JP2014517513A - 低いソース抵抗を有する電界効果トランジスタデバイス - Google Patents
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Abstract
【選択図】図1
Description
本発明は、陸軍研究所によって与えられた契約第DAAD19−01−C−0067号の下で政府支援によって行われたものである。政府は、本発明におけるある一定の権利を有する。
G ゲート端子
Rs 内臓ソース抵抗
S ソース端子
VDS ドレイン・ツー・ソース電圧
Claims (45)
- 第1の導電型を有するドリフト層と、
前記ドリフト層において前記第1の導電型と反対の第2の導電型を有するウェル領域と、
前記ウェル領域において、前記第1の導電型を有して該ウェル領域にチャンネル領域を定め、該チャンネル領域に隣接する横方向ソース領域と該チャンネル領域の反対側で該横方向ソース領域から離れて延びる複数のソース接点領域とを含むソース領域と、
前記複数のソース接点領域のうちの少なくとも2つの間にあり、かつ前記ウェル領域と接触する前記第2の導電型を有する本体接点領域と、
前記ソース接点領域及び前記本体接点領域のうちの少なくとも一方に重なり、かつ前記横方向ソース領域に重ならないソースオーミック接点と、
を含むことを特徴とする半導体デバイス。 - 前記本体接点領域は、前記ソース接点領域間に散在する複数の本体接点領域を含むことを特徴とする請求項1に記載の半導体デバイス。
- 前記複数の本体接点領域は、前記横方向ソース領域によって前記チャンネル領域から離間されることを特徴とする請求項2に記載の半導体デバイス。
- 前記ソースオーミック接点は、ソース接点区域で前記少なくとも1つのソース接点領域に重なり、かつ該ソースオーミック接点は、本体接点領域区域で前記本体接点に重なり、
前記ウェル領域の最小寸法wlに対する前記ソース接点領域区域の最小寸法nlの比が、0.2よりも大きい、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記ウェル領域の前記最小寸法wlに対する前記ソース接点領域区域の前記最小寸法nlの前記比は、0.3と1の間であることを特徴とする請求項4に記載の半導体デバイス。
- 前記ウェル領域の前記最小寸法wlに対する前記ソース接点領域区域の前記最小寸法nlの前記比は、0.5よりも大きいことを特徴とする請求項4に記載の半導体デバイス。
- 前記ソースオーミック接点は、ソース接点区域で前記ソース領域に重なり、かつ該ソースオーミック接点は、本体接点領域区域で前記本体接点領域に重なり、
前記ウェル領域の最小寸法wlに対する前記本体接点領域区域の最小寸法plの比が、0.2よりも大きい、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記ウェル領域の前記最小寸法wlに対する前記本体接点領域区域の前記最小寸法plの前記比は、約0.3よりも大きいことを特徴とする請求項7に記載の半導体デバイス。
- 前記ウェル領域の前記最小寸法wlに対する前記本体接点領域区域の前記最小寸法plの前記比は、約0.5よりも大きいことを特徴とする請求項7に記載の半導体デバイス。
- 前記ドリフト領域は、広バンドギャップ半導体材料を含むことを特徴とする請求項1に記載の半導体デバイス。
- 前記ドリフト領域は、シリコンカーバイドを含むことを特徴とする請求項10に記載の半導体デバイス。
- 前記ドリフト領域は、2H、4H、及び/又は6Hポリタイプを有するシリコンカーバイドを含むことを特徴とする請求項10に記載の半導体デバイス。
- 前記ドリフト領域は、3C及び/又は15Rポリタイプを有するシリコンカーバイドを含むことを特徴とする請求項10に記載の半導体デバイス。
- 前記ソース領域は、シート抵抗を有し、前記ソースオーミック接点は、接触抵抗を有し、
前記シート抵抗に対する前記接触抵抗の比が、1よりも大きい、
ことを特徴とする請求項1に記載の半導体デバイス。 - 1000ボルトを超える逆方向阻止電圧と700アンペア毎平方センチメートルよりも大きい電流密度とを有することを特徴とする請求項1に記載の半導体デバイス。
- 電界効果トランジスタを含むことを特徴とする請求項1に記載の半導体デバイス。
- 絶縁ゲートバイポーラトランジスタを含むことを特徴とする請求項1に記載の半導体デバイス。
- 半導体デバイスのソース接点区域の最小寸法が、前記ソースオーミック接点と前記少なくとも1つのソース接点領域との間の重なりの区域によって定められることを特徴とする請求項1に記載の半導体デバイス。
- 半導体デバイスであって、
第1の導電型を有するドリフト層と、
前記第1の導電型と反対である第2の導電型を有するウェル領域と、
前記ウェル領域において前記第1の導電型を有するソース領域と、
前記ウェル領域に接触して前記第2の導電型を有する本体接点領域と、
ソース接点区域で前記ソース領域に重なり、かつ本体接点領域区域で前記本体接点領域に重なるソースオーミック接点と、
を含み、
前記ウェル領域の最小寸法wlに対する前記ソース接点区域の最小寸法nlの比が、0.2よりも大きい、
ことを特徴とする半導体デバイス。 - 前記ウェル領域の前記最小寸法wlに対する前記ソース接点区域の前記最小寸法nlの前記比は、約0.3よりも大きいことを特徴とする請求項19に半導体デバイス。
- 前記ウェル領域の前記最小寸法wlに対する前記ソース接点領域区域の前記最小寸法nlの前記比は、0.5よりも大きいことを特徴とする請求項19に半導体デバイス。
- 半導体デバイスであって、
第1の導電型を有するドリフト層と、
前記第1の導電型と反対である第2の導電型を有するウェル領域と、
前記ウェル領域において前記第1の導電型を有するソース領域と、
前記ウェル領域に接触して前記第2の導電型を有する本体接点領域と、
ソース接点区域で前記ソース領域に重なり、かつ本体接点領域区域で前記本体接点領域に重なるソースオーミック接点と、
を含み、
前記ウェル領域の最小寸法wlに対する前記本体接点領域区域の最小寸法plの比が、0.2よりも大きい、
ことを特徴とする半導体デバイス。 - 前記ウェル領域の前記最小寸法wlに対する前記本体接点領域区域の前記最小寸法plの前記比は、約0.3よりも大きいことを特徴とする請求項22に記載の半導体デバイス。
- 前記ウェル領域の前記最小寸法wlに対する前記本体接点領域区域の前記最小寸法plの前記比は、約0.5よりも大きいことを特徴とする請求項22に記載の半導体デバイス。
- 1000ボルトを超える逆方向阻止電圧を有し、かつ100アンペアよりも大きい電流で200アンペア毎平方センチメートルよりも大きい電流密度を有する、
ことを特徴とする半導体デバイス。 - 1000ボルト又はそれよりも高い逆方向阻止電圧を有し、かつ5ボルト又はそれ未満の順方向電圧で100アンペアよりも大きい順方向電流機能を有する、
ことを特徴とする半導体デバイス。 - 1200ボルト又はそれよりも高い逆方向阻止電圧を有し、かつ100アンペアよりも大きい順方向電流機能を有する、
ことを特徴とする金属酸化物半導体電界効果トランジスタデバイス。 - 1000ボルト又はそれよりも高い逆方向阻止電圧を有し、かつ8ミリオーム−cm2未満の差動オン抵抗を有する、
ことを特徴とする金属酸化物半導体電界効果トランジスタデバイス。 - 半導体デバイスであって、
シート抵抗を有するソース領域と、
前記ソース領域上で接触抵抗を有するソースオーミック接点と、
を含み、
前記接触抵抗に対する前記シート抵抗の比が、1よりも大きい、
ことを特徴とする半導体デバイス。 - 1000ボルト未満の阻止電圧を有し、かつ5ボルト又はそれ未満の順方向電圧降下で200アンペア毎平方センチメートルよりも大きい電流密度の順方向電流を通過させるように構成される、
ことを特徴とする半導体デバイス。 - 5.2ボルト又はそれ未満の順方向電圧降下及び100アンペア毎平方センチメートルの電流密度で14ミリオーム−cm2未満の固有オン抵抗を有する、
ことを特徴とする絶縁ゲートバイポーラトランジスタデバイス。 - 10kV又はそれよりも高い電圧阻止機能を有することを特徴とする請求項19に記載の絶縁ゲートバイポーラトランジスタデバイス。
- 4ボルト未満であるドレイン・ツー・ソース電圧と20マイクロメートル未満のセルピッチとを有し、かつ100アンペアよりも大きい順方向電流機能を有する、
ことを特徴とする金属酸化物半導体電界効果トランジスタデバイス。 - 前記セルピッチは、10マイクロメートル未満であることを特徴とする請求項33に記載の金属酸化物半導体電界効果トランジスタデバイス。
- 5ボルト未満であるドレイン・ツー・ソース電圧と10μm未満のセルピッチとを有し、かつ80Aよりも大きい順方向電流機能を有する、
ことを特徴とする金属酸化物半導体電界効果トランジスタデバイス。 - 1000ボルトを超える逆方向阻止電圧を有し、かつ100Aよりも大きい電流で200アンペア毎平方センチメートルよりも大きい電流密度を有する、
ことを特徴とする半導体デバイス。 - 1000ボルト又はそれよりも高い逆方向阻止電圧を有し、かつ5ボルト又はそれ未満の順方向電圧で100アンペアよりも大きい順方向電流機能を有することを特徴とする請求項36に記載の半導体デバイス。
- 1200ボルト又はそれよりも高い逆方向阻止電圧を有する金属酸化物半導体電界効果トランジスタデバイスを含むことを特徴とする請求項36に記載の半導体デバイス。
- 1000ボルト又はそれよりも高い逆方向阻止電圧を有し、かつ8ミリオーム−cm2未満の差動オン抵抗を有する、
ことを特徴とする金属酸化物半導体電界効果トランジスタデバイス。 - 1000ボルト未満の阻止電圧を有し、かつ5ボルト又はそれ未満の順方向電圧降下で200アンペア毎平方センチメートルよりも大きい電流密度の順方向電流を通過させるように構成される、
ことを特徴とする半導体デバイス。 - 100アンペア毎平方センチメートルの電流密度で5.2ボルト又はそれ未満の順方向電圧降下を有する、
ことを特徴とする絶縁ゲートバイポーラトランジスタデバイス。 - 4ボルト未満であるドレイン・ツー・ソース電圧と20マイクロメートル未満のセルピッチとを有し、かつ100アンペアよりも大きい順方向電流機能を有する、
ことを特徴とする金属酸化物半導体電界効果トランジスタデバイス。 - 前記セルピッチは、10マイクロメートル未満であることを特徴とする請求項42に記載の金属酸化物半導体電界効果トランジスタデバイス。
- 5ボルト未満であるドレイン・ツー・ソース電圧と10マイクロメートル未満のセルピッチとを有し、かつ80アンペアよりも大きい順方向電流機能を有する、
ことを特徴とする金属酸化物半導体電界効果トランジスタデバイス。 - 13キロボルト又はそれよりも高い阻止電圧と5アンペア又はそれよりも大きい順方向電流機能とを有する、
ことを特徴とする絶縁ゲートバイポーラトランジスタ。
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US10835878B2 (en) | 2016-01-06 | 2020-11-17 | The University Of British Columbia | Bifurcating mixers and methods of their use and manufacture |
JP7349788B2 (ja) | 2016-01-06 | 2023-09-25 | ザ・ユニバーシティ・オブ・ブリティッシュ・コロンビア | 分岐ミキサー並びにその使用及び製造方法 |
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KR101722811B1 (ko) | 2017-04-05 |
US9142662B2 (en) | 2015-09-22 |
US20120280270A1 (en) | 2012-11-08 |
EP2705527A1 (en) | 2014-03-12 |
KR20140027338A (ko) | 2014-03-06 |
TWI560874B (en) | 2016-12-01 |
JP6066219B2 (ja) | 2017-01-25 |
CN103620749A (zh) | 2014-03-05 |
EP2705527B1 (en) | 2019-02-27 |
TW201246537A (en) | 2012-11-16 |
CN103620749B (zh) | 2017-07-14 |
WO2012154288A1 (en) | 2012-11-15 |
EP2705527A4 (en) | 2014-11-05 |
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