圧は、電極に印加される直流電圧の約半分である、上記請求項のいずれか1項以上に記載のチャック。
- 第1及び第2の電極は、第2の電極に結合されたロッドによって電源に結合され、複数の導電性ペグが、電源からの電力を第2の電極から第1の電極に電気的に接続する、上記請求項のいずれか1項以上に記載のチャック。
- 第1及び第2の電極のうちの少なくとも1つは、ロッドによって電源に結合され、ロッドは、電極に結合された高電気抵抗部と、電源に結合された低電気抵抗部とを有する、上記請求項のいずれか1項以上に記載のチャック。
- 第1及び第2の電極のうちの少なくとも1つは、ベースプレートを貫通して延びるロッドによって電源に結合され、ロッドは、ベースプレート内にインダクタを有する、上記請求項のいずれか1項以上に記載のチャック。
- 第1の電極と第2の電極との間の領域内のいずれかのチャネル、穴、又はギャップは、第1電極及び下部電極によって電荷蓄積から遮蔽されている、上記請求項のいずれか1項以上に記載のチャック。
- プラズマ処理チャンバ内でワークピースを処理する方法であって、
静電チャックのトッププレート内の電極を第1の電圧で駆動してワークピースを把持するステップであって、第1の電極がトッププレートの上面近傍にあるステップと、
トッププレート内の第2の電極を第1の電圧で駆動して、トッププレート内の第1の電極と共にファラデーケージを形成するステップとを含む方法。 - プラズマチャンバと、
プラズマチャンバ内にガスイオンを含むプラズマを生成するプラズマ源と、
静電チャックであって、ベースプレートと、トッププレートと、ワークピースを静電的に把持するためにトッププレートの上面に近接したトッププレート内の第1の電極と、第1の電極から間隔をあけて配置されたトッププレート内の第2の電極とを含み、第1の電極及び第2の電極は、第1の電極を静電的に帯電させるための電源に結合されている静電チャックとを含むプラズマ処理チャンバ。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662346746P | 2016-06-07 | 2016-06-07 | |
US62/346,746 | 2016-06-07 | ||
US201662352667P | 2016-06-21 | 2016-06-21 | |
US62/352,667 | 2016-06-21 | ||
US15/383,035 | 2016-12-19 | ||
US15/383,035 US11532497B2 (en) | 2016-06-07 | 2016-12-19 | High power electrostatic chuck design with radio frequency coupling |
PCT/US2017/015183 WO2017213715A1 (en) | 2016-06-07 | 2017-01-26 | High power electrostatic chuck design with radio frequency coupling |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7507842B2 (ja) | 2022-07-29 | 2024-06-28 | セメス株式会社 | 基板支持装置およびそれを含む基板処理装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230096124A (ko) * | 2017-03-28 | 2023-06-29 | 스미토모덴키고교가부시키가이샤 | 웨이퍼 유지체 |
TWI820667B (zh) * | 2018-06-19 | 2023-11-01 | 美商應用材料股份有限公司 | 間隙填充物沉積方法及類金剛石之碳的間隙填充物材料 |
US11367597B2 (en) * | 2018-07-05 | 2022-06-21 | Samsung Electronics Co., Ltd. | Electrostatic chuck and plasma processing apparatus including the same |
JP7153574B2 (ja) * | 2019-01-17 | 2022-10-14 | 東京エレクトロン株式会社 | 上部電極構造、プラズマ処理装置、及び上部電極構造を組み立てる方法 |
TWI701751B (zh) * | 2019-03-12 | 2020-08-11 | 力晶積成電子製造股份有限公司 | 晶圓夾盤裝置、晶圓形變量的量測方法及半導體製造方法 |
US11587773B2 (en) * | 2019-05-24 | 2023-02-21 | Applied Materials, Inc. | Substrate pedestal for improved substrate processing |
CN114245936A (zh) * | 2019-08-08 | 2022-03-25 | 日本碍子株式会社 | 半导体制造装置用构件 |
WO2021041002A1 (en) * | 2019-08-26 | 2021-03-04 | Applied Materials, Inc. | Semiconductor processing apparatus with improved uniformity |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004095665A (ja) * | 2002-08-29 | 2004-03-25 | Tokyo Electron Ltd | 静電吸着装置および処理装置 |
JP2005033181A (ja) * | 2003-05-12 | 2005-02-03 | Tokyo Electron Ltd | 処理装置 |
WO2011108663A1 (ja) * | 2010-03-04 | 2011-09-09 | 東京エレクトロン株式会社 | プラズマエッチング方法、半導体デバイスの製造方法、及びプラズマエッチング装置 |
WO2015111616A1 (ja) * | 2014-01-22 | 2015-07-30 | 株式会社アルバック | プラズマ処理装置、及びウェハ搬送用トレイ |
JP2016009715A (ja) * | 2014-06-23 | 2016-01-18 | 新光電気工業株式会社 | 静電吸着用トレイ、基板固定装置 |
JP2016051877A (ja) * | 2014-09-02 | 2016-04-11 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5671116A (en) | 1995-03-10 | 1997-09-23 | Lam Research Corporation | Multilayered electrostatic chuck and method of manufacture thereof |
US6627198B2 (en) | 1997-03-13 | 2003-09-30 | Corixa Corporation | Fusion proteins of Mycobacterium tuberculosis antigens and their uses |
US5986874A (en) * | 1997-06-03 | 1999-11-16 | Watkins-Johnson Company | Electrostatic support assembly having an integral ion focus ring |
US5880923A (en) | 1997-06-09 | 1999-03-09 | Applied Materials Inc. | Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system |
US6104596A (en) * | 1998-04-21 | 2000-08-15 | Applied Materials, Inc. | Apparatus for retaining a subtrate in a semiconductor wafer processing system and a method of fabricating same |
US6057244A (en) * | 1998-07-31 | 2000-05-02 | Applied Materials, Inc. | Method for improved sputter etch processing |
US6267839B1 (en) * | 1999-01-12 | 2001-07-31 | Applied Materials, Inc. | Electrostatic chuck with improved RF power distribution |
US6367413B1 (en) * | 1999-06-15 | 2002-04-09 | Tokyo Electron Limited | Apparatus for monitoring substrate biasing during plasma processing of a substrate |
US6478924B1 (en) * | 2000-03-07 | 2002-11-12 | Applied Materials, Inc. | Plasma chamber support having dual electrodes |
US6494958B1 (en) * | 2000-06-29 | 2002-12-17 | Applied Materials Inc. | Plasma chamber support with coupled electrode |
KR100378187B1 (ko) * | 2000-11-09 | 2003-03-29 | 삼성전자주식회사 | 정전척을 구비한 웨이퍼 지지대 및 이를 이용한 웨이퍼 디척킹 방법 |
US6483690B1 (en) * | 2001-06-28 | 2002-11-19 | Lam Research Corporation | Ceramic electrostatic chuck assembly and method of making |
US20040040664A1 (en) | 2002-06-03 | 2004-03-04 | Yang Jang Gyoo | Cathode pedestal for a plasma etch reactor |
US20050042881A1 (en) | 2003-05-12 | 2005-02-24 | Tokyo Electron Limited | Processing apparatus |
US7072165B2 (en) * | 2003-08-18 | 2006-07-04 | Axcelis Technologies, Inc. | MEMS based multi-polar electrostatic chuck |
JP5013666B2 (ja) | 2003-10-17 | 2012-08-29 | ソニー株式会社 | 外装フィルムを使用した電池パック及び電池パックの製造方法 |
JP4510745B2 (ja) * | 2005-10-28 | 2010-07-28 | 日本碍子株式会社 | セラミックス基材と電力供給用コネクタの接合構造 |
WO2007066572A1 (ja) * | 2005-12-06 | 2007-06-14 | Creative Technology Corporation | 静電チャック用電極シート及び静電チャック |
US7667944B2 (en) * | 2007-06-29 | 2010-02-23 | Praxair Technology, Inc. | Polyceramic e-chuck |
JP2009239012A (ja) | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマエッチング方法 |
US8607731B2 (en) * | 2008-06-23 | 2013-12-17 | Applied Materials, Inc. | Cathode with inner and outer electrodes at different heights |
US20100018648A1 (en) * | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
CN102473669B (zh) * | 2009-06-30 | 2015-07-15 | Asml控股股份有限公司 | 图像补偿可寻址的静电卡盘系统 |
US8637794B2 (en) * | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
JP5960384B2 (ja) | 2009-10-26 | 2016-08-02 | 新光電気工業株式会社 | 静電チャック用基板及び静電チャック |
US8817449B2 (en) | 2010-03-26 | 2014-08-26 | Ulvac, Inc. | Substrate holding device |
CN103081088B (zh) * | 2010-08-06 | 2016-04-06 | 应用材料公司 | 静电夹盘和使用静电夹盘的方法 |
US9105705B2 (en) * | 2011-03-14 | 2015-08-11 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US8520360B2 (en) * | 2011-07-19 | 2013-08-27 | Lam Research Corporation | Electrostatic chuck with wafer backside plasma assisted dechuck |
US20130107415A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Electrostatic chuck |
US9070536B2 (en) | 2012-04-24 | 2015-06-30 | Applied Materials, Inc. | Plasma reactor electrostatic chuck with cooled process ring and heated workpiece support surface |
KR102205945B1 (ko) | 2012-09-26 | 2021-01-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 폐쇄 루프 제어를 갖는 바닥 및 측부 플라즈마 튜닝 |
WO2014073554A1 (ja) * | 2012-11-06 | 2014-05-15 | 日本碍子株式会社 | サセプタ |
US9101038B2 (en) * | 2013-12-20 | 2015-08-04 | Lam Research Corporation | Electrostatic chuck including declamping electrode and method of declamping |
KR20170026360A (ko) * | 2014-06-17 | 2017-03-08 | 에바텍 아크티엔게젤샤프트 | 무선 주파수 션트를 구비한 정전척 |
CN106537567B (zh) | 2014-07-16 | 2019-08-27 | 株式会社日本有机雷特显示器 | 晶体管、显示装置和电子设备 |
US10002782B2 (en) | 2014-10-17 | 2018-06-19 | Lam Research Corporation | ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough |
US10186437B2 (en) * | 2015-10-05 | 2019-01-22 | Lam Research Corporation | Substrate holder having integrated temperature measurement electrical devices |
US10083853B2 (en) * | 2015-10-19 | 2018-09-25 | Lam Research Corporation | Electrostatic chuck design for cooling-gas light-up prevention |
US10811296B2 (en) * | 2017-09-20 | 2020-10-20 | Applied Materials, Inc. | Substrate support with dual embedded electrodes |
-
2016
- 2016-12-19 US US15/383,035 patent/US11532497B2/en active Active
-
2017
- 2017-01-26 WO PCT/US2017/015183 patent/WO2017213715A1/en active Application Filing
- 2017-01-26 CN CN201780002052.4A patent/CN107710398B/zh active Active
- 2017-01-26 KR KR1020177037830A patent/KR20190005704A/ko not_active Application Discontinuation
- 2017-01-26 JP JP2017558663A patent/JP7101482B2/ja active Active
- 2017-02-02 TW TW106103433A patent/TWI776800B/zh active
-
2022
- 2022-11-11 US US17/985,764 patent/US11948826B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004095665A (ja) * | 2002-08-29 | 2004-03-25 | Tokyo Electron Ltd | 静電吸着装置および処理装置 |
JP2005033181A (ja) * | 2003-05-12 | 2005-02-03 | Tokyo Electron Ltd | 処理装置 |
WO2011108663A1 (ja) * | 2010-03-04 | 2011-09-09 | 東京エレクトロン株式会社 | プラズマエッチング方法、半導体デバイスの製造方法、及びプラズマエッチング装置 |
WO2015111616A1 (ja) * | 2014-01-22 | 2015-07-30 | 株式会社アルバック | プラズマ処理装置、及びウェハ搬送用トレイ |
JP2016009715A (ja) * | 2014-06-23 | 2016-01-18 | 新光電気工業株式会社 | 静電吸着用トレイ、基板固定装置 |
JP2016051877A (ja) * | 2014-09-02 | 2016-04-11 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7507842B2 (ja) | 2022-07-29 | 2024-06-28 | セメス株式会社 | 基板支持装置およびそれを含む基板処理装置 |
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TW201807770A (zh) | 2018-03-01 |
CN107710398A (zh) | 2018-02-16 |
WO2017213715A1 (en) | 2017-12-14 |
US11532497B2 (en) | 2022-12-20 |
US20230072594A1 (en) | 2023-03-09 |
CN107710398B (zh) | 2023-06-27 |
JP7101482B2 (ja) | 2022-07-15 |
KR20190005704A (ko) | 2019-01-16 |
US20170352567A1 (en) | 2017-12-07 |
TWI776800B (zh) | 2022-09-11 |
US11948826B2 (en) | 2024-04-02 |
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