WO2017163723A1 - 接合方法 - Google Patents
接合方法 Download PDFInfo
- Publication number
- WO2017163723A1 WO2017163723A1 PCT/JP2017/006463 JP2017006463W WO2017163723A1 WO 2017163723 A1 WO2017163723 A1 WO 2017163723A1 JP 2017006463 W JP2017006463 W JP 2017006463W WO 2017163723 A1 WO2017163723 A1 WO 2017163723A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- single crystal
- crystal substrate
- piezoelectric single
- bonding layer
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 claims abstract description 163
- 239000013078 crystal Substances 0.000 claims abstract description 88
- 239000000463 material Substances 0.000 claims abstract description 42
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052863 mullite Inorganic materials 0.000 claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 14
- 230000001678 irradiating effect Effects 0.000 claims abstract description 11
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 11
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims abstract description 9
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000003472 neutralizing effect Effects 0.000 claims abstract description 5
- 238000005304 joining Methods 0.000 claims description 28
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 14
- 230000004913 activation Effects 0.000 claims description 9
- 230000007935 neutral effect Effects 0.000 claims description 9
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims description 2
- 229910052878 cordierite Inorganic materials 0.000 claims description 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 239000006104 solid solution Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 110
- 238000010897 surface acoustic wave method Methods 0.000 description 31
- 239000010408 film Substances 0.000 description 20
- 238000000227 grinding Methods 0.000 description 19
- 238000005498 polishing Methods 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 17
- IUVCFHHAEHNCFT-INIZCTEOSA-N 2-[(1s)-1-[4-amino-3-(3-fluoro-4-propan-2-yloxyphenyl)pyrazolo[3,4-d]pyrimidin-1-yl]ethyl]-6-fluoro-3-(3-fluorophenyl)chromen-4-one Chemical compound C1=C(F)C(OC(C)C)=CC=C1C(C1=C(N)N=CN=C11)=NN1[C@@H](C)C1=C(C=2C=C(F)C=CC=2)C(=O)C2=CC(F)=CC=C2O1 IUVCFHHAEHNCFT-INIZCTEOSA-N 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000007517 polishing process Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000001994 activation Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 235000019687 Lamb Nutrition 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000000678 plasma activation Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- RIUWBIIVUYSTCN-UHFFFAOYSA-N trilithium borate Chemical compound [Li+].[Li+].[Li+].[O-]B([O-])[O-] RIUWBIIVUYSTCN-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
- H03H9/02622—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves of the surface, including back surface
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Definitions
- the present invention relates to a method for joining a piezoelectric single crystal substrate and a support substrate made of ceramics.
- acoustic wave devices that can function as filter elements and oscillators used in mobile phones, etc., and acoustic wave devices such as Lamb wave elements and thin film resonators (FBARs) using piezoelectric thin films are known.
- FBARs thin film resonators
- a device in which a supporting substrate and a piezoelectric substrate that propagates a surface acoustic wave are bonded together and a comb-shaped electrode capable of exciting the surface acoustic wave is provided on the surface of the piezoelectric substrate is known.
- Patent Document 1 proposes a surface acoustic wave device having a structure in which a piezoelectric substrate and a silicon substrate are bonded together with an adhesive layer made of an epoxy adhesive.
- the surface of the piezoelectric substrate is a rough surface
- a filling layer is provided on the rough surface
- the surface is flattened
- the filling layer is bonded to the silicon substrate via the adhesive layer
- Patent Document 3 epoxy resin and acrylic resin are used for the filling layer and adhesive layer, and by making the bonding surface of the piezoelectric substrate rough, the reflection of bulk waves is suppressed and spurious is reduced. Yes.
- FAB Fast Atom Beam
- Patent Document 4 a so-called FAB (Fast Atom Beam) type direct bonding method.
- a neutralized atom beam is irradiated to each bonding surface at normal temperature to activate and bond directly.
- Patent Document 5 describes that a piezoelectric single crystal substrate is directly bonded to a support substrate made of ceramics (alumina, aluminum nitride, silicon nitride) instead of a silicon substrate via an intermediate layer. Yes.
- the intermediate layer is made of silicon, silicon oxide, silicon nitride, or aluminum nitride.
- the piezoelectric single crystal substrate is directly bonded to the support substrate made of ceramics, if the plasma activation method is used for bonding, the piezoelectric single crystal substrate is cracked by the thermal expansion difference between the piezoelectric single crystal substrate and the ceramics during heating after bonding. Moreover, if it does not heat after joining, joining strength will be low and will peel in the middle of a processing process.
- Patent Document 5 there is also a method in which a predetermined intermediate layer is provided on the surface of a support substrate made of ceramics, activated by irradiating the intermediate layer with an ionized beam, and directly bonded to the piezoelectric single crystal substrate. .
- a predetermined intermediate layer is provided on the surface of a support substrate made of ceramics, activated by irradiating the intermediate layer with an ionized beam, and directly bonded to the piezoelectric single crystal substrate.
- An object of the present invention is to enable bonding at room temperature and improve bonding strength when directly bonding a piezoelectric single crystal substrate and a supporting substrate made of ceramics.
- the present invention is a method of bonding a support substrate made of ceramics and a piezoelectric single crystal substrate, Forming a bonding layer on the support substrate, the bonding layer comprising one or more materials selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide; It has a step of activating the surface of the bonding layer by irradiating the surface of the bonding layer with a neutral beam, and a step of directly bonding the surface of the bonding layer and the piezoelectric single crystal substrate.
- the piezoelectric single crystal substrate and the support substrate made of ceramics are directly bonded, bonding at room temperature is possible and the bonding strength can be improved.
- (A) shows the state which provided the joining layer 2 on the support substrate 1 which consists of ceramics
- (b) shows the state which planarized the surface 3a of the joining layer 3
- (c) is a flat surface.
- 4 shows a state where 4 is activated by the neutralizing beam A.
- (A) shows a state where the piezoelectric single crystal substrate 6 and the support substrate 1 are joined
- (b) shows a state where the piezoelectric single crystal substrate 6A is thinned by processing
- (c) shows a state where the piezoelectric single crystal substrate 6A is thinned.
- a state in which the electrode 10 is provided on the crystal substrate 6A is shown.
- (A) shows a state in which the surface 11a of the piezoelectric single crystal substrate 11 is a rough surface
- (b) shows a state in which the intermediate layer 12 is provided on the rough surface 11a
- (c) shows a state in which the intermediate layer 12 is provided.
- 13 shows a state in which the surface 13a of 13 is flattened
- (d) shows a state in which the flat surface 14 is activated by the neutralizing beam A.
- (A) shows a state where the piezoelectric single crystal substrate 11 and the support substrate 1 are joined
- (b) shows a state where the piezoelectric single crystal substrate 11A is thinned by processing
- (c) shows a state where the piezoelectric single crystal substrate 11A is thinned.
- the state which provided the electrode 10 on 11 A of crystal substrates is shown.
- 1 and 2 relate to an embodiment in which a bonding layer is provided on a support substrate and this is directly bonded to the surface of a piezoelectric single crystal substrate.
- a bonding layer 2 is provided on a surface 1a of a support substrate 1 made of ceramics. 1b is the opposite surface. At this time, the surface 2a of the bonding layer 2 may be uneven.
- the flat surface 3 a is formed by flattening the surface 2 a of the bonding layer 2.
- the thickness of the bonding layer 2 is usually reduced, resulting in a thinner bonding layer 3 (see FIG. 1B).
- planarization is not always necessary.
- the flat surface 3 a is irradiated with a neutral beam as indicated by an arrow A to activate the surface of the bonding layer 3 ⁇ / b> A to be an activated surface 4.
- the surface of the piezoelectric single crystal substrate 6 is activated by irradiating it with a neutralized beam to obtain an activated surface 6a.
- the bonded body 7 is obtained by directly bonding the activation surface 6a of the piezoelectric single crystal substrate 6 and the activation surface 4 of the bonding layer 3A.
- the surface 6b of the piezoelectric single crystal substrate of the bonded body 7 is further polished to reduce the thickness of the piezoelectric single crystal substrate 6A as shown in FIG. Get. 6c is a polished surface.
- the surface acoustic wave element 9 is produced by forming a predetermined electrode 10 on the polished surface 6c of the piezoelectric single crystal substrate 6A.
- FIGS. 3 and 4 relate to an embodiment in which the surface of the piezoelectric single crystal substrate is rough.
- the surface 11a of the piezoelectric single crystal substrate 11 is processed to form a rough surface 11a.
- 11b is the opposite surface.
- the intermediate layer 12 is provided on the rough surface 11a.
- the rough surface is also transferred to the surface 12a of the intermediate layer 12, and irregularities are formed.
- the surface 12a of the intermediate layer 12 is flattened to form a flat surface 13a as shown in FIG.
- the thickness of the intermediate layer 12 is usually reduced, resulting in a thinner intermediate layer 13.
- the flat surface 13 a is irradiated with a neutral beam as indicated by an arrow A to activate the surface of the intermediate layer 13 ⁇ / b> A to be an activated surface 14.
- the flat surface of the bonding layer 3 ⁇ / b> A on the support substrate 1 is activated by irradiating with a neutral beam, thereby forming an activated surface 4.
- the joined surface 17 is obtained by directly joining the activated surface 4 of the joining layer 3A and the activated surface 14 of the intermediate layer 13A (FIG. 4A).
- the surface 11b of the piezoelectric single crystal substrate of the bonded body 17 is further polished to reduce the thickness of the piezoelectric material substrate 11A as shown in FIG. obtain.
- 11c is a polished surface.
- a predetermined electrode 10 is formed on the polishing surface 11c of the piezoelectric material substrate 11A.
- the joined body of the present invention is not particularly limited, and can be suitably applied to, for example, an acoustic wave element or an optical element.
- a surface acoustic wave device As the acoustic wave element, a surface acoustic wave device, a Lamb wave element, a thin film resonator (FBAR), and the like are known.
- a surface acoustic wave device has an IDT (Interdigital-Transducer) electrode (also referred to as a comb-shaped electrode or a comb-shaped electrode) for exciting surface acoustic waves on the surface of a piezoelectric material substrate and an output side for receiving surface acoustic waves. IDT electrodes are provided. When a high frequency signal is applied to the IDT electrode on the input side, an electric field is generated between the electrodes, and a surface acoustic wave is excited and propagates on the piezoelectric substrate. Then, the propagated surface acoustic wave can be taken out as an electric signal from the IDT electrode on the output side provided in the propagation direction.
- IDT Interdigital-Transducer
- a metal film may be provided on the bottom surface of the piezoelectric single crystal substrate.
- the metal film plays a role of increasing the electromechanical coupling coefficient in the vicinity of the back surface of the piezoelectric substrate when a Lamb wave element is manufactured as an elastic wave device.
- the Lamb wave element has a structure in which comb electrodes are formed on the surface of the piezoelectric single crystal substrate, and the metal film of the piezoelectric substrate is exposed by the cavity provided in the support substrate.
- Examples of the material of such a metal film include aluminum, an aluminum alloy, copper, and gold.
- a metal film and an insulating film may be provided on the bottom surface of the piezoelectric single crystal substrate.
- the metal film serves as an electrode when a thin film resonator is manufactured as an acoustic wave device.
- the thin film resonator has a structure in which electrodes are formed on the front and back surfaces of the piezoelectric substrate, and the metal film of the piezoelectric substrate is exposed by using the insulating film as a cavity.
- the material for such a metal film include molybdenum, ruthenium, tungsten, chromium, and aluminum.
- the material for the insulating film include silicon dioxide, phosphorous silica glass, and boron phosphorous silica glass.
- examples of the optical element include an optical switching element, a wavelength conversion element, and an optical modulation element.
- a periodically poled structure can be formed in the piezoelectric material substrate.
- the present invention When the present invention is applied to an optical element, it is possible to reduce the size of the optical element. In particular, when a periodic polarization reversal structure is formed, deterioration of the periodic polarization reversal structure due to heat treatment can be prevented. Furthermore, since the bonding layer material of the present invention is also a highly insulating material, the occurrence of polarization reversal is suppressed during the treatment with the neutralized beam before bonding, and the periodically poled structure formed on the piezoelectric single crystal substrate There is almost no disturbing shape.
- the surface of the piezoelectric single crystal substrate can be activated by the neutralized beam.
- the surface of the piezoelectric material substrate is a flat surface
- this surface can be directly bonded to the bonding layer.
- the activated flat surface of the intermediate layer on the piezoelectric single crystal substrate can be directly bonded to the bonding layer on the support substrate.
- the material of the piezoelectric single crystal substrate include lithium tantalate (LT) single crystal, lithium niobate (LN) single crystal, lithium niobate-lithium tantalate solid solution single crystal, crystal, and lithium borate. It can. Of these, LT or LN is more preferable. LT and LN are suitable as surface acoustic wave devices for high frequencies and wideband frequencies because of the high propagation speed of surface acoustic waves and a large electromechanical coupling coefficient.
- the normal direction of the principal surface of the piezoelectric single crystal substrate is not particularly limited.
- the piezoelectric single crystal substrate is made of LT
- the Y axis is centered on the X axis that is the propagation direction of the surface acoustic wave. It is preferable to use a direction rotated by 36 to 47 ° (for example, 42 °) from the Z axis to the small propagation loss.
- the piezoelectric material substrate is made of LN
- the size of the piezoelectric single crystal substrate is not particularly limited.
- the piezoelectric single crystal substrate has a diameter of 50 to 150 mm and a thickness of 0.2 to 60 ⁇ m.
- the material of the support substrate is ceramic. This is preferably exemplified by a material selected from the group consisting of mullite, cordierite and sialon.
- the bonding layer is made of one or more materials selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide, and niobium pentoxide.
- the method for forming the bonding layer is not limited, but examples include sputtering, chemical vapor deposition (CVD), and vapor deposition.
- the surface of the bonding layer is flattened to obtain a flat surface.
- methods for flattening the surface of the bonding layer include lapping and chemical mechanical polishing (CMP).
- the flat surface preferably has an arithmetic average roughness Ra ⁇ 1 nm, and more preferably 0.3 nm or less.
- the surface of the piezoelectric single crystal substrate is processed to form a rough surface.
- This rough surface is a surface in which periodic irregularities are uniformly formed in the surface, the arithmetic average roughness is 0.05 ⁇ m ⁇ Ra ⁇ 0.5 ⁇ m, and the height Ry from the lowest valley bottom to the largest mountain top is 0.5 ⁇ m ⁇ The range is Ry ⁇ 5 ⁇ m.
- the suitable roughness depends on the wavelength of the elastic wave and is appropriately selected so that reflection of the bulk wave can be suppressed.
- the roughening method includes grinding, polishing, etching, sand blasting, and the like.
- the flat surface of the bonding layer is activated by irradiating the flat surface of the bonding layer with a neutral beam.
- the surface of the piezoelectric single crystal substrate or the surface of the intermediate layer thereon is flattened to obtain a flat surface.
- methods for planarizing the surface of the piezoelectric single crystal substrate or the intermediate layer include lap polishing, chemical mechanical polishing (CMP), and the like.
- the flat surface preferably has an arithmetic average roughness Ra ⁇ 1 nm, and more preferably 0.3 nm or less.
- the intermediate layer is formed on the rough surface of the piezoelectric material substrate, it is particularly preferable to planarize the surface of the intermediate layer.
- the surface of the support substrate and the surface of the piezoelectric material substrate are flat, the surface of the bonding layer and the surface of the intermediate layer are not necessarily flattened, but may be flattened.
- the intermediate layer is made of one or more materials selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide.
- the method for forming the intermediate layer is not limited, and examples thereof include sputtering, chemical vapor deposition (CVD), and vapor deposition.
- the flat surface is activated by irradiating the surface of the piezoelectric single crystal substrate or the flat surface of the intermediate layer on the piezoelectric single crystal substrate with a neutral beam.
- a saddle field type fast atomic beam source is used as the beam source.
- an inert gas is introduced into the chamber, and a high voltage is applied to the electrodes from a DC power source.
- the saddle field type electric field generated between the electrode (positive electrode) and the casing (negative electrode) moves the electrons e, thereby generating atomic and ion beams by the inert gas.
- the ion beam is neutralized by the grid, so that a beam of neutral atoms is emitted from the fast atom beam source.
- the atomic species constituting the beam is preferably an inert gas (argon, nitrogen, etc.).
- the voltage upon activation by beam irradiation is preferably 0.5 to 2.0 kV, and the current is preferably 50 to 200 mA.
- the temperature at this time is room temperature, but specifically, it is preferably 40 ° C. or lower, more preferably 30 ° C. or lower.
- the temperature at the time of joining is particularly preferably 20 ° C. or higher and 25 ° C. or lower.
- the pressure at the time of joining is preferably 100 to 20000 N.
- Example A1 A joined body was produced according to the method described with reference to FIGS. Specifically, a lithium tantalate substrate (LT substrate) having an orientation flat portion (OF portion), a diameter of 4 inches, and a thickness of 250 ⁇ m was used as the piezoelectric single crystal substrate 6. Further, a mullite substrate having an OF portion, a diameter of 4 inches, and a thickness of 230 ⁇ m was prepared as the support substrate 1. As the LT substrate, a 46 ° Y-cut X-propagation LT substrate in which the propagation direction of the surface acoustic wave (SAW) is X and the cutting angle is a rotating Y-cut plate is used.
- SAW surface acoustic wave
- the surface 6a of the piezoelectric single crystal substrate 6 was mirror-polished so that the arithmetic average roughness Ra was 1 nm.
- the arithmetic average roughness Ra of the surface 6a of the support substrate 6 made of mullite is 2 nm.
- Arithmetic mean roughness was evaluated by an atomic force microscope (AFM) with a square field of 10 ⁇ m length ⁇ 10 ⁇ m width.
- a bonding layer 2 made of mullite was formed on the surface 1 a of the support substrate 1 by a CVD method with a thickness of 1.0 ⁇ m. Ra after film formation was 2.0 nm.
- the bonding layer 2 was subjected to chemical mechanical polishing (CMP) to have a film thickness of 0.5 ⁇ m and Ra of 0.3 nm.
- CMP chemical mechanical polishing
- the flat surface 3a of the bonding layer 3 and the surface 6a of the piezoelectric single crystal substrate 6 were cleaned, removed, and then introduced into a vacuum chamber. After evacuation to a level of 10 ⁇ 6 Pa, high-speed atomic beams (acceleration voltage 1 kV, Ar flow rate 27 sccm) were irradiated for 120 seconds to the bonding surfaces of the respective substrates. Next, after the beam irradiation surface (activation surface) 4 of the bonding layer 3A and the activation surface 6a of the piezoelectric single crystal substrate 6 were brought into contact with each other, the substrates were bonded by pressing at 10000 N for 2 minutes.
- the surface 6b of the piezoelectric single crystal substrate 6 was ground and polished so that the thickness was changed from the initial 250 ⁇ m to 20 ⁇ m (see FIG. 2B). During the grinding and polishing process, no peeling of the joint could be confirmed. Moreover, it was 1.4 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method.
- Example A2 In Example A1, the material of the bonding layer 2 was alumina, and the sputtering method was used for forming the bonding layer 2. Otherwise, the joined body was manufactured in the same manner as in Example A1. As a result, it was not possible to confirm peeling of the joint portion during the grinding and polishing steps of the piezoelectric single crystal substrate. Moreover, it was 1.3 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method.
- Example A3 In Example A1, the material of the bonding layer 2 was tantalum pentoxide, and the sputtering method was used to form the bonding layer 2. Otherwise, the joined body was manufactured in the same manner as in Example A1. As a result, it was not possible to confirm peeling of the joint portion during the grinding and polishing steps of the piezoelectric single crystal substrate. Moreover, it was 1.3 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method.
- Example A4 In Example A1, the material of the bonding layer 2 was titanium oxide, and the sputtering method was used to form the bonding layer 2. Otherwise, the joined body was manufactured in the same manner as in Example A1. As a result, it was not possible to confirm peeling of the joint portion during the grinding and polishing steps of the piezoelectric single crystal substrate. Moreover, it was 1.6 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method.
- Example A5 In Example A1, the material of the bonding layer 2 was niobium pentoxide, and the sputtering method was used to form the bonding layer 2. Otherwise, the joined body was manufactured in the same manner as in Example A1. As a result, it was not possible to confirm peeling of the joint portion during the grinding and polishing steps of the piezoelectric single crystal substrate. Moreover, it was 1.6 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method.
- Example A1 the material of the bonding layer 2 was silicon nitride, and the sputtering method was used to form the bonding layer 2. Otherwise, the joined body was manufactured in the same manner as in Example A1. As a result, peeling of the joint portion occurred during the grinding and polishing process of the piezoelectric single crystal substrate. Moreover, it was 0.6 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method.
- Example A2 In Example A1, the material of the bonding layer 2 was aluminum nitride, and the sputtering method was used to form the bonding layer 2. Otherwise, the joined body was manufactured in the same manner as in Example A1. As a result, peeling of the joint portion occurred during the grinding and polishing process of the piezoelectric single crystal substrate. Moreover, when the joint strength was evaluated by a crack opening method, it was 0.5 J / m 2 .
- Example A3 In Example A1, the material of the bonding layer 2 was silicon oxide, and the sputtering method was used to form the bonding layer 2. Otherwise, the joined body was manufactured in the same manner as in Example A1. As a result, peeling of the joint portion occurred during the grinding and polishing process of the piezoelectric single crystal substrate. Moreover, it was 0.1 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method.
- Example A4 In the same manner as in Example A3, a tantalum pentoxide layer was provided as the bonding layer 2. Then, the surface of the bonding layer and the surface of the piezoelectric single crystal substrate were surface activated by a plasma activation method. Others were manufactured in the same manner as in Example A3. After evacuating the chamber to the 10 ⁇ 1 Pa level, the wafer surface is irradiated with N 2 plasma (power 200 W) for 60 s, then released to the atmosphere and washed with pure water. Furthermore, it joined in air
- Example B1 According to the method described with reference to FIGS. 1, 3, and 4, a joined body was produced. Specifically, a lithium tantalate substrate (LT substrate) having an orientation flat portion (OF portion), a diameter of 4 inches, and a thickness of 250 ⁇ m was used as the piezoelectric single crystal substrate. Further, a mullite substrate having an OF portion, a diameter of 4 inches, and a thickness of 230 ⁇ m was prepared as the support substrate 1. As the LT substrate, a 46 ° Y-cut X-propagation LT substrate in which the propagation direction of the surface acoustic wave (SAW) is X and the cutting angle is a rotating Y-cut plate is used.
- SAW surface acoustic wave
- the surface of the piezoelectric single crystal substrate was mirror-polished so that the arithmetic average roughness Ra was 1 nm.
- the arithmetic average roughness Ra of the surface 1a of the support substrate 1 made of mullite is 2 nm.
- Arithmetic mean roughness was evaluated by an atomic force microscope (AFM) with a square field of 10 ⁇ m length ⁇ 10 ⁇ m width.
- a bonding layer 2 made of mullite was formed on the surface 1 a of the support substrate 1 by a CVD method with a thickness of 1.0 ⁇ m. Ra after film formation was 2.0 nm.
- the bonding layer 2 was subjected to chemical mechanical polishing (CMP) to have a film thickness of 0.5 ⁇ m and Ra of 0.3 nm.
- CMP chemical mechanical polishing
- the surface 11a of the piezoelectric single crystal substrate 11 was roughened by a lapping machine so as to have an arithmetic average roughness Ra of 0.1 ⁇ m.
- an intermediate layer 12 made of mullite was formed to a thickness of 2 ⁇ m on the rough surface 11 a of the piezoelectric single crystal substrate 11, and minute irregularities on the back surface were filled.
- the surface 12a of the intermediate layer had an arithmetic average roughness Ra of 0.1 ⁇ m.
- the surface 12a of the intermediate layer was subjected to chemical mechanical polishing (CMP) to obtain a film thickness of 0.5 ⁇ m and Ra 0.3 nm.
- CMP chemical mechanical polishing
- the flat surface 13a of the intermediate layer 13 on the piezoelectric single crystal substrate 11 and the flat surface 3a of the bonding layer 3 on the support substrate were washed to remove the surface contamination, and then introduced into the vacuum chamber. After evacuation to the 10 ⁇ 6 Pa level, surface activation was performed by irradiating the bonding surfaces of the respective substrates with a high-speed atomic beam (acceleration voltage 1 kV, Ar flow rate 27 sccm) for 120 seconds. Next, the activated flat surface 4 of the bonding layer 3A on the support substrate and the activated surface 14 of the intermediate layer 13A on the piezoelectric single crystal substrate are brought into contact with each other, and then pressurized at 1000 N for 2 minutes. The substrates were joined. Next, the surface 11c of the piezoelectric single crystal substrate 11 was ground and polished so that the thickness became 250 ⁇ m from the initial 250 ⁇ m.
- Example B2 In Example B1, the material of the bonding layer 2 was alumina, and the sputtering method was used for forming the bonding layer 2. Further, the material of the intermediate layer 13A was alumina, and the sputtering method was used for forming the intermediate layer. Others were produced in the same manner as in Example B1. As a result, it was not possible to confirm peeling of the joint portion during the grinding and polishing steps of the piezoelectric single crystal substrate. Moreover, it was 1.5 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method. A SAW (surface acoustic wave) filter was produced using the produced joined body and heated at 300 ° C., but peeling at the joining interface and frequency shift could not be confirmed.
- SAW surface acoustic wave
- Example B3 In Example B1, the material of the bonding layer 2 was tantalum pentoxide, and the sputtering method was used to form the bonding layer 2. Further, the material of the intermediate layer 13A was tantalum pentoxide, and the sputtering method was used to form the intermediate layer. Others were produced in the same manner as in Example B1. As a result, it was not possible to confirm peeling of the joint portion during the grinding and polishing steps of the piezoelectric single crystal substrate. Moreover, it was 1.6 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method. A SAW (surface acoustic wave) filter was produced using the produced joined body and heated at 300 ° C., but peeling at the joining interface and frequency shift could not be confirmed.
- SAW surface acoustic wave
- Example B4 In Example B1, the material of the bonding layer 2 was titanium oxide, and the sputtering method was used for forming the bonding layer 2. Further, the material of the intermediate layer 13A was titanium oxide, and the sputtering method was used to form the intermediate layer. Others were produced in the same manner as in Example B1. As a result, it was not possible to confirm peeling of the joint portion during the grinding and polishing steps of the piezoelectric single crystal substrate. Moreover, when the joint strength was evaluated by a crack opening method, it was 1.8 J / m 2 . A SAW (surface acoustic wave) filter was produced using the produced joined body and heated at 300 ° C., but peeling at the joining interface and frequency shift could not be confirmed.
- SAW surface acoustic wave
- Example B5 In Example B1, the material of the bonding layer 2 was niobium pentoxide, and the sputtering method was used to form the bonding layer 2. Further, the material of the intermediate layer 13A was niobium pentoxide, and the sputtering method was used to form the intermediate layer. Others were produced in the same manner as in Example B1. As a result, it was not possible to confirm peeling of the joint portion during the grinding and polishing steps of the piezoelectric single crystal substrate. Moreover, when the joint strength was evaluated by a crack opening method, it was 1.8 J / m 2 . A SAW (surface acoustic wave) filter was produced using the produced joined body and heated at 300 ° C., but peeling at the joining interface and frequency shift could not be confirmed.
- SAW surface acoustic wave
- Example B1 (Comparative Example B1)
- the material of the bonding layer 2 and the intermediate layer 13A was silicon nitride. Others were produced in the same manner as in Example B1. As a result, peeling of the joint portion occurred during the grinding and polishing process of the piezoelectric single crystal substrate. Moreover, it was 0.7 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method.
- Example B2 (Comparative Example B2)
- the material of the bonding layer 2 and the intermediate layer 13A was aluminum nitride. Others were produced in the same manner as in Example B1. As a result, peeling of the joint portion occurred during the grinding and polishing process of the piezoelectric single crystal substrate. Moreover, it was 0.6 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method.
- Example B3 In Example B1, the material of the bonding layer 2 and the intermediate layer 13A was silicon oxide. Others were produced in the same manner as in Example B1. As a result, peeling of the joint portion occurred during the grinding and polishing process of the piezoelectric single crystal substrate. Moreover, it was 0.1 J / m ⁇ 2 > when the joining strength was evaluated by the crack opening method.
- Example B4 In Example B1, the material of the bonding layer 2 and the intermediate layer 13A was tantalum pentoxide. However, in this example, the surface of the bonding layer and the surface of the intermediate layer were surface activated by the plasma activation method. Others were produced in the same manner as in Example B1. After evacuating the chamber to the 10 ⁇ 1 Pa level, the wafer surface is irradiated with N 2 plasma (power 200 W) for 60 s, then released to the atmosphere and washed with pure water. Furthermore, it joined in air
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
例えば、特許文献1には、圧電基板とシリコン基板とをエポキシ接着剤からなる接着層によって貼り合わせた構造の弾性表面波デバイスが提案されている。
支持基板上に接合層を形成し、接合層がムライト、アルミナ、五酸化タンタル、酸化チタンおよび五酸化ニオブからなる群より選ばれた一種以上の材質からなる工程、
接合層の表面に中性化ビームを照射することで接合層の表面を活性化する工程、および
接合層の表面と圧電性単結晶基板とを直接接合する工程
を有することを特徴とする。
図1、図2は、支持基板上に接合層を設け、これを圧電性単結晶基板の表面に直接接合する実施形態に係るものである。
次いで、図1(c)に示すように、平坦面3aに対して矢印Aのように中性化ビームを照射し、接合層3Aの表面を活性化して活性化面4とする。
本発明の接合体の用途は特に限定されず、例えば、弾性波素子や光学素子に好適に適用できる。
また、粗面化加工の方法は、研削、研磨、エッチング、サンドブラストなどがある。
ビーム照射による活性化時の電圧は0.5~2.0kVとすることが好ましく、電流は50~200mAとすることが好ましい。
図1~図2を参照しつつ説明した方法に従って、接合体を作製した。
具体的には、オリエンテーションフラット部(OF部)を有し、直径が4インチ,厚さが250μmのタンタル酸リチウム基板(LT基板)を、圧電性単結晶基板6として使用した。また、支持基板1として、OF部を有し、直径が4インチ,厚さが230μmのムライト基板を用意した。LT基板は、弾性表面波(SAW)の伝搬方向をXとし、切り出し角が回転Yカット板である46°YカットX伝搬LT基板を用いた。圧電性単結晶基板6の表面6aは、算術平均粗さRaが1nmとなるように鏡面研磨しておいた。ムライトからなる支持基板6の表面6aの算術平均粗さRaは2nmである。算術平均粗さは原子間力顕微鏡(AFM)で、縦10μm×横10μmの正方形の視野を評価した。
実施例A1において、接合層2の材質をアルミナとし、接合層2の成膜にはスパッタリング法を用いた。その他は実施例A1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれは確認できなかった。またクラックオープニング法で接合強度を評価した所、1.3J/m2であった。
実施例A1において、接合層2の材質を五酸化タンタルとし、接合層2の成膜にはスパッタリング法を用いた。その他は実施例A1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれは確認できなかった。またクラックオープニング法で接合強度を評価した所、1.3J/m2であった。
実施例A1において、接合層2の材質を酸化チタンとし、接合層2の成膜にはスパッタリング法を用いた。その他は実施例A1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれは確認できなかった。またクラックオープニング法で接合強度を評価した所、1.6J/m2であった。
実施例A1において、接合層2の材質を五酸化ニオブとし、接合層2の成膜にはスパッタリング法を用いた。その他は実施例A1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれは確認できなかった。またクラックオープニング法で接合強度を評価した所、1.6J/m2であった。
実施例A1において、接合層2の材質を窒化珪素とし、接合層2の成膜にはスパッタリング法を用いた。その他は実施例A1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれが発生した。またクラックオープニング法で接合強度を評価した所、0.6J/m2であった。
実施例A1において、接合層2の材質を窒化アルミニウムとし、接合層2の成膜にはスパッタリング法を用いた。その他は実施例A1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれが発生した。またクラックオープニング法で接合強度を評価した所、0.5J/m2であった。
実施例A1において、接合層2の材質を酸化珪素とし、接合層2の成膜にはスパッタリング法を用いた。その他は実施例A1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれが発生した。またクラックオープニング法で接合強度を評価した所、0.1J/m2であった。
実施例A3と同様にして、接合層2として五酸化タンタル層を設けた。そして、接合層の表面と圧電性単結晶基板の表面とをプラズマ活性化法によって表面活性化した。その他は実施例A3と同様にして接合体を製造した。チャンバー内を10-1Pa台まで真空引きした後、ウェハー表面にN2プラズマ(パワー200W)を60s照射し、その後大気に出し、純水で洗浄する。更に大気中で接合させ、荷重2000Nを2分間印加した。
この結果、圧電性材料基板の研削および研磨工程中に接合部分の剥がれが発生した。またクラックオープニング法で接合強度を評価した所、0.3J/m2であった。
以上の結果を表1に簡潔にまとめた。
図1、図3、図4を参照しつつ説明した方法に従い、接合体を作製した。
具体的には、オリエンテーションフラット部(OF部)を有し、直径が4インチ,厚さが250μmのタンタル酸リチウム基板(LT基板)を、圧電性単結晶基板として使用した。また、支持基板1として、OF部を有し、直径が4インチ,厚さが230μmのムライト基板を用意した。LT基板は、弾性表面波(SAW)の伝搬方向をXとし、切り出し角が回転Yカット板である46°YカットX伝搬LT基板を用いた。圧電性単結晶基板の表面は、算術平均粗さRaが1nmとなるように鏡面研磨しておいた。ムライトからなる支持基板1の表面1aの算術平均粗さRaは2nmである。算術平均粗さは原子間力顕微鏡(AFM)で、縦10μm×横10μmの正方形の視野を評価した。
次いで、圧電性単結晶基板11の粗面11a上に、ムライトからなる中間層12を厚さ2μm成膜し、裏面の微小な凹凸を埋めた。なお、この時点における中間層の表面12aは算術平均粗さRaが0.1μmであった。次に、中間層の表面12aを化学機械研磨加工(CMP)し、膜厚0.5μm、Ra0.3nmとした。
次いで、圧電性単結晶基板11の表面11cを、厚みが当初の250μmから20μmになるように研削及び研磨した。
作製した接合体を用いてSAW(表面弾性波)フィルターを作製し、300℃で加熱をしたが、接合界面での剥離や、周波数のシフトは確認できなかった。
実施例B1において、接合層2の材質をアルミナとし、接合層2の成膜にはスパッタリング法を用いた。また、中間層13Aの材質をアルミナとし、中間層の成膜にはスパッタリング法を用いた。その他は実施例B1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれは確認できなかった。またクラックオープニング法で接合強度を評価した所、1.5J/m2であった。
作製した接合体を用いてSAW(表面弾性波)フィルターを作製し、300℃で加熱をしたが、接合界面での剥離や、周波数のシフトは確認できなかった。
実施例B1において、接合層2の材質を五酸化タンタルとし、接合層2の成膜にはスパッタリング法を用いた。また、中間層13Aの材質を五酸化タンタルとし、中間層の成膜にはスパッタリング法を用いた。その他は実施例B1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれは確認できなかった。またクラックオープニング法で接合強度を評価した所、1.6J/m2であった。
作製した接合体を用いてSAW(表面弾性波)フィルターを作製し、300℃で加熱をしたが、接合界面での剥離や、周波数のシフトは確認できなかった。
実施例B1において、接合層2の材質を酸化チタンとし、接合層2の成膜にはスパッタリング法を用いた。また、中間層13Aの材質を酸化チタンとし、中間層の成膜にはスパッタリング法を用いた。その他は実施例B1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれは確認できなかった。またクラックオープニング法で接合強度を評価した所、1.8J/m2であった。
作製した接合体を用いてSAW(表面弾性波)フィルターを作製し、300℃で加熱をしたが、接合界面での剥離や、周波数のシフトは確認できなかった。
実施例B1において、接合層2の材質を五酸化ニオブとし、接合層2の成膜にはスパッタリング法を用いた。また、中間層13Aの材質を五酸化ニオブとし、中間層の成膜にはスパッタリング法を用いた。その他は実施例B1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれは確認できなかった。またクラックオープニング法で接合強度を評価した所、1.8J/m2であった。
作製した接合体を用いてSAW(表面弾性波)フィルターを作製し、300℃で加熱をしたが、接合界面での剥離や、周波数のシフトは確認できなかった。
実施例B1において、接合層2および中間層13Aの材質を窒化珪素とした。その他は実施例B1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれが発生した。またクラックオープニング法で接合強度を評価した所、0.7J/m2であった。
実施例B1において、接合層2および中間層13Aの材質を窒化アルミニウムとした。その他は実施例B1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれが発生した。またクラックオープニング法で接合強度を評価した所、0.6J/m2であった。
実施例B1において、接合層2および中間層13Aの材質を酸化珪素とした。その他は実施例B1と同様にして接合体を製造した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれが発生した。またクラックオープニング法で接合強度を評価した所、0.1J/m2であった。
実施例B1において、接合層2および中間層13Aの材質を五酸化タンタルとした。ただし、本例では、接合層の表面と中間層の表面とをプラズマ活性化法によって表面活性化した。その他は実施例B1と同様にして接合体を製造した。チャンバー内を10-1Pa台まで真空引きした後、ウェハー表面にN2プラズマ(パワー200W)を60s照射し、その後大気に出し、純水で洗浄する。更に大気中で接合させ、荷重2000Nを2分間印加した。
この結果、圧電性単結晶基板の研削および研磨工程中に接合部分の剥がれが発生した。またクラックオープニング法で接合強度を評価した所、0.3J/m2であった。
以上の結果を表2に簡潔にまとめた。
Claims (8)
- セラミックスからなる支持基板と圧電性単結晶基板とを接合する方法であって、
前記支持基板上に接合層を形成し、前記接合層がムライト、アルミナ、五酸化タンタル、酸化チタンおよび五酸化ニオブからなる群より選ばれた一種以上の材質からなる工程、
前記接合層の表面に中性化ビームを照射することで前記接合層の前記表面を活性化する工程、および
前記接合層の前記表面と前記圧電性単結晶基板とを直接接合する工程
を有することを特徴とする、接合方法。 - 前記接合層の前記表面を平坦化した後に前記活性化を行うことを特徴とする、請求項1記載の方法。
- 前記圧電性単結晶基板の表面に中性化ビームを照射することで前記表面を活性化する工程を有しており、前記接合層の前記表面と前記圧電性単結晶基板の前記表面とを直接接合することを特徴とする、請求項1または2記載の方法。
- 前記圧電性単結晶基板上に中間層を設け、前記中間層がムライト、アルミナ、五酸化タンタル、酸化チタンおよび五酸化ニオブからなる群より選ばれた一種以上の材質からなる工程、および
前記中間層の表面に中性化ビームを照射することで前記中間層の前記表面を活性化する工程
を有しており、前記接合層の前記表面と前記中間層の前記表面とを直接接合することを特徴とする、請求項1または2記載の方法。 - 前記圧電性単結晶基板を加工して粗面を形成する工程を有しており、前記粗面上に前記中間層を設けることを特徴とする、請求項4記載の方法。
- 前記中間層の前記表面を平坦化した後に前記活性化を行うことを特徴とする、請求項4または5記載の方法。
- 前記支持基板が、ムライト、コージェライトおよびサイアロンからなる群より選ばれた材質からなることを特徴とする、請求項1~6のいずれか一つの請求項に記載の方法。
- 前記圧電性単結晶基板が、ニオブ酸リチウム、タンタル酸リチウムまたはニオブ酸リチウム-タンタル酸リチウム固溶体からなることを特徴とする、請求項1~7のいずれか一つの請求項に記載の方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020187022829A KR102127260B1 (ko) | 2016-03-25 | 2017-02-22 | 접합 방법 |
DE112017001539.1T DE112017001539B4 (de) | 2016-03-25 | 2017-02-22 | Verbindungsverfahren |
CN201780017024.XA CN108886347B (zh) | 2016-03-25 | 2017-02-22 | 接合方法 |
KR1020197034785A KR20190133794A (ko) | 2016-03-25 | 2017-02-22 | 접합 방법 |
JP2018507142A JP6427713B2 (ja) | 2016-03-25 | 2017-02-22 | 接合方法 |
US16/135,577 US10720566B2 (en) | 2016-03-25 | 2018-09-19 | Bonding method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016061713 | 2016-03-25 | ||
JP2016-061713 | 2016-03-25 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/135,577 Continuation US10720566B2 (en) | 2016-03-25 | 2018-09-19 | Bonding method |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017163723A1 true WO2017163723A1 (ja) | 2017-09-28 |
Family
ID=59899977
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2017/006476 WO2017163729A1 (ja) | 2016-03-25 | 2017-02-22 | 接合体および弾性波素子 |
PCT/JP2017/006463 WO2017163723A1 (ja) | 2016-03-25 | 2017-02-22 | 接合方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2017/006476 WO2017163729A1 (ja) | 2016-03-25 | 2017-02-22 | 接合体および弾性波素子 |
Country Status (7)
Country | Link |
---|---|
US (2) | US10432169B2 (ja) |
JP (2) | JP6427714B2 (ja) |
KR (4) | KR20190134827A (ja) |
CN (2) | CN109075758B (ja) |
DE (2) | DE112017001553B4 (ja) |
TW (2) | TWI664754B (ja) |
WO (2) | WO2017163729A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018096797A1 (ja) * | 2016-11-25 | 2018-05-31 | 日本碍子株式会社 | 接合体 |
WO2019054238A1 (ja) * | 2017-09-15 | 2019-03-21 | 日本碍子株式会社 | 弾性波素子およびその製造方法 |
KR20200100133A (ko) * | 2018-01-22 | 2020-08-25 | 엔지케이 인슐레이터 엘티디 | 압전성 재료 기판과 지지 기판의 접합체 및 그 제조 방법 |
CN112088439A (zh) * | 2018-05-16 | 2020-12-15 | 日本碍子株式会社 | 压电性材料基板与支撑基板的接合体 |
WO2021002382A1 (ja) * | 2019-07-01 | 2021-01-07 | 株式会社村田製作所 | 弾性波装置 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180241374A1 (en) * | 2015-09-25 | 2018-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd | Acoustic wave resonator having antiresonant cavity |
US20180337657A1 (en) * | 2015-09-25 | 2018-11-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic wave resonator having antiresonant cavity |
DE112017001553B4 (de) * | 2016-03-25 | 2020-06-18 | Ngk Insulators, Ltd. | Verbundener Körper und Elastikwellenelement |
CN108781064B (zh) * | 2016-03-25 | 2019-10-11 | 日本碍子株式会社 | 接合方法 |
TWI780103B (zh) * | 2017-05-02 | 2022-10-11 | 日商日本碍子股份有限公司 | 彈性波元件及其製造方法 |
WO2019130852A1 (ja) * | 2017-12-28 | 2019-07-04 | 日本碍子株式会社 | 圧電性材料基板と支持基板との接合体およびその製造方法 |
JP6648338B2 (ja) * | 2017-12-28 | 2020-02-14 | 日本碍子株式会社 | 圧電性材料基板と支持基板との接合体およびその製造方法 |
FR3079666B1 (fr) * | 2018-03-30 | 2020-04-03 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface et procede de fabrication associe |
CN110858763A (zh) * | 2018-08-22 | 2020-03-03 | 天工方案公司 | 多层压电基板 |
WO2020079958A1 (ja) * | 2018-10-17 | 2020-04-23 | 日本碍子株式会社 | 接合体および弾性波素子 |
CN112840563A (zh) * | 2018-10-17 | 2021-05-25 | 日本碍子株式会社 | 接合体及弹性波元件 |
JP2020091144A (ja) * | 2018-12-04 | 2020-06-11 | 浜松ホトニクス株式会社 | シンチレータモジュール、放射線撮像装置、及びシンチレータモジュールの製造方法 |
CN109855592B (zh) * | 2019-01-08 | 2020-07-28 | 湘潭大学 | 基体结合面粗糙度确定方法及装置、复合材料加工方法 |
US11183987B2 (en) * | 2019-09-26 | 2021-11-23 | Avago Technologies International Sales Pte. Limited | Acoustic resonator device |
JP7274442B2 (ja) | 2020-04-02 | 2023-05-16 | 信越化学工業株式会社 | 複合基板およびその製造方法 |
KR20220041200A (ko) * | 2020-09-10 | 2022-03-31 | 엔지케이 인슐레이터 엘티디 | 탄성파 디바이스용 복합 기판 |
CN116325499A (zh) * | 2020-10-02 | 2023-06-23 | 株式会社村田制作所 | 弹性波装置及弹性波装置的制造方法 |
CN112320897B (zh) * | 2020-10-09 | 2022-07-22 | 新昌中国计量大学企业创新研究院有限公司 | 一种球状铁碳微电解填料及其制备方法 |
WO2022158249A1 (ja) * | 2021-01-19 | 2022-07-28 | 株式会社村田製作所 | 弾性波装置、フィルタ装置及び弾性波装置の製造方法 |
WO2022190465A1 (ja) * | 2021-03-10 | 2022-09-15 | 日本碍子株式会社 | 接合体 |
ES2936907B2 (es) | 2021-09-14 | 2023-08-11 | Quim Tecnica Ecologica S L U | Metodo y equipos para la produccion de polihidroxialcanoatos y bioestimulante radicular a partir de residuos organicos |
KR20240050493A (ko) | 2022-10-11 | 2024-04-19 | (재)한국나노기술원 | 이종 기판의 접합 구조체 및 그 제조방법 그리고 이를 이용한 탄성파 소자 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014192597A1 (ja) * | 2013-05-31 | 2014-12-04 | 日本碍子株式会社 | 複合基板用支持基板および複合基板 |
JP2015145054A (ja) * | 2014-02-04 | 2015-08-13 | 日本碍子株式会社 | 複合基板の研磨方法及び複合基板 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5814727B2 (ja) | 1974-09-25 | 1983-03-22 | 富士写真フイルム株式会社 | キヨウジセイサンカテツノ セイホウ |
JPS5814727A (ja) | 1981-07-17 | 1983-01-27 | Polyurethan Eng:Kk | 板状品の連続成形機におけるコンベア駆動方法 |
JPH027480A (ja) * | 1988-06-24 | 1990-01-11 | Nissha Printing Co Ltd | 圧電磁器の製造方法 |
JP3814763B2 (ja) | 1995-03-31 | 2006-08-30 | 東レフィルム加工株式会社 | コーティングフィルムの製造方法 |
JP3465675B2 (ja) * | 2000-09-11 | 2003-11-10 | 日本碍子株式会社 | 圧電/電歪膜型素子 |
JP3512379B2 (ja) * | 2000-09-20 | 2004-03-29 | 日本碍子株式会社 | 圧電体素子、及びその製造方法 |
US7105980B2 (en) | 2002-07-03 | 2006-09-12 | Sawtek, Inc. | Saw filter device and method employing normal temperature bonding for producing desirable filter production and performance characteristics |
JP3774782B2 (ja) | 2003-05-14 | 2006-05-17 | 富士通メディアデバイス株式会社 | 弾性表面波素子の製造方法 |
JP2005045086A (ja) * | 2003-07-24 | 2005-02-17 | Nec Tokin Corp | インジェクタ装置用積層型圧電素子 |
JP2005349714A (ja) * | 2004-06-11 | 2005-12-22 | Canon Inc | 液体吐出ヘッドの製造方法および液体吐出ヘッド |
US7538401B2 (en) * | 2005-05-03 | 2009-05-26 | Rosemount Aerospace Inc. | Transducer for use in harsh environments |
FR2896618B1 (fr) * | 2006-01-23 | 2008-05-23 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat composite |
JP5288719B2 (ja) * | 2007-03-27 | 2013-09-11 | 京セラ株式会社 | 液体吐出ヘッド用積層圧電アクチュエータおよびその製造方法ならびに液体吐出ヘッド |
JP4720808B2 (ja) | 2007-09-21 | 2011-07-13 | セイコーエプソン株式会社 | 接着シート、接合方法および接合体 |
JP4442671B2 (ja) * | 2007-09-21 | 2010-03-31 | セイコーエプソン株式会社 | 接合膜付き基材、接合方法および接合体 |
JP4348454B2 (ja) * | 2007-11-08 | 2009-10-21 | 三菱重工業株式会社 | デバイスおよびデバイス製造方法 |
JP2010187373A (ja) | 2009-01-19 | 2010-08-26 | Ngk Insulators Ltd | 複合基板及びそれを用いた弾性波デバイス |
EP2506431A4 (en) * | 2009-11-26 | 2014-02-26 | Murata Manufacturing Co | PIEZOELECTRIC DEVICE AND METHOD FOR PRODUCING THE PIEZOELECTRIC DEVICE |
JP5669443B2 (ja) * | 2010-05-31 | 2015-02-12 | キヤノン株式会社 | 振動体とその製造方法及び振動波アクチュエータ |
JP3184763U (ja) | 2010-06-15 | 2013-07-18 | 日本碍子株式会社 | 複合基板 |
CN102624352B (zh) | 2010-10-06 | 2015-12-09 | 日本碍子株式会社 | 复合基板的制造方法以及复合基板 |
JP2013214954A (ja) * | 2012-03-07 | 2013-10-17 | Taiyo Yuden Co Ltd | 共振子、周波数フィルタ、デュプレクサ、電子機器及び共振子の製造方法 |
JP5861771B2 (ja) | 2012-03-26 | 2016-02-16 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JP5833239B2 (ja) | 2012-07-12 | 2015-12-16 | 日本碍子株式会社 | 複合基板、圧電デバイス及び複合基板の製法 |
EP2736169B1 (en) | 2012-08-17 | 2016-09-14 | NGK Insulators, Ltd. | Composite substrate, elastic surface wave device, and method for producing composite substrate |
JP2014086400A (ja) | 2012-10-26 | 2014-05-12 | Mitsubishi Heavy Ind Ltd | 高速原子ビーム源およびそれを用いた常温接合装置 |
TWI516024B (zh) | 2013-03-21 | 2016-01-01 | Ngk Insulators Ltd | Composite substrate and elastic wave element for elastic wave element |
US10177734B2 (en) * | 2015-08-25 | 2019-01-08 | Avago Technologies International Sales Pte. Limited | Surface acoustic wave (SAW) resonator |
US10530327B2 (en) * | 2015-08-25 | 2020-01-07 | Avago Technologies International Sales Pte. Limited | Surface acoustic wave (SAW) resonator |
US10541667B2 (en) * | 2015-08-25 | 2020-01-21 | Avago Technologies International Sales Pte. Limited | Surface acoustic wave (SAW) resonator having trap-rich region |
WO2017068828A1 (ja) * | 2015-10-23 | 2017-04-27 | 株式会社村田製作所 | 弾性波装置 |
CN108781064B (zh) * | 2016-03-25 | 2019-10-11 | 日本碍子株式会社 | 接合方法 |
DE112017001553B4 (de) * | 2016-03-25 | 2020-06-18 | Ngk Insulators, Ltd. | Verbundener Körper und Elastikwellenelement |
KR101972728B1 (ko) * | 2017-03-31 | 2019-04-25 | 엔지케이 인슐레이터 엘티디 | 접합체 및 탄성파 소자 |
-
2017
- 2017-02-22 DE DE112017001553.7T patent/DE112017001553B4/de active Active
- 2017-02-22 KR KR1020197034939A patent/KR20190134827A/ko active Application Filing
- 2017-02-22 WO PCT/JP2017/006476 patent/WO2017163729A1/ja active Application Filing
- 2017-02-22 JP JP2018507148A patent/JP6427714B2/ja active Active
- 2017-02-22 TW TW106105858A patent/TWI664754B/zh active
- 2017-02-22 TW TW106105857A patent/TWI672839B/zh active
- 2017-02-22 JP JP2018507142A patent/JP6427713B2/ja active Active
- 2017-02-22 KR KR1020187022885A patent/KR102183134B1/ko active IP Right Grant
- 2017-02-22 WO PCT/JP2017/006463 patent/WO2017163723A1/ja active Application Filing
- 2017-02-22 KR KR1020187022829A patent/KR102127260B1/ko active IP Right Grant
- 2017-02-22 CN CN201780013563.6A patent/CN109075758B/zh active Active
- 2017-02-22 DE DE112017001539.1T patent/DE112017001539B4/de active Active
- 2017-02-22 CN CN201780017024.XA patent/CN108886347B/zh active Active
- 2017-02-22 KR KR1020197034785A patent/KR20190133794A/ko active Application Filing
-
2018
- 2018-09-19 US US16/135,655 patent/US10432169B2/en active Active
- 2018-09-19 US US16/135,577 patent/US10720566B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014192597A1 (ja) * | 2013-05-31 | 2014-12-04 | 日本碍子株式会社 | 複合基板用支持基板および複合基板 |
JP2015145054A (ja) * | 2014-02-04 | 2015-08-13 | 日本碍子株式会社 | 複合基板の研磨方法及び複合基板 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018096797A1 (ja) * | 2016-11-25 | 2018-05-31 | 日本碍子株式会社 | 接合体 |
JPWO2018096797A1 (ja) * | 2016-11-25 | 2019-10-17 | 日本碍子株式会社 | 接合体 |
US11456720B2 (en) | 2016-11-25 | 2022-09-27 | Ngk Insulators, Ltd. | Bonded body with piezoelectric monocrystalline substrate and supporting substrate |
WO2019054238A1 (ja) * | 2017-09-15 | 2019-03-21 | 日本碍子株式会社 | 弾性波素子およびその製造方法 |
US11632093B2 (en) | 2017-09-15 | 2023-04-18 | Ngk Insulators, Ltd. | Acoustic wave devices and a method of producing the same |
KR20200100133A (ko) * | 2018-01-22 | 2020-08-25 | 엔지케이 인슐레이터 엘티디 | 압전성 재료 기판과 지지 기판의 접합체 및 그 제조 방법 |
KR102434081B1 (ko) * | 2018-01-22 | 2022-08-18 | 엔지케이 인슐레이터 엘티디 | 압전성 재료 기판과 지지 기판의 접합체 및 그 제조 방법 |
US11871671B2 (en) | 2018-01-22 | 2024-01-09 | Ngk Insulators, Ltd. | Assembly of piezoelectric material substrate and supporting substrate, and method for manufacturing same |
CN112088439A (zh) * | 2018-05-16 | 2020-12-15 | 日本碍子株式会社 | 压电性材料基板与支撑基板的接合体 |
US11082025B2 (en) | 2018-05-16 | 2021-08-03 | Ngk Insulators, Ltd. | Joined body of piezoelectric material substrate and support substrate |
CN112088439B (zh) * | 2018-05-16 | 2022-04-22 | 日本碍子株式会社 | 压电性材料基板与支撑基板的接合体 |
WO2021002382A1 (ja) * | 2019-07-01 | 2021-01-07 | 株式会社村田製作所 | 弾性波装置 |
Also Published As
Publication number | Publication date |
---|---|
CN108886347B (zh) | 2019-10-11 |
JP6427713B2 (ja) | 2018-11-21 |
CN109075758A (zh) | 2018-12-21 |
KR20180102615A (ko) | 2018-09-17 |
JPWO2017163723A1 (ja) | 2018-09-13 |
DE112017001553B4 (de) | 2020-06-18 |
KR102127260B1 (ko) | 2020-06-26 |
TW201743481A (zh) | 2017-12-16 |
TWI672839B (zh) | 2019-09-21 |
US10432169B2 (en) | 2019-10-01 |
US20190036509A1 (en) | 2019-01-31 |
DE112017001553T5 (de) | 2018-12-20 |
KR20190133794A (ko) | 2019-12-03 |
US10720566B2 (en) | 2020-07-21 |
CN108886347A (zh) | 2018-11-23 |
WO2017163729A1 (ja) | 2017-09-28 |
KR102183134B1 (ko) | 2020-11-25 |
KR20190134827A (ko) | 2019-12-04 |
CN109075758B (zh) | 2019-12-06 |
US20190036008A1 (en) | 2019-01-31 |
TWI664754B (zh) | 2019-07-01 |
TW201742277A (zh) | 2017-12-01 |
KR20180101482A (ko) | 2018-09-12 |
JPWO2017163729A1 (ja) | 2018-09-13 |
JP6427714B2 (ja) | 2018-11-21 |
DE112017001539B4 (de) | 2020-06-18 |
DE112017001539T5 (de) | 2018-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6427713B2 (ja) | 接合方法 | |
JP6427712B2 (ja) | 接合方法 | |
JP6375471B1 (ja) | 接合体および弾性波素子 | |
CN110574290B (zh) | 弹性波元件及其制造方法 | |
US11632093B2 (en) | Acoustic wave devices and a method of producing the same | |
WO2018096797A1 (ja) | 接合体 | |
JP6605184B1 (ja) | 接合体および弾性波素子 | |
JP6393015B1 (ja) | 弾性波素子およびその製造方法 | |
JP6612002B1 (ja) | 接合体および弾性波素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2018507142 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20187022829 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020187022829 Country of ref document: KR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17769769 Country of ref document: EP Kind code of ref document: A1 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 17769769 Country of ref document: EP Kind code of ref document: A1 |