JP2009158664A - 静電チャック及び基板温調固定装置 - Google Patents
静電チャック及び基板温調固定装置 Download PDFInfo
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- JP2009158664A JP2009158664A JP2007333867A JP2007333867A JP2009158664A JP 2009158664 A JP2009158664 A JP 2009158664A JP 2007333867 A JP2007333867 A JP 2007333867A JP 2007333867 A JP2007333867 A JP 2007333867A JP 2009158664 A JP2009158664 A JP 2009158664A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】静電電極が内蔵された基体に吸着対象物を載置し、前記静電電極に電圧を印加することで前記吸着対象物との間にクーロン力を発生させ、前記吸着対象物を吸着保持する静電チャックであって、前記基体は、前記吸着対象物と対向する基体上面と、前記吸着対象物が当接する前記基体上面に設けられた突起部とを備え、前記突起部は、前記基体上面の外縁部を除く領域に形成されており、前記外縁部は、前記基体上面と略面一であることを特徴とする。
【選択図】図5
Description
11,101 静電チャック
12,102 基体
12a,102a 基体の上面
12b 基体12の上面12aの外縁部
12c,102c 多数の突起部
13,103 静電電極
14,104 水路
14a,104a 冷却水導入部
14b,104b 冷却水排出部
15,105 接着層
16,106 ベースプレート
16b,106b ベースプレートの下面
17,107 基板
18,108 ガス路
18a,108a ガス導入部
18b,108b ガス排出部
19,109 ガス充填部
20,200 パーティクル
102b 外周シールリング
h1,h2 高さ
φ1,φ2 直径
t1 厚さ
Claims (6)
- 静電電極が内蔵された基体に吸着対象物を載置し、前記静電電極に電圧を印加することで前記吸着対象物との間にクーロン力を発生させ、前記吸着対象物を吸着保持する静電チャックであって、
前記基体は、前記吸着対象物と対向する基体上面と、前記吸着対象物が当接する前記基体上面に設けられた突起部とを備え、
前記突起部は、前記基体上面の外縁部を除く領域に形成されており、前記外縁部は、前記基体上面と略面一であることを特徴とする静電チャック。 - 前記突起部は、平面視水玉模様状に点在するように設けられていることを特徴とする請求項1記載の静電チャック。
- 前記吸着対象物が吸着保持されると、前記吸着対象物の下面の外縁部が、前記クーロン力により、前記基体の上面の前記外縁部と密着することを特徴とする請求項1又は2記載の静電チャック。
- 吸着保持されている前記吸着対象物の下面と、前記基体の上面とが形成する空間に、圧力を調整した不活性ガスを充填することを特徴とする請求項1乃至3の何れか一項記載の静電チャック。
- 請求項1乃至4の何れか一項記載の静電チャックと、前記静電チャックを支持するベースプレートとを有する基板温調固定装置。
- 前記ベースプレートは、前記静電チャックに前記不活性ガスを導入するガス路と、前記静電チャックを加熱する発熱体と、前記静電チャックを冷却する水路とを内蔵することを特徴とする請求項5記載の基板温調固定装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007333867A JP4974873B2 (ja) | 2007-12-26 | 2007-12-26 | 静電チャック及び基板温調固定装置 |
US12/333,491 US8199454B2 (en) | 2007-12-26 | 2008-12-12 | Electrostatic chuck and substrate temperature adjusting-fixing device |
KR1020080133155A KR101458990B1 (ko) | 2007-12-26 | 2008-12-24 | 정전척 및 기판 온도조절-고정장치 |
CNA2008101765999A CN101471278A (zh) | 2007-12-26 | 2008-12-25 | 静电夹盘和基板温度调节固定装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007333867A JP4974873B2 (ja) | 2007-12-26 | 2007-12-26 | 静電チャック及び基板温調固定装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009158664A true JP2009158664A (ja) | 2009-07-16 |
JP2009158664A5 JP2009158664A5 (ja) | 2010-11-25 |
JP4974873B2 JP4974873B2 (ja) | 2012-07-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007333867A Active JP4974873B2 (ja) | 2007-12-26 | 2007-12-26 | 静電チャック及び基板温調固定装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8199454B2 (ja) |
JP (1) | JP4974873B2 (ja) |
KR (1) | KR101458990B1 (ja) |
CN (1) | CN101471278A (ja) |
Cited By (2)
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JP2017530542A (ja) * | 2014-07-23 | 2017-10-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 可変型温度制御式基板支持アセンブリ |
JP2020088195A (ja) * | 2018-11-27 | 2020-06-04 | 東京エレクトロン株式会社 | 基板保持機構および成膜装置 |
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JP2017530542A (ja) * | 2014-07-23 | 2017-10-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 可変型温度制御式基板支持アセンブリ |
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JP7209515B2 (ja) | 2018-11-27 | 2023-01-20 | 東京エレクトロン株式会社 | 基板保持機構および成膜装置 |
Also Published As
Publication number | Publication date |
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US8199454B2 (en) | 2012-06-12 |
JP4974873B2 (ja) | 2012-07-11 |
US20090168291A1 (en) | 2009-07-02 |
CN101471278A (zh) | 2009-07-01 |
KR20090071439A (ko) | 2009-07-01 |
KR101458990B1 (ko) | 2014-11-07 |
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