JP2015532016A - ラジカルの化学的性質の複数の流れ経路を使用した調節及び制御 - Google Patents
ラジカルの化学的性質の複数の流れ経路を使用した調節及び制御 Download PDFInfo
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Abstract
Description
本出願は、「ラジカル化学的性質の複数の流れ経路を使用した調節及び制御」と題した2012年9月21日出願の米国仮特許出願第61/704,241号の利益を主張する。この米国仮特許出願の全開示内容は、参照により本明細書に援用される。
Claims (20)
- 半導体処理のためのシステムであって、
チャンバの処理領域に半導体基板を収納するように構成された前記チャンバと、
前記チャンバの第1のアクセスに流動的に結合され、前記第1のアクセスを介して前記チャンバの中へ第1の前駆体を送るように構成された第1の遠隔プラズマシステムと、
前記チャンバの第2のアクセスに流動的に結合され、前記第2のアクセスを介して前記チャンバの中へ第2の前駆体を送るように構成された第2の遠隔プラズマシステムと
を備えるシステム。 - 前記システムが、前記第1の前駆体と前記第2の前駆体が前記チャンバの前記処理領域へ送られるまで、前記第1の前駆体と前記第2の前駆体を互いに流動的に分離された状態に維持するように構成されている、請求項1に記載のシステム。
- 前記第1のアクセスが、前記チャンバの最上部の近く、又は前記チャンバの最上部に位置づけされており、前記第2のアクセスが前記チャンバの側面部の近く、又は前記チャンバの側面部に位置づけされている、請求項1に記載のシステム。
- 前記チャンバ内部の前記処理領域の最上部、又は前記処理領域の上に位置づけされ、前記第1の前駆体と前記第2の前駆体の両方を前記チャンバの前記処理領域の中へ送るように構成されたガス分配アセンブリをさらに備える、請求項1に記載のシステム。
- 前記ガス分配アセンブリは上方プレートと下方プレートとを備え、前記上方プレートと前記下方プレートは互いに結合されて、前記プレート間の容積を画定し、前記プレートの結合は、前記上方プレートと前記下方プレートとを通る第1の流体チャネルと、前記容積から前記下方プレートを通る流体のアクセスを提供するように構成された、前記下方プレートを通る第2の流体チャネルと、を提供し、前記第1の流体チャネルは、前記プレート間の容積と前記第2の流体チャネルとから流動的に分離されている、請求項4に記載のシステム。
- 前記容積は、前記チャンバの前記第2のアクセスに流動的に結合された前記ガス分配アセンブリの側面を介して流動的にアクセス可能である、請求項5に記載のシステム。
- 前記チャンバは、前記第1の遠隔プラズマシステムから前記チャンバの前記第1のアクセスを介して、また前記ガス分配アセンブリの前記第1の流体チャネルを介して、前記チャンバの前記処理領域の中へ第1の前駆体を供給するように構成されている、請求項6に記載のシステム。
- 前記チャンバは、前記第2の前駆体を、前記第2の遠隔プラズマシステムから前記チャンバの前記第2のアクセスを介して前記チャンバの中へ、前記上方プレートと前記下方プレートとの間に画定された前記容積の中へ、そして前記ガス分配アセンブリの前記第2の流体チャネルを介して前記チャンバの前記処理領域の中へ供給するように構成されている、請求項6に記載のシステム。
- 前記ガス分配アセンブリは、前記ガス分配アセンブリの前記上方プレートを通る前記第2の前駆体の流れを防止するように構成される、請求項7に記載のシステム。
- 前記第1の遠隔プラズマシステムは第1の材料を含み、前記第2の遠隔プラズマシステムは第2の材料を含む、請求項1に記載のシステム。
- 前記第1の材料は、前記第1の前駆体の組成に基づいて選択される、請求項10に記載のシステム。
- 前記第2の材料は、前記第2の前駆体の組成に基づいて選択される、請求項11に記載のシステム。
- 前記第1の材料と、前記第2の材料は異なる材料である、請求項12に記載のシステム。
- 前記第1の遠隔プラズマシステムと、前記第2の遠隔プラズマシステムは、高周波プラズマユニット、容量結合プラズマユニット、誘導結合プラズマユニット、マイクロ波プラズマユニット、及びトロイダルプラズマユニットから成る群から選択される、請求項1に記載のシステム。
- 前記第1の遠隔プラズマシステムと、前記第2の遠隔プラズマシステムは、約10W〜10kW以上の電力レベルで作動するように構成されている、請求項1に記載のシステム。
- 前記第1の遠隔プラズマシステムは、前記第1の前駆体の組成に基づいて選択された第1の電力レベルで作動するように構成されている、請求項15に記載のシステム。
- 前記第2の遠隔プラズマシステムは、前記第2の前駆体の組成に基づいて選択された第2の電力レベルで作動するように構成されている、請求項16に記載のシステム。
- 前記システムは、互いに異なる電力レベルで第1の遠隔プラズマユニットと、前記第2の遠隔プラズマユニットとを作動させるように構成されている、請求項17に記載のシステム。
- 半導体処理チャンバの作動方法であって、
第1の前駆体を第1の遠隔プラズマシステムを介して半導体処理チャンバの中へ流すことと、
第2の前駆体を第2の遠隔プラズマシステムを介して半導体処理チャンバの中へ流すこと
とを含み、前記第1の前駆体と、前記第2の前駆体は、前記処理チャンバの処理領域において混合される、方法。 - 前記第1の前駆体はフッ素含有前駆体を含み、前記第2の前駆体は水素含有前駆体を含む、請求項19に記載の方法。
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Also Published As
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TW201419401A (zh) | 2014-05-16 |
CN104641456A (zh) | 2015-05-20 |
US20140099794A1 (en) | 2014-04-10 |
KR102114002B1 (ko) | 2020-05-22 |
KR20150056839A (ko) | 2015-05-27 |
CN111463125A (zh) | 2020-07-28 |
TWI663646B (zh) | 2019-06-21 |
WO2014046864A1 (en) | 2014-03-27 |
JP6392760B2 (ja) | 2018-09-19 |
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