JP2015535389A - フォトニクス構造の形成方法 - Google Patents
フォトニクス構造の形成方法 Download PDFInfo
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- JP2015535389A JP2015535389A JP2015529848A JP2015529848A JP2015535389A JP 2015535389 A JP2015535389 A JP 2015535389A JP 2015529848 A JP2015529848 A JP 2015529848A JP 2015529848 A JP2015529848 A JP 2015529848A JP 2015535389 A JP2015535389 A JP 2015535389A
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 239000002019 doping agent Substances 0.000 claims abstract description 29
- 230000004913 activation Effects 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 83
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 239000012212 insulator Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 238000001465 metallisation Methods 0.000 claims description 12
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000003213 activating effect Effects 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 230000008569 process Effects 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000002955 isolation Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000005380 borophosphosilicate glass Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241000408659 Darpa Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12169—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Optical Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (21)
- 集積構造を製造する方法であって、
電子デバイスを含む製造されたCMOS構造の上に第一の半導体材料を形成することと、
前記第一の半導体材料に関連するフォトニックデバイスであって、関連するドープ領域を有するフォトニックデバイスを製造することと、
前記ドープ領域がおよそ摂氏200度〜およそ摂氏500度の範囲内の温度まで加熱されるように、マイクロ波エネルギーを用いて前記ドープ領域を活性化させることと
を含む、方法。 - 前記ドープ領域が、およそ摂氏300度〜およそ摂氏400度の範囲内の温度まで加熱される、請求項1に記載の方法。
- 前記第一の半導体材料が、前記CMOS構造の前記電子デバイスが形成される第二の半導体材料よりも厚い、請求項1に記載の方法。
- 前記第一の半導体材料に隣接する埋め込み酸化物材料を形成することをさらに含む、請求項3に記載の方法。
- 前記埋め込み酸化物材料の厚さが1マイクロメートル以上であり、前記第一の半導体材料の厚さが200ナノメートル以上である、請求項4に記載の方法。
- 前記フォトニックデバイスが光検出器を備えている、請求項1に記載の方法。
- 前記フォトニックデバイスが、導波路、変調器、復調器および光検出器からなる群より選択されたデバイスである、請求項1に記載の方法。
- 前記ドーパントが少なくともおよそ5分間マイクロ波エネルギーで加熱される、請求項1に記載の方法。
- 前記ドーパントが最長およそ2時間マイクロ波エネルギーで加熱される、請求項8に記載の方法。
- 前記活性化工程が、およそ1.5Ghz以上かつおよそ8.5GHz以下の周波数のマイクロ波を使用する、請求項1に記載の方法。
- 前記活性化工程が、およそ2.45GHzの周波数かつおよそ1300Wの電力におけるマイクロ波を使用する、請求項1に記載の方法。
- 前記第一の半導体材料における導波路、および前記導波路に関連する光検出器材料を形成することをさらに含む、請求項1に記載の方法。
- 前記活性化を前記光検出器材料の形成前に行う、請求項12に記載の方法。
- 前記活性化を前記光検出器材料の形成後に行う、請求項12に記載の方法。
- 前記光検出器材料がゲルマニウムおよびシリコンゲルマニウムのいずれかを含む、請求項13に記載の方法。
- メタライゼーション材料と前記フォトニックデバイスとの間に電気的接続を形成することをさらに含む、請求項1に記載の方法。
- 前記CMOS構造における電子デバイスに関連するメタライゼーション材料と、前記フォトニックデバイスに関連するメタライゼーション材料との間に電気的接続を形成することをさらに含む、請求項16に記載の方法。
- 第一の半導体構造に製造された少なくとも一つの電子デバイスと、
前記少なくとも一つの電子デバイスの上に形成された半導体材料に製造された少なくとも一つのフォトニックデバイスと
を備えており、
前記少なくとも一つのフォトニックデバイスが、マイクロ波で活性化されたドーパント注入に関連する、
半導体構造。 - 前記半導体材料が、前記第一の半導体基板の上に形成された絶縁体基板にシリコンの一部を形成する、請求項18に記載の半導体構造。
- 前記フォトニックデバイスが、導波路、変調器、復調器および光検出器からなる群より選択された、請求項18に記載の半導体構造。
- 前記フォトニックデバイスと前記少なくとも一つの電子デバイスとの間に電気的接続をさらに備えている、請求項18に記載の半導体構造。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US13/600,779 US10094988B2 (en) | 2012-08-31 | 2012-08-31 | Method of forming photonics structures |
US13/600,779 | 2012-08-31 | ||
PCT/US2013/055135 WO2014035679A1 (en) | 2012-08-31 | 2013-08-15 | Method of forming photonics structures |
Publications (2)
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JP2015535389A true JP2015535389A (ja) | 2015-12-10 |
JP6154903B2 JP6154903B2 (ja) | 2017-06-28 |
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US (4) | US10094988B2 (ja) |
EP (1) | EP2891180B1 (ja) |
JP (1) | JP6154903B2 (ja) |
KR (1) | KR101742407B1 (ja) |
CN (1) | CN104769716B (ja) |
SG (1) | SG11201500915SA (ja) |
TW (1) | TWI520313B (ja) |
WO (1) | WO2014035679A1 (ja) |
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US10094988B2 (en) | 2012-08-31 | 2018-10-09 | Micron Technology, Inc. | Method of forming photonics structures |
CN106159036A (zh) * | 2015-04-13 | 2016-11-23 | 中兴通讯股份有限公司 | 一种硅基光电子系统的制备方法 |
US9874693B2 (en) | 2015-06-10 | 2018-01-23 | The Research Foundation For The State University Of New York | Method and structure for integrating photonics with CMOs |
JP6533131B2 (ja) * | 2015-09-04 | 2019-06-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP6545608B2 (ja) * | 2015-11-30 | 2019-07-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10431670B2 (en) * | 2016-12-15 | 2019-10-01 | Taiwan Semiconductor Manufacturing Co., Ltd | Source and drain formation technique for fin-like field effect transistor |
US11295962B2 (en) | 2018-07-10 | 2022-04-05 | The Board Of Trustees Of The Leland Stanford Junior University | Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors |
US10649140B1 (en) * | 2019-03-04 | 2020-05-12 | Globalfoundries Inc. | Back-end-of-line blocking structures arranged over a waveguide core |
US11906351B1 (en) * | 2019-09-25 | 2024-02-20 | National Technology & Engineering Solutions Of Sandia, Llc | Monolithic integration of optical waveguides with metal routing layers |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08316449A (ja) * | 1995-03-13 | 1996-11-29 | Nec Corp | 半導体装置及びその製造方法 |
JP2003517635A (ja) * | 1999-12-14 | 2003-05-27 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 標準的なcmos回路と共に集積された導波路構造体およびその製造方法 |
JP2005123513A (ja) * | 2003-10-20 | 2005-05-12 | Nippon Telegr & Teleph Corp <Ntt> | 光検出器 |
JP2006133723A (ja) * | 2004-10-08 | 2006-05-25 | Sony Corp | 光導波モジュール及び光・電気複合デバイス、並びにこれらの製造方法 |
JP2006525677A (ja) * | 2003-04-21 | 2006-11-09 | シオプティカル インコーポレーテッド | シリコン・ベースの光デバイスの電子デバイスとのcmos互換集積化 |
JP2007535174A (ja) * | 2004-04-26 | 2007-11-29 | バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド | 光学照射を用いた接合形成装置及び方法 |
JP2009058888A (ja) * | 2007-09-03 | 2009-03-19 | Sony Corp | 半導体装置およびその製造方法ならびに実装基板 |
WO2010004850A1 (ja) * | 2008-07-07 | 2010-01-14 | 日本電気株式会社 | 光配線構造 |
WO2010028355A1 (en) * | 2008-09-08 | 2010-03-11 | Luxtera, Inc. | Monolithic integration of photonics and electronics in cmos processes |
EP2200084A1 (en) * | 2008-12-22 | 2010-06-23 | S.O.I. TEC Silicon | Method of fabricating a back-illuminated image sensor |
JP2010278175A (ja) * | 2009-05-28 | 2010-12-09 | Sony Corp | 半導体装置の製造方法 |
WO2012008272A1 (ja) * | 2010-07-16 | 2012-01-19 | 日本電気株式会社 | 受光素子及びそれを備えた光通信デバイス、並びに受光素子の製造方法及び光通信デバイスの製造方法 |
JP2012053399A (ja) * | 2010-09-03 | 2012-03-15 | Toshiba Corp | 光変調素子 |
JP2012513118A (ja) * | 2008-12-18 | 2012-06-07 | マイクロン テクノロジー, インク. | キャパシタレスメモリセルを論理素子と集積化するための方法および構造 |
JP2012134460A (ja) * | 2010-12-03 | 2012-07-12 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US200084A (en) * | 1878-02-05 | Improvement in bee-hives | ||
KR960008503B1 (en) * | 1991-10-04 | 1996-06-26 | Semiconductor Energy Lab Kk | Manufacturing method of semiconductor device |
US5424244A (en) * | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
US5304509A (en) * | 1992-08-24 | 1994-04-19 | Midwest Research Institute | Back-side hydrogenation technique for defect passivation in silicon solar cells |
US6018187A (en) | 1998-10-19 | 2000-01-25 | Hewlett-Packard Cmpany | Elevated pin diode active pixel sensor including a unique interconnection structure |
EP2259299A1 (en) * | 1999-10-14 | 2010-12-08 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing SOI wafer, and SOI wafer |
GB0002775D0 (en) * | 2000-02-07 | 2000-03-29 | Univ Glasgow | Improved integrated optical devices |
US6680495B2 (en) * | 2000-08-04 | 2004-01-20 | Amberwave Systems Corporation | Silicon wafer with embedded optoelectronic material for monolithic OEIC |
US6472243B2 (en) * | 2000-12-11 | 2002-10-29 | Motorola, Inc. | Method of forming an integrated CMOS capacitive pressure sensor |
US7038242B2 (en) * | 2001-02-28 | 2006-05-02 | Agilent Technologies, Inc. | Amorphous semiconductor open base phototransistor array |
US20030021515A1 (en) * | 2001-07-25 | 2003-01-30 | Motorola, Inc. | Semiconductor structure employing a multi-path wave guide to concurrently route signals |
WO2003041143A1 (fr) * | 2001-11-09 | 2003-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif de traitement par faisceau laser et dispositif semi-conducteur |
US6861341B2 (en) * | 2002-02-22 | 2005-03-01 | Xerox Corporation | Systems and methods for integration of heterogeneous circuit devices |
JP2003287636A (ja) * | 2002-03-28 | 2003-10-10 | Nec Corp | 光機能デバイスおよびその製造方法 |
US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
US7043106B2 (en) * | 2002-07-22 | 2006-05-09 | Applied Materials, Inc. | Optical ready wafers |
US20040062465A1 (en) * | 2002-10-01 | 2004-04-01 | Woodley Bruce Robert | Apparatus and method for measuring optical power as a function of wavelength |
US6935792B2 (en) * | 2002-10-21 | 2005-08-30 | General Electric Company | Optoelectronic package and fabrication method |
US6995407B2 (en) * | 2002-10-25 | 2006-02-07 | The University Of Connecticut | Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices |
JP2004186495A (ja) * | 2002-12-04 | 2004-07-02 | Toshiba Corp | 半導体装置の製造装置、半導体装置の製造方法、および半導体装置 |
EP1618421A1 (en) * | 2003-04-29 | 2006-01-25 | Pirelli & C. S.p.A. | Coupling structure for optical fibres and process for making it |
US7262117B1 (en) * | 2003-06-10 | 2007-08-28 | Luxtera, Inc. | Germanium integrated CMOS wafer and method for manufacturing the same |
JPWO2005052666A1 (ja) * | 2003-11-27 | 2008-03-06 | イビデン株式会社 | Icチップ実装用基板、マザーボード用基板、光通信用デバイス、icチップ実装用基板の製造方法、および、マザーボード用基板の製造方法 |
US7292745B2 (en) * | 2004-01-13 | 2007-11-06 | Franklin W. Dabby | System for and method of manufacturing optical/electronic integrated circuits |
US9813152B2 (en) | 2004-01-14 | 2017-11-07 | Luxtera, Inc. | Method and system for optoelectronics transceivers integrated on a CMOS chip |
US7385167B2 (en) | 2004-07-19 | 2008-06-10 | Micron Technology, Inc. | CMOS front end process compatible low stress light shield |
US7098070B2 (en) * | 2004-11-16 | 2006-08-29 | International Business Machines Corporation | Device and method for fabricating double-sided SOI wafer scale package with through via connections |
KR100610016B1 (ko) * | 2004-11-18 | 2006-08-08 | 삼성전자주식회사 | 반도체 디바이스 제조를 위한 불순물 원자 활성화 장치 및그 방법 |
US8294078B2 (en) * | 2005-06-24 | 2012-10-23 | The Board Of Trustees Of The University Of Illinois | Optically-triggered multi-stage power system and devices |
KR100621776B1 (ko) | 2005-07-05 | 2006-09-08 | 삼성전자주식회사 | 선택적 에피택셜 성장법을 이용한 반도체 디바이스제조방법 |
US8110823B2 (en) | 2006-01-20 | 2012-02-07 | The Regents Of The University Of California | III-V photonic integration on silicon |
US7515793B2 (en) * | 2006-02-15 | 2009-04-07 | International Business Machines Corporation | Waveguide photodetector |
US7613369B2 (en) * | 2006-04-13 | 2009-11-03 | Luxtera, Inc. | Design of CMOS integrated germanium photodiodes |
US7574090B2 (en) * | 2006-05-12 | 2009-08-11 | Toshiba America Electronic Components, Inc. | Semiconductor device using buried oxide layer as optical wave guides |
US7670927B2 (en) * | 2006-05-16 | 2010-03-02 | International Business Machines Corporation | Double-sided integrated circuit chips |
US7679157B2 (en) * | 2006-08-21 | 2010-03-16 | Powerchip Semiconductor Corp. | Image sensor and fabrication method thereof |
JP2008066410A (ja) | 2006-09-05 | 2008-03-21 | Sony Corp | 固体撮像素子及びその製造方法、並びに半導体装置及びその製造方法 |
WO2008063939A2 (en) * | 2006-11-13 | 2008-05-29 | Syngenta Participations Ag | Pest detector |
US7666723B2 (en) * | 2007-02-22 | 2010-02-23 | International Business Machines Corporation | Methods of forming wiring to transistor and related transistor |
US7781306B2 (en) * | 2007-06-20 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor substrate and method for manufacturing the same |
JP4486985B2 (ja) * | 2007-08-06 | 2010-06-23 | シャープ株式会社 | 固体撮像装置および電子情報機器 |
JP5117156B2 (ja) * | 2007-10-05 | 2013-01-09 | 株式会社日立製作所 | 半導体装置 |
WO2009055778A1 (en) * | 2007-10-25 | 2009-04-30 | Bae Systems Information And Electronic Systems Integration Inc. | Method for manufacturing lateral germanium detectors |
US7811844B2 (en) * | 2007-10-26 | 2010-10-12 | Bae Systems Information And Electronic Systems Integration Inc. | Method for fabricating electronic and photonic devices on a semiconductor substrate |
WO2009058470A1 (en) * | 2007-10-30 | 2009-05-07 | Bae Systems Information And Electronic Systems Integration Inc. | Method for fabricating butt-coupled electro-absorptive modulators |
JP5248995B2 (ja) * | 2007-11-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
JP2009164158A (ja) * | 2007-12-28 | 2009-07-23 | Panasonic Corp | 半導体装置及びその製造方法 |
US7838955B2 (en) * | 2007-12-28 | 2010-11-23 | Dongbu Hitek Co., Ltd. | Image sensor and method for manufacturing the same |
KR100898471B1 (ko) | 2007-12-28 | 2009-05-21 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
US20090188557A1 (en) * | 2008-01-30 | 2009-07-30 | Shih-Yuan Wang | Photonic Device And Method Of Making Same Using Nanowire Bramble Layer |
US7901974B2 (en) * | 2008-02-08 | 2011-03-08 | Omnivision Technologies, Inc. | Masked laser anneal during fabrication of backside illuminated image sensors |
KR100962610B1 (ko) * | 2008-03-17 | 2010-06-11 | 주식회사 티지솔라 | 열처리 방법 |
EP2151856A1 (en) * | 2008-08-06 | 2010-02-10 | S.O.I. TEC Silicon | Relaxation of strained layers |
US7985617B2 (en) | 2008-09-11 | 2011-07-26 | Micron Technology, Inc. | Methods utilizing microwave radiation during formation of semiconductor constructions |
JP5410534B2 (ja) * | 2008-10-14 | 2014-02-05 | コーネル・ユニバーシティー | 位相シフトを入力波形に対して付与する装置 |
US8228409B2 (en) * | 2008-10-24 | 2012-07-24 | Dongbu Hitek Co., Ltd. | Image sensor and method for manufacturing the same |
US8088667B2 (en) * | 2008-11-05 | 2012-01-03 | Teledyne Scientific & Imaging, Llc | Method of fabricating vertical capacitors in through-substrate vias |
US7838337B2 (en) * | 2008-12-01 | 2010-11-23 | Stats Chippac, Ltd. | Semiconductor device and method of forming an interposer package with through silicon vias |
US7847353B2 (en) * | 2008-12-05 | 2010-12-07 | Bae Systems Information And Electronic Systems Integration Inc. | Multi-thickness semiconductor with fully depleted devices and photonic integration |
US7952096B2 (en) * | 2008-12-08 | 2011-05-31 | Omnivision Technologies, Inc. | CMOS image sensor with improved backside surface treatment |
US7927975B2 (en) * | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US8531565B2 (en) * | 2009-02-24 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front side implanted guard ring structure for backside illuminated image sensor |
US9142586B2 (en) * | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
US9305779B2 (en) * | 2009-08-11 | 2016-04-05 | Bae Systems Information And Electronic Systems Integration Inc. | Method for growing germanium epitaxial films |
JP2011071482A (ja) * | 2009-08-28 | 2011-04-07 | Fujifilm Corp | 固体撮像装置,固体撮像装置の製造方法,デジタルスチルカメラ,デジタルビデオカメラ,携帯電話,内視鏡 |
US8121446B2 (en) * | 2009-09-24 | 2012-02-21 | Oracle America, Inc. | Macro-chip including a surface-normal device |
DE102009047873B4 (de) * | 2009-09-30 | 2018-02-01 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG | Optischer Signalaustausch in einem Halbleiterbauelement unter Anwendung monolithischer optoelektronischer Komponenten |
US8450804B2 (en) * | 2011-03-06 | 2013-05-28 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US8257995B2 (en) * | 2009-12-11 | 2012-09-04 | Twin Creeks Technologies, Inc. | Microwave anneal of a thin lamina for use in a photovoltaic cell |
CN102812562B (zh) * | 2010-01-25 | 2016-02-24 | Lg化学株式会社 | 光伏组件 |
WO2011104317A1 (en) * | 2010-02-24 | 2011-09-01 | Universiteit Gent | Laser light coupling into soi cmos photonic integrated circuit |
JP2012008272A (ja) | 2010-06-23 | 2012-01-12 | Olympus Imaging Corp | 防水機器 |
US8399292B2 (en) * | 2010-06-30 | 2013-03-19 | International Business Machines Corporation | Fabricating a semiconductor chip with backside optical vias |
US8901613B2 (en) * | 2011-03-06 | 2014-12-02 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
CN102135649B (zh) * | 2010-08-04 | 2012-04-18 | 华为技术有限公司 | 光模块制造方法及光模块 |
US20120034769A1 (en) * | 2010-08-05 | 2012-02-09 | Purtell Robert J | Low temperature microwave activation of heavy body implants |
CN102446741B (zh) * | 2010-10-07 | 2016-01-20 | 株式会社日立国际电气 | 半导体器件制造方法、衬底处理装置和半导体器件 |
US8796728B2 (en) * | 2010-10-25 | 2014-08-05 | The Board Of Trustees Of The University Of Illinois | Photonically-activated single-bias fast-switching integrated thyristor |
US8633067B2 (en) * | 2010-11-22 | 2014-01-21 | International Business Machines Corporation | Fabricating photonics devices fully integrated into a CMOS manufacturing process |
US8513037B2 (en) * | 2010-12-03 | 2013-08-20 | Bae Systems Information And Electronic Systems Integration Inc. | Method of integrating slotted waveguide into CMOS process |
US8818144B2 (en) * | 2011-01-25 | 2014-08-26 | Tyco Electronics Corporation | Process for preparing an optical interposer for waveguides |
US9146349B2 (en) * | 2011-03-31 | 2015-09-29 | Alcatel Lucent | Monolithic integration of dielectric waveguides and germanium-based devices |
JP5742947B2 (ja) * | 2011-09-09 | 2015-07-01 | 日本電気株式会社 | 受光モジュール |
US9293641B2 (en) * | 2011-11-18 | 2016-03-22 | Invensas Corporation | Inverted optical device |
US20130336346A1 (en) * | 2012-03-05 | 2013-12-19 | Mauro J. Kobrinsky | Optical coupling techniques and configurations between dies |
US9691869B2 (en) * | 2012-04-09 | 2017-06-27 | Monolithic 3D Inc. | Semiconductor devices and structures |
CN104246569A (zh) * | 2012-04-16 | 2014-12-24 | 惠普发展公司,有限责任合伙企业 | 集成光学子组件 |
US9709740B2 (en) * | 2012-06-04 | 2017-07-18 | Micron Technology, Inc. | Method and structure providing optical isolation of a waveguide on a silicon-on-insulator substrate |
US10094988B2 (en) | 2012-08-31 | 2018-10-09 | Micron Technology, Inc. | Method of forming photonics structures |
GB2507512A (en) * | 2012-10-31 | 2014-05-07 | Ibm | Semiconductor device with epitaxially grown active layer adjacent a subsequently grown optically passive region |
US8796747B2 (en) * | 2013-01-08 | 2014-08-05 | International Business Machines Corporation | Photonics device and CMOS device having a common gate |
KR101691851B1 (ko) * | 2013-03-11 | 2017-01-02 | 인텔 코포레이션 | 실리콘 기반 광 집적 회로를 위한 오목 미러를 갖는 저전압 아발란치 광 다이오드 |
US9323008B2 (en) * | 2014-03-25 | 2016-04-26 | Globalfoundries Inc. | Optoelectronic structures having multi-level optical waveguides and methods of forming the structures |
US9326373B2 (en) * | 2014-04-09 | 2016-04-26 | Finisar Corporation | Aluminum nitride substrate |
US9276160B2 (en) * | 2014-05-27 | 2016-03-01 | Opel Solar, Inc. | Power semiconductor device formed from a vertical thyristor epitaxial layer structure |
US9768330B2 (en) * | 2014-08-25 | 2017-09-19 | Micron Technology, Inc. | Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions |
US9395489B2 (en) * | 2014-10-08 | 2016-07-19 | International Business Machines Corporation | Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material |
US9423563B2 (en) * | 2014-10-20 | 2016-08-23 | International Business Machines Corporation | Variable buried oxide thickness for a waveguide |
-
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- 2012-08-31 US US13/600,779 patent/US10094988B2/en active Active
-
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-
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- 2022-07-29 US US17/816,336 patent/US11886019B2/en active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08316449A (ja) * | 1995-03-13 | 1996-11-29 | Nec Corp | 半導体装置及びその製造方法 |
JP2003517635A (ja) * | 1999-12-14 | 2003-05-27 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 標準的なcmos回路と共に集積された導波路構造体およびその製造方法 |
JP2006525677A (ja) * | 2003-04-21 | 2006-11-09 | シオプティカル インコーポレーテッド | シリコン・ベースの光デバイスの電子デバイスとのcmos互換集積化 |
JP2005123513A (ja) * | 2003-10-20 | 2005-05-12 | Nippon Telegr & Teleph Corp <Ntt> | 光検出器 |
JP2007535174A (ja) * | 2004-04-26 | 2007-11-29 | バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド | 光学照射を用いた接合形成装置及び方法 |
JP2006133723A (ja) * | 2004-10-08 | 2006-05-25 | Sony Corp | 光導波モジュール及び光・電気複合デバイス、並びにこれらの製造方法 |
JP2009058888A (ja) * | 2007-09-03 | 2009-03-19 | Sony Corp | 半導体装置およびその製造方法ならびに実装基板 |
WO2010004850A1 (ja) * | 2008-07-07 | 2010-01-14 | 日本電気株式会社 | 光配線構造 |
WO2010028355A1 (en) * | 2008-09-08 | 2010-03-11 | Luxtera, Inc. | Monolithic integration of photonics and electronics in cmos processes |
JP2012513118A (ja) * | 2008-12-18 | 2012-06-07 | マイクロン テクノロジー, インク. | キャパシタレスメモリセルを論理素子と集積化するための方法および構造 |
EP2200084A1 (en) * | 2008-12-22 | 2010-06-23 | S.O.I. TEC Silicon | Method of fabricating a back-illuminated image sensor |
JP2010278175A (ja) * | 2009-05-28 | 2010-12-09 | Sony Corp | 半導体装置の製造方法 |
WO2012008272A1 (ja) * | 2010-07-16 | 2012-01-19 | 日本電気株式会社 | 受光素子及びそれを備えた光通信デバイス、並びに受光素子の製造方法及び光通信デバイスの製造方法 |
JP2012053399A (ja) * | 2010-09-03 | 2012-03-15 | Toshiba Corp | 光変調素子 |
JP2012134460A (ja) * | 2010-12-03 | 2012-07-12 | Toshiba Corp | 半導体装置の製造方法 |
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JP6154903B2 (ja) | 2017-06-28 |
KR101742407B1 (ko) | 2017-05-31 |
WO2014035679A1 (en) | 2014-03-06 |
EP2891180B1 (en) | 2019-03-13 |
TW201417247A (zh) | 2014-05-01 |
US20150198775A1 (en) | 2015-07-16 |
US20200348472A1 (en) | 2020-11-05 |
US11886019B2 (en) | 2024-01-30 |
TWI520313B (zh) | 2016-02-01 |
SG11201500915SA (en) | 2015-05-28 |
CN104769716B (zh) | 2018-03-09 |
US10094988B2 (en) | 2018-10-09 |
KR20150046188A (ko) | 2015-04-29 |
EP2891180A1 (en) | 2015-07-08 |
CN104769716A (zh) | 2015-07-08 |
US20220381976A1 (en) | 2022-12-01 |
US11402590B2 (en) | 2022-08-02 |
US20180299626A1 (en) | 2018-10-18 |
US10761275B2 (en) | 2020-09-01 |
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