JP6987166B2 - ピクセル型温度制御式基板支持アセンブリ - Google Patents
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- 239000000758 substrate Substances 0.000 claims description 164
- 238000012545 processing Methods 0.000 claims description 69
- 230000003287 optical effect Effects 0.000 claims description 30
- 238000001816 cooling Methods 0.000 claims description 26
- 239000000919 ceramic Substances 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 13
- 239000000853 adhesive Substances 0.000 description 12
- 230000001070 adhesive effect Effects 0.000 description 12
- 238000012546 transfer Methods 0.000 description 11
- 239000007767 bonding agent Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000012530 fluid Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 230000000712 assembly Effects 0.000 description 5
- 238000000429 assembly Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000013529 heat transfer fluid Substances 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229910001120 nichrome Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 2
- 229910033181 TiB2 Inorganic materials 0.000 description 2
- 239000003522 acrylic cement Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005289 physical deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001084 poly(chloroprene) Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920006260 polyaryletherketone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Description
本明細書に記載した実施形態は、一般的に、半導体製造に関し、特に、温度制御式基板支持アセンブリ及びそれを用いる方法に関する。
デバイスパターンの加工寸法が小さくなると、これらの加工の臨界寸法(CD)要件は、安定しかつ繰り返し可能なデバイス性能のさらに重要な判断基準になる。処理チャンバ内において処理される基板全体の許容可能なCDのばらつきは、チャンバ及び基板温度等のチャンバ非対称性、フローコンダクタンス、ならびにRFフィールドにより、達成するのが困難である。
(実施例1)
チャンバ本体と、
上面及び下面を含むピクセル型基板支持アセンブリと、
ピクセル型基板支持アセンブリ内に配置された1つ又は複数の主抵抗ヒータと、
主抵抗ヒータと列をなし、またピクセル型基板支持体内に配置される複数のピクセルヒータと、を含む処理チャンバであって、ピクセルヒータの数量は、主抵抗ヒータの数量より1桁大きく、ピクセルヒータは、主抵抗ヒータと同様に、互いに対して独立して制御可能である処理チャンバ。
(実施例2)
ピクセル型基板支持体は、静電チャックである実施例1の処理チャンバ。
(実施例3)
静電チャックが、セラミック本体を有する実施例1の処理チャンバ。
(実施例4)
主抵抗ヒータ及び複数のピクセルヒータの内の少なくとも1つが、セラミック本体の下面に形成される実施例3の処理チャンバ。
(実施例5)
主抵抗ヒータ及び複数のピクセルヒータの内の少なくとも1つが、セラミック本体の下面に結合されたポリマ本体内に配置される実施例3の処理チャンバ。
(実施例6)
ピクセル型基板支持体に結合された冷却板をさらに含む実施例1の処理チャンバ。
(実施例7)
各ピクセルヒータの温度出力を調整するためのピクセルヒータ・コントローラが、冷却板に結合されている実施例6の処理チャンバ。
(実施例8)
ピクセルヒータ・コントローラには、光ファイバ制御回路及び電力制御手段が含まれる実施例7の処理チャンバ。
(実施例9)
基板支持面及び下面を有する基板支持体と、
基板支持体全体に配置された複数の抵抗ヒータであって、同心ゾーンにグループ化された複数の抵抗ヒータと、
各グループの抵抗ヒータに結合されたピクセルヒータ・コントローラであって、所定ゾーン内のどの抵抗ヒータが、その所定ゾーン内の他の抵抗ヒータより多くの熱を生成するかを制御するように動作可能なピクセルヒータ・コントローラとを含む基板支持アセンブリ。
(実施例10)
ピクセルヒータ・コントローラは、光ファイバ制御回路及び電力制御手段を含む実施例9の処理チャンバ。
(実施例11)
ピクセルヒータ・コントローラは、1つ又は複数のハードウェア配線キーを含む実施例9の処理チャンバ。
Claims (14)
- セラミック材料の単一の一体塊から形成された誘電体であって、誘電体は、
上面及び下面と、
誘電体内に配置されたチャック電極と、
誘電体内に配置された1つ以上の主抵抗ヒータと、
主抵抗ヒータと列をなす複数の2次ヒータであって、
複数の2次ヒータは誘電体内に配置され、
2次ヒータの数量は、主抵抗ヒータの数量よりも多く、
複数の2次ヒータのうちの個々の2次ヒータの各組み合わせは、1つ以上の主抵抗ヒータと同様に、他の全ての個々の2次ヒータのオン状態を変更することなく、オン状態とオフ状態を独立して制御可能である複数の2次ヒータとを備えている誘電体を備える静電チャック(ESC)。 - 複数の2次ヒータは、誘電体の中心の周りに同心状に配置され、共通の半径に沿って2次ヒータのグループへ分けられている、請求項1に記載のESC。
- 複数の2次ヒータは、極格子状にさらに配置されている、請求項2に記載のESC。
- チャック電極は、複数の2次ヒータと上面との間に配置されている、請求項1に記載のESC。
- 複数のスイッチをさらに備え
各スイッチは、2次ヒータのそれぞれと独自に対になって、2次ヒータの1つを、他の全ての2次ヒータのオン状態に対して独立に制御可能にしている、請求項1に記載のESC。 - 誘電体を有する基板支持体であって、誘電体は、
基板支持面及び下面と、
基板支持体の誘電体内に配置された複数の抵抗2次ヒータであって、複数の抵抗2次ヒータの各々は、互いに独立して制御可能になっている複数の抵抗2次ヒータとを備えている基板支持体と、
誘電体内に結合または配置された主抵抗ヒータであって、複数の抵抗2次ヒータは、主抵抗ヒータに対して独立して制御可能になっている主抵抗ヒータと、
複数の抵抗2次ヒータに接続されたヒータコントローラであって、
ヒータコントローラは、光学コントローラと電力コントローラを備え、
光学コントローラは、複数の抵抗2次ヒータのうちの各抵抗2次ヒータのそれぞれのステートスイッチに光学的に接続され、
ヒータコントローラは、抵抗2次ヒータの各組み合わせに、他の全ての数量の抵抗2次ヒータに対して独立して電力を供給するように構成され、
その数量は2以上になっているヒータコントローラとを備える基板支持アセンブリ。 - 基板支持体は静電チャックであり、静電チャックの誘電体はセラミックである、請求項6に記載の基板支持アセンブリ。
- 複数の抵抗2次ヒータは、共通の半径に沿った抵抗2次ヒータのグループに分かれて同心状に配置され、
主抵抗ヒータは、誘電体の下面に形成されている、請求項6に記載の基板支持アセンブリ。 - 主抵抗ヒータは、誘電体の下面に結合されたポリマ体に配置されている、請求項8に記載の基板支持アセンブリ。
- 基板支持体に結合された冷却板をさらに備える、請求項6に記載の基板支持アセンブリ。
- チャック電極が、複数の抵抗2次ヒータと基板支持面との間に配置されている、請求項6に記載の基板支持アセンブリ。
- チャンバ本体と、
静電チャックを有する基板支持アセンブリであって、
静電チャックは、セラミック材料の単一の一体塊から形成された誘電体を有し、
誘電体は、
上面及び下面と、
誘電体内に配置されたチャック電極と、
誘電体内に配置された1つ以上の主抵抗ヒータと、
主抵抗ヒータと列をなす複数の2次ヒータであって、
複数の2次ヒータは、誘電体の中心の周りに同心状に配置され、誘電体内の共通の半径に沿って2次ヒータのグループへ分けられており、
2次ヒータの数量は、主抵抗ヒータの数量よりも多く、
複数の2次ヒータのうちの2次ヒータの各組み合わせは、独立して対処可能であり、主抵抗ヒータと同様に、他の全ての2次ヒータのオン状態に対してオフ状態とオン状態の間で制御され、
2次ヒータの各組み合わせは、他の2次ヒータの各々に印加される電圧または電流とは無関係に電圧または電流を受け取るように構成されている複数の2次ヒータとを備えている基板支持アセンブリと、
冷却板に結合された各2次ヒータの温度出力を調整するヒータコントローラとを備え、
ヒータコントローラは、各2次ヒータへ、他の2次ヒータから独立してある範囲の電流または電圧を供給し、
ヒータコントローラは、光ファイバ制御回路及び電力制御を備えている、処理チャンバ。 - 複数の2次ヒータは、極格子状にさらに配置されている、請求項12に記載の処理チャンバ。
- チャック電極は、複数の2次ヒータと上面との間に配置されている、請求項12に記載の処理チャンバ。
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