SG11201500915SA - Method of forming photonics structures - Google Patents

Method of forming photonics structures

Info

Publication number
SG11201500915SA
SG11201500915SA SG11201500915SA SG11201500915SA SG11201500915SA SG 11201500915S A SG11201500915S A SG 11201500915SA SG 11201500915S A SG11201500915S A SG 11201500915SA SG 11201500915S A SG11201500915S A SG 11201500915SA SG 11201500915S A SG11201500915S A SG 11201500915SA
Authority
SG
Singapore
Prior art keywords
forming
photonics structures
photonics
structures
forming photonics
Prior art date
Application number
SG11201500915SA
Inventor
Gurtej Sandhu
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11201500915SA publication Critical patent/SG11201500915SA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004Combinations of two or more optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02327Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864Annealing
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035Materials
    • G02B2006/12061Silicon
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/12142Modulator
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166Manufacturing methods
    • G02B2006/12169Annealing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
SG11201500915SA 2012-08-31 2013-08-15 Method of forming photonics structures SG11201500915SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/600,779 US10094988B2 (en) 2012-08-31 2012-08-31 Method of forming photonics structures
PCT/US2013/055135 WO2014035679A1 (en) 2012-08-31 2013-08-15 Method of forming photonics structures

Publications (1)

Publication Number Publication Date
SG11201500915SA true SG11201500915SA (en) 2015-05-28

Family

ID=49035945

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201500915SA SG11201500915SA (en) 2012-08-31 2013-08-15 Method of forming photonics structures

Country Status (8)

Country Link
US (4) US10094988B2 (en)
EP (1) EP2891180B1 (en)
JP (1) JP6154903B2 (en)
KR (1) KR101742407B1 (en)
CN (1) CN104769716B (en)
SG (1) SG11201500915SA (en)
TW (1) TWI520313B (en)
WO (1) WO2014035679A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10094988B2 (en) 2012-08-31 2018-10-09 Micron Technology, Inc. Method of forming photonics structures
CN106159036A (en) * 2015-04-13 2016-11-23 中兴通讯股份有限公司 A kind of preparation method of silicon based opto-electronics subsystem
US9874693B2 (en) 2015-06-10 2018-01-23 The Research Foundation For The State University Of New York Method and structure for integrating photonics with CMOs
JP6533131B2 (en) * 2015-09-04 2019-06-19 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method
JP6545608B2 (en) * 2015-11-30 2019-07-17 ルネサスエレクトロニクス株式会社 Semiconductor device and method of manufacturing the same
US10431670B2 (en) * 2016-12-15 2019-10-01 Taiwan Semiconductor Manufacturing Co., Ltd Source and drain formation technique for fin-like field effect transistor
US11295962B2 (en) 2018-07-10 2022-04-05 The Board Of Trustees Of The Leland Stanford Junior University Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors
US10649140B1 (en) * 2019-03-04 2020-05-12 Globalfoundries Inc. Back-end-of-line blocking structures arranged over a waveguide core
US11906351B1 (en) * 2019-09-25 2024-02-20 National Technology & Engineering Solutions Of Sandia, Llc Monolithic integration of optical waveguides with metal routing layers
US20240203742A1 (en) * 2022-12-14 2024-06-20 Applied Materials, Inc. Contact layer formation with microwave annealing for nmos devices

Family Cites Families (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US200084A (en) * 1878-02-05 Improvement in bee-hives
KR960008503B1 (en) * 1991-10-04 1996-06-26 Semiconductor Energy Lab Kk Manufacturing method of semiconductor device
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US5304509A (en) * 1992-08-24 1994-04-19 Midwest Research Institute Back-side hydrogenation technique for defect passivation in silicon solar cells
JP2988353B2 (en) 1995-03-13 1999-12-13 日本電気株式会社 Semiconductor device for photodetection and method of manufacturing the same
US6018187A (en) * 1998-10-19 2000-01-25 Hewlett-Packard Cmpany Elevated pin diode active pixel sensor including a unique interconnection structure
EP1158581B1 (en) * 1999-10-14 2016-04-27 Shin-Etsu Handotai Co., Ltd. Method for producing soi wafer
US6387720B1 (en) 1999-12-14 2002-05-14 Phillips Electronics North America Corporation Waveguide structures integrated with standard CMOS circuitry and methods for making the same
GB0002775D0 (en) * 2000-02-07 2000-03-29 Univ Glasgow Improved integrated optical devices
US6677655B2 (en) * 2000-08-04 2004-01-13 Amberwave Systems Corporation Silicon wafer with embedded optoelectronic material for monolithic OEIC
US6472243B2 (en) * 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor
US7038242B2 (en) * 2001-02-28 2006-05-02 Agilent Technologies, Inc. Amorphous semiconductor open base phototransistor array
US20030021515A1 (en) * 2001-07-25 2003-01-30 Motorola, Inc. Semiconductor structure employing a multi-path wave guide to concurrently route signals
JP4555568B2 (en) * 2001-11-09 2010-10-06 株式会社半導体エネルギー研究所 Laser processing apparatus, laser processing method, and method for manufacturing thin film transistor
US6861341B2 (en) * 2002-02-22 2005-03-01 Xerox Corporation Systems and methods for integration of heterogeneous circuit devices
JP2003287636A (en) * 2002-03-28 2003-10-10 Nec Corp Optical function device and method for manufacturing the same
US7110629B2 (en) * 2002-07-22 2006-09-19 Applied Materials, Inc. Optical ready substrates
US7043106B2 (en) * 2002-07-22 2006-05-09 Applied Materials, Inc. Optical ready wafers
US20040062465A1 (en) * 2002-10-01 2004-04-01 Woodley Bruce Robert Apparatus and method for measuring optical power as a function of wavelength
US6935792B2 (en) * 2002-10-21 2005-08-30 General Electric Company Optoelectronic package and fabrication method
US6995407B2 (en) * 2002-10-25 2006-02-07 The University Of Connecticut Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices
JP2004186495A (en) * 2002-12-04 2004-07-02 Toshiba Corp Semiconductor device, method and arrangement for manufacturing the same
WO2004095112A2 (en) 2003-04-21 2004-11-04 Sioptical, Inc. Cmos-compatible integration of silicon-based optical devices with electronic devices
US20040235281A1 (en) 2003-04-25 2004-11-25 Downey Daniel F. Apparatus and methods for junction formation using optical illumination
WO2004097486A1 (en) * 2003-04-29 2004-11-11 Pirelli & C. S.P.A. Coupling structure for optical fibres and process for making it
US7262117B1 (en) * 2003-06-10 2007-08-28 Luxtera, Inc. Germanium integrated CMOS wafer and method for manufacturing the same
JP2005123513A (en) 2003-10-20 2005-05-12 Nippon Telegr & Teleph Corp <Ntt> Photodetector
EP1688770B1 (en) * 2003-11-27 2012-11-14 Ibiden Co., Ltd. Ic chip mounting board, substrate for mother board, device for optical communication, method for manufacturing substrate for mounting ic chip thereon, and method for manufacturing substrate for mother board
US7292745B2 (en) * 2004-01-13 2007-11-06 Franklin W. Dabby System for and method of manufacturing optical/electronic integrated circuits
US9813152B2 (en) 2004-01-14 2017-11-07 Luxtera, Inc. Method and system for optoelectronics transceivers integrated on a CMOS chip
US7385167B2 (en) 2004-07-19 2008-06-10 Micron Technology, Inc. CMOS front end process compatible low stress light shield
JP2006133723A (en) 2004-10-08 2006-05-25 Sony Corp Light guide module and optoelectric hybrid device, and their manufacturing method
US7098070B2 (en) * 2004-11-16 2006-08-29 International Business Machines Corporation Device and method for fabricating double-sided SOI wafer scale package with through via connections
KR100610016B1 (en) * 2004-11-18 2006-08-08 삼성전자주식회사 activation apparatus of impurity atom for semiconductor device manufacturing and activation method thereof
US8294078B2 (en) * 2005-06-24 2012-10-23 The Board Of Trustees Of The University Of Illinois Optically-triggered multi-stage power system and devices
KR100621776B1 (en) 2005-07-05 2006-09-08 삼성전자주식회사 Method of manufacturing a semiconductor device using slective epitaxial growth
US8110823B2 (en) 2006-01-20 2012-02-07 The Regents Of The University Of California III-V photonic integration on silicon
US7515793B2 (en) * 2006-02-15 2009-04-07 International Business Machines Corporation Waveguide photodetector
US7613369B2 (en) * 2006-04-13 2009-11-03 Luxtera, Inc. Design of CMOS integrated germanium photodiodes
US7574090B2 (en) * 2006-05-12 2009-08-11 Toshiba America Electronic Components, Inc. Semiconductor device using buried oxide layer as optical wave guides
US7670927B2 (en) * 2006-05-16 2010-03-02 International Business Machines Corporation Double-sided integrated circuit chips
US7679157B2 (en) * 2006-08-21 2010-03-16 Powerchip Semiconductor Corp. Image sensor and fabrication method thereof
JP2008066410A (en) 2006-09-05 2008-03-21 Sony Corp Solid-state image sensing device, its manufacturing method, semiconductor device, and its manufacturing method
WO2008063939A2 (en) * 2006-11-13 2008-05-29 Syngenta Participations Ag Pest detector
US7666723B2 (en) * 2007-02-22 2010-02-23 International Business Machines Corporation Methods of forming wiring to transistor and related transistor
US7781306B2 (en) * 2007-06-20 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor substrate and method for manufacturing the same
JP4486985B2 (en) * 2007-08-06 2010-06-23 シャープ株式会社 Solid-state imaging device and electronic information device
JP2009058888A (en) 2007-09-03 2009-03-19 Sony Corp Semiconductor device, manufacturing method therefor, and mounting substrate
JP5117156B2 (en) * 2007-10-05 2013-01-09 株式会社日立製作所 Semiconductor device
WO2009055778A1 (en) * 2007-10-25 2009-04-30 Bae Systems Information And Electronic Systems Integration Inc. Method for manufacturing lateral germanium detectors
US7811844B2 (en) * 2007-10-26 2010-10-12 Bae Systems Information And Electronic Systems Integration Inc. Method for fabricating electronic and photonic devices on a semiconductor substrate
WO2009058470A1 (en) * 2007-10-30 2009-05-07 Bae Systems Information And Electronic Systems Integration Inc. Method for fabricating butt-coupled electro-absorptive modulators
JP5248995B2 (en) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 Method for manufacturing photoelectric conversion device
KR100898471B1 (en) 2007-12-28 2009-05-21 주식회사 동부하이텍 Image sensor and method for manufacturing thereof
JP2009164158A (en) * 2007-12-28 2009-07-23 Panasonic Corp Semiconductor device and its fabrication process
US7838955B2 (en) * 2007-12-28 2010-11-23 Dongbu Hitek Co., Ltd. Image sensor and method for manufacturing the same
US20090188557A1 (en) * 2008-01-30 2009-07-30 Shih-Yuan Wang Photonic Device And Method Of Making Same Using Nanowire Bramble Layer
US7901974B2 (en) * 2008-02-08 2011-03-08 Omnivision Technologies, Inc. Masked laser anneal during fabrication of backside illuminated image sensors
KR100962610B1 (en) * 2008-03-17 2010-06-11 주식회사 티지솔라 Heat Treatment Method
WO2010004850A1 (en) 2008-07-07 2010-01-14 日本電気株式会社 Optical interconnection structure
EP2151856A1 (en) * 2008-08-06 2010-02-10 S.O.I. TEC Silicon Relaxation of strained layers
US8877616B2 (en) * 2008-09-08 2014-11-04 Luxtera, Inc. Method and system for monolithic integration of photonics and electronics in CMOS processes
US7985617B2 (en) 2008-09-11 2011-07-26 Micron Technology, Inc. Methods utilizing microwave radiation during formation of semiconductor constructions
WO2010045339A2 (en) * 2008-10-14 2010-04-22 Cornell University Apparatus for imparting phase shift to input waveform
US8228409B2 (en) * 2008-10-24 2012-07-24 Dongbu Hitek Co., Ltd. Image sensor and method for manufacturing the same
US8088667B2 (en) * 2008-11-05 2012-01-03 Teledyne Scientific & Imaging, Llc Method of fabricating vertical capacitors in through-substrate vias
US7838337B2 (en) * 2008-12-01 2010-11-23 Stats Chippac, Ltd. Semiconductor device and method of forming an interposer package with through silicon vias
US7847353B2 (en) * 2008-12-05 2010-12-07 Bae Systems Information And Electronic Systems Integration Inc. Multi-thickness semiconductor with fully depleted devices and photonic integration
US7952096B2 (en) * 2008-12-08 2011-05-31 Omnivision Technologies, Inc. CMOS image sensor with improved backside surface treatment
US8278167B2 (en) * 2008-12-18 2012-10-02 Micron Technology, Inc. Method and structure for integrating capacitor-less memory cell with logic
EP2200084A1 (en) 2008-12-22 2010-06-23 S.O.I. TEC Silicon Method of fabricating a back-illuminated image sensor
US7927975B2 (en) * 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
US8531565B2 (en) * 2009-02-24 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Front side implanted guard ring structure for backside illuminated image sensor
US9142586B2 (en) * 2009-02-24 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for backside illuminated image sensor
JP5365345B2 (en) 2009-05-28 2013-12-11 ソニー株式会社 Manufacturing method of semiconductor device
US9305779B2 (en) * 2009-08-11 2016-04-05 Bae Systems Information And Electronic Systems Integration Inc. Method for growing germanium epitaxial films
JP2011071482A (en) * 2009-08-28 2011-04-07 Fujifilm Corp Solid-state imaging device, process of making the same, digital still camera, digital video camera, mobile phone, and endoscope
US8121446B2 (en) * 2009-09-24 2012-02-21 Oracle America, Inc. Macro-chip including a surface-normal device
DE102009047873B4 (en) * 2009-09-30 2018-02-01 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Optical signal exchange in a semiconductor device using monolithic optoelectronic components
US8450804B2 (en) * 2011-03-06 2013-05-28 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US8257995B2 (en) * 2009-12-11 2012-09-04 Twin Creeks Technologies, Inc. Microwave anneal of a thin lamina for use in a photovoltaic cell
CN102812562B (en) * 2010-01-25 2016-02-24 Lg化学株式会社 Photovoltaic module
EP2539979B1 (en) * 2010-02-24 2018-05-23 Universiteit Gent Laser light coupling into SOI CMOS photonic integrated circuit
JP2012008272A (en) 2010-06-23 2012-01-12 Olympus Imaging Corp Waterproof equipment
US8399292B2 (en) * 2010-06-30 2013-03-19 International Business Machines Corporation Fabricating a semiconductor chip with backside optical vias
WO2012008272A1 (en) 2010-07-16 2012-01-19 日本電気株式会社 Light-receiving element, optical communication device equipped with same, process for production of light-receiving element, and process for production of optical communication device
US8901613B2 (en) * 2011-03-06 2014-12-02 Monolithic 3D Inc. Semiconductor device and structure for heat removal
CN102135649B (en) * 2010-08-04 2012-04-18 华为技术有限公司 Manufacturing method of optical module and optical module
US20120034769A1 (en) * 2010-08-05 2012-02-09 Purtell Robert J Low temperature microwave activation of heavy body implants
JP5300807B2 (en) 2010-09-03 2013-09-25 株式会社東芝 Light modulation element
CN102446741B (en) * 2010-10-07 2016-01-20 株式会社日立国际电气 Method, semi-conductor device manufacturing method, lining processor and semiconductor device
US8796728B2 (en) * 2010-10-25 2014-08-05 The Board Of Trustees Of The University Of Illinois Photonically-activated single-bias fast-switching integrated thyristor
US8633067B2 (en) * 2010-11-22 2014-01-21 International Business Machines Corporation Fabricating photonics devices fully integrated into a CMOS manufacturing process
WO2012073583A1 (en) 2010-12-03 2012-06-07 Kabushiki Kaisha Toshiba Method of forming an inpurity implantation layer
US8513037B2 (en) * 2010-12-03 2013-08-20 Bae Systems Information And Electronic Systems Integration Inc. Method of integrating slotted waveguide into CMOS process
US8818144B2 (en) * 2011-01-25 2014-08-26 Tyco Electronics Corporation Process for preparing an optical interposer for waveguides
US9146349B2 (en) * 2011-03-31 2015-09-29 Alcatel Lucent Monolithic integration of dielectric waveguides and germanium-based devices
JP5742947B2 (en) * 2011-09-09 2015-07-01 日本電気株式会社 Receiver module
US9293641B2 (en) * 2011-11-18 2016-03-22 Invensas Corporation Inverted optical device
WO2013133794A1 (en) * 2012-03-05 2013-09-12 Intel Corporation Optical coupling techniques and configurations between dies
US9691869B2 (en) * 2012-04-09 2017-06-27 Monolithic 3D Inc. Semiconductor devices and structures
US9971088B2 (en) * 2012-04-16 2018-05-15 Hewlett Packard Enterprise Development Lp Integrated optical sub-assembly
US9709740B2 (en) * 2012-06-04 2017-07-18 Micron Technology, Inc. Method and structure providing optical isolation of a waveguide on a silicon-on-insulator substrate
US10094988B2 (en) 2012-08-31 2018-10-09 Micron Technology, Inc. Method of forming photonics structures
GB2507512A (en) * 2012-10-31 2014-05-07 Ibm Semiconductor device with epitaxially grown active layer adjacent a subsequently grown optically passive region
US8796747B2 (en) * 2013-01-08 2014-08-05 International Business Machines Corporation Photonics device and CMOS device having a common gate
KR101691851B1 (en) * 2013-03-11 2017-01-02 인텔 코포레이션 Low voltage avalanche photodiode with re-entrant mirror for silicon based photonic integrated circuits
US9323008B2 (en) * 2014-03-25 2016-04-26 Globalfoundries Inc. Optoelectronic structures having multi-level optical waveguides and methods of forming the structures
US9326373B2 (en) * 2014-04-09 2016-04-26 Finisar Corporation Aluminum nitride substrate
US9276160B2 (en) * 2014-05-27 2016-03-01 Opel Solar, Inc. Power semiconductor device formed from a vertical thyristor epitaxial layer structure
US9768330B2 (en) * 2014-08-25 2017-09-19 Micron Technology, Inc. Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions
US9395489B2 (en) * 2014-10-08 2016-07-19 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material
US9423563B2 (en) * 2014-10-20 2016-08-23 International Business Machines Corporation Variable buried oxide thickness for a waveguide

Also Published As

Publication number Publication date
US11886019B2 (en) 2024-01-30
KR20150046188A (en) 2015-04-29
US20220381976A1 (en) 2022-12-01
US20200348472A1 (en) 2020-11-05
US11402590B2 (en) 2022-08-02
TWI520313B (en) 2016-02-01
US10761275B2 (en) 2020-09-01
KR101742407B1 (en) 2017-05-31
CN104769716B (en) 2018-03-09
US20180299626A1 (en) 2018-10-18
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WO2014035679A1 (en) 2014-03-06
EP2891180B1 (en) 2019-03-13
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US10094988B2 (en) 2018-10-09
US20150198775A1 (en) 2015-07-16
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