JP2015041719A - ワイドバンドギャップ絶縁ゲート型半導体装置 - Google Patents
ワイドバンドギャップ絶縁ゲート型半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000009413 insulation Methods 0.000 title abstract 4
- 239000010410 layer Substances 0.000 claims abstract description 66
- 239000012535 impurity Substances 0.000 claims abstract description 22
- 239000002344 surface layer Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 25
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 21
- 239000012212 insulator Substances 0.000 abstract 1
- 230000000116 mitigating effect Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 16
- 230000000694 effects Effects 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Abstract
Description
2. n-ドリフト層
2a. JFET領域
3. pチャネル領域
4. p+ベース領域
5. n+ソース領域
6. p+コンタクト領域
7. ゲート絶縁膜
8. Poly−Siゲート電極
9. ソース電極
10. ドレイン電極
11. p+基板、コレクタ層
12. n型バッファー層、フィールドストップ層
13. 層間絶縁膜
14. フローティングp+領域
20、 第1トレンチ
21、 第2トレンチ
X1−X2 切断線
X3−X4 切断線
X5−X6 切断線
Z1−Z2 切断線
w1 p+ベース領域とフローティングp+領域の間隔
w2 p+ベース領域とフローティングp+領域の間隔
Claims (8)
- シリコンよりワイドバンドギャップからなる半導体基板を主要基板とし、該半導体基板が低不純物濃度の第1導電型ドリフト層と、該ドリフト層の表層に選択的に複数設けられる第2導電型チャネル領域と、前記チャネル領域内の表層にそれぞれ選択的に設けられる高不純物濃度第1導電型半導体領域とを備え、前記チャネル領域の下側に接する高不純物濃度第2導電型ベース領域と、前記複数のチャネル領域と前記ベース領域の側面に主面に沿う方向に挟まれる凸型ドリフト層部分の表面と該表面に並ぶ前記チャネル領域の表面とにゲート絶縁膜を介して形成されるゲート電極と、前記チャネル領域と前記半導体領域の表面に共通に接する第1主電極を備え、前記凸型ドリフト層部分内に、前記ベース領域の側面で主面に沿う方向に間隔を置いて平行に対向する側面を有する高不純物濃度の第2導電型フローティング領域を備え、該間隔が広い部分と狭い部分を有するように対向する側面に凸部が設けられていることを特徴とするワイドバンドギャップ絶縁ゲート型半導体装置。
- 前記高不純物濃度第2導電型ベース領域と前記高不純物濃度の第2導電型フローティング領域との間の、主面に沿う方向の広い部分と狭い部分の間隔が、前記第2導電型フローティング領域の側面で主面に沿う方向に部分的に伸びる凸部または前記第2導電型ベース領域の第2導電型フローティング領域に対向する側面で主面に沿う方向に部分的に伸びる凸部の少なくともいずれかの凸部を備えることにより形成されることを特徴とする請求項1記載のワイドバンドギャップ絶縁ゲート型半導体装置。
- それぞれ、半導体基板の表面から低不純物濃度第1導電型ドリフト層に達する深さの第1トレンチと第2トレンチを有し、第1トレンチ内にはゲート絶縁膜を介してゲート電極が設けられてトレンチゲート構造とされ、さらに前記第1トレンチの下方に高不純物濃度の第2導電型フローティング領域を有し、該トレンチゲート構造の両側面に沿って配置される第2トレンチ内面には第1電極に接する第2導電型高濃度領域または第1電極が覆うことによりトレンチ第1電極構造にされ、前記第2トレンチの底部に第2導電型ベース領域を備え、該ベース領域と前記第2導電型フローティング領域との主面に沿う方向の間隔が、広い部分と狭い部分とを有する形状で配置される構成を有することを特徴とするワイドバンドギャップ絶縁ゲート型半導体装置。
- 前記2導電型ベース領域が第2トレンチ底部に接し、前記第2導電型フローティング領域が第1トレンチにゲート絶縁膜を介して接することを特徴とする請求項3記載のワイドバンドギャップ絶縁ゲート型半導体装置。
- 前記2導電型ベース領域が第2トレンチ底部に第2導電型チャネル領域を介して接し、前記第2導電型フローティング領域が第1トレンチにゲート絶縁膜とドリフト層を介して接することを特徴とする請求項3記載のワイドバンドギャップ絶縁ゲート型半導体装置。
- 絶縁ゲート型半導体装置がMOSFETであることを特徴とする請求項1乃至5のいずれか一項に記載のワイドバンドギャップ絶縁ゲート型半導体装置。
- 絶縁ゲート型半導体装置がIGBTであることを特徴とする請求項1乃至5のいずれか一項に記載のワイドバンドギャップ絶縁ゲート型半導体装置。
- 前記半導体基板が、炭化珪素半導体、窒化ガリウム半導体、ダイヤモンドのいずれかであることを特徴とする請求項1記載のワイドバンドギャップ絶縁ゲート型半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2013172979A JP6197995B2 (ja) | 2013-08-23 | 2013-08-23 | ワイドバンドギャップ絶縁ゲート型半導体装置 |
US14/463,262 US9093493B2 (en) | 2013-08-23 | 2014-08-19 | Wide bandgap insulated gate semiconductor device |
US14/744,297 US9318547B2 (en) | 2013-08-23 | 2015-06-19 | Wide bandgap insulated gate semiconductor device |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01310576A (ja) * | 1988-06-08 | 1989-12-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2004022693A (ja) * | 2002-06-14 | 2004-01-22 | Toshiba Corp | 半導体装置 |
JP2006332401A (ja) * | 2005-05-27 | 2006-12-07 | National Institute Of Advanced Industrial & Technology | 炭化ケイ素半導体装置 |
WO2011122670A1 (ja) * | 2010-03-30 | 2011-10-06 | ローム株式会社 | 半導体装置 |
JP2012109580A (ja) * | 2003-12-30 | 2012-06-07 | Fairchild Semiconductor Corp | パワー半導体デバイスおよびその製造方法 |
JP2013069940A (ja) * | 2011-09-24 | 2013-04-18 | Toyota Motor Corp | 半導体装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2025237A (en) * | 1934-12-29 | 1935-12-24 | Charles C Harper | Sharpener device |
JP3259485B2 (ja) | 1993-12-03 | 2002-02-25 | 富士電機株式会社 | 炭化けい素たて型mosfet |
EP0966763B1 (en) | 1997-02-07 | 2005-01-12 | James Albert Cooper, Jr. | Structure for increasing the maximum voltage of silicon carbide power transistors |
US6570185B1 (en) | 1997-02-07 | 2003-05-27 | Purdue Research Foundation | Structure to reduce the on-resistance of power transistors |
US6180958B1 (en) | 1997-02-07 | 2001-01-30 | James Albert Cooper, Jr. | Structure for increasing the maximum voltage of silicon carbide power transistors |
JP4564362B2 (ja) | 2004-01-23 | 2010-10-20 | 株式会社東芝 | 半導体装置 |
JP4899405B2 (ja) * | 2004-11-08 | 2012-03-21 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
US8866150B2 (en) * | 2007-05-31 | 2014-10-21 | Cree, Inc. | Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts |
JP5444608B2 (ja) * | 2007-11-07 | 2014-03-19 | 富士電機株式会社 | 半導体装置 |
JP5317560B2 (ja) * | 2008-07-16 | 2013-10-16 | 株式会社東芝 | 電力用半導体装置 |
US8288220B2 (en) * | 2009-03-27 | 2012-10-16 | Cree, Inc. | Methods of forming semiconductor devices including epitaxial layers and related structures |
JP5433352B2 (ja) | 2009-09-09 | 2014-03-05 | 株式会社東芝 | 半導体装置の製造方法 |
US9117739B2 (en) * | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US8415671B2 (en) * | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
US9142662B2 (en) * | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
-
2013
- 2013-08-23 JP JP2013172979A patent/JP6197995B2/ja active Active
-
2014
- 2014-08-19 US US14/463,262 patent/US9093493B2/en active Active
-
2015
- 2015-06-19 US US14/744,297 patent/US9318547B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01310576A (ja) * | 1988-06-08 | 1989-12-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2004022693A (ja) * | 2002-06-14 | 2004-01-22 | Toshiba Corp | 半導体装置 |
JP2012109580A (ja) * | 2003-12-30 | 2012-06-07 | Fairchild Semiconductor Corp | パワー半導体デバイスおよびその製造方法 |
JP2006332401A (ja) * | 2005-05-27 | 2006-12-07 | National Institute Of Advanced Industrial & Technology | 炭化ケイ素半導体装置 |
WO2011122670A1 (ja) * | 2010-03-30 | 2011-10-06 | ローム株式会社 | 半導体装置 |
JP2013069940A (ja) * | 2011-09-24 | 2013-04-18 | Toyota Motor Corp | 半導体装置 |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2017043606A1 (ja) * | 2015-09-09 | 2018-06-28 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
WO2017043606A1 (ja) * | 2015-09-09 | 2017-03-16 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US10453952B2 (en) | 2015-09-09 | 2019-10-22 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
US10424642B2 (en) | 2015-09-09 | 2019-09-24 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device |
JP2020080439A (ja) * | 2016-07-06 | 2020-05-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2018006639A (ja) * | 2016-07-06 | 2018-01-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
US10236339B2 (en) | 2016-09-21 | 2019-03-19 | Kabushiki Kaisha Toshiba | Semiconductor device |
DE102017216930A1 (de) | 2016-09-28 | 2018-03-29 | Toyota Jidosha Kabushiki Kaisha | Halbleitervorrichtung und Verfahren zur Fertigung der Halbleitervorrichtung |
US10050108B2 (en) | 2016-09-28 | 2018-08-14 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
US10283626B2 (en) | 2016-09-28 | 2019-05-07 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and manufacturing method of the same |
DE102017216930B4 (de) | 2016-09-28 | 2019-05-23 | Toyota Jidosha Kabushiki Kaisha | Halbleitervorrichtung und Verfahren zur Fertigung dieser |
DE102017216923B4 (de) | 2016-09-28 | 2022-09-15 | Denso Corporation | Halbleitervorrichtung |
DE102017216923A1 (de) | 2016-09-28 | 2018-03-29 | Toyota Jidosha Kabushiki Kaisha | Halbleitervorrichtung |
KR20180035148A (ko) | 2016-09-28 | 2018-04-05 | 도요타지도샤가부시키가이샤 | 반도체 장치와 그 제조 방법 |
CN109309118A (zh) * | 2017-07-28 | 2019-02-05 | 三垦电气株式会社 | 半导体器件以及制造半导体器件的方法 |
JP7076222B2 (ja) | 2018-02-21 | 2022-05-27 | 三菱電機株式会社 | 半導体装置およびその製造方法、電力変換装置 |
JP2019145671A (ja) * | 2018-02-21 | 2019-08-29 | 三菱電機株式会社 | 半導体装置およびその製造方法、電力変換装置 |
JP2020072214A (ja) * | 2018-11-01 | 2020-05-07 | 富士電機株式会社 | 窒化ガリウム系半導体装置 |
WO2021261397A1 (ja) * | 2020-06-26 | 2021-12-30 | ローム株式会社 | 半導体装置 |
US11398556B2 (en) | 2020-07-09 | 2022-07-26 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, drive device, vehicle, and elevator |
US11495665B2 (en) | 2020-07-09 | 2022-11-08 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, drive device, vehicle, and elevator |
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