WO2015111616A1 - プラズマ処理装置、及びウェハ搬送用トレイ - Google Patents
プラズマ処理装置、及びウェハ搬送用トレイ Download PDFInfo
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- WO2015111616A1 WO2015111616A1 PCT/JP2015/051523 JP2015051523W WO2015111616A1 WO 2015111616 A1 WO2015111616 A1 WO 2015111616A1 JP 2015051523 W JP2015051523 W JP 2015051523W WO 2015111616 A1 WO2015111616 A1 WO 2015111616A1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67333—Trays for chips
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/6773—Conveying cassettes, containers or carriers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Definitions
- the present invention relates to a plasma processing apparatus and a wafer transfer tray, and more particularly to fixing a wafer transfer tray.
- a wafer transfer tray is generally used when a large number of wafers are processed at once by plasma processing. For example, a large number of wafers are placed on one surface of the wafer transfer tray. Such a wafer transfer tray is placed on a support of a plasma processing apparatus. The support acts as one electrode during plasma processing.
- Patent Document 1 discloses a plasma processing apparatus that fixes a wafer to a wafer transfer tray by electrostatic attraction.
- the plasma processing apparatus as described above has a configuration in which a wafer transfer tray and a support body supporting the wafer transfer tray are mechanically adhered by a mechanical clamp. For this reason, there is a problem that the operation when fixing the wafer transfer tray to the support is complicated. In particular, because of the structure, the mechanical clamp is brought into contact with and fixed to the peripheral portion of the wafer transfer tray, so that the adhesion between the wafer transfer tray and the support is reduced near the center of the wafer transfer tray. End up.
- the present invention has been made in view of the above problems, and a plasma processing apparatus capable of easily and uniformly bringing a wafer carrying tray and a support supporting the wafer into close contact with each other over the entire support surface, and a wafer
- the purpose is to provide a transport tray.
- the plasma processing apparatus has a first surface and a second surface opposite to the first surface, and carries the wafer on the first surface.
- a tray for cooling, a cooling unit for cooling the tray for wafer transfer, a conductive support for supporting the second surface of the tray for wafer transfer, and the first surface of the tray for wafer transfer A double-sided electrostatic adsorption unit that electrostatically adsorbs a wafer and electrostatically adsorbs the support on the second surface of the wafer transfer tray.
- the wafer transfer tray includes a base formed of an insulator, a first conductive layer for electrostatic attraction embedded in a position close to the first surface of the base, and the base of the base Embedded in a position close to the second surface, and a second conductive layer for electrostatic adsorption that conducts with the first conductive layer, and a DC voltage is applied to the first conductive layer and the second conductive layer.
- a DC voltage application unit to be applied may be connected, and the support may be connected to a ground unit that uses a potential of the support with respect to a DC voltage as a ground potential.
- the wafer transfer tray is embedded at a position close to the first surface of the base body formed of a high resistance body having a resistance value in a range of 10 8 ⁇ to 10 11 ⁇ .
- a first voltage layer for electrostatic adsorption, and a DC voltage application unit for applying a DC voltage is connected to the first conductive layer, and the support is configured to A grounding portion that is a support ground potential may be connected.
- the wafer transfer tray includes a base formed of an insulator, a first conductive layer for electrostatic adsorption embedded at a position close to the first surface of the base, and the base A second conductor for electrostatic attraction that is disposed on a support surface opposite to the wafer transfer tray.
- the conductor is disposed so as to be exposed on the second surface.
- the first conductive layer and the second conductive layer may be connected to a DC voltage application unit that applies a DC voltage.
- the wafer transfer tray includes a base formed of metal, a first insulating layer disposed on the first surface of the base and having a first conductor embedded therein for electrostatic attraction.
- a second insulating layer disposed on the second surface of the base body and embedded with a second conductive layer for electrostatic adsorption that is electrically connected to the first conductive layer, and the first conductive layer and the second conductive layer
- a DC voltage application unit that applies a DC voltage may be connected to the second conductive layer, and a ground unit that uses a potential of the support relative to the DC voltage as a ground potential may be connected to the support.
- the wafer transfer tray includes a base formed of metal, and a first insulating layer disposed on the first surface of the base and embedded with a first conductive layer for electrostatic adsorption.
- the support has a second insulating layer disposed on a support surface facing the wafer transfer tray and embedded with a second conductive layer for electrostatic attraction, the first conductive layer and the first conductive layer
- a DC voltage application unit that applies a DC voltage may be connected to the two conductive layers.
- the wafer transfer tray includes a base formed of a metal constituting a conductor for electrostatic attraction, and an insulating layer covering an outer peripheral surface of the base.
- a DC voltage application unit that applies a DC voltage may be connected, and a grounding unit that uses a potential of the support relative to the DC voltage as a ground potential may be connected to the support.
- the wafer transfer tray has a base formed of a metal constituting a conductor for electrostatic attraction, and an insulating layer covering an outer peripheral surface of the base, and the support is And an insulating layer disposed on a support surface facing the wafer transfer tray and embedded with a second conductive layer for electrostatic attraction, and a DC voltage application unit for applying a DC voltage is connected to the substrate. It may be.
- the grounding unit may include a low-pass filter that cuts an AC voltage in a predetermined frequency range applied to the support.
- the wafer transfer tray of the plasma processing apparatus has a first surface and a second surface opposite to the first surface, and holds the wafer on the first surface.
- a conductor for electrostatic attraction that is connected to a DC voltage application unit that applies a DC voltage and is embedded in the substrate.
- the both surfaces of the first and second surfaces of the wafer transfer tray are formed by the double-sided electrostatic adsorption unit of the plasma processing apparatus.
- the wafer and the support are electrostatically attracted to each other.
- plasma is generated between the support forming the lower electrode and the upper electrode, and the wafer transfer tray can be efficiently and uniformly cooled when plasma processing is performed on the wafer. Therefore, uniform and accurate plasma processing can be performed on the wafer.
- the wafer transfer tray and the support are brought into close contact with each other. Therefore, the wafer transfer tray can be efficiently cooled by the cooling gas supplied from the gas supply unit. Further, due to the close contact between the wafer transfer tray and the support, loss due to dissipation of the cooling gas can be reduced.
- the plasma processing apparatus electrically adsorbs the wafer transfer tray and the support. Therefore, there are fewer mechanical moving parts. This makes it possible to easily fix the wafer transfer tray and the support with a simple configuration.
- FIG. 1 is a cross-sectional view showing the entire plasma processing apparatus according to the first embodiment of the present invention.
- the plasma processing apparatus 10 includes a plasma processing tank (chamber) 11, an upper electrode 18 disposed near the upper surface inside the plasma processing tank 11, and a lower electrode disposed near the bottom surface inside the plasma processing tank 11. And a support portion 15 having a wafer transfer tray 13 placed on the support 12.
- the wafer transfer tray 13 is a substantially disc-shaped substrate 21 and an electrostatic chuck embedded in a position closer to one surface (first surface) 21a than the other surface (second surface) 21b of the substrate 21.
- a first conductive layer 22 Further, a concave portion 23 for inserting a wafer W as an object to be processed is formed on one surface 21a of the base 21.
- the base 21 is composed of a high-resistance body having a resistance value in the range of 10 8 ⁇ to 10 11 ⁇ .
- a high resistance body may be a ceramic plate whose resistance value is controlled, for example.
- the first conductive layer 22 is made of a metal such as aluminum, tungsten, titanium, or an alloy containing these.
- the first conductive layer 22 may be formed so as to extend in parallel to the one surface 21a of the base 21 at a position several hundred micrometers to several millimeters deep from the one surface 21a of the base 21.
- Such a wafer transfer tray 13 can be obtained, for example, by spraying a metal constituting the first conductive layer 22 on a ceramic plate.
- FIG. 2 is a plan view of the wafer transfer tray 13 viewed from above.
- the wafer transfer tray 13 is formed with a plurality of recesses 23, 23,... So that a plurality of wafers W having a diameter of about 2 to 4 inches can be mounted, for example.
- four recesses 23 are formed so that a plurality of four wafers W can be placed.
- the support unit 15 is connected to a gas supply unit 25 that supplies a cooling gas that is a cooling unit for cooling the wafer transfer tray 13.
- the cooling gas supplied from the gas supply unit 25 flows, for example, along a gas flow path (not shown) formed on one surface (first surface) 13 a side of the wafer transfer tray 13, and the wafer transfer tray 13. Cool down. If a structure is formed in which a flow path is formed in the substrate 21 and a coolant is passed through the flow path to cool the wafer transfer tray 13, the cooling efficiency of the wafer can be further improved.
- the cooling gas supplied from the gas supply unit 25 is required to be a gas that does not cause a chemical reaction with the plasma atmosphere P and the laminated film of the wafer W in the plasma processing tank 11, and is an inert gas. Is desirable. Furthermore, since this inert gas is used for controlling the temperature rise, it is desirable that the inert gas be a helium gas having a low boiling point and a function as a refrigerant.
- a DC voltage application unit 26 for applying a DC voltage is connected to the first conductive layer 22.
- the DC voltage application unit 26 includes, for example, a DC power supply device, connection wiring, and the like.
- the DC voltage applied to the first conductive layer 22 may be, for example, about 1000V to 5000V. By applying such a DC voltage, the first conductive layer 22 is positively or negatively charged.
- the support 12 has a flat shape at least on the support surface 12a supported in contact with the other surface (second surface) 13b of the wafer transfer tray 13, and the wafer transfer tray 13 is supported by the support surface 12a. To do.
- the support 12 is entirely made of a conductor such as metal, for example, aluminum, titanium, iron, or an alloy containing these.
- a high frequency voltage application unit 27 for applying a high frequency voltage is connected to the support 12.
- the high frequency voltage application unit 27 includes, for example, a high frequency power supply device, connection wiring, and the like.
- the support 12 functions as a lower electrode that generates plasma P between the support 12 and the upper electrode 18.
- the support 12 is connected to a grounding portion 28 that makes the support 12 ground potential with respect to a DC voltage.
- the grounding unit 28 is constituted by, for example, a low-pass filter, a ground wiring, or the like. Among these, the low-pass filter cuts the high-frequency voltage applied by the high-frequency voltage application unit 27 and connects the support 12 to the ground wiring only for the DC voltage. Thus, the support 12 has a ground potential with respect to the DC voltage, and the high frequency voltage applied by the high frequency voltage application unit 27 flows to the ground unit 28 and is not lost.
- the double-sided electrostatic adsorption unit is configured by the base body 21, the first conductive layer 22, the support 12, the DC voltage application unit 26, and the ground unit 28.
- the first conductive layer 22 of the wafer transfer tray 13 is positively or negatively charged by applying a DC voltage to the first conductive layer 22 by the DC voltage application unit 26.
- the wafer W is transferred to the wafer W by the Coulomb force (electrostatic adsorption force) generated by the electric charge induced between the wafer W placed in the recess 23 of the wafer transfer tray 13 and the first conductive layer 22.
- the tray 13 is electrostatically adsorbed.
- the support 12 is set to the ground potential with respect to the DC voltage by the grounding unit 28.
- the substrate 21 forming the wafer transfer tray 13 is composed of a high resistance body having a resistance value in the range of 10 8 ⁇ or more and 10 11 ⁇ or less.
- the wafer carrying tray 13 is electrostatically attracted to the support 12 by the Johnson-Labeck force (electrostatic attracting force) generated by the charge movement in the substrate 21.
- the wafer W and the support 12 are electrostatically adsorbed on the both surfaces of the one surface 13a and the other surface 13b of the wafer transfer tray 13 by the double-sided electrostatic adsorption unit of the plasma processing apparatus 10, respectively. That is, the wafer W is electrostatically attracted to one surface 13 a of the wafer transport tray 13, and the support 12 is electrostatically attracted to the other surface 13 b of the wafer transport tray 13.
- the wafer transfer tray can be efficiently and uniformly cooled.
- the wafer W can be subjected to uniform and accurate plasma processing.
- the wafer transfer tray 13 and the support 12 are in close contact with each other. Therefore, the wafer transfer tray 13 can be efficiently cooled by the cooling gas supplied from the gas supply unit 25. Further, due to the close contact between the wafer transfer tray 13 and the support 12, loss due to dissipation of the cooling gas can also be reduced.
- the plasma processing apparatus 10 of the present invention electrically adsorbs the wafer transfer tray and the support. Therefore, there are fewer mechanical moving parts. This makes it possible to easily fix the wafer transfer tray and the support with a simple configuration.
- an example of the monopolar system is shown as the first conductive layer 22, but a bipolar system in which a plurality of conductive layers arranged have different polarities may be used.
- FIG. 3 is a cross-sectional view showing the vicinity of the support portion of the plasma processing apparatus according to the second embodiment of the present invention.
- the wafer transfer tray 32 in the support portion 31 of the plasma processing apparatus 30 according to the second embodiment has a base 33 formed of an insulator and a surface (first surface) 33 a that is more than the other surface 33 b of the base 33.
- the base 33 is made of, for example, a ceramic plate.
- the first conductive layer 34 and the second conductive layer 35 are electrically connected by a conductor extending in the thickness direction of the wafer transfer tray 32.
- the first conductive layer 34 and the second conductive layer 35 are made of metal, for example, aluminum, tungsten, titanium, or an alloy containing these.
- the first conductive layer 34 may be formed so as to extend in parallel with the one surface 33a of the base 33, for example, at a position several hundred micrometers deep from the one surface 33a of the base 33.
- the second conductive layer 35 may be formed so as to extend in parallel with the other surface 33b of the base body 33 at a position several hundred micrometers deep from the other surface 33b of the base body 33, for example.
- Such a wafer transfer tray 32 can be obtained, for example, by spraying a metal constituting the first conductive layer 33 and the second conductive layer 34 on a ceramic plate.
- the support unit 31 is connected to a gas supply unit 25 that supplies a cooling gas that is a cooling unit for cooling the wafer transfer tray 32.
- the cooling gas supplied from the gas supply unit 25 flows, for example, along a gas flow path (not shown) formed on one surface (first surface) 32 a side of the wafer transfer tray 32, and the wafer transfer tray 32. Cool down.
- a DC voltage application unit 36 for applying a DC voltage is connected to the first conductive layer 34 and the second conductive layer 35.
- the DC voltage application unit 36 includes, for example, a DC power supply device, connection wiring, and the like. By applying such a DC voltage, the first conductive layer 34 and the second conductive layer 35 are positively or negatively charged.
- the support 37 has a flat shape at least on a support surface 37a that is in contact with and supported by the other surface (second surface) 32b of the wafer transfer tray 32, and the wafer transfer tray 32 is supported by the support surface 37a. To do.
- the support 37 is entirely made of a conductor such as metal, for example, aluminum, titanium, iron, or an alloy containing these.
- a high frequency voltage application unit 38 for applying a high frequency voltage is connected to the support 37.
- the high-frequency voltage application unit 38 includes, for example, a high-frequency power supply device, connection wiring, and the like.
- the support 37 functions as a lower electrode that generates plasma P between the upper electrode 18 (see FIG. 1).
- the support 37 is connected to a ground portion 39 that makes the support 37 a ground potential with respect to a DC voltage.
- the ground unit 39 is composed of, for example, a low-pass filter, a ground wiring, and the like. Among these, the low-pass filter cuts the high-frequency voltage applied by the high-frequency voltage application unit 38 and connects the support 37 to the ground wiring only for the DC voltage. Accordingly, the support 37 has a ground potential with respect to the DC voltage, and the high frequency voltage applied by the high frequency voltage application unit 38 flows to the ground unit 39 and is not lost.
- the double-sided electrostatic adsorption unit is configured by the base 33, the first conductive layer 34, the second conductive layer 35, the support 37, the DC voltage application unit 36, and the ground unit 39.
- the first conductive layer 34 of the wafer transfer tray 32 is charged positively or negatively by applying a DC voltage to the first conductive layer 34 by the DC voltage application unit 36. .
- the wafer W is placed on the wafer transfer tray 32 by the Coulomb force (electrostatic adsorption force) generated by the electric charge induced between the wafer W placed on the wafer transfer tray 32 and the first conductive layer 34. It is electrostatically attracted.
- the support 37 is set to the ground potential with respect to the DC voltage by the grounding portion 39. Then, when the DC voltage is applied to the second conductive layer 35 by the DC voltage application unit 36, the second conductive layer 35 of the wafer transfer tray 32 is positively or negatively charged. As a result, the support 37 is electrostatically attracted to the wafer transfer tray 32 by the Coulomb force (electrostatic attracting force) generated by the charge induced between the support surface 37 a of the support 37 and the second conductive layer 35.
- the Coulomb force electrostatic attracting force
- the wafer W and the support 37 are electrostatically adsorbed by the double-sided electrostatic adsorption unit of the plasma processing apparatus 30 on both the one side 32a and the other side 32b of the wafer transfer tray 32, respectively. That is, the wafer W is electrostatically attracted to one surface 32 a of the wafer transport tray 32, and the support 37 is electrostatically attracted to the other surface 32 b of the wafer transport tray 32.
- the wafer transfer tray is efficiently and uniformly formed. Cooling can be performed, and uniform and accurate plasma processing can be performed on the wafer W.
- the wafer transfer tray 32 and the support 37 are brought into close contact with each other. Therefore, the wafer transfer tray 32 can be efficiently cooled by the cooling gas supplied from the gas supply unit 25. Further, due to the close contact between the wafer transfer tray 32 and the support 37, loss due to dissipation of the cooling gas can be reduced.
- the plasma processing apparatus 30 is electrically connected to the wafer transfer tray and the support.
- the mechanically movable parts are reduced. This makes it possible to easily fix the wafer transfer tray and the support with a simple configuration.
- FIG. 4 is a cross-sectional view showing the vicinity of the support portion of the plasma processing apparatus according to the third embodiment of the present invention.
- the wafer transfer tray 42 in the support portion 41 of the plasma processing apparatus 40 according to the third embodiment has a base 43 formed of an insulator and a surface (first surface) 43a that is more than the other surface 43b of the base 43.
- the base 43 is made of, for example, a ceramic plate.
- the first conductive layer 44 and the conductor 45 are made of metal, for example, aluminum, tungsten, titanium, or an alloy containing these.
- the first conductive layer 44 may be formed to extend in parallel with the one surface 43a of the base body 43 at a position several millimeters deep from the one surface 43a of the base body 43, for example.
- Such a wafer transfer tray 42 can be obtained, for example, by spraying a metal constituting the first conductive layer 43 on a ceramic plate.
- the support unit 41 is connected to a gas supply unit 25 that supplies a cooling gas that is a cooling unit for cooling the wafer transfer tray 42.
- the cooling gas supplied from the gas supply unit 25 flows, for example, along a gas flow path (not shown) formed on one surface (first surface) 42 a side of the wafer transfer tray 42, and the wafer transfer tray 42. Cool down.
- the first conductive layer 44 is connected to a DC voltage application unit 46a for applying a DC voltage.
- the DC voltage application unit 46a is constituted by, for example, a DC power supply device, connection wiring, and the like. By applying such a DC voltage, the first conductive layer 44 is charged positively or negatively.
- Second conductive layers 49a and 49b for electrostatic attraction are embedded in the support surface 47a of the support 47 that contacts the other surface (second surface) 42b of the wafer transfer tray 42 and supports the wafer transfer tray 42.
- Insulating layer 47b is formed.
- the second conductive layers 49a and 49b are entirely made of a conductor such as metal, for example, aluminum, titanium, iron, or an alloy containing these.
- the insulating layer 47b is made of ceramics, for example.
- a DC voltage application unit 46b and a DC voltage application unit 46c for applying a DC voltage are connected to the second conductive layer 49a and the second conductive layer 49b, respectively.
- the DC voltage application units 46b and 46c are composed of, for example, a DC power supply device, connection wiring, and the like.
- the second conductive layers 49a and 49b are charged with polarities opposite to each other, and form a bipolar electrostatic chuck.
- a high frequency voltage application unit 48 for applying a high frequency voltage is connected to the support 47.
- the high frequency voltage application unit 48 includes, for example, a high frequency power supply device, connection wiring, and the like.
- the support 47 functions as a lower electrode that generates plasma P between the upper electrode 18 (see FIG. 1).
- the double-sided electrostatic adsorption portion is constituted by the base body 43, the first conductive layer 44, the conductor 45, the second conductive layers 49a, 49b, and the DC voltage application portions 46a, 46b, 46c. Composed.
- the plasma processing apparatus 40 when the DC voltage is applied to the first conductive layer 44 by the DC voltage application unit 46a, the first conductive layer 44 of the wafer transfer tray 42 is charged positively or negatively. .
- the wafer W is placed on the wafer transfer tray 42 by the Coulomb force (electrostatic adsorption force) generated by the charge induced between the wafer W placed on the wafer transfer tray 42 and the first conductive layer 44. It is electrostatically attracted.
- DC voltages having opposite polarities are applied from the DC voltage application units 46b and 46c to the second conductive layers 49a and 49b embedded in the insulating layer 47b formed on the support 47.
- the support 47 is caused by the Coulomb force (electrostatic adsorption force) generated by the electric charge induced between the conductor 45 formed on the other surface 42b of the wafer transfer tray 42 and the second conductive layers 49a and 49b. Is electrostatically attracted to the wafer transfer tray 42.
- the wafer W and the support 47 are electrostatically adsorbed on the both surfaces of the one surface 42a and the other surface 42b of the wafer transfer tray 42 by the double-sided electrostatic adsorption unit of the plasma processing apparatus 40, respectively. That is, the wafer W is electrostatically attracted to one surface 42 a of the wafer transport tray 42, and the support 47 is electrostatically attracted to the other surface 42 b of the wafer transport tray 42.
- the wafer transfer tray is efficiently and uniformly formed. Cooling can be performed, and uniform and accurate plasma processing can be performed on the wafer W.
- the wafer transfer tray 42 and the support 47 are brought into close contact with each other. Therefore, the wafer transfer tray 42 can be efficiently cooled by the cooling gas supplied from the gas supply unit 25. Further, due to the close contact between the wafer transfer tray 42 and the support 47, loss due to dissipation of the cooling gas can also be reduced.
- the plasma processing apparatus 40 is electrically connected to the wafer transfer tray and the support. And the number of mechanically movable parts is reduced. This makes it possible to easily fix the wafer transfer tray and the support with a simple configuration.
- FIG. 5 is a cross-sectional view showing the vicinity of the support portion of the plasma processing apparatus according to the fourth embodiment of the present invention.
- the wafer transfer tray 52 in the support portion 51 of the plasma processing apparatus 50 of the fourth embodiment is formed on a base 53 formed of metal and one surface (first surface) 53a of the base 53, and the first conductive layer. And a second insulating layer 55b formed on the other surface (second surface) 53b of the base 53 and embedded with the second conductive layer 54b.
- the base 53 is made of metal, for example, aluminum, titanium, iron, or an alloy containing these.
- the first conductive layer 54 a and the second conductive layer 54 b are electrically connected by a conductor extending in the thickness direction of the wafer transfer tray 52.
- the conductor that conducts the first conductive layer 54 a and the second conductive layer 54 b is also covered with an insulator and insulated from the base 53.
- the first conductive layer 54a and the second conductive layer 54b are made of metal, for example, aluminum, tungsten, titanium, or an alloy containing these.
- the first insulating layer 55a and the second insulating layer 55b are made of ceramics, for example.
- the support unit 51 is connected to a gas supply unit 25 that supplies a cooling gas that is a cooling unit for cooling the wafer transfer tray 52.
- the cooling gas supplied from the gas supply unit 25 flows, for example, along a gas flow path (not shown) formed on one surface (first surface) 52 a side of the wafer transfer tray 52, and the wafer transfer tray 52. Cool down.
- a DC voltage application unit 56 for applying a DC voltage is connected to the first conductive layer 54a and the second conductive layer 54b.
- the DC voltage application unit 56 includes, for example, a DC power supply device, connection wiring, and the like. By applying such a DC voltage, the first conductive layer 54a and the second conductive layer 54b are positively or negatively charged.
- the support 57 has a flat shape on a support surface 57a that supports the wafer transfer tray 52 in contact with at least the other surface (second surface) 52b of the wafer transfer tray 52.
- the transfer tray 52 is supported.
- the support 57 is entirely made of a conductor such as metal, for example, aluminum, titanium, iron, or an alloy containing these.
- a high frequency voltage application unit 58 for applying a high frequency voltage is connected to the support 57.
- the high frequency voltage application unit 58 includes, for example, a high frequency power supply device, connection wiring, and the like.
- the support 57 functions as a lower electrode that generates plasma P between the upper electrode 18 (see FIG. 1).
- the support 57 is connected to a grounding portion 59 that makes the support 57 a ground potential with respect to a DC voltage.
- the grounding unit 59 is composed of, for example, a low-pass filter, a ground wiring, and the like. Among these, the low-pass filter cuts the high-frequency voltage applied by the high-frequency voltage application unit 58 and connects the support body 57 to the ground wiring only for the DC voltage. As a result, the support 57 has a ground potential with respect to the DC voltage, and the high frequency voltage applied by the high frequency voltage application unit 58 flows to the ground unit 59 and is not lost.
- the first insulating layer 55a in which the first conductive layer 54a is embedded, the second insulating layer 55b in which the second conductive layer 54b is embedded, the support 57, the DC voltage application unit 56, and The grounding part 59 constitutes a double-sided electrostatic adsorption part.
- the plasma processing apparatus 50 when the DC voltage is applied to the first conductive layer 54a by the DC voltage application unit 56, the first conductive layer 54a of the wafer transfer tray 52 is charged positively or negatively. .
- the wafer W is placed on the wafer transfer tray 52 by the Coulomb force (electrostatic adsorption force) generated by the electric charge induced between the wafer W placed on the wafer transfer tray 52 and the first conductive layer 54a. It is electrostatically attracted.
- the support body 57 is set to the ground potential with respect to the DC voltage by the ground portion 59. Then, when a DC voltage is applied to the second conductive layer 54b by the DC voltage application unit 56, the second conductive layer 54b of the wafer transfer tray 52 is charged positively or negatively. As a result, the support 57 is electrostatically attracted to the wafer transfer tray 52 by the Coulomb force (electrostatic adsorption force) generated by the charge induced between the support surface 57a of the support 57 and the second conductive layer 54b.
- the Coulomb force electrostatic adsorption force
- the wafer W and the support 57 are electrostatically adsorbed on both the one surface 52a and the other surface 52b of the wafer transfer tray 52 by the double-sided electrostatic adsorption unit of the plasma processing apparatus 50, respectively. That is, the wafer W is electrostatically attracted to one surface 52 a of the wafer transport tray 52, and the support 57 is electrostatically attracted to the other surface 52 b of the wafer transport tray 52.
- the wafer transfer tray is made uniform efficiently. Cooling can be performed, and uniform and accurate plasma processing can be performed on the wafer W.
- the wafer transfer tray 52 and the support 57 are brought into close contact with each other, so that the wafer transfer tray is cooled by the cooling gas supplied from the gas supply unit 25. 52 can be efficiently cooled. Further, due to the close contact between the wafer transfer tray 52 and the support 57, loss due to dissipation of the cooling gas can be reduced.
- the plasma processing apparatus 50 is electrically connected to the wafer transfer tray and the support.
- the mechanically movable parts are reduced. This makes it possible to easily fix the wafer transfer tray and the support with a simple configuration.
- FIG. 6 is a cross-sectional view showing the vicinity of the support portion of the plasma processing apparatus according to the fifth embodiment of the present invention.
- the wafer transfer tray 62 in the support portion 61 of the plasma processing apparatus 60 according to the fifth embodiment is formed on a base 63 formed of metal and one surface (first surface) 63a of the base 63, and the first conductive A first insulating layer 69a in which the layer 64 is embedded.
- the base 63 is made of metal, for example, aluminum, titanium, iron, or an alloy containing these.
- the first conductive layer 64 is made of metal, for example, aluminum, tungsten, titanium, or an alloy containing these.
- the first insulating layer 69a is made of ceramics, for example.
- the support unit 61 is connected to a gas supply unit 25 that supplies a cooling gas that is a cooling unit for cooling the wafer transfer tray 62.
- the cooling gas supplied from the gas supply unit 25 flows, for example, along a gas flow path (not shown) formed on one surface (first surface) 62 a side of the wafer transfer tray 62, and the wafer transfer tray 62. Cool down.
- the first conductive layer 64 is connected to a DC voltage application unit 66a for applying a DC voltage.
- the DC voltage application unit 66a includes, for example, a DC power supply device, connection wiring, and the like. By applying such a DC voltage, the first conductive layer 64 is charged positively or negatively.
- Second conductive layers 65a and 65b for electrostatic attraction are embedded in the support surface 67a of the support 67 that contacts the other surface (second surface) 62b of the wafer transfer tray 62 and supports the wafer transfer tray 62.
- the second insulating layer 69b is formed.
- the second conductive layers 65a and 65b are entirely made of a conductor such as metal, for example, aluminum, tungsten, titanium, or an alloy containing these.
- the second insulating layer 69b is made of ceramics, for example.
- a DC voltage application unit 66b and a DC voltage application unit 66c for applying a DC voltage are connected to the second conductive layer 65a and the second conductive layer 65b, respectively.
- the DC voltage application units 66b and 66c are composed of, for example, a DC power supply device, connection wiring, and the like.
- the second conductive layers 65a and 65b are charged with polarities opposite to each other to form a bipolar electrostatic chuck.
- a high frequency voltage application unit 68 for applying a high frequency voltage is connected to the support 67.
- the high-frequency voltage application unit 68 includes, for example, a high-frequency power supply device, connection wiring, and the like.
- the support 67 functions as a lower electrode that generates plasma P with the upper electrode 18 (see FIG. 1).
- 66a, 66b, and 66c constitute a double-sided electrostatic chuck.
- the plasma processing apparatus 60 when the DC voltage is applied to the first conductive layer 64 by the DC voltage application unit 66a, the first conductive layer 64 of the wafer transfer tray 62 is charged positively or negatively. .
- the wafer W is placed on the wafer transport tray 62 by the Coulomb force (electrostatic adsorption force) generated by the electric charge induced between the wafer W placed on the wafer transport tray 62 and the first conductive layer 64. It is electrostatically attracted.
- the wafer W and the support 67 are electrostatically adsorbed on both surfaces of the one surface 62a and the other surface 62b of the wafer transfer tray 62 by the double-side electrostatic adsorption unit of the plasma processing apparatus 60, respectively. That is, the wafer W is electrostatically attracted to one surface 62 a of the wafer transport tray 62, and the support 67 is electrostatically attracted to the other surface 62 b of the wafer transport tray 62.
- the wafer transfer tray is efficiently and uniformly formed. Since cooling is possible, uniform and accurate plasma processing can be performed on the wafer W.
- the wafer transfer tray 62 and the support 67 are brought into close contact with each other. Therefore, the wafer transfer tray 62 can be efficiently cooled by the cooling gas supplied from the gas supply unit 25. Further, due to the close contact between the wafer transfer tray 62 and the support 67, loss due to dissipation of the cooling gas can be reduced.
- the plasma processing apparatus 60 electrically attaches the support to the wafer transfer tray. Because it is adsorbed, there are fewer mechanical moving parts. This makes it possible to easily fix the wafer transfer tray and the support with a simple configuration.
- FIG. 7 is a cross-sectional view showing the vicinity of the support portion of the plasma processing apparatus according to the sixth embodiment of the present invention.
- the wafer transfer tray 72 in the support portion 71 of the plasma processing apparatus 70 of the sixth embodiment includes a base 73 formed of metal and an insulating layer 74 that covers the outer peripheral surface of the base 73.
- the base 73 is made of metal, for example, aluminum, titanium, iron, or an alloy containing these.
- the insulating layer 74 is made of ceramics, for example.
- a gas supply unit 25 that supplies a cooling gas which is a cooling unit for cooling the wafer transfer tray 72, is connected to the support unit 71.
- the cooling gas supplied from the gas supply unit 25 flows, for example, along a gas flow path (not shown) formed on the one surface (first surface) 72 a side of the wafer transfer tray 72, and the wafer transfer tray 72. Cool down.
- a DC voltage applying unit 76 for applying a DC voltage is connected to the base 73 formed of metal.
- the DC voltage application unit 76 includes, for example, a DC power supply device, connection wiring, and the like. By applying such a DC voltage, the base 73 is positively or negatively charged.
- the support 77 has a flat shape on a support surface 77a that supports the wafer transfer tray 72 in contact with at least the other surface (second surface) 72b of the wafer transfer tray 72.
- the transfer tray 72 is supported.
- the support 77 is entirely made of a conductor such as metal, for example, aluminum, titanium, iron, copper, or an alloy containing these.
- a high frequency voltage application unit 78 for applying a high frequency voltage is connected to the support 77.
- the high frequency voltage application unit 78 includes, for example, a high frequency power supply device and connection wiring.
- the support body 77 functions as a lower electrode for generating plasma P between the upper electrode 18 (see FIG. 1).
- the support 77 is connected to a grounding portion 79 having the support 77 as a ground potential with respect to a DC voltage.
- the grounding unit 79 is composed of, for example, a low-pass filter, a ground wiring, and the like. Among these, the low-pass filter cuts the high-frequency voltage applied by the high-frequency voltage application unit 78 and connects the support 77 to the ground wiring only for the DC voltage.
- the support 77 has a ground potential with respect to the DC voltage, and the high frequency voltage applied by the high frequency voltage application unit 78 flows to the ground unit 79 and is not lost.
- the double-sided electrostatic adsorption unit is configured by the base 73 formed of metal, the support 77, the DC voltage application unit 76, and the grounding unit 79.
- the substrate 73 of the wafer transfer tray 52 is positively or negatively charged by applying a DC voltage to the substrate 73 formed of metal by the DC voltage application unit 76.
- the wafer W is electrostatically attracted to the wafer transport tray 72 by a Coulomb force (electrostatic attracting force) generated by the charge induced between the wafer W placed on the wafer transport tray 72 and the substrate 73. Is done.
- the support body 57 is set to the ground potential with respect to the DC voltage by the ground portion 59. Then, when the DC voltage is applied to the substrate 73 by the DC voltage application unit 56, the substrate 73 of the wafer transfer tray 72 is charged positively or negatively. As a result, the support 77 is electrostatically attracted to the wafer transfer tray 72 by the Coulomb force (electrostatic attracting force) generated by the electric charge induced between the support surface 77 a of the support 77 and the base 73.
- the Coulomb force electrostatic attracting force
- the wafer W and the support 77 are electrostatically adsorbed on both the one surface 72a and the other surface 72b of the wafer transfer tray 72 by the double-sided electrostatic adsorption unit of the plasma processing apparatus 70, respectively. That is, the wafer W is electrostatically attracted to one surface 72 a of the wafer transport tray 72, and the support 77 is electrostatically attracted to the other surface 72 b of the wafer transport tray 72.
- plasma P is generated between the support 77 constituting the lower electrode and the upper electrode 18 (see FIG. 1), and when the wafer W is subjected to plasma processing, the wafer transfer tray is efficiently and uniformly cooled. Therefore, uniform and accurate plasma processing can be performed on the wafer W.
- the wafer transfer tray 72 and the support 77 are brought into close contact with each other. Therefore, the wafer transfer tray 72 can be efficiently cooled by the cooling gas supplied from the gas supply unit 25. Further, due to the close contact between the wafer transfer tray 72 and the support 77, loss due to dissipation of the cooling gas can be reduced.
- the plasma processing apparatus 70 of the present invention electrically adsorbs the wafer transfer tray and the support. Therefore, there are fewer mechanical moving parts. This makes it possible to easily fix the wafer transfer tray and the support with a simple configuration.
- FIG. 8 is a cross-sectional view showing the vicinity of the support portion of the plasma processing apparatus according to the seventh embodiment of the present invention.
- the wafer transfer tray 82 in the support portion 81 of the plasma processing apparatus 80 according to the seventh embodiment includes a base 83 formed of metal and a first insulating layer 84 a that covers the outer peripheral surface of the base 83.
- the base 83 is made of metal, for example, aluminum, titanium, iron, or an alloy containing these.
- the first insulating layer 84a is made of ceramics, for example.
- the support unit 81 is connected to a gas supply unit 25 that supplies a cooling gas, which is a cooling unit for cooling the wafer transfer tray 82.
- the cooling gas supplied from the gas supply unit 25 flows, for example, along a gas flow path (not shown) formed on the one surface (first surface) 82 a side of the wafer transfer tray 82, and the wafer transfer tray 82. Cool down.
- a DC voltage applying unit 86a for applying a DC voltage is connected to the base 83 formed of metal.
- the DC voltage application unit 86a includes, for example, a DC power supply device, connection wiring, and the like. By applying such a DC voltage, the base 83 is charged positively or negatively.
- Second conductive layers 85a and 85b for electrostatic adsorption are embedded in the support surface 87a of the support 87 that contacts the other surface (second surface) 82b of the wafer transfer tray 82 and supports the wafer transfer tray 82.
- the second insulating layer 84b is formed.
- the second conductive layers 85a and 85b are entirely made of a conductor such as metal, for example, aluminum, tungsten, titanium, or an alloy containing these.
- the second insulating layer 84b is made of ceramics, for example.
- a DC voltage application unit 86b and a DC voltage application unit 86c for applying a DC voltage are connected to the second conductive layer 85a and the second conductive layer 85b, respectively.
- the DC voltage application units 86b and 86c are constituted by, for example, a DC power supply device, connection wiring, and the like.
- the second conductive layers 85a and 85b are charged with opposite polarities to form a bipolar electrostatic chuck.
- a high frequency voltage application unit 88 for applying a high frequency voltage is connected to the support 87.
- the high-frequency voltage application unit 88 includes, for example, a high-frequency power supply device, connection wiring, and the like. Accordingly, the support 87 functions as a lower electrode that generates plasma P between the upper electrode 18 (see FIG. 1).
- the base 83 formed of metal, the support 87, the second insulating layer 84b in which the second conductive layers 85a and 85b are embedded, and the DC voltage application portions 86a, 86b, and 86c.
- a double-sided electrostatic chuck is configured.
- the substrate 83 of the wafer transfer tray 82 is positively or negatively charged by applying a DC voltage to the substrate 83 formed of metal by the DC voltage application unit 86a.
- the wafer W is electrostatically attracted to the wafer transport tray 82 by a Coulomb force (electrostatic attracting force) generated by the charge induced between the wafer W placed on the wafer transport tray 82 and the substrate 83. Is done.
- the wafer W and the support 87 are electrostatically adsorbed on the both surfaces of the one surface 82a and the other surface 82b of the wafer transfer tray 82 by the double-surface electrostatic adsorption unit of the plasma processing apparatus 80, respectively. That is, the wafer W is electrostatically attracted to one surface 82 a of the wafer transport tray 82, and the support 87 is electrostatically attracted to the other surface 82 b of the wafer transport tray 82.
- the wafer transfer tray is efficiently and uniformly made. Since cooling is possible, uniform and accurate plasma processing can be performed on the wafer W.
- the wafer transfer tray 82 and the support 87 are brought into close contact with each other. Therefore, the wafer transfer tray 82 can be efficiently cooled by the cooling gas supplied from the gas supply unit 25. Further, due to the close contact between the wafer transfer tray 82 and the support 87, loss due to dissipation of the cooling gas can be reduced.
- the plasma processing apparatus 80 is electrically connected to the wafer transfer tray and the support.
- the mechanically movable parts are reduced. This makes it possible to easily fix the wafer transfer tray and the support with a simple configuration.
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Abstract
Description
本願は、2014年1月22日に日本に出願された特願2014-009682号に基づき優先権を主張し、その内容をここに援用する。
すなわち、本発明の第一態様に係るプラズマ処理装置は、第1の面と前記第1の面とは反対の第2の面とを有し、前記第1の面でウェハを保持するウェハ搬送用トレイと、前記ウェハ搬送用トレイを冷却する冷却部と、前記ウェハ搬送用トレイの前記第2の面を支持する導電性の支持体と、前記ウェハ搬送用トレイの前記第1の面で前記ウェハを静電吸着し、前記ウェハ搬送用トレイの前記第2の面で前記支持体を静電吸着する両面静電吸着部と、を備える。
図1は、本発明の第一実施形態に係るプラズマ処理装置全体を示す断面図である。
プラズマ処理装置10は、プラズマ処理槽(チャンバー)11と、プラズマ処理槽11の内部の上面付近に配置される上部電極18と、プラズマ処理槽11の内部の底面付近に配置され、下部電極を形成する支持体12と、支持体12に載置されるウェハ搬送用トレイ13を有する支持部15と、を備えている。
こうした高抵抗体は、例えば、抵抗値が制御されたセラミックス板であればよい。
また、第一導電層22は金属、例えば、アルミニウム、タングステン、チタン、あるいはこれらを含む合金から構成される。こうした第一導電層22は、例えば、基体21の一面21aから数百マイクロメーター~数ミリ深い位置において、この基体21の一面21aと平行に広がるように形成されていればよい。
なお基体21に流路を形成し、この流路に冷媒を流してウェハ搬送用トレイ13を冷却する構造にすれば、ウェハの冷却効率をより向上させることができる。
直流電圧印加部26は、例えば、直流電源装置や、接続配線等から構成される。第一導電層22に印加する直流電圧としては、例えば、1000V~5000V程度であればよい。こうした直流電圧の印加によって、第一導電層22は正または負に帯電する。
高周波電圧印加部27は、例えば、高周波電源装置や、接続配線等から構成される。これによって、支持体12は上部電極18との間でプラズマPを生じさせる下部電極として機能する。
以上のような構成の本実施形態では、基体21、第一導電層22、支持体12、直流電圧印加部26、および接地部28によって、両面静電吸着部が構成される。
本実施形態に係るプラズマ処理装置10では、直流電圧印加部26によって第一導電層22に直流電圧を印加することによって、ウェハ搬送用トレイ13の第一導電層22は正または負に帯電する。これによって、ウェハ搬送用トレイ13の凹部23に載置されたウェハWと第一導電層22との間に誘起された電荷により生じるクーロン力(静電吸着力)によって、ウェハWがウェハ搬送用トレイ13に静電吸着される。
図3は、本発明の第二実施形態に係るプラズマ処理装置の支持部付近を示す断面図である。
第二実施形態に係るプラズマ処理装置30の支持部31におけるウェハ搬送用トレイ32は、絶縁体から形成される基体33と、この基体33の他面33bよりも一面(第1の面)33aに近い位置に埋設された静電吸着用の第一導電層34と、基体33の一面33aよりも他面(第2の面)33bに近い位置に埋設された静電吸着用の第二導電層35と、を有する。
高周波電圧印加部38は、例えば、高周波電源装置や、接続配線等から構成される。これによって、支持体37は上部電極18(図1参照)との間でプラズマPを生じさせる下部電極として機能する。
以上のような構成の本実施形態では、基体33、第一導電層34、第二導電層35、支持体37、直流電圧印加部36、および接地部39によって、両面静電吸着部が構成される。
本実施形態に係るプラズマ処理装置30では、直流電圧印加部36によって第一導電層34に直流電圧が印加されることによって、ウェハ搬送用トレイ32の第一導電層34は正または負に帯電する。これによって、ウェハ搬送用トレイ32に載置されたウェハWと第一導電層34との間に誘起された電荷により生じるクーロン力(静電吸着力)によって、ウェハWがウェハ搬送用トレイ32に静電吸着される。
図4は、本発明の第三実施形態に係るプラズマ処理装置の支持部付近を示す断面図である。
第三実施形態に係るプラズマ処理装置40の支持部41におけるウェハ搬送用トレイ42は、絶縁体から形成される基体43と、この基体43の他面43bよりも一面(第1の面)43aに近い位置に埋設された静電吸着用の第一導電層44と、基体43の他面(第2の面)43bに露出するように配された導電体45と、を有する。
高周波電圧印加部48は、例えば、高周波電源装置や、接続配線等から構成される。これによって、支持体47は上部電極18(図1参照)との間でプラズマPを生じさせる下部電極として機能する。
本実施形態に係るプラズマ処理装置40では、直流電圧印加部46aによって第一導電層44に直流電圧が印加されることによって、ウェハ搬送用トレイ42の第一導電層44は正または負に帯電する。これによって、ウェハ搬送用トレイ42に載置されたウェハWと第一導電層44との間に誘起された電荷により生じるクーロン力(静電吸着力)によって、ウェハWがウェハ搬送用トレイ42に静電吸着される。
図5は、本発明の第四実施形態に係るプラズマ処理装置の支持部付近を示す断面図である。
第四実施形態のプラズマ処理装置50の支持部51におけるウェハ搬送用トレイ52は、金属から形成される基体53と、この基体53の一面(第1の面)53aに形成され、第一導電層54aを埋設した第一絶縁層55aと、基体53の他面(第2の面)53bに形成され、第二導電層54bを埋設した第二絶縁層55bと、を有する。
高周波電圧印加部58は、例えば、高周波電源装置や、接続配線等から構成される。これによって、支持体57は上部電極18(図1参照)との間でプラズマPを生じさせる下部電極として機能する。
本実施形態に係るプラズマ処理装置50では、直流電圧印加部56によって第一導電層54aに直流電圧が印加されることによって、ウェハ搬送用トレイ52の第一導電層54aは正または負に帯電する。これによって、ウェハ搬送用トレイ52に載置されたウェハWと第一導電層54aとの間に誘起された電荷により生じるクーロン力(静電吸着力)によって、ウェハWがウェハ搬送用トレイ52に静電吸着される。
図6は、本発明の第五実施形態に係るプラズマ処理装置の支持部付近を示す断面図である。
第五実施形態に係るプラズマ処理装置60の支持部61におけるウェハ搬送用トレイ62は、金属から形成される基体63と、この基体63の一面(第1の面)63aに形成され、第一導電層64を埋設した第一絶縁層69aと、を有する。
第二導電層65a,65bは、全体が金属などの導電体、例えば、アルミニウム、タングステン、チタン、あるいはこれらを含む合金から構成される。また、第二絶縁層69bは、例えば、セラミックスから構成される。
高周波電圧印加部68は、例えば、高周波電源装置や、接続配線等から構成される。これによって、支持体67は上部電極18(図1参照)との間でプラズマPを生じさせる下部電極として機能する。
本実施形態に係るプラズマ処理装置60では、直流電圧印加部66aによって第一導電層64に直流電圧が印加されることによって、ウェハ搬送用トレイ62の第一導電層64は正または負に帯電する。これによって、ウェハ搬送用トレイ62に載置されたウェハWと第一導電層64との間に誘起された電荷により生じるクーロン力(静電吸着力)によって、ウェハWがウェハ搬送用トレイ62に静電吸着される。
図7は、本発明の第六実施形態に係るプラズマ処理装置の支持部付近を示す断面図である。
第六実施形態のプラズマ処理装置70の支持部71におけるウェハ搬送用トレイ72は、金属から形成される基体73と、この基体73の外周面を覆う絶縁層74と、を有する。
こうした直流電圧の印加によって、基体73は正または負に帯電する。
高周波電圧印加部78は、例えば、高周波電源装置と、接続配線等から構成される。これによって、支持体77は上部電極18(図1参照)との間でプラズマPを生じさせる下部電極として機能する。
本実施形態に係るプラズマ処理装置70では、直流電圧印加部76によって金属から形成される基体73に直流電圧が印加されることによって、ウェハ搬送用トレイ52の基体73は正または負に帯電する。これによって、ウェハ搬送用トレイ72に載置されたウェハWと基体73との間に誘起された電荷により生じるクーロン力(静電吸着力)によって、ウェハWがウェハ搬送用トレイ72に静電吸着される。
図8は、本発明の第七実施形態に係るプラズマ処理装置の支持部付近を示す断面図である。
第七実施形態のプラズマ処理装置80の支持部81におけるウェハ搬送用トレイ82は、金属から形成される基体83と、この基体83の外周面を覆う第一絶縁層84aと、を有する。
第二導電層85a,85bは、全体が金属などの導電体、例えば、アルミニウム、タングステン、チタン、あるいはこれらを含む合金から構成される。また、第二絶縁層84bは、例えば、セラミックスから構成される。
高周波電圧印加部88は、例えば、高周波電源装置や、接続配線等から構成される。これによって、支持体87は上部電極18(図1参照)との間でプラズマPを生じさせる下部電極として機能する。
本実施形態に係るプラズマ処理装置80では、直流電圧印加部86aによって金属から形成される基体83に直流電圧が印加されることによって、ウェハ搬送用トレイ82の基体83は正または負に帯電する。これによって、ウェハ搬送用トレイ82に載置されたウェハWと基体83との間に誘起された電荷により生じるクーロン力(静電吸着力)によって、ウェハWがウェハ搬送用トレイ82に静電吸着される。
Claims (10)
- 第1の面と前記第1の面とは反対の第2の面とを有し、前記第1の面でウェハを保持するウェハ搬送用トレイと、
前記ウェハ搬送用トレイを冷却する冷却部と、
前記ウェハ搬送用トレイの前記第2の面を支持する導電性の支持体と、
前記ウェハ搬送用トレイの前記第1の面で前記ウェハを静電吸着し、前記ウェハ搬送用トレイの前記第2の面で前記支持体を静電吸着する両面静電吸着部と、
を備えるプラズマ処理装置。 - 前記ウェハ搬送用トレイは、絶縁体から形成される基体と、前記基体の第1の面に近い位置に埋設された静電吸着用の第一導電層と、前記基体の第2の面に近い位置に埋設され、前記第一導電層と導通する静電吸着用の第二導電層と、を有し、
前記第一導電層および第二導電層には、直流電圧を印加する直流電圧印加部が接続され、前記支持体には、直流電圧に対する前記支持体の電位を接地電位とする接地部が接続される請求項1記載のプラズマ処理装置。 - 前記ウェハ搬送用トレイは、抵抗値が108Ω以上1011Ω以下の範囲の高抵抗体から形成される基体と、前記基体の前記第1の面に近い位置に埋設された静電吸着用の第一導電層と、を有し、
前記第一導電層には、直流電圧を印加する直流電圧印加部が接続され、前記支持体には、直流電圧に対して前記支持体接地電位とする接地部が接続される請求項1記載のプラズマ処理装置。 - 前記ウェハ搬送用トレイは、絶縁体から形成される基体と、前記基体の前記第1の面に近い位置に埋設された静電吸着用の第一導電層と、前記基体の前記第2の面に露出するように配置された導電体と、を有し、
前記支持体は、前記ウェハ搬送用トレイに対向する支持面に配置された、静電吸着用の第二導電層を埋設した絶縁層を有し、
前記第一導電層および前記第二導電層には、直流電圧を印加する直流電圧印加部が接続される請求項1記載のプラズマ処理装置。 - 前記ウェハ搬送用トレイは、金属から形成される基体と、前記基体の前記第1の面に配置され、静電吸着用の第一導電体を埋設した第一絶縁層と、前記基体の前記第2の面に配置され、前記第一導電層と導通する静電吸着用の第二導電層を埋設した第二絶縁層と、を有し、
前記第一導電層および前記第二導電層には、直流電圧を印加する直流電圧印加部が接続され、
前記支持体には、直流電圧に対する前記支持体の電位を接地電位とする接地部が接続される請求項1記載のプラズマ処理装置。 - 前記ウェハ搬送用トレイは、金属から形成される基体と、前記基体の前記第1の面に配置され、静電吸着用の第一導電層を埋設した第一絶縁層を有し、
前記支持体は、前記ウェハ搬送用トレイに対向する支持面に配置され、静電吸着用の第二導電層を埋設した第二絶縁層を有し、
前記第一導電層および前記第二導電層には、直流電圧を印加する直流電圧印加部が接続される請求項1記載のプラズマ処理装置。 - 前記ウェハ搬送用トレイは、静電吸着用の導電体を構成する金属から形成される基体と、前記基体の外周面を覆う絶縁層と、を有し、
前記基体には、直流電圧を印加する直流電圧印加部が接続され、
前記支持体には、直流電圧に対する前記支持体の電位を接地電位とする接地部が接続される請求項1記載のプラズマ処理装置。 - 前記ウェハ搬送用トレイは、静電吸着用の導電体を構成する金属から形成される基体と、前記基体の外周面を覆う絶縁層と、を有し、
前記支持体は、前記ウェハ搬送用トレイに対向する支持面に配置され、静電吸着用の第二導電層を埋設した絶縁層を有し、
前記基体には、直流電圧を印加する直流電圧印加部が接続される請求項1記載のプラズマ処理装置。 - 前記接地部は、前記支持体に印加される所定の周波数範囲の交流電圧をカットするローパスフィルターを含む請求項2、3、5、及び7のいずれか一項に記載のプラズマ処理装置。
- 第1の面と前記第1の面とは反対の第2の面とを有し、前記第1の面でウェハを保持するウェハ搬送用トレイと、前記ウェハ搬送用トレイを冷却する冷却部と、前記ウェハ搬送用トレイの前記第2の面を支持し、直流電圧に対して接地電位とする接地部を有する支持体と、
直流電圧を印加する直流電圧印加部に接続され、前記基体に埋設された静電吸着用の導電体と、
を備えるプラズマ処理装置のウェハ搬送用トレイ。
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CN112509965A (zh) * | 2021-02-05 | 2021-03-16 | 北京中硅泰克精密技术有限公司 | 静电吸附承载装置及半导体设备 |
CN114220758A (zh) * | 2021-11-29 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 晶圆承载装置及工艺腔室 |
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