JP2017530542A - 可変型温度制御式基板支持アセンブリ - Google Patents
可変型温度制御式基板支持アセンブリ Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Drying Of Semiconductors (AREA)
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Abstract
Description
本明細書で説明する実施態様は、一般的に、半導体製造に関し、より詳しくは、温度制御式基板支持アセンブリ及びその使用方法に関する。
デバイスパターンの特徴的寸法が小さくなるのに伴い、それらの特徴の臨界寸法(CD)の要件が、安定しかつ反復可能なデバイス性能のより重要な判定基準となっている。処理チャンバ内で処理された基板中の許容CD偏差は、処理チャンバ及び基板の温度、フローコンダクタンス、RFフィールド等の処理チャンバのアシンメトリにより、達成が困難である。
デバイスパターンの特徴的寸法(フィーチャーサイズ)が小さくなるのに伴い、それらの特徴(フィーチャー)の臨界寸法(CD:クリティカルディメンジョン)の要件が、安定しかつ反復可能なデバイス性能のより重要な判定基準となっている。処理チャンバ内で処理された基板中の許容CD偏差は、処理チャンバ及び基板の温度、フローコンダクタンス、RFフィールド等のチャンバの非対称性により、達成が困難である。
Claims (15)
- 基板支持面及び下面を有する本体と、
前記本体内に配置された1つ以上の主抵抗ヒータと、
前記本体内に配置された複数の空間可変型ヒータと、
前記複数の空間可変型ヒータに結合され、前記複数の空間可変型ヒータのうちの1つへの出力を前記複数の空間可変型ヒータの他への出力に対して個別に制御するように構成された空間可変型ヒータコントローラとを備えた基板支持アセンブリ。 - 前記本体は、前記空間可変型ヒータと前記本体の実装面との間に形成されたビアを有する請求項1に記載の基板支持アセンブリ。
- 前記ビアに取り付けられ、かつ前記実装面に配置された複数の高密度コネクタをさらに備えた請求項2に記載の基板支持アセンブリ。
- 前記本体の実装面の高密度コネクタと前記空間可変型ヒータコントローラとの間の電気接続を、マッティングコネクタが提供している請求項3に記載の基板支持アセンブリ。
- 前記空間可変型ヒータコントローラが、
それぞれの空間可変型ヒータに個別に電力を供給するように構成された電気コントローラと、
外部コントローラに接続して、前記電気コントローラにそれぞれの空間可変型ヒータへの電力供給を行わせる指示を送信するように構成された光コントローラとを備えた請求項1に記載の基板支持アセンブリ。 - 前記空間可変型ヒータコントローラには、単一のRFフィルタが取り付けられている請求項5に記載の基板支持アセンブリ。
- 前記空間可変型ヒータコントローラは、前記クーリングベースの底面の下に配置されている請求項5に記載の基板支持アセンブリ。
- 複数のスロットが貫通形成されたクーリングベースと、
基板支持面及び下面を有する本体と、
前記本体内に配置された1つ以上の主抵抗ヒータと、
前記本体内に配置された複数の空間可変型ヒータと、
前記空間可変型ヒータに結合され、前記クーリングベースに貫通形成されたスロットを通して延びる複数の高密度導体とを備えた基板支持アセンブリ。 - 前記本体は静電チャックである請求項1及び請求項8に記載の基板支持アセンブリ。
- 前記本体はセラミック材料で形成されている請求項9に記載の基板支持アセンブリ。
- 前記複数の高密度導体によって前記複数の空間可変型ヒータに結合され、前記複数の空間可変型ヒータのうちの1つへの出力を前記複数の空間可変型ヒータの他への出力に対して個別に制御するように構成された空間可変型ヒータコントローラをさらに備えた請求項8に記載の基板支持アセンブリ。
- 前記空間可変型ヒータコントローラが、
それぞれの空間可変型ヒータに個別に電力を供給するように構成された電気コントローラと、
外部コントローラに接続して、前記電気コントローラにそれぞれの空間可変型ヒータへの電力供給を行わせる指示を送信するように構成された光コントローラと、を備え、
前記空間可変型ヒータコントローラには、単一のRFフィルタが取り付けられている請求項11に記載の基板支持アセンブリ。 - ワークピースの温度を制御する方法であって、
基板支持内に作成された主抵抗ヒータに電力を印加するステップと、
複数の空間可変型ヒータに電力を供給するステップであって、それぞれの空間可変型ヒータへの電力はヒータ調整コントローラによって個別に制御されているステップと、
基板支持上でワークピースを処理するステップと、
処理条件又は処理法の変更に対応してそれぞれの空間可変型ヒータに供給される電力を変更するステップとを含む方法。 - 前記ヒータ調整コントローラへの光接続によってRFから隔離された外部コントローラで、それぞれの空間可変型ヒータに電力を送るように前記ヒータ調整コントローラを制御するステップをさらに含む請求項13に記載の方法。
- 前記ヒータ調整コントローラは、異なる重複期間に空間可変型ヒータに同時に電力を供給する請求項14に記載の方法。
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US201462028260P | 2014-07-23 | 2014-07-23 | |
US62/028,260 | 2014-07-23 | ||
US201462028693P | 2014-07-24 | 2014-07-24 | |
US62/028,693 | 2014-07-24 | ||
PCT/US2015/029725 WO2016014138A1 (en) | 2014-07-23 | 2015-05-07 | Tunable temperature controlled substrate support assembly |
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KR (2) | KR102302723B1 (ja) |
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JP7351988B2 (ja) | 2021-08-31 | 2023-09-27 | セメス カンパニー,リミテッド | ヒーティング部材及び基板処理装置 |
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TW201518538A (zh) | 2013-11-11 | 2015-05-16 | Applied Materials Inc | 像素化冷卻溫度控制的基板支撐組件 |
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