JP2014197845A - 圧電デバイス - Google Patents
圧電デバイス Download PDFInfo
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- JP2014197845A JP2014197845A JP2014084425A JP2014084425A JP2014197845A JP 2014197845 A JP2014197845 A JP 2014197845A JP 2014084425 A JP2014084425 A JP 2014084425A JP 2014084425 A JP2014084425 A JP 2014084425A JP 2014197845 A JP2014197845 A JP 2014197845A
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- piezoelectric
- intermediate layer
- thin film
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- single crystal
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- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000010409 thin film Substances 0.000 claims abstract description 57
- 239000013078 crystal Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 36
- 239000002131 composite material Substances 0.000 abstract description 13
- -1 hydrogen ions Chemical class 0.000 abstract description 8
- 238000005468 ion implantation Methods 0.000 abstract description 8
- 239000001257 hydrogen Substances 0.000 abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000000926 separation method Methods 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 82
- 238000010438 heat treatment Methods 0.000 description 39
- 238000000034 method Methods 0.000 description 32
- 239000000463 material Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 11
- 238000010897 surface acoustic wave method Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 8
- 239000012528 membrane Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (5)
- 電極が形成された圧電薄膜と、該圧電薄膜を支持する支持体と、を備える圧電デバイスであって、
前記圧電薄膜と前記支持体との間に、酸化または窒化された金属を含む中間層を備え、前記圧電薄膜は圧電単結晶基板からなる圧電デバイス。 - 前記酸化または窒化された金属は、Fe、Cr、Ni、Al、W、Cuの少なくとも1種類の元素から構成される請求項1に記載の圧電デバイス。
- 前記中間層は、膜厚が2nm乃至25nmである請求項1または2に記載の圧電デバイス。
- 前記圧電薄膜は、タンタル酸リチウムまたはニオブ酸リチウムを材料とする請求項1乃至3のいずれかに記載の圧電デバイス。
- 前記圧電薄膜の導電率は、1.0×10−13Ω−1・m−1乃至1.0×10−11Ω−1・m−1である請求項1乃至3のいずれかに記載の圧電デバイス。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014084425A JP5923545B2 (ja) | 2009-11-26 | 2014-04-16 | 圧電デバイス |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009268917 | 2009-11-26 | ||
JP2009268917 | 2009-11-26 | ||
JP2014084425A JP5923545B2 (ja) | 2009-11-26 | 2014-04-16 | 圧電デバイス |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011543239A Division JP5569537B2 (ja) | 2009-11-26 | 2010-11-22 | 圧電デバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2014197845A true JP2014197845A (ja) | 2014-10-16 |
JP5923545B2 JP5923545B2 (ja) | 2016-05-24 |
Family
ID=44066422
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2011543239A Active JP5569537B2 (ja) | 2009-11-26 | 2010-11-22 | 圧電デバイスの製造方法 |
JP2014084425A Active JP5923545B2 (ja) | 2009-11-26 | 2014-04-16 | 圧電デバイス |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011543239A Active JP5569537B2 (ja) | 2009-11-26 | 2010-11-22 | 圧電デバイスの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8601657B2 (ja) |
EP (1) | EP2506431A4 (ja) |
JP (2) | JP5569537B2 (ja) |
KR (1) | KR101374303B1 (ja) |
CN (1) | CN102668376B (ja) |
WO (1) | WO2011065317A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020189115A1 (ja) * | 2019-03-15 | 2020-09-24 | 日本電気硝子株式会社 | 複合基板、電子デバイス、複合基板の製造方法及び電子デバイスの製造方法 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6357605A (ja) * | 1986-08-29 | 1988-03-12 | Nippon Shokubai Kagaku Kogyo Co Ltd | 陽イオン性水性樹脂分散液 |
JP4582235B2 (ja) * | 2008-10-31 | 2010-11-17 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
JP5182379B2 (ja) * | 2009-01-29 | 2013-04-17 | 株式会社村田製作所 | 複合基板の製造方法 |
WO2013018603A1 (ja) * | 2011-07-29 | 2013-02-07 | 株式会社村田製作所 | 弾性波デバイスの製造方法 |
EP2738939B1 (en) | 2011-07-29 | 2018-12-05 | Murata Manufacturing Co., Ltd. | Piezoelectric device and method of manufacturing piezoelectric device |
CN103765768B (zh) * | 2011-08-26 | 2016-06-01 | 株式会社村田制作所 | 压电器件以及压电器件的制造方法 |
JP5992912B2 (ja) * | 2011-09-02 | 2016-09-14 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JP6001261B2 (ja) * | 2011-12-09 | 2016-10-05 | 株式会社コイケ | 圧電基板の製造方法 |
EP2736169B1 (en) * | 2012-08-17 | 2016-09-14 | NGK Insulators, Ltd. | Composite substrate, elastic surface wave device, and method for producing composite substrate |
WO2014104098A1 (ja) * | 2012-12-26 | 2014-07-03 | 日本碍子株式会社 | 複合基板、その製法及び弾性波デバイス |
CN104078407B (zh) * | 2013-03-29 | 2018-12-04 | 济南晶正电子科技有限公司 | 薄膜和制造薄膜的方法 |
JP6174061B2 (ja) * | 2014-05-09 | 2017-08-02 | 信越化学工業株式会社 | 圧電性酸化物単結晶基板の製造方法 |
CN105321806A (zh) * | 2015-08-21 | 2016-02-10 | 济南晶正电子科技有限公司 | 复合单晶薄膜和制造复合单晶薄膜的方法 |
US9627249B2 (en) * | 2015-09-17 | 2017-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure and method for manufacturing the same |
WO2017163723A1 (ja) * | 2016-03-25 | 2017-09-28 | 日本碍子株式会社 | 接合方法 |
FR3051979B1 (fr) * | 2016-05-25 | 2018-05-18 | Soitec | Procede de guerison de defauts dans une couche obtenue par implantation puis detachement d'un substrat |
CN106209003B (zh) * | 2016-07-06 | 2019-03-22 | 中国科学院上海微系统与信息技术研究所 | 利用薄膜转移技术制备薄膜体声波器件的方法 |
TWI611604B (zh) * | 2017-01-03 | 2018-01-11 | 穩懋半導體股份有限公司 | 體聲波濾波器及調諧體聲波濾波器之體聲波共振器之方法 |
JP6892061B2 (ja) * | 2017-01-27 | 2021-06-18 | 新日本無線株式会社 | バルク弾性波共振器の製造方法 |
FR3078822B1 (fr) * | 2018-03-12 | 2020-02-28 | Soitec | Procede de preparation d’une couche mince de materiau ferroelectrique a base d’alcalin |
CN109327201A (zh) * | 2018-11-27 | 2019-02-12 | 中电科技德清华莹电子有限公司 | 一种谐振结构声表面波滤波器 |
CN109327200A (zh) * | 2018-11-27 | 2019-02-12 | 中电科技德清华莹电子有限公司 | 一种声表面波谐振结构滤波器 |
CN110224685B (zh) * | 2019-05-13 | 2021-09-24 | 电子科技大学 | 一种单晶薄膜体声波滤波器及其微细加工方法 |
US11864465B2 (en) | 2020-05-22 | 2024-01-02 | Wisconsin Alumni Research Foundation | Integration of semiconductor membranes with piezoelectric substrates |
CN112542379B (zh) * | 2020-12-09 | 2022-11-08 | 济南晶正电子科技有限公司 | 一种薄膜图形化工艺方法、复合薄膜及电子元器件 |
KR20230128098A (ko) * | 2021-02-19 | 2023-09-01 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 복합 웨이퍼 및 그 제조 방법 |
CN113690365B (zh) * | 2021-07-23 | 2024-02-13 | 绍兴中芯集成电路制造股份有限公司 | 压电器件及其制作方法 |
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WO2020189115A1 (ja) * | 2019-03-15 | 2020-09-24 | 日本電気硝子株式会社 | 複合基板、電子デバイス、複合基板の製造方法及び電子デバイスの製造方法 |
JPWO2020189115A1 (ja) * | 2019-03-15 | 2020-09-24 |
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Publication number | Publication date |
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CN102668376A (zh) | 2012-09-12 |
US20120229003A1 (en) | 2012-09-13 |
WO2011065317A1 (ja) | 2011-06-03 |
KR20120073352A (ko) | 2012-07-04 |
EP2506431A4 (en) | 2014-02-26 |
KR101374303B1 (ko) | 2014-03-14 |
JPWO2011065317A1 (ja) | 2013-04-11 |
US9240540B2 (en) | 2016-01-19 |
CN102668376B (zh) | 2017-08-25 |
JP5923545B2 (ja) | 2016-05-24 |
US20140055008A1 (en) | 2014-02-27 |
JP5569537B2 (ja) | 2014-08-13 |
US8601657B2 (en) | 2013-12-10 |
EP2506431A1 (en) | 2012-10-03 |
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