JP2015109343A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 146
- 239000012212 insulator Substances 0.000 claims abstract description 124
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 97
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 54
- 125000006850 spacer group Chemical group 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 22
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims abstract description 20
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims description 77
- 230000002093 peripheral effect Effects 0.000 claims description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 39
- 230000001681 protective effect Effects 0.000 claims description 34
- 239000001257 hydrogen Substances 0.000 claims description 33
- 229910052739 hydrogen Inorganic materials 0.000 claims description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 31
- 229910021332 silicide Inorganic materials 0.000 claims description 30
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
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- 230000005669 field effect Effects 0.000 claims description 12
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- 239000010410 layer Substances 0.000 description 214
- 235000012239 silicon dioxide Nutrition 0.000 description 39
- 239000000377 silicon dioxide Substances 0.000 description 39
- 230000015572 biosynthetic process Effects 0.000 description 21
- 239000003990 capacitor Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
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- 238000003384 imaging method Methods 0.000 description 7
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- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 description 3
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 150000002736 metal compounds Chemical class 0.000 description 3
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
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- 239000010937 tungsten Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- 239000005368 silicate glass Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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Abstract
Description
また、後述する水素アニール処理において第二窒化シリコン層222は水素を透過する水素透過膜としても機能する。そのため、ノイズ特性のすぐれたMOSFETを製造することが可能となる。なお、第二窒化シリコン層222の下に配置された第二酸化シリコン層221は水素を通しやすく、第一導電型(n型)および第二導電型(p型)のMOSFETに対する水素供給を阻害しにくい。
122 ゲート電極
210 第一絶縁体膜
211 第一酸化シリコン層
212 第一窒化シリコン層
213 酸化シリコン層
214 窒化シリコン層
215 サイドウォールスペーサ
220 第二絶縁体膜
221 第二酸化シリコン層
222 第二窒化シリコン層
Claims (17)
- 絶縁ゲート型電界効果トランジスタを備える半導体装置の製造方法であって、
シリコン基板の上に設けられた前記トランジスタのゲート電極の上面および側面と前記トランジスタのソース・ドレイン領域とを覆う第一絶縁体膜を形成し、前記第一絶縁体膜をエッチングすることで前記ゲート電極の前記側面を覆うサイドウォールスペーサを形成する第一工程と、
前記ゲート電極の前記上面と前記サイドウォールスペーサと前記ソース・ドレイン領域とを覆う、酸化シリコン層と窒化シリコン層の積層膜である第二絶縁体膜を形成する第二工程と、を有し、
前記第二工程は、前記第二絶縁体膜の前記酸化シリコン層を前記サイドウォールスペーサに接するように熱CVD法により形成する段階と、前記第二絶縁体膜の前記窒化シリコン層を前記第二絶縁体膜の前記酸化シリコン層に接するようにプラズマCVD法により形成する段階とを含むことを特徴とする半導体装置の製造方法。 - 前記熱CVD法は、プロセスガスの圧力が200Pa以上600Pa以下の範囲で行う、請求項1に記載の半導体装置の製造方法。
- 前記第二工程では、前記サイドウォールスペーサと前記シリコン基板との間に存在する隙間を前記第二絶縁体膜の前記酸化シリコン層で埋めるように前記第二絶縁体膜の前記酸化シリコン層を形成する、請求項1または2に記載の半導体装置の製造方法。
- 前記シリコン基板には、前記トランジスタを有する周辺回路部と、光電変換素子を有する画素回路部とが設けられており、
前記第一工程では、前記光電変換素子の受光領域を覆うように前記第一絶縁体膜を形成し、前記第一絶縁体膜の前記受光領域の上に位置する部分を残存させつつ前記サイドウォールスペーサを形成する、請求項1乃至3のいずれか1項に記載の半導体装置の製造方法。 - 前記画素回路部は、前記光電変換素子で生じた電荷の量に基づく信号を生成する増幅素子を有し、
前記第一工程では、前記増幅素子のチャネル領域を覆うように前記第一絶縁体膜を形成し、前記第一絶縁体膜の前記チャネル領域の上に位置する部分を残存させつつ前記サイドウォールスペーサを形成する、請求項4に記載の半導体装置の製造方法。 - 前記第一工程と前記第二工程との間に、前記ソース・ドレイン領域にシリサイド層を形成する工程を有する、請求項1乃至5のいずれか1項に記載の半導体装置の製造方法。
- 前記ソース・ドレイン領域を覆う保護膜を形成し、前記保護膜の前記ソース・ドレイン領域とは別の領域の上に位置する部分を残存させつつ、前記保護膜の前記ソース・ドレイン領域の上に位置する部分をエッチングにより除去する段階と、
前記ソース・ドレイン領域および前記保護膜の前記別の領域の上に残存させた前記部分を覆う金属膜を形成し、前記金属膜と前記ソース・ドレイン領域とを反応させることで前記シリサイド層を形成する段階とを含む、請求項6に記載の半導体装置の製造方法。 - 前記第一工程の前に、前記ソース・ドレイン領域に不純物領域を形成し、前記第一工程と前記第二工程の間であって前記シリサイド層を形成する前に、前記ソース・ドレイン領域および前記別の領域に、前記不純物領域よりも不純物濃度が高い不純物領域を形成する、請求項7に記載の半導体装置の製造方法。
- 前記別の領域には前記保護膜の下に抵抗素子が位置する、請求項7または8に記載の半導体装置の製造方法。
- 前記第一絶縁体膜は酸化シリコン層と窒化シリコン層の積層膜であり、
前記第一工程は、前記第一絶縁体膜の前記酸化シリコン層を熱CVD法により形成する段階と、前記第一絶縁体膜の前記窒化シリコン層を前記第一絶縁体膜の前記酸化シリコン層に接するように熱CVD法により形成する段階とを含む、請求項1乃至9のいずれか1項に記載の半導体装置の製造方法。 - 前記第二絶縁体膜の前記酸化シリコン層を形成する段階における熱CVD法のプロセスガスの圧力は、前記第一絶縁体膜の前記酸化シリコン層を形成する段階における熱CVD法のプロセスガスの圧力よりも高い、請求項10に記載の半導体装置の製造方法。
- 前記第二絶縁体膜を貫通して前記ソース・ドレイン領域に接続する導電体部材を形成する第三工程と、を備える、請求項1乃至11のいずれか1項に記載の半導体装置の製造方法。
- 前記第三工程は、前記第二絶縁体膜および前記第二絶縁体膜を覆う第三絶縁体膜に、前記ソース・ドレイン領域の上に位置するコンタクトホールを形成する段階を含み、前記第三絶縁体膜に前記コンタクトホールを形成する際に、前記第二絶縁体膜をエッチングストッパとして用いる、請求項12に記載の半導体装置の製造方法。
- 前記第三絶縁体膜を平坦化する段階を有する、請求項13に記載の半導体装置の製造方法。
- 前記シリコン基板の上には、前記トランジスタを有する周辺回路部と、光電変換素子および前記光電変換素子をリセットするリセット素子を有する画素回路部とが設けられており、
前記リセット素子は前記第一絶縁体膜で覆われており、
前記第二絶縁体膜の前記窒化シリコン層の前記リセット素子の上に位置する部分を除去する段階と、
前記第一絶縁体膜および前記第三絶縁体膜に、前記リセット素子の不純物領域の上に位置するコンタクトホールを形成する段階と、を含み、
前記リセット素子の前記不純物領域の上の前記コンタクトホールを形成する際に、前記第一絶縁体膜をエッチングストッパとして用いる、請求項13または14に記載の半導体装置の製造方法。 - 前記リセット素子の前記不純物領域の上に位置する前記コンタクトホールと、前記ソース・ドレイン領域の上に位置する前記コンタクトホールとを異なるタイミングで形成する、請求項15に記載の半導体装置の製造方法。
- 前記第二工程の後に、前記トランジスタが前記第二絶縁体膜で覆われた状態で、水素雰囲気中にて前記シリコン基板を加熱する工程を有する、請求項1乃至16のいずれか1項に記載の半導体装置の製造方法。
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